28 results about "Polycrystalline thin films" patented technology

The invention provides a perovskite pseudo-single crystal thin film and a preparation method thereof. The preparation method comprises the following steps: (1) preparing a perovskite polycrystalline thin film on a hydrophilic substrate; (2) pressing a hydrophobic substrate on the perovskite polycrystalline thin film to obtain a sandwich structure; (3) performing hot-pressing annealing treatment on the sandwich structure; and (4) after hot-pressing annealing treatment, removing the hydrophilic substrate and the hydrophobic substrate to obtain the perovskite pseudo-single crystal film. On the basis of the hot pressing technology, full diffusion, dissolution and recrystallization of crystal grains are promoted, the perovskite quasi-single crystal thin film with large crystal grains, low defects and high orientation is formed, and the method is suitable for various perovskite materials, simple in process, good in repeatability and capable of meeting the actual requirements of novel photoelectric devices.

The application discloses a P epitaxial BCD-on-SOI integration technology and a complementary bipolar transistor device. The integration steps are as follows: forming a DTI deep trench isolation region; forming an N-type side well N+ of an external collector region of a DTI deep trench full isolation NPN transistor on an insulating layer silicon; forming a P-type side well P+ of an external collector region of a DTI deep trench full isolation longitudinal PNP transistor on an insulating layer silicon; forming a complementary NPN-PNP bipolar transistor structure; completing device-metal interlayer planarization; completing a through-hole tungsten plug structure processing; sputtering an aluminum copper film layer and completing metal wire etching processing. The device comprises a P-type base silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation groove region, an N-type epitaxial layer, a P-type epitaxial layer, an N-type side well injection region, a P-type side well injection region, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug and a metal thin film layer. The application improves the speed and precision of a high-performance circuit of a P epitaxial BCD-on-SOI process.

Disclosed in the present invention is a method for manufacturing a mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design. The method comprises the steps of: 1) growing a field oxide layer above a P-type well of an analog integrated circuit; 2) depositing a polycrystalline capacitor lower electrode plate polycrystalline film layer on a field oxide layer above an N-type well, and performing matched implantation doping; 3) growing a capacitor dielectric layer; 4) depositing a polycrystalline capacitor upper electrode plate polycrystalline film layer, and manufacturing a protective film layer and a protective structure. The mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design comprises a substrate, an N-type buried layer, a P-type buried layer, an epitaxial layer, an N-type well, a P-type well, a field oxide layer, a sacrificial oxide layer, a gate oxide layer, a polycrystalline thin film layer, a silicon dioxide dielectric layer, a silicon oxynitride dielectric layer, a low-dielectric-coefficient filling film layer, a metal interconnection film layer, and a passivation layer. The present invention reduces the impact of parasitic capacitance, substrate noise and crosstalk noise, and realizes the low noise characteristic of integrated capacitors.

This invention discloses a complete set of high-current, wide-power-range, all-dielectric-isolated BCD-on-SOI integrated technology and ESD-protected VDMOS devices. The integration steps are as follows: 1) Forming an N-type buried layer and a P-type buried layer on the surface of the substrate silicon wafer. 2) Forming a DTI deep trench isolation region. 3) Forming a vertical DMOS drain-side-well N+-N-type buried layer interconnect structure. 4) Forming an insulating silicon top-side-well P+-P-type buried layer interconnect structure. 5) Forming an ESD-protected vertical DMOS device structure. 6) Completing the planarization of the device-metal inter-dielectric layer. 7) Completing the through-hole tungsten plug structure fabrication. 8) Sputtering aluminum-copper film layers and completing the metal interconnect etching process. The device includes a P-type substrate silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation trench region, an N-type epitaxial layer, a P-type epitaxial layer, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug, and a metal thin film layer. This invention solves the integration problem of high-current vertical DMOS with BCD-on-SOI process, as well as the challenge of high-density standard device integration, thereby improving the circuit reliability of the process.

