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Preparation method of ZnO sol compounded Sn doping ZnO thick films

A sol and thick film technology, applied in the direction of photosensitive equipment, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of increasing carrier recombination centers, reducing current, etc., to achieve reduced processing costs, excellent performance, increased The effect of specific surface area

Inactive Publication Date: 2013-08-07
SHANGHAI UNIV
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Problems solved by technology

But too thick dye will increase the recombination centers of carriers, which in turn reduces the current

Method used

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  • Preparation method of ZnO sol compounded Sn doping ZnO thick films
  • Preparation method of ZnO sol compounded Sn doping ZnO thick films
  • Preparation method of ZnO sol compounded Sn doping ZnO thick films

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Embodiment

[0024] A preparation method of ZnO sol composite Sn-doped ZnO thick film, the method comprises the following steps:

[0025] A. Preparation of Sn-doped ZnO powder by hydrothermal method: triblock copolymer P123 as template, zinc acetate dihydrate as precursor, tin tetrachloride pentahydrate as dopant, urea as buffer, water as Solvent and hydrothermal method prepared Sn-doped ZnO powder, in which the molar ratio of Zn to Sn was 9:1. First, dissolve 0.548g of triblock copolymer P123, 0.988g of zinc acetate dihydrate, and 1.5g of urea into 100mL of deionized water, stir well, add 0.175g of tin tetrachloride pentahydrate, continue stirring for 2 hours, and then transfer to the autoclave Inside, heat at 90°C for 24h, and finally filter, dry at 90°C, and anneal at 450°C for 4h to obtain Sn-doped ZnO powder;

[0026] B. Preparation of ZnO sol by Sol-gel method: triblock copolymer P123 as template, zinc acetate dihydrate as precursor, absolute ethanol as solvent, diethanolamine as st...

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Abstract

The invention relates to a preparation method of ZnO sol compounded Sn doping ZnO thick films. The method comprises the three major steps that a hydrothermal method is adopted for preparing a Sn doping ZnO powder body, a sol-gel method is adopted for preparing ZnO sol, and a scalpel method is adopted for preparing the ZnO sol compounded Sn doping ZnO thick films. The Sn doping ZnO powder body has mesoporous structures and has greater specific surface area, the viscosity of the ZnO sol is controllable, and the finally obtained ZnO thick films have strong adhesive force, uniform granularity, controllable film thickness and excellent performance. When the ZnO sol compounded Sn doping ZnO thick films prepared by the method are applied to dye sensitization solar batteries, the better photovoltaic conversion performance is obtained.

Description

technical field [0001] The invention relates to a method for preparing a ZnO sol compounded Sn-doped ZnO thick film, in particular to a method for preparing a ZnO thick film on a conductive glass substrate by combining technologies such as hydrothermal method, sol-gel method and scalpel method . Background technique [0002] ZnO is a direct wide bandgap compound semiconductor material with a wurtzite structure in the Ⅱ-Ⅵ group. The bandgap at room temperature is 3.36eV, the lattice constant a=0.32496nm, c=0.52065nm. Due to its excellent electrical, optical and piezoelectric properties, it is widely used in many fields. with mesoporous TiO 2 In contrast, ZnO has some unique properties, such as ZnO has a large exciton binding energy (60meV) and a small Bohr radius (1.8nm), showing extremely strong exciton recombination characteristics, and the electron mobility in ZnO Greater than TiO 2 Electron mobility in , etc. Due to its unique photoelectric properties, ZnO nanomateri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20
CPCY02E10/542Y02P70/50
Inventor 沈悦吴启霜王倩娣曹萌顾峰
Owner SHANGHAI UNIV
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