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In-doped zinc sulfide thin film and preparation method and application thereof

A technology of thin film and doping amount, which can be used in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc. The effect of reducing the resistivity

Active Publication Date: 2014-01-22
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, due to the high resistivity of the intrinsic ZnS film (about 10 7 -10 8 Ωcm), which is not conducive to improving the conversion efficiency of thin-film solar cells

Method used

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  • In-doped zinc sulfide thin film and preparation method and application thereof
  • In-doped zinc sulfide thin film and preparation method and application thereof
  • In-doped zinc sulfide thin film and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Get 15ml of zinc acetate with a concentration of 0.4mol / L, and 15ml of sodium citrate with a concentration of 0.1mol / L, according to the doping amount of 0 at.%, 0.5 at.%, 1 at.%, 2 at.%, 3 at.%, 4 at.% indium sulfate as doping source. Add 87.5ml of deionized water and mix well. Acetic acid was added dropwise to the solution to adjust the pH of the solution to 4.0.

[0018] Place the solution in a water bath for heating. After the temperature of the solution reached 85° C., 15 ml of thioacetamide with a concentration of 0.4 mol / L was added to the solution. Starting from the time of adding thioacetamide, react at a water bath temperature of 85° C. for 1.5 h.

[0019] The deposited In-doped ZnS film was deposited on N 2 Annealing treatment was carried out in the atmosphere, the temperature of annealing treatment was 350°C, the time of annealing treatment was 1.5 h, and cooled to room temperature.

[0020] Phase analysis of In-doped ZnS thin films.

[0021] figure 1...

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Abstract

The invention discloses an In-doped zinc sulfide thin film and a preparation method and application thereof. A chemical bath deposition method is adopted to prepare the thin film. The invention belongs to non-vacuum chemical vapor deposition. The method is easy in control on ingredients of the thin film, is low in preparation cost and is suitable for large-scale production. According to the invention, an impurity doping method is utilized to reduce resistivity of the zinc sulfide thin film; tests show that when 2at. percent of In is doped in ZnS, the thin film comprises a small quantity of impurity phases and has high optical transmittance (the optical transmittance in a visible region is about 85 percent) and low resistivity (26*105ohmcm). The prepared ZnS thin film is suitable to be used as a buffer layer material of a solar cell.

Description

technical field [0001] The invention belongs to the field of material preparation, and in particular relates to a zinc sulfide film doped with a buffer layer material suitable for solar cells and a preparation method thereof. Background technique [0002] In the typical structure of thin film solar cells, a buffer layer is often introduced to improve the conversion efficiency of solar cells. CdS and CdSe are the most widely used buffer layer materials in thin film solar cells. However, due to the toxicity of Cd, it is more harmful to the environment, and it is difficult to recycle the battery after treatment. At the same time, there are also problems such as the narrow energy band gap and the fact that sunlight below 516 nm is not allowed to pass through it and enter the absorbing layer, which makes the photovoltaic module products containing Cd a big market problem. In recent years, the research on buffer layer materials mainly focuses on the preparation of cadmium-free b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0296H01L31/0352
CPCH01L21/02474H01L21/02499H01L21/02628H01L31/1828Y02E10/543Y02P70/50
Inventor 程树英廖洁周海芳赖云锋俞金玲龙博贾宏杰张红
Owner FUZHOU UNIV
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