The application discloses a method for preparing a high self-polarization piezoelectric performance bismuth ferrite-based film through multi-element isometric solid solution. The method comprises the following steps: configuring sols of more than three different cations which are solid-solved at B positions of bismuth ferrite, then dropping the sols on a substrate, uniformly coating the sols, solidifying, drying, pyrolyzing and annealing, repeating the dropping, uniformly coating, solidifying, drying, pyrolyzing and annealing processes, and obtaining a bismuth ferrite-based ferroelectric polycrystal film with a required thickness. The sol-gel method is adopted to prepare the multi-element isometric solid solution ferroelectric film, so that accurate component control can be realized, the growth of the material on a large-area substrate is suitable, the equipment and synthesis steps are simple, the material is saved, the cost is low, industrialized production is easy to realize, and the prepared ferroelectric polycrystal film has excellent self-polarization characteristics and a high piezoelectric coefficient, so that the ferroelectric polycrystal film has a wide application prospect in the field of electronic material technology.

The invention discloses a device for regulating and controlling grain boundary defects by an electric field and a regulation and control method thereof, the device comprises a substrate, an insulating layer, an organic semiconductor polycrystalline film and source and drain electrodes located at two sides of the same grain boundary, and the channel lengths between the electrodes are different from each other. By applying the same bias voltage to the electrode pairs with different channel lengths, a series of transverse electric fields with different intensities can be generated at the same grain boundary. By means of the electric field gradient, dynamic and in-situ regulation and control can be carried out on inherent local energy barriers and charge traps at the grain boundary, and an effective scheme is provided for preparing high-performance and high-consistency organic integrated circuits.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

This invention relates to the field of nanomaterial preparation and polycrystalline thin film preparation technology, specifically providing a method for controlling the orientation of polycrystalline thin films using antisolvents. This aims to solve the problems of existing preparation methods, such as cumbersome implementation, incompatibility with industrial production, and potential negative impacts on the integrity of the polycrystalline thin film. To this end, the method for controlling the orientation of polycrystalline thin films using antisolvents includes: coating a pre-prepared precursor solution onto a substrate; coating an antisolvent corresponding to a specific target orientation onto the substrate containing the precursor solution; and subjecting the coated substrate containing the precursor solution and antisolvent to low-temperature annealing to obtain a polycrystalline thin film with the specific target orientation. The annealing time is negatively correlated with the annealing temperature. The polycrystalline thin films prepared by the method of this invention exhibit high orientation consistency, low defect density, high carrier mobility, and a more compact and flat film morphology.

The application provides a gallium arsenide-based terahertz frequency-doubling Schottky diode and a preparation method thereof. The preparation method comprises the following steps: growing a gallium arsenide polycrystalline thin film layer on a diamond substrate, wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide; and preparing a device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer. According to the application, the gallium arsenide polycrystalline thin film layer is directly grown on the diamond substrate, and the Schottky diode is prepared on the basis, the diamond substrate replaces the gallium arsenide substrate to serve as the structural support of the Schottky diode, the process flow is simple, the production cycle is short, the reliability is high, and the heat dissipation performance of the gallium arsenide-based terahertz frequency-doubling Schottky diode is improved.

This invention discloses a surface treatment method for a semiconductor structure, comprising: providing a semiconductor structure having an isolation structure and an exposed region defined by the isolation structure; baking the semiconductor structure at a first preset temperature, the first preset temperature being configured to suppress corner rounding at the edges of the exposed region and to initially smooth the surface of the exposed region; and baking the semiconductor structure at a second preset temperature in an atmosphere containing an etching gas to remove the oxide layer on the surface of the exposed region, wherein the second preset temperature is lower than the first preset temperature. This invention effectively suppresses corner rounding at the edges of the active region and removes the native oxide layer and surface impurities. This method significantly increases the effective single-crystal platform area for subsequent epitaxial growth, reduces the base resistance of the device, and improves high-frequency radio frequency characteristics, while ensuring the continuity of polycrystalline thin film growth on the isolation structure.

