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Method for preparing copper-indium-gallium-selenide (CIGS) solar photovoltaic cell

A photovoltaic cell and solar energy technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problems of low photoelectric conversion efficiency of batteries, large consumption of raw materials, poor repeatability, etc., and achieve high photoelectric conversion efficiency and uniform composition. , good repeatability

Inactive Publication Date: 2012-03-21
陈群
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, the existing preparation method consumes a lot of raw materials and the production cost is high; on the other hand, the photoelectric conversion efficiency of the battery is low and the repeatability is poor; moreover, the toxic cadmium compound is used in the battery preparation process, which requires special treatment

Method used

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  • Method for preparing copper-indium-gallium-selenide (CIGS) solar photovoltaic cell
  • Method for preparing copper-indium-gallium-selenide (CIGS) solar photovoltaic cell

Examples

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Embodiment 1

[0023] Embodiment 1: prepare CIGS solar photovoltaic cell according to the following steps:

[0024] (1) Clean the glass substrate: soak the glass substrate in 5% potassium hydroxide (KOH) aqueous solution for 60 o C for 15 minutes, then rinse with water and dry with air;

[0025] (2) Sputtering molybdenum (Mo) metal: In the magnetron sputtering equipment, with argon (Ar) as the gas source and molybdenum metal as the target source, under the vacuum degree of 0.5 Pa, the glass in step 1 A layer of 0.5 micron thick molybdenum metal film is sputtered on the substrate as the back electrode;

[0026] (3) Copper (Cu) indium (In) gallium (Ga) alloy sputtering: In the magnetron sputtering equipment, argon gas is used as the gas source, copper gallium alloy (Cu / Ga=4) and indium are used as the target source, Under the vacuum of 0.5Pa, the copper indium gallium alloy with a thickness of 1.0 micron is continuously sputtered on the molybdenum metal coating in step 2 as the absorber laye...

Embodiment 2

[0031] Embodiment 2: prepare CIGS solar photovoltaic cell according to the following steps:

[0032] (1) Clean the glass substrate: soak the glass substrate in 5% potassium hydroxide (KOH) aqueous solution for 60 o Soak under C for 15 minutes, then rinse with water and blow dry with nitrogen;

[0033] (2) Sputtering molybdenum (Mo) metal: In the magnetron sputtering equipment, argon (Ar) is used as the gas source and molybdenum metal is used as the target source. A layer of 1 micron thick molybdenum metal film is sputtered on the top as the back electrode;

[0034] (3) Copper (Cu) indium (In) gallium (Ga) alloy sputtering: In the magnetron sputtering equipment, argon gas is used as the gas source, copper gallium alloy (Cu / Ga=4) and indium are used as the target source, Under the vacuum degree of 1Pa, continue sputtering a layer of copper indium gallium alloy with a thickness of 1.5 microns on the molybdenum metal coating in step 2 as the precursor of the absorber layer. The ...

Embodiment 3

[0039] Embodiment 3: prepare CIGS solar photovoltaic cell according to the following steps:

[0040] (1) Clean the glass substrate: soak the glass substrate in 5% potassium hydroxide (KOH) aqueous solution for 60 o C for 15 minutes, then rinse with water and dry with air;

[0041] (2) Sputtering molybdenum (Mo) metal: In the magnetron sputtering equipment, argon (Ar) is used as the gas source, molybdenum metal is used as the target source, and the glass substrate in step 1 is A layer of 1.5 micron thick molybdenum metal film is sputtered on the top as the back electrode;

[0042] (3) Copper (Cu) indium (In) gallium (Ga) alloy sputtering: In the magnetron sputtering equipment, argon gas is used as the gas source, copper gallium alloy (Cu / Ga=4) and indium as the target source, Under a vacuum degree of 2 Pa, continue sputtering a layer of copper indium gallium alloy with a thickness of 2.0 microns on the molybdenum metal coating in step 2 as the precursor of the absorber layer....

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Abstract

The invention discloses a method for preparing a copper-indium-gallium-selenide (CIGS) solar photovoltaic cell. The method for preparing the photovoltaic cell comprises the following steps of: cleaning a glass substrate, sputtering a molybdenum metal, sputtering a copper-indium-gallium alloy, performing selenylation (vulcanization), depositing zinc sulfide in a chemical bath, sputtering zinc oxide and sputtering aluminum-doped zinc oxide. The method is high in utilization rate of raw materials, uniform in components of cell compounds, high in photoelectric conversion efficiency and good in repeatability.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic cells, in particular to a method for preparing a CIGS (copper indium gallium selenide) solar photovoltaic cell. Background technique [0002] At present, the country vigorously advocates the development of green and renewable energy. CIGS-based solar photovoltaic cells are one of them, which have many advantages: the highest photoelectric conversion efficiency of solar photovoltaic thin film cells; excellent stability and normal working life; easy low-cost large-scale commercial chemical production. The photoelectric conversion efficiency of CIGS cells is closely related to the preparation method of the cells. On the one hand, the existing preparation method consumes a lot of raw materials and the production cost is high; on the other hand, the photoelectric conversion efficiency of the battery is low and the repeatability is poor; moreover, toxic cadmium compounds are used in the batt...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈群
Owner 陈群
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