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Method for preparing antimony tetrasulfide tricopper film of solar cell absorption layer through gas-solid reaction

A solar cell and gas-solid reaction technology, applied in coatings, circuits, electrical components, etc., can solve the problems of increased process difficulty due to selective deposition characteristics and difficulty in effectively controlling components, so as to achieve less strict control conditions and lower operating costs. The effect of difficult process and high purity

Pending Publication Date: 2021-03-12
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] It is found through patent retrieval to prior art documents that in the preparation of Cu 3 Sb 4 In the solar cell absorbing layer method, Cu has been synthesized by solution hot injection method. 3 Sb 4 The method of coating and forming a film after nanoparticles, but its selective deposition characteristics increase the difficulty of the process; the Cu-Sb metal salt precursor film is deposited by the solution method and then placed in H 2 Annealing in S vapor environment to prepare Cu 3 Sb 4 film, but H 2 The high toxicity of S limits its large-scale production, while Sb during high temperature annealing 2 S 3 Easy to sublimate and lose, which makes it difficult to effectively control its components

Method used

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  • Method for preparing antimony tetrasulfide tricopper film of solar cell absorption layer through gas-solid reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Preparation of solar cell absorber layer Cu by a gas-solid reaction 3 Sb 4 thin film method

[0027] 1. First, clean the glass substrate: immerse the glass substrate in detergent, acetone, ethanol and deionized water solution for ultrasonic cleaning, and then dry it to obtain a clean glass substrate;

[0028] 2. Place the cleaned glass substrate in the magnetron sputtering studio;

[0029] 3. Use the magnetron sputtering coating system to pump the background vacuum of the sputtering system to less than 10 -4 Pa;

[0030] 4. Sputtering gas Ar bombards the target through the magnetron sputtering coating machine,

[0031] The sputtering gas uses argon with a purity of 99.9%;

[0032] The target material adopts a copper target with a purity of 99.8%;

[0033] The working air pressure in the magnetron sputtering studio is 0.3Pa;

[0034] 5. The setting parameters are: power: 120W; gas flow: 60sccm; deposition time: 2h;

[0035] 6. The sputtered copper is attached to ...

Embodiment 2

[0039] Preparation of solar cell absorber layer Cu by a gas-solid reaction 3 Sb 4 thin film method

[0040] 1. First, clean the glass substrate: immerse the glass substrate in detergent, acetone, ethanol and deionized water solution for ultrasonic cleaning, and then dry it to obtain a clean glass substrate;

[0041] 2. Place the cleaned glass substrate in the magnetron sputtering studio;

[0042] 3. Use the magnetron sputtering coating system to pump the background vacuum of the sputtering system to less than 10 -4 Pa;

[0043] 4. Sputtering gas Ar bombards the target through the magnetron sputtering coating machine,

[0044] The sputtering gas uses argon with a purity of 99.9%;

[0045] The target material adopts a copper target with a purity of 99.8%;

[0046] The working air pressure in the magnetron sputtering studio is 0.3Pa;

[0047] 5. The setting parameters are: power: 60W; gas flow: 60sccm; deposition time: 2h;

[0048] 6. The sputtered copper is attached to t...

Embodiment 3

[0051] 1. First, clean the glass substrate: immerse the glass substrate in detergent, acetone, ethanol and deionized water solution for ultrasonic cleaning, and then dry it to obtain a clean glass substrate;

[0052] 2. Place the cleaned glass substrate in the magnetron sputtering studio;

[0053] 3. Use the magnetron sputtering coating system to pump the background vacuum of the sputtering system to less than 10 -4 Pa;

[0054] 4. Sputtering gas Ar bombards the target through the magnetron sputtering coating machine,

[0055] The sputtering gas uses argon with a purity of 99.9%;

[0056] The target material adopts a copper target with a purity of 99.8%;

[0057] The working air pressure in the magnetron sputtering studio is 0.3Pa;

[0058] 5. The setting parameters are: power: 75W; gas flow: 60sccm; deposition time: 0.5h;

[0059] 6. The sputtered copper is attached to the substrate, and the thickness of the Cu film is 100nm;

[0060] 7. Use the Cu precursor film obtain...

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Abstract

The invention discloses a method for preparing an antimony tetrasulfide tricopper film of a solar cell absorption layer through a gas-solid reaction. A substrate is one of a molybdenum-plated film, conductive glass, soda-lime glass, quartz glass or metal foil; the purity of a Cu target material subjected to magnetron sputtering is 99.8%; the Cu target material is deposited on the clean substrate in an argon atmosphere through magnetron sputtering to form a Cu precursor film; and the obtained Cu precursor film is placed in a Sb2S3+S atmosphere for heat treatment to finally obtain the Cu3SbS4 film. According to the method, the gas-solid reaction is carried out after magnetron sputtering of the Cu precursor film, and the method has the advantages that the synthesized film is pure and single in phase formation, simple in manufacturing process, safe, non-toxic, not complex in preparation equipment, capable of achieving large-area production, easy to control in thickness and the like.

Description

technical field [0001] The invention relates to the technical field of solar cell materials and devices, in particular to gas-solid reaction to prepare solar cell absorbing layer Cu 3 Sb 4 thin film method. Background technique [0002] In recent years, the energy crisis and environmental pollution have become increasingly severe, and human beings urgently need to seek a renewable and clean energy source. Among them, solar energy has the advantages of large reserves and cleanness, and has attracted widespread attention. The most direct and effective way to utilize solar energy is photovoltaic cells. At present, the most mature cells are silicon-based solar cells, but inorganic thin-film solar cells are also well known because of their low material consumption, low energy consumption, and The advantages of low-light and high-temperature power generation performance, light weight and flexible products have become a hot research field in solar cells. [0003] The Cu-Sb-S sy...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/18C23C14/58H01L31/032H01L31/18
CPCC23C14/35C23C14/18C23C14/5866H01L31/18H01L31/032Y02P70/50
Inventor 陈桂林李虎林丽梅黄志高
Owner FUJIAN NORMAL UNIV
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