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Method for preparing organic ammonium metal halide film

A metal halide, organic ammonium technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem of inability to use flexible substrates, achieve violent molecular motion, reduce production costs, and have fewer defects Effect

Inactive Publication Date: 2015-03-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, traditional CVD methods usually cannot be used on flexible substrates due to high temperature issues

Method used

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  • Method for preparing organic ammonium metal halide film
  • Method for preparing organic ammonium metal halide film
  • Method for preparing organic ammonium metal halide film

Examples

Experimental program
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Effect test

Embodiment 1

[0042] A method for preparing an organic ammonium metal halide film, which is prepared by a semi-closed carrier-free hot-wall low-pressure chemical vapor deposition (HW-LPCVD) process, comprising the following steps:

[0043] 1) Cleaning of quartz slices: Ultrasonic cleaning of quartz slices with acetone, isopropanol, and deionized water for 30 minutes, drying with compressed air, and ozone treatment for 10 minutes; 0.23g PbI 2 Dissolve in 0.5mL anhydrous DMF, heat to 60°C, and magnetically stir for 30 minutes; spin-coat PbI on a cleaned 2.5cm×2.5cm quartz glass at 6000rpm 2 DMF solution for 30s; heat the substrate on a hot stage at 100°C for 5 minutes, cool to room temperature naturally, and spin-coat the PbI 2 The quartz slices were transferred to an argon-filled glove box.

[0044] 2) Put the preparation device into the glove box and open the valve, weigh 0.02 g of CH 3 NH 3 I, place evenly in the area covered by the heating mantle.

[0045] 3) PbI 2 The quartz slice i...

Embodiment 2

[0054] A method for preparing an organic ammonium metal halide film, which is prepared by a semi-closed carrier-free hot-wall low-pressure chemical vapor deposition (HW-LPCVD) process. The steps are basically the same as in Example 1, except that the quartz plate The cleaning method is as follows:

[0055] Ultrasonic cleaning of quartz plates with acetone, isopropanol, and deionized water for 30 minutes, drying with compressed air, and ion bombardment for 10 minutes; -4 Prepare a layer of 80nm PbI on the cleaned 2.5cm×2.5cm quartz at a rate of 0.1nm / s under Pa background pressure 2 Thin film, the source-base distance is 40cm, the source is loaded on a tungsten boat, the substrate distribution adopts a rotating spherical distribution, and its thickness is controlled by a calibrated quartz crystal oscillator. The substrate temperature is 80°C, then the PbI 2 The quartz slices were transferred to an argon-filled glove box.

[0056] Image 6 CH prepared by carrier-free hot-wal...

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Abstract

The invention discloses a method for preparing an organic ammonium metal halide film. A half-closed type carrier gas free hot wall type low-pressure chemical vapor deposition method process is adopted to prepare the organic ammonium metal halide film. The method comprises the following steps: firstly, preparing a metal halide (MX2) film on a quartz substrate by using a dry method or a wet method, and transferring the metal halide (MX2) film into a glass tube for annealing, wherein one end of the glass tube is sealed and the other end is grounded; secondly, transferring the energy to organic ammonium (AX) powder inside the glass tube through a hot wall, forming steam blocks through self-diffusion of AX steam in low vacuum, performing chemical reaction on MX2 with a hot substrate to generate the film which is uniform in thickness, good in appearance, high in light absorption rate and smooth in surface, and performing in-situ annealing so as to generate the AMX3 film which is dense in structure and high in crystallinity degree. The method has the advantages that in-situ annealing can be performed in the film formation process, continuous vacuuming is not needed, the preparation time is shortened, the energy consumption is reduced, the filming efficiency is high, the charge capture trap in the film is reduced, and the carrier mobility is increased.

Description

【Technical field】 [0001] The invention relates to the technical field of organic-inorganic hybrid semiconductors, in particular to a method for preparing an organic ammonium metal halide thin film. 【Background technique】 [0002] Organic-inorganic hybrid organic ammonium metal halides (AMX 3 ) is usually in the perovskite crystal form, so it is also called organic-inorganic perovskite compound (IOP). AMX 3 Usually made of metal halides (MX 2 ) and organic ammonium halide (AX) two components. Photovoltaic technology is a new type of renewable energy that has developed rapidly in recent decades. With the advancement of technology, its photoelectric conversion efficiency has been greatly improved. Among them, the stacked cell composed of GaAs / InP has the highest conversion efficiency of 44.7%. Solar cells made of crystalline silicon achieve 25 percent efficiency, while those made of copper indium gallium selenide (CIGS) reach 21 percent. Although the above conventional s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
Inventor 曹焕奇陈晓敏杨利营印寿根
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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