The invention belongs to the technical field of diamond film preparation, and relates to a simple large-size high-quality self-supporting diamond thick film preparation method, which comprises the following steps: surface pretreatment: grinding a large-size molybdenum block by using diamond micro powder to remove surface impurities, and then carrying out plasma treatment on the surface of the large-size molybdenum block by using CVD (Chemical Vapor Deposition) equipment; carrying out CVD growth; after part of the CVD growth steps are repeated according to the required polycrystalline film thickness, under the conditions that the temperature is 850-950 DEG C, the hydrogen is 5-8 slm, and the pressure is 4.5-5.5 kpa, methane accounting for 2-3 vol% of the mixed gas is started, a nanocrystalline layer with the thickness being 0.3-1 mm grows through CVD equipment, and therefore the high-quality diamond film is prepared. The preparation method disclosed by the invention is simple and convenient, can be repeatedly used for multiple times, can reduce the use cost of the substrate in the later period, realizes high whole film rate and low thermal shock stress of the self-supporting thick film, and not only improves the quality of the diamond film.

The present application relates to the technical fields of semiconductor material preparation, and particularly relates to a preparation method of gallium nitride single wafer material, which comprises the following steps: placing a silicon carbide substrate sheet larger than a standard size in a containing groove of a graphite tray and assembling a cylindrical silicon nitride ceramic protective cover into the substrate tray to form a substrate tray; placing the substrate tray into a magnetron sputtering growth chamber to sequentially prepare a zinc-aluminum-oxygen polycrystalline thin film and an aluminum nitride polycrystalline thin film; placing the substrate tray into a high-temperature high-vacuum annealing furnace chamber to perform high-temperature high-vacuum annealing treatment; placing the substrate tray into a hydride vapor phase epitaxy reaction chamber to prepare a gallium nitride single thick film material; performing cutting, grinding and polishing processing on the peeled-off gallium nitride single thick film wafer larger than the standard size to obtain a standard-size gallium nitride single wafer material; and cleaning the peeled-off silicon carbide substrate sheet and the used cylindrical silicon nitride ceramic protective cover for reuse. The present application can realize low-stress, low-dislocation density, low-cost and high-yield preparation of the standard-size gallium nitride single wafer material.

This invention discloses a method for preparing rare-earth oxide / gallium oxide polycrystalline thin films with magnetoresistance effect. The method includes: preparing a deposition raw material, wherein the deposition raw material is a rare-earth oxide / gallium oxide composite particle with a core-shell structure, the core of which is composed of La... 1‑x Ca x TmO3 rare earth oxide precursor powder; substrate pretreatment; composite particles placed in the evaporation boat of a thermal resistance evaporation apparatus, allowing the evaporation raw material to melt and evaporate, depositing on the substrate surface to form a wet film; finally, flash calcination under oxygen-rich conditions of 50%~95% to obtain a polycrystalline thin film. This invention uses a single core-shell structure composite particle as the evaporation source, achieving synergistic evaporation of rare earth oxides and gallium oxide, solving the problems of component fractionation of multi-component materials and evaporation source explosion and splashing. The resulting thin film has high crystal quality and significant magnetoresistance effect, and the equipment is simple, low-cost, and conducive to large-scale production.

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

The application discloses a method for improving stability of a lead halide perovskite thin film and a product, and the method comprises the following steps: covering an alcohol solution of a polymerizable acrylic small molecule on a crystallized perovskite polycrystalline thin film, and passivating surface defects of the perovskite through a light curing mode at room temperature, so as to improve hydrophobicity of the perovskite thin film and further improve performance and stability of a device; the structure of the polymerizable acrylic small molecule is [CH2=CHCOO] n R, R is a single or multiple groups of phenyl, a saturated alkyl chain, a methoxy group, a carbonyl group, a nitrile group, a carboxyl group, an aldehyde group and a hydroxyl group in any combination, the method of the application can obviously improve hydrophobicity of the perovskite thin film, repair surface defects of the perovskite thin film, improve performance and stability of a perovskite solar cell, and has the advantages of simple process, low requirement on equipment, high stability and repeatability, good universality, low dependence on environment and low cost.

There is provided a piezoelectric film, being a polycrystalline film comprised of potassium sodium niobate; containing at least one metal element selected from a group consisting of Cu and Mn; and having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals, with respect to a concentration A of the metal element in a matrix phase of the crystals.

