78results about How to "Film thickness controllable" patented technology

A preparation method of neodymium iron boron magnet is disclosed. The composition general formula of the magnet provided by the invention is R1R2FeMB, wherein R1 is at least one element selected from the group consisting of Nd, Pr, La, Ce, Sm, Sc, Y and Eu, having a content of 23 to 35 wt%; R2 is at least one element selected from the group consisting of Tb, Dy, Gd, and Ho, having a content of 0.1 to 5 wt%; M represents transition group metal with the exception of Fe, having the content of 0.01 to 5 wt%; B represents simple substance boron, having the content of 0.8 to 1.2 wt%; the balance isFe and the other inevitable impurities. The preparation method of neodymium iron boron magnet provided by the invention works in such a manner that: one or more elements in the R2 are plated to the surface of the magnet, the metal R2 is diffused into the interior of the magnet by primary high temperature heat treatment, and imbalance organization and internal stress brought by the high temperature treatment are eliminated through secondary low temperature tempering. Low temperature molten salt electrodeposition method is employed to plate films. The present invention is advantageous in greatly improving the production efficiency, reducing the dosage of the heavy rare earth during preparation process of magnet, saving rare earth resource, and obtaining high coercivity without reducing remanent magnetism and magnetic energy product of a magnet.

The invention relates to a preparation method of a ZnO, CuO and ZnS quantum dot film. The preparation method comprises the following steps: preparing Cu ion modified ZnO quantum dot precipitate, CuO quantum dot precipitate and ZnS quantum dot precipitate; adding trichloromethane in the prepared quantum dot precipitates respectively to fully dissolve, then adding n-octylamine dispersant to obtain Cu ion modified ZnO colloidal quantum dot solution, CuO colloidal quantum dot solution and ZnS colloidal quantum dot solution; diluting the three kinds of colloidal quantum dot solutions with the sameamount of trichloromethane, filtering with a polytetrafluoroethylene (PTFE) filter, coating one or more of the colloidal quantum dot solutions on an indium-tin oxide (ITO) substrate through the spin-coating method, prebaking, and annealing in the air to obtain the quantum dot single-layer or multi-layer film. The preparation process of the invention is simple; the coated quantum dot film is compact and smooth and has good adhesion performance and controllable film thickness; and the quantum dot multi-layer structure is easy to realize and the quantum dot film is suitable for the multi-layer quantum dot film element.

The invention provides a method for preparing flexible transparent nano paper by utilizing bamboo fibers. The flexible transparent nano paper is prepared by using the bamboo fibers as raw materials and carrying out five treatment processes including swelling and degumming, delignification, bleaching treatment, nano fibrillation treatment and paper forming. The method has the advantages that a film is formed by adopting high-pressure filtration, the process is simple, and the film thickness is controllable; the prepared transparent nano paper has the characteristics of micropore structure, large specific surface area, transparency and flexibility; the transparent nano paper has good application prospects in the fields such as thin film solar batteries, super-capacitors, lithium-ion battery separators, catalytic carriers, environmental management, antistatic electricity and the like.

A b-oriented MFI zeolite membrane with variable thickness is provided. The MFI zeolite membrane is composed of zeolite crystals whose b-axes are all uniformly oriented perpendicular to a substrate. Further provided is a method for preparing the MFI zeolite membrane. The method comprises forming zeolite or zeotype molecular sieve seeds with different thicknesses on a substrate and adding the seeded substrate to a gel for the synthesis of an MFI zeolite containing a structure-directing agent to grow zeolite or zeotype molecular sieve crystals thereon. The MFI zeolite membrane overcomes the limitations of prior art zeolite membranes to maximize its applicability.

The invention relates to a transfer membrane used for preparing an electrode comprising (a) a bottom substrate and (b) at least a coating layer, which is disposed on the bottom substrate, and comprises binder and fillers. The thickness of the coating layer is in a range from 2-40 micrometers. The invention also relates to a manufacturing method of the membrane electrode, which comprises (1) providing a base material; (2) disposing the transfer membrane on the base material, and arranging the coating layer between the bottom substrate and the base material; (3) transferring the coating layer on the base material; (4) removing the bottom substrate to form the membrane electrode. The invention also relates to the membrane electrode manufactured by using the above mentioned method.

