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Transition metal doped ZnO-based ferromagnetic polycrystalline thin film and preparation method thereof

A technology of transition metals and transition metal elements, which is applied in the field of preparation of dilute magnetic semiconductor polycrystalline thin films, can solve the problems of high resistivity, difficult application of spin devices, unstable ferromagnetic phenomena, etc., and achieve stable magnetic properties, The effect of adjustable thickness and low cost

Inactive Publication Date: 2013-07-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the high resistivity of the TM-doped ZnO film in the prior art, it is difficult to be applied to spin devices, and there is a problem of unstable ferromagnetism. The present invention provides a transition film with good optical properties and stable magnetic properties. Metal-doped ZnO-based polycrystalline ferromagnetic thin films

Method used

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  • Transition metal doped ZnO-based ferromagnetic polycrystalline thin film and preparation method thereof
  • Transition metal doped ZnO-based ferromagnetic polycrystalline thin film and preparation method thereof
  • Transition metal doped ZnO-based ferromagnetic polycrystalline thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] 1) 0.4914g Zn(CH 3 COO) 2 , 0.0103g Cu(CH 3 COO) 2 The powder was dissolved in 30mL and 20mL methanol solutions respectively, and both were refluxed in a water bath at 80°C for 60 minutes to obtain Zn(CH 3 COO) 2 and Cu(CH 3 COO) 2 The precursor solution;

[0047] 2) Add 10mL of 0.2mol / L KOH methanol solution dropwise to the Zn(CH 3 COO) 2 In the precursor solution, add Cu(CH 3 COO) 2 Add the precursor solution to the above solution, after the temperature drops to 60°C, add 10mL of 0.235mol / L KOH methanol solution, and keep the reaction at 60°C for 120 minutes to obtain 2.0% Cu-doped ZnO nanocrystal product;

[0048] 3) The reaction was terminated by cooling with ice water, pre-washed by methanol centrifugation for 3 times, and then the precipitate was dispersed in 20 mL of n-octylamine in an amine bath at 50 °C for 60 minutes, and the purified Cu-doped ZnO nanocrystal precipitate was obtained by centrifugation;

[0049] 4) Add 10 mL of chloroform to the abov...

Embodiment 2

[0054] 1) 0.4914g Zn(CH 3 COO) 2 , 0.0396g Co(CH 3 COO) 2 The powder was dissolved in 20mL and 10mL methanol solutions respectively, and both were refluxed in a water bath at 65°C for 120 minutes to obtain Zn(CH 3 COO) 2 and Co(CH 3 COO) 2 The precursor solution;

[0055] 2) Add 20mL of 0.4mol / L KOH methanol solution dropwise to the Zn(CH 3 COO) 2 In the precursor solution, add Co(CH 3 COO) 2 Add the precursor solution of the above solution to the above solution, after the temperature drops to 50°C, add 20mL of 0.4mol / L KOH methanol solution, and keep the reaction at 50°C for 210 minutes to obtain 6.0% Co-doped ZnO nanocrystal product;

[0056] 3) Stop the reaction by cooling with ice water, pre-wash with methanol for 5 times, then disperse the precipitate into 30 mL of n-octylamine in an amine bath at 50°C for 90 minutes, and centrifuge to obtain the purified Co-doped ZnO nanocrystal precipitate;

[0057] 4) Add 15 mL of chloroform to the nanocrystal precipitate pr...

Embodiment 3

[0062] 1) 0.4914g Zn(CH 3 COO) 2 , 0.0194g Mn(CH 3 COO) 2 The powder was dissolved in 20mL and 10mL methanol solutions respectively, and both were refluxed in a water bath at 70°C for 80 minutes to obtain Zn(CH 3 COO) 2 and Mn(CH 3COO) 2 The precursor solution;

[0063] 2) Add 20mL of 0.3mol / L KOH methanol solution dropwise to the Zn(CH 3 COO) 2 In the precursor solution, add Mn(CH 3 COO) 2 Add the precursor solution to the above solution, after the temperature drops to 50°C, add 20mL of 0.3mol / L KOH methanol solution, and keep the reaction at 50°C for 150 minutes to obtain 4.0% Mn-doped ZnO nanocrystal product;

[0064] 3) Stop the reaction by cooling with ice water, pre-wash with methanol for 5 times, then disperse the precipitate into 20 mL of n-octylamine in an amine bath at 50°C for 60 minutes, and centrifuge to obtain the purified Mn-doped ZnO nanocrystal precipitate;

[0065] 4) Add 10 mL of chloroform to the nanocrystal precipitate prepared above to fully di...

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Abstract

The invention discloses a transition metal doped ZnO-based ferromagnetic polycrystalline thin film. The material for forming the ferromagnetic polycrystalline thin film is Zn1-x(TM)xO, wherein TM is transition metal element Cu, Co or Mn; for Cu, x is more than 0 and less than 0.03; and for Co and Mn, x is more than 0 and less than 0.08. The invention also discloses a method for preparing the transition metal doped ZnO-based ferromagnetic polycrystalline thin film. The method comprises the following steps of: preparing TM doped ZnO nanocrystalline precipitate through transition metals and acetate precursor solution of zinc, dispersing and spinning to obtain the transition metal doped ZnO-based ferromagnetic polycrystalline thin film. In order to enhance the ferromagnetic stability of the polycrystalline thin film and improve the transport property, hydrogen plasma optimization treatment is performed. The method is simple in process and low in cost, the doping concentration can be adjusted in a wide range, the obtained polycrystalline thin film is dense, flat and high in adhesion property, has an obvious hysteresis loop at room temperature and can be applied to quantum spinning devices.

Description

technical field [0001] The invention relates to the field of preparation of dilute magnetic semiconductor polycrystalline thin films, in particular to a transition metal-doped ZnO-based ferromagnetic polycrystalline thin film and a preparation method thereof. Background technique [0002] Transition metal (TM) doped ZnO-based dilute magnetic semiconductor is another compound semiconductor material with high expectations from the outside world after GaAs, which has both conductivity and spin characteristics. T.Dietl et al. predict that the system will have a Curie temperature higher than room temperature, and is expected to be applied in semiconductor spin devices (T.Dietl, H.Ohno, F.Matsukura, J.Cibert, and D.Ferrand, Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors, Science, 2000(287):1019-1022). Limited to the lack of understanding of ZnO materials, numerous defect structures (mainly point defects) and the confusion of p-type doping hinder ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B28/04C30B33/04
Inventor 朱丽萍胡亮陈文丰何海平叶志镇
Owner ZHEJIANG UNIV
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