217 results about "Chemical bath deposition" patented technology

A method for fabricating a thin film field effect transistor is described in this invention. The active layer of the thin film transistor (TFT) is formed by a low cost chemical bath deposition method. The fabrication procedure includes deposition of a metal layer on an insulating substrate, patterning of the metal layer to form a metal gate, formation of the di-electric layer, deposition of the active layer and formation of source and drain contacts.

The present invention relates to a three-dimensional graphene composite, a preparation method for the same, and a supercapacitor including the same, and more particularly to a three-dimensional graphene composite including at least one electrode material nanoparticle selected from a transition metal hydroxide, a transition metal oxide and a conducting polymer as adsorbed onto the surface of a three-dimensional graphene foam, a preparation method for the three-dimensional graphene composite, and a supercapacitor including the three-dimensional graphene composite.

The present invention can be used to provide a supercapacitor electrode with greatly enhanced electrostatic capacity and high energy density, by using a foaming resin structure made of a thin graphene frame to achieve lightweightness and also effectively depositing a nanostructure by a relatively simple and economic method such as the chemical bath deposition method or the electrodeposition method, based on an electron collector with high conductivity.

Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition.

A chemical bath deposition method and a system are presented to prepare different thin films on continuous flexible substrates in roll-to-roll processes. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition system deposit thin films onto vertically travelling continuous flexible workpieces delivered by a roll-to-roll system. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the flexible substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

An industrial production line is presented to fabricate CIGS thin film solar cells on continuous flexible substrates in roll-to-roll processes. It provides an entire solution including procedures and related equipments from starting blank substrates to completed solar cells that can be used to fabricate solar modules. This production line contains some core apparatuses, such as a modular electroplating system to deposit CIGS materials, a modular thermal reactor to annealing the CIGS films, and a chemical bath deposition reactor to coat CdS buffer layer, are recently invented by the present inventor. The present production line can be conveniently used to prepare the CIGS thin film solar cells with high efficiency but low cost.

A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

The invention discloses a p-CuO-n-ZnO solar cell. An indium-tin-oxide (ITO) substrate, a vertically oriented ZnO nanorod array, a CuO film and an Au electrode are superposed in sequence from the bottom layer to the top layer, wherein the vertically oriented ZnO nanorod array is used as an n-type semiconductor absorption layer, and the CuO film is used as a p-type semiconductor light absorption layer and a hole transporting layer. The preparation method of the p-CuO-n-ZnO solar cell comprises the following steps of: preparing a ZnO seed crystal layer on ITO by utilizing a sol-gel method; preparing the vertically oriented ZnO nanorod array by utilizing a chemical bath deposition method; preparing the CuO film on the ZnO nanorod array by utilizing an in-situ growth method; and sputtering the Au electrode by using an ion beam sputtering system. The invention has the advantages that the equipment adopted by the preparation method is simple, and the cost is low; as CuO is adopted to serve as the light absorption layer and the hole transporting layer, compared with organic materials, the CuO has higher electromigration capacity; and by combining with the electrical conduction characteristic of inorganic ZnO with high light absorption and low thermal emittance of the CuO, the photoelectric conversion efficiency of the solar cell can be effectively increased.

The invention provides a preparation process of an Nd-Fe-B permanent magnet and a magnet prepared by using the preparation process, belonging to the field of a magnetic functional material and a preparation technology. The preparation process comprises the following specific steps of: growing an RbX3 thin film on a surface of the magnet by using a chemical bath deposition method; secondly, diffusing elements in the RbX3 thin film, which is plated on the surface of the magnet, to the inside of the magnet through primary heat treatment; and uniformly distributing an element Rb at a crystal boundary position through secondary heat treatment, and removing an unbalanced structure and an internal stress, which are brought by the primary heat treatment in the magnet, wherein a chemical formula of the prepared magnet is RaRbXFeMB. The preparation process provided by the invention has the advantages that the neodymium-iron-boron magnet is prepared by using the chemical bath method, so that the production efficiency can be improved, and the use amount of heavy rare earth in the preparation process of the magnet is reduced. Meanwhile, a high coercive force is obtained under the premise of not reducing magnet remanence and magnetic energy product.

The invention belongs to the technical field of transition-metal chalcogenide-carbon material and specifically relates to a nickel selenide/hollow carbon-fibre composite and a preparation method thereof. The preparation process comprises the following steps: preparing hollow carbon fiber by the use of high-temperature carbonized cotton, then growing vertical nickel hydroxide nanosheet in situ on the hollow carbon fiber by a chemical bath deposition method, and finally selenizing the obtained nickel hydroxide/hollow carbon fiber composite so as to prepare the nickel selenide/hollow carbon-fibre composite. The prepared carbon fiber is a hollow structure and has large specific surface area and good conductivity. The preparation process is simple, and cost is low. The morphology of the finally prepared nickel selenide/hollow carbon-fibre composite is controllable. Nickel selenide uniformly grows on the internal and external tube walls of the hollow carbon nanofiber. By full utilization of the unique hollow tube structure and high specific surface area of the hollow carbon fiber, the product can be used as an ideal high-performance electrocatalysis material as well as an electrode material of new energy devices such as a sodium-ion battery and a supercapacitor, etc.