The invention provides a preparation process of an Nd-Fe-B permanent magnet and a magnet prepared by using the preparation process, belonging to the field of a magnetic functional material and a preparation technology. The preparation process comprises the following specific steps of: growing an RbX3 thin film on a surface of the magnet by using a chemical bath deposition method; secondly, diffusing elements in the RbX3 thin film, which is plated on the surface of the magnet, to the inside of the magnet through primary heat treatment; and uniformly distributing an element Rb at a crystal boundary position through secondary heat treatment, and removing an unbalanced structure and an internal stress, which are brought by the primary heat treatment in the magnet, wherein a chemical formula of the prepared magnet is RaRbXFeMB. The preparation process provided by the invention has the advantages that the neodymium-iron-boron magnet is prepared by using the chemical bath method, so that the production efficiency can be improved, and the use amount of heavy rare earth in the preparation process of the magnet is reduced. Meanwhile, a high coercive force is obtained under the premise of not reducing magnet remanence and magnetic energy product.

The invention belongs to the field of macromolecular / inorganic hybrid materials and ion sensing application and in particular relates to a preparation method of a polyelectrolyte / graphene oxide multilayered film. The preparation method comprises the following steps: firstly, preparing a functional modified graphene oxide dispersion solution; then immersing a base material into a polyethylenimine water solution and adsorbing a polyethylenimine molecular chain on the surface; taking out the base material, washing and drying by blowing; then immersing the polyethylenimine modified base material into the functional modified graphene oxide dispersion solution; adsorbing modified graphene oxide on the surface of the base material due to electrostatic interaction, taking out the base material, washing and drying by blowing; repeating the process to obtain the polyelectrolyte / graphene oxide multilayered film with a uniform lamellar structure. The macromolecular / inorganic hybrid material and heavy metal ions have a coordinated complexing effect and a space matching effect, so that the multilayered film has selectivity and high-capacity heavy metal ion adsorption capability; a quartz crystalmicrobalance technology is utilized for realizing the adsorption response behavior of the multilayered film on various metal ions in water.

The invention provides a preparation method of conducting polymer / grapheme composite nanometer material. The preparation method comprises the following steps that: (1) graphene is dipped in an oxidizing agent solution, and then is centrifugally separated and dried to obtain graphene which contains an oxidizing agent; (2) the graphene which contains the oxidizing agent and a conducting polymer monomer are respectively positioned in different positions in a closed container for reaction; and (3) the reaction product is centrifuged, washed and dried to obtain the conducting polymer / grapheme composite nanometer material. According to the preparation method disclosed by the invention, a solvent is not used, the condition is simple, the purity is high, and the structure of the graphene is not destroyed; film thickness is controllable, and the film thickness can be controlled by changing the proportion of the monomer and the graphene and the time of polymerization; the quality of the film is good, and the film thickness is uniform; the graphene and the conducting polymer have high compatibility due to the conjugate structure of the graphene and the conducting polymer; and the prepared composite material has high conductivity, excellent electrochemistry activity and good cycling stability, and can be applied in the fields of energy sources such as a super capacitor, a lithium battery and the like, and the fields of a sensor and the like.

The invention discloses a thin film. The thin film is prepared from the following raw materials in parts by mass: 70 to 88 parts of high-density polyethylene, 8 to 25 parts of linear low-density polyethylene, 0.5 to 5 parts of an anti-blocking agent, 0.1 to 3 parts of a slipping agent and 0.5 to 5 parts of an antistatic agent. The invention further discloses a preparation method of the thin film; the thin film is prepared by conveying each layer of the thin film into a die head through an extruder and extruding, and carrying out film blowing, drafting and curling after air ring cooling. The thickness of the thin film prepared by the invention is controllable and can be lowered to be 1c to 2c; meanwhile, the breaking strength and the tensile strength are high and the heat stability is good.

