Transparent OLED alloy cathode, manufacturing method thereof and transparent OLED device

An alloy and cathode technology, which is applied in the field of OLED display and lighting, can solve the problems of unbalanced device positive load carrier injection, weak ability of cathode to emit electrons, easy oxidation or peeling, etc., so as to improve electron injection ability and easy film thickness The effect of controlling and reducing the difficulty of preparation

Inactive Publication Date: 2017-05-10
SHAANXI UNIV OF SCI & TECH
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  • Summary
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Problems solved by technology

[0005] Since single-layer metal cathodes such as Al, Mg, Li, etc. have poor stability in the atmosphere and are easily oxidized or peeled off, metals with low work function and metals with high work function are often evaporated together to form alloy cathodes to improve the stability of the device. Although commonly used alloy cathodes such as Mg/

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  • Transparent OLED alloy cathode, manufacturing method thereof and transparent OLED device
  • Transparent OLED alloy cathode, manufacturing method thereof and transparent OLED device
  • Transparent OLED alloy cathode, manufacturing method thereof and transparent OLED device

Examples

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Example Embodiment

[0039] A method for preparing a transparent OLED alloy cathode includes the following steps:

[0040] Step 1: Preparation of Ag and Al raw materials: Weigh Ag and Al raw materials according to the mass ratio Ag: Al=75-80%: 25-20% by using an electronic balance of 1 / 10,000;

[0041] Step 2: Preparation of the quartz glass tube: cut off the required length of the quartz glass tube, and use the mixed gas of oxygen and liquefied gas to melt and seal one end of the quartz glass tube for use;

[0042] Step 3: Sealing of raw materials: Put the weighed Ag and Al raw materials into a quartz glass tube whose one end is closed, and while evacuating the quartz glass tube, use a mixture of oxygen and liquefied gas to melt and seal the other end of the quartz glass tube ;

[0043] Step 4. Preparation of alloy cathode: Put the sealed quartz glass tube containing raw materials into a high-temperature sintering furnace. The temperature of the high-temperature sintering furnace is raised to 850°C withi...

Example Embodiment

[0046] Example 1:

[0047] This embodiment is a transparent OLED alloy cathode, which includes 75% Ag and 25% Al. Among them, the work function of Al is 4.28 ev, and the work function of Ag is 4.26 ev. The vacuum melting method is used to melt in a quartz glass tube under vacuum conditions and then naturally cool to form.

[0048] The preparation process is as follows:

[0049] Step 1. Preparation of Ag and Al raw materials: Weigh the required Al wire and Ag particles in a mass ratio of Ag: Al = 75%: 25% with a one-ten thousand electronic analysis balance;

[0050] Step 2. Preparation of the reaction vessel: cut off the quartz glass tube of the required length, and use the mixed gas of oxygen and liquefied gas to melt and seal one end of the quartz glass tube for use;

[0051] Step 3. Sealing of raw materials: Put the weighed Ag and Al raw materials into a quartz glass tube whose one end is closed, and while evacuating the quartz glass tube, use the mixed gas of oxygen and liquefied g...

Example Embodiment

[0054] Example 2:

[0055] This embodiment is a transparent OLED alloy cathode, which includes 75% Ag and 25% Al. Among them, the work function of Al is 4.28 ev, and the work function of Ag is 4.26 ev. The vacuum melting method is used to melt in a quartz glass tube under vacuum conditions and then naturally cool to form.

[0056] The preparation process is as follows:

[0057] Step 1. Preparation of Ag and Al raw materials: Weigh the required Al wire and Ag particles in a mass ratio of Ag: Al = 75%: 25% with a one-ten thousand electronic analysis balance;

[0058] Step 2. Preparation of the reaction vessel: cut off the quartz glass tube of the required length, and use the mixed gas of oxygen and liquefied gas to melt and seal one end of the quartz glass tube for use;

[0059] Step 3. Sealing of raw materials: Put the weighed Ag and Al raw materials into a quartz glass tube whose one end is closed, and while evacuating the quartz glass tube, use the mixed gas of oxygen and liquefied g...

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Abstract

The invention provides a transparent OLED alloy cathode, a manufacturing method thereof and a transparent OLED device. The alloy cathode is Ag and Al alloy, the mass ratio of Ag to Al is 75-80% to 25-20%, the best thickness of the Ag and Al alloy is 75 nm, and Ag and Al adopt a vacuum melting method to be melted in a quartz glass tube in a vacuum condition and are naturally cooled to form the alloy. The Ag and Al alloy cathode of the invention can improve the electron injection capability of the cathode, the performance is better than a single metal cathode OLED device, and the cathode can be applied to the transparent OLED; and the Ag and Al alloy can be evaporated through only one tungsten boat, while the operation difficulty is reduced, the film thickness is easier to be controlled, and the device structure is optimized.

Description

[0001] 【Technical Field】 [0002] The invention belongs to the technical field of OLED display and lighting, and specifically relates to a transparent OLED alloy cathode, a preparation method thereof, and a transparent OLED device. [0003] 【Background technique】 [0004] Organic electroluminescent devices (OLED) are current-type light-emitting display devices. The electrode is an important factor that affects the performance of the OLED device, that is, whether the positive load current can be injected and effectively recombined. Especially as the cathode of a transparent OLED, the cathode layer must be very thin due to the need to achieve transparency, but this will affect its conductivity and luminous efficiency. To improve the performance of the device, it is necessary to increase the injection of electrons, that is, to increase the electron emission capability of the cathode. We all know that the lower the work function of the cathode material, the lower the injection barrier,...

Claims

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Application Information

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IPC IPC(8): H01L51/52
CPCH10K50/828
Inventor 张方辉刘晋红孙立蓉张婵婵聂屈洋李亭亭王江南
Owner SHAANXI UNIV OF SCI & TECH
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