Method for preparing copper-zinc-tin-sulfur thin-film solar cell through interfacial modification

A technology of solar cells and copper-zinc-tin-sulfur, applied in the field of solar energy, can solve the problems of rough and uneven film formation, poor crystallinity, poor adhesion of Mo back contact layer, etc. Strong effect

Inactive Publication Date: 2014-04-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to: aim at the above-mentioned technology based on nano-ink-based chemical wet method to prepare this type of battery, which has copper-zinc-tin-sulfur nanocrystals with

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  • Method for preparing copper-zinc-tin-sulfur thin-film solar cell through interfacial modification
  • Method for preparing copper-zinc-tin-sulfur thin-film solar cell through interfacial modification
  • Method for preparing copper-zinc-tin-sulfur thin-film solar cell through interfacial modification

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Embodiment 1

[0024] 1. The preparation of the Mo back contact layer is mainly divided into two steps. First, the vacuum degree of the back is higher than 10 -4 Pa, under the condition of argon working pressure of 1-3Pa, DC magnetron sputtering for 2-6 minutes under the condition of 130W power, a Mo film with strong adhesion to the glass substrate is obtained; Under the condition of DC magnetron sputtering for 20-40 minutes under the power condition of 130W, a Mo film with a small resistivity is obtained, and the Mo film with a double-layer structure forms the back electrode of the battery.

[0025] 2. Preparation of Cu on Mo film by electrochemical plating 2 S prefabricated layer, the specific steps are as follows: first prepare the electrolyte solution with the following formula: sodium citrate (0.5mol / L), CuSO 4 (0.286mol / L),Na 2 S 2 o 3 , adding an appropriate amount of HCl to adjust the pH value of the electroplating solution to 2.5; then deposit Cu on the prepared Mo film at a pot...

Embodiment 2

[0032] 1. The preparation of the Mo back contact layer is mainly divided into two steps. First, the vacuum degree of the back is higher than 10 -4 Pa, under the condition of argon working pressure of 1-3Pa, DC magnetron sputtering for 2-6 minutes under the condition of 130W power, a Mo film with strong adhesion to the glass substrate is obtained; Under the condition of DC magnetron sputtering for 20-40 minutes under the power condition of 130W, a Mo film with a small resistivity is obtained, and the Mo film with a double-layer structure forms the back electrode of the battery.

[0033] 2. Preparation of Cu on Mo film by DC magnetron sputtering 2 Se prefabricated layer, using DC magnetron sputtering system, using copper single target as raw material, and the vacuum degree of the back is higher than 10 -4 Pa, the working pressure is 0.3-1Pa, and the sputtering power is 30-100W, DC magnetron sputtering for 20-30 minutes, physical vapor deposition of copper metal precursor on the...

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Abstract

The invention relates to the technical field of solar cells, and discloses a method for preparing a copper-zinc-tin-sulfur thin-film solar cell through interfacial modification. The copper-zinc-tin-sulfur thin-film solar cell is of a multi-layer film structure, and comprises a substrate, an Mo back contact layer, a copper-zinc-tin-sulfur light absorption thin-film layer, a CdS buffer layer, a ZnO window layer, an MgF2 anti-reflecting film and an Ni-Al metal gate electrode. According to the method, through interfacial modification, a Cu2S1-xSex pre-fabricating layer is prepared on the Mo back contact layer, wherein x is greater than or equal to 0 and smaller than or equal to 1; copper-zinc-tin-sulfur nano-ink is used for film forming on the pre-fabricating layer, so that diffusion confusion and chemical reaction of the Cu2S1-xSex pre-fabricating layer and a copper-zinc-tin-sulfur nanocrystalline thin-film are realized through high-temperature annealing technology; on the basis that other impurity elements are not introduced, the disadvantage that copper-zinc-tin-sulfur nanocrystalline is low in film-forming adhesive force is effectively overcome, and a copper-zinc-tin-sulfur light absorption thin-film layer with good crystallinity, uniform appearance, single phase and high adhesive force is obtained, thus the copper-zinc-tin-sulfur thin-film solar cell with high efficiency is prepared.

Description

technical field [0001] The invention relates to the technical field of solar energy, in particular to a preparation process of copper-zinc-tin-sulfur thin-film solar cells. Background technique [0002] Copper zinc tin sulfur (Cu 2 ZnSnS 4 , referred to as CZTS) for I 2 –II–IV–VI 4 It is a quaternary kesterite semiconductor material, and its constituent elements copper, zinc, tin, and sulfur are non-toxic, and their content is relatively high in the earth. Copper-zinc-tin-sulfur is a direct bandgap semiconductor, with an optical bandgap Eg of 1.4-1.5eV, which is very close to the ideal bandgap of 1.4eV for photovoltaic cells, and has a large light absorption coefficient greater than 10 4 cm -1 , so CZTS is an ideal thin-film solar cell absorber material. IBM has constructed a copper-zinc-tin-sulfur-selenide (CZTSSe) thin-film solar cell by depositing an absorbing layer with a hydrazine solution, and its conversion efficiency is as high as 12.6%, which is currently the ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/0326H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 张庶彭晓丽向勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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