The invention discloses a method for preparing an organic ammonium metal halide film. A half-closed type carrier gas free hot wall type low-pressure chemical vapor deposition method process is adopted to prepare the organic ammonium metal halide film. The method comprises the following steps: firstly, preparing a metal halide (MX2) film on a quartz substrate by using a dry method or a wet method, and transferring the metal halide (MX2) film into a glass tube for annealing, wherein one end of the glass tube is sealed and the other end is grounded; secondly, transferring the energy to organic ammonium (AX) powder inside the glass tube through a hot wall, forming steam blocks through self-diffusion of AX steam in low vacuum, performing chemical reaction on MX2 with a hot substrate to generate the film which is uniform in thickness, good in appearance, high in light absorption rate and smooth in surface, and performing in-situ annealing so as to generate the AMX3 film which is dense in structure and high in crystallinity degree. The method has the advantages that in-situ annealing can be performed in the film formation process, continuous vacuuming is not needed, the preparation time is shortened, the energy consumption is reduced, the filming efficiency is high, the charge capture trap in the film is reduced, and the carrier mobility is increased.

The invention discloses a room-temperature-curing super-hydrophobic coating specially used for electricity, and preparation and use methods of same. The coating includes, by mass, 50%-63% of an organic solvent, 10%-20% of hydrophobic nanoparticles, 1%-2% of a silane coupling agent, 10%-25% of fluorocarbon resin, 7%-20% of acrylic resin, and 0.5-1% of an odor-covering agent. The components are stepwise stirred and mixed and then are ultrasonically dispersed uniformly to make the coating. The use method of the coating includes fill-packaging the coating and directly spray-coating surface of facilities therewith, wherein the thickness of the coating layer only need to avoid sagging phenomenon, and curing the coating for 30 min to 2 h according to the thickness at room temperature. The super-hydrophobic coating is simple in preparation method and low in cost, is convenient to use, has super-hydrophobicity and weather resistance, has insulation performance, and has wide application prospect.

The invention relates to a sulfide target cosputtering preparation method of a CZTSSe film and a product thereof. The cosputtering preparation method of a copper-zinc-tin-sulfur-selenium (Cu2ZnSn(SSe)4, CZTSSe for short) film absorption layer comprises the following steps: (1) preparing a Cu-Zn-Sn-S precursor prefabricated film on a soda-lime glass substrate by using a sulfide target by a cosputtering technique; (2) carrying out direct vulcanization-free high-temperature annealing treatment on the Cu-Zn-Sn-S precursor prefabricated film obtained by cosputtering to prepare a copper-zinc-tin-sulfur (Cu2ZnSnS4, CZTS for short) film absorption layer; and (3) preparing the Cu-Zn-Sn-S precursor prefabricated film by using the optimized preparation scheme in the step (2), and preparing the CZTSSe film absorption layer by using a solid selenium source (Se powder) selenizing annealing technique. The product CZTS / CZTSSe film has higher photoabsorption coefficient, and is an ideal film solar cell material.

The invention discloses a quantum dot sensitized solar battery and a preparation method thereof. The quantum dot sensitized solar battery comprises a nano-crystal porous layer, wherein a quantum dot thin film layer and a passivation layer cover the surfaces of nano-crystal particles of the nano-crystal porous layer in sequence; the quantum dot thin film layer is formed by an ultrasonic spraying method. By adoption of the ultrasonic spraying method, a narrow-gap inorganic quantum dot precursor solution is sprayed on the surfaces of the nano-crystal particles; compared with a quantum dot sensitized solar battery prepared by a conventional deposition method, the quantum dot sensitized solar battery disclosed by the invention has the advantage that the obtained quantum dot thin film layer is more uniform; furthermore, in the preparation process, the thickness of the quantum dot thin film layer can be controlled by controlling the spraying time of ultrasonic spraying, so that the uniform quantum dot thin film layer with a controllable film thickness can be obtained; the uniformity and the light absorption intensity of quantum dot deposition are improved, so that the quality of the quantum dot thin film layer is improved. The quantum dot sensitized solar battery prepared by the method disclosed by the invention is higher in stability; meanwhile, the photoelectric conversion efficiency is obviously improved, and the quantum dot sensitized solar battery is suitable for large-scale application.

