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Method for preparing cadmium sulfide film by using chemical bath deposition method

A chemical water bath and cadmium sulfide technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of low heating efficiency, affecting the uniformity and compactness of the film, and affecting the appearance, so as to improve the uniformity and compactness, improve the quality of film formation, and improve the effect of product quality

Active Publication Date: 2012-11-07
BEIJING SIFANG JIBAO AUTOMATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the substrate is completely immersed in the reaction solution, more reaction solution is often required, the use efficiency of raw materials is low, and the heating efficiency is not high; in addition, a film will also grow on the back of the substrate that does not need to be deposited, which affects the appearance. It may even have unforeseen effects on the performance of thin-film solar cells
The surface of the cadmium sulfide film prepared by the conventional chemical water bath method is easy to adsorb and contain large-sized particles, which affects the uniformity and compactness of the film.
When the large particles are detached, it will also cause pores, which will affect the quality of film formation and battery performance

Method used

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  • Method for preparing cadmium sulfide film by using chemical bath deposition method
  • Method for preparing cadmium sulfide film by using chemical bath deposition method
  • Method for preparing cadmium sulfide film by using chemical bath deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Cleaning the substrate: clean the substrate, then blow dry or dry it;

[0021] (2) Install the substrate: place the substrate in a special fixture and clamp it, and use a sealing ring and a rubber ring between the substrate and the fixture to keep the substrate evenly stressed and well sealed. constitute a reaction vessel;

[0022] (3) Configuration solution: Mix cadmium sulfate, ammonia water, ammonium chloride, thiourea, and deionized water in a certain proportion to make a reaction solution, so that Cd in the reaction solution is 2+ Concentration is 2mM, ammonia concentration is 0.3M, NH 4 + The concentration is 30 mM, and the concentration of thiourea is 40 mM, and then mixed into the reaction vessel;

[0023] (4) Reaction deposition: place the reaction vessel containing the reaction solution in a constant temperature water bath container, heat the reaction solution to 80°C, and the reaction time is 30min.

[0024] (5) Subsequent treatment: remove the substr...

Embodiment 2

[0027] (1) Cleaning the substrate: the same as in Example 1.

[0028] (2) Mounting substrate: the same as in Example 1.

[0029] (3) Configuration solution: Mix cadmium sulfate, ammonia water, ammonium sulfate, thiourea, and deionized water in a certain proportion to make a reaction solution, so that Cd in the reaction solution is 2+ Concentration is 4mM, ammonia concentration is 0.5M, NH 4 + The concentration was 50 mM, and the concentration of thiourea was 80 mM, and then added to the reaction vessel.

[0030] (4) Reaction deposition: place the reaction container containing the reaction solution in a constant temperature water bath container, heat the reaction solution to 70°C, and apply 20-50KHz ultrasonic wave to assist deposition during the reaction process, and the reaction time is 15min.

[0031] (5) Subsequent processing: the same as in Example 1.

Embodiment 3

[0033] (1) Cleaning the substrate: the same as in Example 1.

[0034] (2) Mounting substrate: the same as in Example 1.

[0035] (3) Configuration solution: Mix cadmium chloride, ammonia water, ammonium chloride, thiourea, and deionized water in a certain proportion to make a reaction solution, so that Cd in the reaction solution 2+ Concentration is 1.5mM, ammonia concentration is 0.8M, NH 4 + The concentration was 80 mM, and the concentration of thiourea was 20 mM, and then added to the reaction vessel.

[0036] (4) Reaction deposition: place the reaction vessel containing the reaction solution in a constant temperature water bath container, heat the reaction solution to 60°C, and apply 20-50KHz ultrasonic waves to assist deposition during the reaction process, and at the same time add a water pump to connect the water injection port and the fixture of the fixture. The water outlet makes the reaction solution circulate continuously in the reaction vessel to assist depositi...

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Abstract

The invention discloses a method for preparing a cadmium sulfide film by using a chemical bath deposition method. The method comprises the steps: cleaning a substrate; mounting the substrate, forming a reactor by the substrate and a fixture; preparing a solution, mixing cadmium salt, ammonia water, buffering agents, thiourea and deionized water according to a certain ratio to form a reaction solution, and then adding the solution into the reactor; reacting and depositing the reaction solution, placing the reactor with the reaction solution in a constant temperature bath container, heating the reaction solution to 50 DEG C to 90 DEG C, exerting 20 to 50 KHz ultrasonic waves to assist the depositing simultaneously, or adding a water pump so that the reaction solution circulates constantly in the reactor through a water inlet and a water outlet of the fixture and the total reaction time is about 5 minutes to 60 minutes; and subjecting the reaction solution to further treatment, taking down the substrate deposited with the cadmium sulfide film, and cleaning, drying or stoving the substrate. According to the method for preparing the cadmium sulfide film by the chemical bath deposition method, reaction materials are saved, only single side coating happens on the substrate, the attractiveness is improved, the deposited cadmium sulfide film is continuous, uniform and compact, and the film-forming quality is improved.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cell preparation, and in particular relates to a deposition technology for preparing a cadmium sulfide thin film by a chemical water bath method. Background technique [0002] Solar energy is the most promising renewable energy source, which is inexhaustible and inexhaustible. In recent years, solar cell technology has developed rapidly, among which CIGS and CdTe thin-film solar cells have a very broad development prospect. As the window layer, the cadmium sulfide film and the absorber film together form a p-n junction, which plays an important role in improving the performance of thin-film solar cells. There are many preparation methods for cadmium sulfide thin films, such as physical vapor deposition, spray pyrolysis, electrochemical deposition, chemical water bath, magnetron sputtering, near-space sublimation, etc. Among them, the chemical water bath method is currently one of the mos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/14C30B29/50
Inventor 张宁张涛张至树余新平刘沅东
Owner BEIJING SIFANG JIBAO AUTOMATION
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