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Sulfide target cosputtering preparation method of CZTSSe film and product thereof

A technology of co-sputtering and sulfide, which is applied in the direction of sputtering coating, final product manufacturing, metal material coating process, etc., can solve the problems of low repeatability of film preparation process and uneven distribution of various elements of film, and achieve film Thickness is easy to control, solving the effect of poor sample quality and few pinholes

Inactive Publication Date: 2015-09-30
INNER MONGOLIA UNIVERSITY
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Problems solved by technology

[0006] 2. The film prepared by the co-sputtering method has uniform distribution of various elements, high density and purity of the film, less pinholes, good adhesion between the film and the substrate, high utilization rate of raw materials, and easy control of film thickness feature, which solves the problems of low repeatability of the film preparation process and uneven distribution of elements in the film, which is conducive to improving the quality of the CZTSSe film

Method used

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  • Sulfide target cosputtering preparation method of CZTSSe film and product thereof
  • Sulfide target cosputtering preparation method of CZTSSe film and product thereof
  • Sulfide target cosputtering preparation method of CZTSSe film and product thereof

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specific Embodiment approach

[0059] (1) On the soda-lime glass substrate, Cu-Zn-Sn-S precursor prefabricated film was prepared by co-sputtering:

[0060] Ⅰ. Clean the glass substrate with ionized water;

[0061] Ⅱ. Wash the glass substrate with dilute hydrochloric acid, then shake it with deionized water for 5 minutes;

[0062] Ⅲ. After cleaning the glass substrate with carbon tetrachloride, then ultrasonically oscillate with carbon tetrachloride for 10 minutes;

[0063] Ⅳ. After cleaning the glass substrate with acetone, then ultrasonically oscillate with acetone for 10 minutes;

[0064] Ⅴ. After cleaning the glass substrate with absolute ethanol, then ultrasonically oscillate with absolute ethanol for 10 minutes;

[0065] Ⅵ. Store the glass substrate in absolute ethanol for later use;

[0066] VII. Take out the glass substrate from absolute ethanol, put it into the sputtering chamber of the magnetron co-sputtering instrument after drying.

[0067] Ⅷ. Co-sputtering to prepare Cu-Zn-Sn-S precursor pre...

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Abstract

The invention relates to a sulfide target cosputtering preparation method of a CZTSSe film and a product thereof. The cosputtering preparation method of a copper-zinc-tin-sulfur-selenium (Cu2ZnSn(SSe)4, CZTSSe for short) film absorption layer comprises the following steps: (1) preparing a Cu-Zn-Sn-S precursor prefabricated film on a soda-lime glass substrate by using a sulfide target by a cosputtering technique; (2) carrying out direct vulcanization-free high-temperature annealing treatment on the Cu-Zn-Sn-S precursor prefabricated film obtained by cosputtering to prepare a copper-zinc-tin-sulfur (Cu2ZnSnS4, CZTS for short) film absorption layer; and (3) preparing the Cu-Zn-Sn-S precursor prefabricated film by using the optimized preparation scheme in the step (2), and preparing the CZTSSe film absorption layer by using a solid selenium source (Se powder) selenizing annealing technique. The product CZTS / CZTSSe film has higher photoabsorption coefficient, and is an ideal film solar cell material.

Description

technical field [0001] The present invention relates to a Cu 2 ZnSn(SSe) 4 A co-sputtering preparation method and product of (CZTSSe) thin films belong to the technical field of photovoltaic cell material preparation. Specifically, it is a co-sputtering preparation method and product of a light-absorbing layer of a thin-film solar cell. Background technique [0002] In today's society, the problems of energy crisis and environmental pollution are becoming more and more serious. As the most promising clean and green energy conversion device, solar cells have shown great application potential and broad development prospects. At present, two mainstream thin-film solar cells, cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) thin-film cells, are constrained by the scarcity of raw materials, high cost, and the toxicity of constituent elements when facing large-scale production, and their production materials are insufficient. Prospects for long-term, broad app...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/58C23C14/06H01L31/032
CPCY02P70/50
Inventor 朱成军刘倩吕笑公
Owner INNER MONGOLIA UNIVERSITY
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