The present invention relates to an optical disc having a cured product layer of an ultraviolet-curable resin composition containing (A) dicyclopentenyloxyethyl acrylate, (B) urethane (meth)acrylate and / or (C) epoxy (meth)acrylate, and (D) photopolymerization initiator, and a resin composition for the cured product layer thereof and a cured product therewith; and the optical disc of the present invention has less warping after curing and is excellent in transparency and durability and therefore suitable for next generation high density optical discs where recording and / or reproducing are performed using a blue laser; the resin composition for said cured product layer has less deterioration with age and less viscosity change in recycle and is suitable for a coating agent of optical discs and for efficient production of optical discs.

The invention provides a fabrication process of a high-coercivity Nd-Fe-B rare-earth permanent magnet. A technology of preparing a rare-earth thin film from an ion liquid is applied to fabricate a high-performance magnet, a Rb thin film is grown on a surface of the magnet by the technology, a Rb element plated on the surface of the magnet is diffused to the interior of the magnet by primary high-temperature thermal processing, a rare-earth rich phase is uniformly distributed around the magnet by secondary low-temperature tempering, and meanwhile, unbalanced tissue and internal stress brought by high-temperature processing are eliminated. The intrinsic coercivity of the magnet after being processed by the process can be obviously improved, so that the high-coercivity Nd-Fe-B rare-earth permanent magnet is fabricated. By the process, the production efficiency can be improved, the heavy rare-earth dosage during the fabrication process is reduced, and meanwhile, high coercivity is obtainedunder the condition that residual magnetism and magnetic energy product of the magnet are not reduced.

The invention relates to a preparation method of ZnO sol compounded Sn doping ZnO thick films. The method comprises the three major steps that a hydrothermal method is adopted for preparing a Sn doping ZnO powder body, a sol-gel method is adopted for preparing ZnO sol, and a scalpel method is adopted for preparing the ZnO sol compounded Sn doping ZnO thick films. The Sn doping ZnO powder body has mesoporous structures and has greater specific surface area, the viscosity of the ZnO sol is controllable, and the finally obtained ZnO thick films have strong adhesive force, uniform granularity, controllable film thickness and excellent performance. When the ZnO sol compounded Sn doping ZnO thick films prepared by the method are applied to dye sensitization solar batteries, the better photovoltaic conversion performance is obtained.

The invention discloses a transition metal doped ZnO-based ferromagnetic polycrystalline thin film. The material for forming the ferromagnetic polycrystalline thin film is Zn1-x(TM)xO, wherein TM is transition metal element Cu, Co or Mn; for Cu, x is more than 0 and less than 0.03; and for Co and Mn, x is more than 0 and less than 0.08. The invention also discloses a method for preparing the transition metal doped ZnO-based ferromagnetic polycrystalline thin film. The method comprises the following steps of: preparing TM doped ZnO nanocrystalline precipitate through transition metals and acetate precursor solution of zinc, dispersing and spinning to obtain the transition metal doped ZnO-based ferromagnetic polycrystalline thin film. In order to enhance the ferromagnetic stability of the polycrystalline thin film and improve the transport property, hydrogen plasma optimization treatment is performed. The method is simple in process and low in cost, the doping concentration can be adjusted in a wide range, the obtained polycrystalline thin film is dense, flat and high in adhesion property, has an obvious hysteresis loop at room temperature and can be applied to quantum spinning devices.

The invention discloses a preparation method of an abrasion-resistant coating of a stainless steel base material. The preparation method comprises the steps that (a) pretreatment, including ultrasonic cleaning, oxidation treatment and silane coupling agent treatment, is conducted on the stainless steel base material; (b) the surface of the treated stainless steel base material is coated with oxidized graphene through a solution casting method; and (c) graphitize treatment is conducted on the obtained oxidized graphene coating. The abrasion-resistant coating prepared through the preparation method has both the lubricating property of graphene and the excellent film formation property of oxidized graphene, the price is low, and the excellent abrasion-resistant property is achieved.