The invention discloses a method for preparing a copper-indium-gallium-selenide (CIGS) solar photovoltaic cell. The method for preparing the photovoltaic cell comprises the following steps of: cleaning a glass substrate, sputtering a molybdenum metal, sputtering a copper-indium-gallium alloy, performing selenylation (vulcanization), depositing zinc sulfide in a chemical bath, sputtering zinc oxide and sputtering aluminum-doped zinc oxide. The method is high in utilization rate of raw materials, uniform in components of cell compounds, high in photoelectric conversion efficiency and good in repeatability.

The invention relates to a method for preparing a Cu2ZnSnS4 nanocrystalline thin-film solar cell, which comprises the following steps of: performing chemical bath deposition on a ZnS film to form a buffer layer by taking molybdenum-plated metal aluminum as a flexible substrate and a film prepared from hydrophilic Cu2ZnSnS4 nanocrystalline as an absorption layer; and assembling the solar cell by performing magnetron sputtering on intrinsic ZnO, ITO and Ni-Al electrodes. By the method, vacuum equipment is not required, production cost is reduced, and convenience is brought to mass production; raw materials for preparing the Cu2ZnSnS4 solar cell are environment-friendly materials and have low prices, so that the cost of the solar cell is reduced to the great extent; and the method has a good application prospect.

The invention relates to a method for preparing a super-hydrophilic and hydrophobic composite nano array interface material, which comprises the following steps: 1)taking a copper sheet as a base material, preparing a zinc oxide nano conical fascia by a chemical bath sedimentation method in hot bath; 2)using seventeen perfluorinated silane for modifying the oxidative nano conical fascia at 120 DEG C by a vapour deposition method; 3)preparing a polyvinyl alcohol low-solid content aqueous solution; 4)establishing an ultrasonic atomization and condensation platform, atomizing the polyvinyl alcohol aqueous solution with concentration being 0.1-0.2%, reducing the temperature of the surface of the copper-based zinc oxide nano conical fascia to 1-5 DEG C through the condensation platform, uniformly condensing the surface of the super-hydrophobic zinc oxide nano conical fascia by the polyvinyl alcohol dispersion liquid dispersed in air, performing spray deposition under observation of a high power CCD imaging system; and 5)rapidly transferring to a constant temperature heating stage, solidifying at constant temperature, after solvent moisture is completely volatilized, solidifying polyvinyl alcohol and absorbing on the surface of the zinc oxide nano conical fascia to form a hydrophilic and hydrophobic composite nano array interface. The method has the advantages of simple process and low cost, and the material has high anti-condensation frosting performance.

The invention provides a method for preparing lead sulfide thin films with (200) preferred orientation, which belongs to the technical field of electronic materials and relates to semiconductor optoelectronic thin films and infrared photoelectric detectors, in particular to a method for preparing the lead sulfide thin films with (200) preferred orientation of near-infrared photoelectric detectors by using chemical bath deposition. In the invention, the bicontinuous cubic phase lead sulfide thin films with (200) preferred orientation are obtained by using the chemical bath deposition, designing a preparation flow of solution of a reaction precursor, strictly controlling the initial nucleating process of the thin films and performing a subsequent high-temperature sensitizing process. The lead sulfide thin films prepared by the method have high uniformity and a light sensitive characteristic and can be used in the near-infrared photoelectric detectors. The invention has the advantages that: the whole preparation technical process is simple and easy to control; and the preparation device is simple and low in cost.

Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn_1−xMg_xO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn_1−xMg_xO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn_1−xMg_xO window layer.

A chemical bath deposition method of depositing on a semiconductor substrate a layer of zinc sulfide by dipping the semiconductor substrate into an aqueous solution of zinc sulfate and thiourea and ammonia.

The invention provides a method for preparing a bifunctional Co9S8 and nitrogen doped carbon composite array electrode. The method comprises the steps of preparing an alkali type cobalt salt needle-shaped array in-situ electrode by a chemical bath deposition method, then, growing polydopamine on the surface of an alkali type cobalt salt array by using dopamine, then, adding thiourea in a protective atmosphere, and carrying out a vulcanization reaction by a CVD method, wherein during the reaction, the polydopamine is converted into a nitrogen doped carbon material, and an alkali type cobalt salt is converted into Co9S8 in a thiourea atmosphere. The product obtained by the method provided by the invention has a variety of high-electrocatalytic-activity loci, including nitrogen doped active sites in the carbon material and other crystal lattice defects resulting from the nitrogen doped active sites, thereby having excellent electrocatalytic oxygen reduction reaction (ORR) performance; theCo9S8 has a relatively good electrocatalytic oxygen evolution reaction (OER) performance; and furthermore, a heterojunction formed by the Co9S8 and the carbon material also has excellent electrocatalytic OER and OER performance.

