Stripping method for magnetron sputtering in surface acoustic wave filter

Abstract

The invention discloses a stripping method for magnetron sputtering in a surface acoustic wave filter, and relates to the field of microelectronics. The method comprises the following steps: spin-coating polyamide acid before spin-coating photoresist, and performing baking to obtain polyamide acid with the thickness of 0.5 [mu]m. The method comprises the following steps: curing a polyamide acid film, spin-coating positive photoresist on the cured polyamide acid film, performing contact exposure and development, and obviously observing that more polyamide acid positioned on the lower layer of the photoresist is exposed by a developing solution through a microscope, so an inverted T shape is formed; after the metal film Al with the thickness of 0.2 [mu]m is deposited, employing the N-methyl pyrrolidone stripping liquid for stripping, so the metal film is prevented from being damaged due to stripping, the uniformity of the thickness of the metal film is better, the film thickness is more controllable, and the edge of the metal line is particularly neat and smooth after the stripping is completed.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a stripping method for magnetron sputtering in a surface acoustic wave filter. Background technique [0002] In the current stripping method used for magnetron sputtering, it is soaked in acetone and put into tetramethylammonium hydroxide solution, and the soaking time depends on the thickness of the deposited metal film. These two methods all involve the use of a developer. Since most of the photoresist developer is an alkaline solution, the above methods will cause damage to the metal film to varying degrees. [0003] The existing photoresist solution has poor temperature resistance, and the carbonization of the photoresist is caused by the magnetron sputtering coating, which is difficult to peel off, and the edges of the metal lines are not neat and clean after stripping. Contents of the invention [0004] The technical problem to be solved by the present invention is to pro...

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Problems solved by technology

Both of these methods involve the use of a developer. Since most of the photoresist developer is an alkaline solution, the use of the above methods will cause varying degrees of damage to the metal film.

[0003] The existing photoresist solution has poor temperature resistance. The carbonization of the photoresist is caused by the magnetron sputtering coating, which is difficult to peel off. After stripping, the edges of the metal lines are not neat and clean.

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