The invention discloses metal copper powder film coating equipment and a coating method. The metal copper powder film coating equipment comprises a transporter, a coating device and an earthing device, wherein the coating device can provide metal copper powder and causes the metal copper powder to have positive charges, and the earthing device is connected with metal base material and guides the positive charge of the metal base material to the earth surface, so that the metal base material is charged negatively. When the metal base material is transported by the transporter and passes through the coating device, the coating device coats metal powder with the positive charges on the metal base material with negative charges; and because of the electrostatic force adsorption effect, metal copper power is coated on the metal base material. Compared with the manual coating mode, the invention is quick and convenient and is easy to control the thickness of the film.

The invention discloses a preparation method for a self-adsorption type liquid pigment for regulating brightness of a paper product. According to the method, a purple pigment filter cake and a blue pigment filter cake are compounded; N,N-dimethyl formamide and triethanolamine are adopted to treat the compounded pigment filter cake; a silica sol and a siloxane coupling agent are adopted to carry out surface film coating on the compounded pigment filter cake, wherein the film thickness is controlled in the range of 50-100 nm; 10.0-30.0 wt.% of the film coated compounded pigment, 2.0-10.0 wt.% of a dispersing agent, 0.01-0.8 wt.% of an antibacterial agent, and the balance of deionized water are mixed, and are subjected to mechanical crushing to prepare into the liquid pigment capable of self-adsorption with paper pulp fibers and fillers. The preparation process of the method of the present invention is simple and feasible, and the obtained liquid pigment can be used for regulating the brightness of the paper product.

The invention discloses a stripping method for magnetron sputtering in a surface acoustic wave filter, and relates to the field of microelectronics. The method comprises the following steps: spin-coating polyamide acid before spin-coating photoresist, and performing baking to obtain polyamide acid with the thickness of 0.5 [mu]m. The method comprises the following steps: curing a polyamide acid film, spin-coating positive photoresist on the cured polyamide acid film, performing contact exposure and development, and obviously observing that more polyamide acid positioned on the lower layer of the photoresist is exposed by a developing solution through a microscope, so an inverted T shape is formed; after the metal film Al with the thickness of 0.2 [mu]m is deposited, employing the N-methyl pyrrolidone stripping liquid for stripping, so the metal film is prevented from being damaged due to stripping, the uniformity of the thickness of the metal film is better, the film thickness is more controllable, and the edge of the metal line is particularly neat and smooth after the stripping is completed.

The invention provides a transparent OLED alloy cathode, a manufacturing method thereof and a transparent OLED device. The alloy cathode is Ag and Al alloy, the mass ratio of Ag to Al is 75-80% to 25-20%, the best thickness of the Ag and Al alloy is 75 nm, and Ag and Al adopt a vacuum melting method to be melted in a quartz glass tube in a vacuum condition and are naturally cooled to form the alloy. The Ag and Al alloy cathode of the invention can improve the electron injection capability of the cathode, the performance is better than a single metal cathode OLED device, and the cathode can be applied to the transparent OLED; and the Ag and Al alloy can be evaporated through only one tungsten boat, while the operation difficulty is reduced, the film thickness is easier to be controlled, and the device structure is optimized.

The invention discloses a PU double-component multifunctional undercoat and a preparation method thereof. Acrylic resin is matched with isocyanate. Lithium aluminium silicate is employed as a filling material for enhancing a rubbing property of the undercoat, covering traces caused by an abrasive paper and improving a covering capability. The undercoat is excellent in functionality, is good in the rubbing property and recoatability. In a production line, the undercoat can increase a yield in the production line and can reduce scrap of materials. Thickness of a film of the PU double-component multifunctional undercoat is liable to control and a protective property of the film to a coating can be enhanced. The PU double-component multifunctional undercoat is excellent in wear resistance and scrape resistance and a good storage condition is provided .The PU double-component multifunctional undercoat is high in hardness and toughness, is excellent in flexibility and anti-chemical performance, is low in contractility and is not liable to deform. The PU double-component multifunctional undercoat is adjustable in surface glossiness so that a high glossiness and a matted glossiness are both available. The PU double-component multifunctional undercoat also enables color adjustment to be available so that selectivity of color is more diversified.