A chemical bath deposition method and a system are presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition system deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

In a process for producing a photoelectric conversion device comprising a bottom electrode layer, a photoelectric conversion semiconductor layer, a buffer layer, and a transparent conductive layer, which are stacked in this order on a substrate, all film forming stages ranging from a stage of forming the buffer layer to a stage of forming the transparent conductive layer are performed with a liquid phase technique. The buffer layer is formed with a chemical bath deposition technique, and the transparent conductive layer is formed with an electrolytic deposition technique.

The invention discloses a hot water non-stick surface structure and a preparation method thereof. The super-hydrophobic interface structure comprises a nano cone array structure formed on the surface of a substrate, wherein the nano array structure comprises a plurality of nano protrusions arranged in an array manner; at least the top of the nano protrusion is provided with a conical structure; the distance between two adjacent nano protrusions is 50-500nm; the top diameter of the nano protrusions is 1-200nm; and the surface of the nano array structure is modified with low surface energy substances. The preparation method is mainly implemented by virtue of a chemical bath deposition method. The super-hydrophobic surface structure disclosed by the invention has good hot water non-stick properties, non-stick impact and instantaneous rebound of hot water drops or hot water flow can be realized, the preparation process is easy to operate and control, any expensive equipment is not needed, and the super-hydrophobic surface structure is low in consumption, environment-friendly, high in reproducibility and short in period, can be prepared in large area and has excellent industrial application prospects.

The invention discloses an In-doped zinc sulfide thin film and a preparation method and application thereof. A chemical bath deposition method is adopted to prepare the thin film. The invention belongs to non-vacuum chemical vapor deposition. The method is easy in control on ingredients of the thin film, is low in preparation cost and is suitable for large-scale production. According to the invention, an impurity doping method is utilized to reduce resistivity of the zinc sulfide thin film; tests show that when 2at. percent of In is doped in ZnS, the thin film comprises a small quantity of impurity phases and has high optical transmittance (the optical transmittance in a visible region is about 85 percent) and low resistivity (26*105ohmcm). The prepared ZnS thin film is suitable to be used as a buffer layer material of a solar cell.

The present invention relates to a nickel hydroxide/graphene roll-carbon nano-tube composite carbon aerogel, a preparation thereof and an application thereof. The composite carbon aerogel is composed of a composite carbon aerogel skeleton and a nickel hydroxide nano sheet formed on the surface of the composite carbon aerogel skeleton through the in-situ growth process. The preparation of the composite carbon aerogel comprises the steps of adding a graphene roll-carbon nano-tube composite carbon aerogel into a nickel nitrate solution, subjecting the above materials to deposition reaction in a chemical bath, washing and drying to obtain the composite carbon aerogel. According to the technical scheme of the invention, in the simple chemical and deposition means, the nickel hydroxide having pseudo-capacitive properties is compounded with the graphene roll-carbon nano-tube aerogel having double-electrode-layer capacitance properties, so that the advantages of the nickel hydroxide and the graphene roll-carbon nano-tube aerogel are given full play to. Therefore, the obtained material is excellent in electrochemical performance and high in capacitive character.

The invention discloses a method for preparing a cadmium sulfide film by using a chemical bath deposition method. The method comprises the steps: cleaning a substrate; mounting the substrate, forming a reactor by the substrate and a fixture; preparing a solution, mixing cadmium salt, ammonia water, buffering agents, thiourea and deionized water according to a certain ratio to form a reaction solution, and then adding the solution into the reactor; reacting and depositing the reaction solution, placing the reactor with the reaction solution in a constant temperature bath container, heating the reaction solution to 50 DEG C to 90 DEG C, exerting 20 to 50 KHz ultrasonic waves to assist the depositing simultaneously, or adding a water pump so that the reaction solution circulates constantly in the reactor through a water inlet and a water outlet of the fixture and the total reaction time is about 5 minutes to 60 minutes; and subjecting the reaction solution to further treatment, taking down the substrate deposited with the cadmium sulfide film, and cleaning, drying or stoving the substrate. According to the method for preparing the cadmium sulfide film by the chemical bath deposition method, reaction materials are saved, only single side coating happens on the substrate, the attractiveness is improved, the deposited cadmium sulfide film is continuous, uniform and compact, and the film-forming quality is improved.