Method for depositing indium sulfide thin film by chemical bath

A chemical bath deposition, indium sulfide technology, applied in chemical instruments and methods, inorganic chemistry, liquid chemical plating and other directions, can solve the problems of substrate selection limitation, destroying the original morphology of the film, affecting the light transmission characteristics of the film, etc. Achieve the effect of shortening film formation time, avoiding homogeneous nucleation and precipitation, and saving costs

Inactive Publication Date: 2009-12-23
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the gas phase preparation methods have high requirements on deposition conditions, such as vacuum and high temperature, which will inevitably destroy the original morphology of the film, and it is difficult to accurately control the composition of the prepared film to strictly conform to the stoichiometry of its molecular formula. Ratio, which will affect the light transmission characteristics of the film and thus affect its application
Electrochemical method can also prepare In 2 S 3 Thin films, but the electrochemical method has restrictions on the substrate selection of the film, and the substrate must be a conductive substrate

Method used

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  • Method for depositing indium sulfide thin film by chemical bath
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  • Method for depositing indium sulfide thin film by chemical bath

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] a) Pretreatment of the substrate: After the ordinary glass substrate is fully cleaned in an ultrasonic cleaner with toluene, acetone, and ethanol in sequence, it is rinsed with deionized water, and then washed with concentrated H with a volume ratio of 7:3. 2 SO 4 and 30%H 2 o 2 The solution was reacted and oxidized at 80°C for 30 minutes, and then the substrate was soaked in an absolute ethanol solution of mercaptosilyl ethyl ester at a volume ratio of 1:100 (mercaptosilyl ethyl ester: absolute ethanol = 1:100) for later use;

[0029] b) Add 0.02mol citric acid into a 100ml beaker, stir with 20ml deionized water to dissolve. After complete dissolution, add 0.003mol InCl 3 4H 2 O, continued stirring to obtain a clear solution A.

[0030] c) Add 1 mol / L HCl solution to solution A, adjust the pH value to 1, and obtain solution B.

[0031] d) Add 0.02mol thioacetamide and 20ml deionized water into a 50ml beaker, dissolve, slowly add the prepared thioacetamide solutio...

Embodiment 2

[0035] a) Pretreatment of the substrate: After the ordinary glass substrate is fully cleaned in an ultrasonic cleaner with toluene, acetone, and ethanol in sequence, it is rinsed with deionized water, and then washed with concentrated H with a volume ratio of 7:3. 2 SO 4 and 30%H 2 o 2 The solution was reacted and oxidized at 80°C for 30 minutes, and then the substrate was soaked in an absolute ethanol solution of mercaptosilyl ethyl ester at a volume ratio of 1:100 (mercaptosilyl ethyl ester: absolute ethanol = 1:100) for later use;

[0036] b) Add 0.02mol citric acid into a 100ml beaker, stir with 20ml deionized water to dissolve. After complete dissolution, add 0.003mol InCl 3 4H 2 O, continued stirring to obtain a clear solution A.

[0037] c) Add 1 mol / L HCl solution to solution A, adjust the pH value to 2, and obtain solution B.

[0038] d) Add 0.02mol thioacetamide and 20ml deionized water into a 50ml beaker, dissolve, slowly add the prepared thioacetamide solutio...

Embodiment 3

[0042] a) Pretreatment of the substrate: After the ordinary glass substrate is fully cleaned in an ultrasonic cleaner with toluene, acetone, and ethanol in sequence, it is rinsed with deionized water, and then washed with concentrated H with a volume ratio of 7:3. 2 SO 4 and 30%H 2 o 2 The solution was reacted and oxidized at 80°C for 30 minutes, and then the substrate was soaked in an absolute ethanol solution of mercaptosilyl ethyl ester at a volume ratio of 1:100 (mercaptosilyl ethyl ester: absolute ethanol = 1:100) for later use;

[0043] b) Add 0.02mol citric acid into a 100ml beaker, stir with 20ml deionized water to dissolve. After complete dissolution, add 0.003mol InCl 3 4H 2 O, continued stirring to obtain a clear solution A.

[0044] c) Add 1 mol / L HCl solution to solution A, adjust the pH value to 2, and obtain solution B.

[0045] d) Add 0.02mol thioacetamide and 20ml deionized water into a 50ml beaker, dissolve, slowly add the prepared thioacetamide solutio...

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Abstract

The invention relates to a method for depositing an indium sulfide thin film by a chemical bath, which belongs to the technical field of preparation of functional thin film materials. The prior method for preparing indium sulfide has higher requirements on deposition conditions, needs high-temperature heating and has great limitations in substrate deposition. The method for preparing the indium sulfide adopts citric acid or malonic acid as a complexing agent, and the uniform, dense and high crystalline indium sulfide thin film with a cubic structure can be obtained on modified ordinary glass under a water bath environment which is lower than 100 DEG C. The method has no selectivity to a substrate, is synthesized in low temperature solution and has the advantages of good crystallinity, simple process and low cost, thereby being applicable to large-scale production application.

Description

technical field [0001] The invention relates to a method for depositing an indium sulfide film in a chemical bath. In a relatively low temperature range, a dense and uniform indium sulfide film can be obtained by using citric acid or malonic acid as a complexing agent. The invention belongs to the technical field of preparation of functional thin film materials. Background technique [0002] For thin-film solar cells, the buffer layer is an integral part of the cell. Its main function is to form a p-n junction with the absorber layer, thereby maximizing the absorption of sunlight into the region between the junctions and the region of the absorber layer, so that the thin film solar cell can fully absorb sunlight to convert it into electrical energy. CulnS 2 At present, thin-film solar cells mainly use the chemical water bath method to prepare CdS thin films as the buffer layer of thin-film batteries. However, due to the existence of the toxic element cadmium, it will cause...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/16C03C17/22C01G15/00
Inventor 汪浩高志华李坤威严辉
Owner BEIJING UNIV OF TECH
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