The invention provides an OLED alloy cathode and a preparation method thereof. The OLED alloy cathode is Ca, Mg, Al ternary alloy. The Ca, Mg, and Al are mixed according to a ratio of Ca: Mg: Al = 15%: (5%-25%): (80%-60%) and are formed by being melted through a vacuum melting method in a quartz glass tube under the vacuum condition and being cooled naturally. The Ca-Mg-Al alloy cathode is improved in emissive capability and superior to a Ca: Al alloy cathode OLED device, and can be evaporated by one evaporation boat. As a result, not only is difficulty in operation reduced, but also a film thickness is easier to control and a result is more accurate.

The invention discloses a method for preparing an antimony tetrasulfide tricopper film of a solar cell absorption layer through a gas-solid reaction. A substrate is one of a molybdenum-plated film, conductive glass, soda-lime glass, quartz glass or metal foil; the purity of a Cu target material subjected to magnetron sputtering is 99.8%; the Cu target material is deposited on the clean substrate in an argon atmosphere through magnetron sputtering to form a Cu precursor film; and the obtained Cu precursor film is placed in a Sb2S3+S atmosphere for heat treatment to finally obtain the Cu3SbS4 film. According to the method, the gas-solid reaction is carried out after magnetron sputtering of the Cu precursor film, and the method has the advantages that the synthesized film is pure and single in phase formation, simple in manufacturing process, safe, non-toxic, not complex in preparation equipment, capable of achieving large-area production, easy to control in thickness and the like.

The invention discloses LIV effect adjustable lanthanum-calcium-manganese-oxygen thin film preparation equipment. The LIV effect adjustable lanthanum-calcium-manganese-oxygen thin film preparation equipment comprises a cabinet body, a laser generator, a vacuum system, an atmosphere system, a target material system, a thin film system, a shoot plating system, a magnetic control system, a film thickness testing system and an LIV performance adjusting system. According to the LIV effect adjustable lanthanum-calcium-manganese-oxygen thin film preparation equipment, the controllability of the thinfilm quality can be greatly improved, thus the film thickness is controllable, and a large-area application-type thin film can be prepared by enlarging the magnetic field range; preparation of the multi-component thin film can be conducted by switching materials in real time, it is ensured that preparation conditions are the same, and the thin film of different states can be prepared under same adjustment; and a real-time testing function is achieved, the film thickness of the thin film and the LIV effect performance can be monitored in real time, the technological adjusting period can be greatly shortened, the work procedure conditions can be adjusted in time to prepare samples meeting the requirement, the raw material utilization rate is increased, and the development cost is reduced.

The invention discloses a device and a method for preparing a magnesium oxide-based film with high secondary emission performance. The device comprises a thermal evaporation vacuum chamber, a thermalevaporation source substance, a tungsten boat and a substrate material which are arranged in the vacuum chamber, a vacuum tube furnace, and a gas flow controller, a fine tuning needle valve and oxygenwhich are matched with the vacuum tube furnace. A metal or alloy film is deposited on the surface of the substrate material through thermal evaporation, then trace oxygen is introduced into the vacuum tube furnace, the vacuum in the tube is kept at 5-100 Pa, the temperature is kept at 400-650 DEG C, thermal activation treatment is conducted, and a magnesium oxide-based film which is high in secondary emission coefficient and stable in emission is obtained, and the thickness of the thin film is about 100 nm to 1 [mu]m. The method is simple in process, adjustable in film structure and composition and stable in secondary emission performance, does not need to use an expensive ion source or an electronic gun, and is expected to be developed and applied to the fields of photoelectric multiples, image intensifiers, plasma flat-panel displays and the like.