p-CuO-n-ZnO solar cell and preparation method of p-CuO-n-ZnO solar cell

Abstract

The invention discloses a p-CuO-n-ZnO solar cell. An indium-tin-oxide (ITO) substrate, a vertically oriented ZnO nanorod array, a CuO film and an Au electrode are superposed in sequence from the bottom layer to the top layer, wherein the vertically oriented ZnO nanorod array is used as an n-type semiconductor absorption layer, and the CuO film is used as a p-type semiconductor light absorption layer and a hole transporting layer. The preparation method of the p-CuO-n-ZnO solar cell comprises the following steps of: preparing a ZnO seed crystal layer on ITO by utilizing a sol-gel method; preparing the vertically oriented ZnO nanorod array by utilizing a chemical bath deposition method; preparing the CuO film on the ZnO nanorod array by utilizing an in-situ growth method; and sputtering the Au electrode by using an ion beam sputtering system. The invention has the advantages that the equipment adopted by the preparation method is simple, and the cost is low; as CuO is adopted to serve as the light absorption layer and the hole transporting layer, compared with organic materials, the CuO has higher electromigration capacity; and by combining with the electrical conduction characteristic of inorganic ZnO with high light absorption and low thermal emittance of the CuO, the photoelectric conversion efficiency of the solar cell can be effectively increased.

Description

technical field [0001] The invention relates to the preparation of optoelectronic devices and solar cells, in particular to a p-CuO-n-ZnO solar cell and a preparation method thereof. Background technique [0002] ZnO is an n-type semiconductor material with a band gap of 3.37ev at room temperature and an exciton binding energy of 60mV. It is a promising optoelectronic device and ultraviolet emitting material. Due to its excellent photoelectric properties, non-toxicity, low price, and high stability, it occupies a very important position in the field of semiconductor materials. In addition, ZnO has a higher electron mobility and is TiO 2 10-100 times the electron mobility. [0003] The one-dimensional ZnO nanorod array is a good candidate for solar cells, mainly based on the following three points: it has a very low reflectivity, which can improve the absorption of sunlight; it has a large volume ratio and cross-sectional area, which contributes to The separation of interf...

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Problems solved by technology

[0005] At present, there have been many studies on Cu 2 O / ZnO all-inorganic pn junction solar cells have been reported, but no one has reported CuO / ZnO all-inorganic depletion layer heterojunction solar cells

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