The invention relates to the technical field of ultraviolet detectors, in particular to a self-driven wide bandgap perovskite ultraviolet detector and a preparation method thereof. The ultraviolet detector comprises an FTO conductive glass substrate, a TPPO-doped CsPbCl3-xBrx perovskite polycrystalline thin film deposited on the FTO conductive glass substrate, and a carbon electrode layer formed on the perovskite polycrystalline thin film, the perovskite polycrystalline thin film is formed by a PbCl2 precursor layer, a TPPO doping layer, a CsBr layer and a CsCl layer which are deposited through thermal evaporation in sequence under high-temperature annealing reaction. Wherein 0.5 < = x < = 1. The organic TPPO molecules are doped into the all-inorganic CsPbCl3-xBrx perovskite by adopting a vapor deposition technology to realize an efficient defect passivation effect, so that the non-radiative recombination loss of the device is reduced, and the production cost of the device is remarkably reduced while the ultraviolet detection performance and the stability of the device are effectively improved.

The application discloses a preparation method of a carbon nanotube / perovskite composite structure cold cathode. First, carbon nanotube slurry is prepared through an audio frequency resonance technology, then the dispersed slurry is transferred to a preprocessed conductive substrate through a patterning process to obtain a carbon nanotube array structure. Then, an inorganic cesium lead halide perovskite polycrystalline thin film is prepared on the carbon nanotube array structure by using a continuous vapor deposition method, so that a carbon nanotube / perovskite composite structure cold cathode emitter with a lower work function is obtained, and the field emission performance is greatly improved. The cold cathode slurry is prepared through the audio frequency resonance technology, and the carbon nanotube / perovskite composite structure cold cathode is prepared by combining the continuous vapor deposition technology, so that a low-cost, high-efficiency and high-performance cold cathode emitter preparation method is provided.

The application provides a method, device and equipment for determining the intrinsic band gap width of a thin film dielectric material, wherein the method comprises: performing ellipsometry on a single crystal or polycrystalline thin film dielectric material to be measured to obtain ellipsometry parameters; generating ellipsometry simulation parameters based on a pre-constructed measurement model; generating a spectral absorption dispersion curve through iteration and fitting according to the ellipsometry parameters and the ellipsometry simulation parameters; performing Gaussian function peak separation fitting processing based on the spectral absorption dispersion curve to obtain peak separation fitting Gaussian function parameters and a reference dispersion curve; extracting target fitting Gaussian function parameters and a target reference dispersion curve corresponding to a characteristic absorption peak of the thin film dielectric material, and performing normalization and linear extrapolation to determine the intrinsic band gap width of the thin film dielectric material. The intrinsic band gap width of the single crystal or polycrystalline thin film dielectric material to be measured is determined through normalization and linear extrapolation of the target fitting Gaussian function parameters and the target reference dispersion curve.

The application belongs to the technical field of photovoltaic materials and devices, and particularly relates to a perovskite solar cell and a preparation method thereof. x Br 3‑x , wherein x is 1-3, the hole transport layer comprises a nickel oxide layer, and the electron transport layer comprises, from bottom to top, a niobium pentoxide layer, a C 60 layer, and a BCP layer. The application is conducive to obtaining a high-quality perovskite polycrystalline thin film, matching the energy levels of the hole transport layer and the electron transport layer with the perovskite light absorption layer, and facilitating the extraction and transport of photo-generated carriers.

To provide a semiconductor device using diamond semiconductors that is suitable for low-loss, high-current, high-speed, and high-voltage operation, as well as for miniaturization and weight reduction of devices. [Solution] In the semiconductor device 101, a film (HEA film) 13 made of a high electron affinity material is formed in contact with at least a part of the surface of the diamond semiconductor 11. The high electron affinity material is a material in which the lower end of the conduction band at the interface between the diamond semiconductor and the HEA film is energetically lower than the upper end of the valence band of the diamond semiconductor at the interface, and the HEA film has a structure in which it is made of a single crystal or polycrystalline film in at least some locations.

A method for producing a polycrystalline silicon carbide film is provided with which the efficiency of producing a polycrystalline silicon carbide film can be improved.　The method for producing a polycrystalline silicon carbide film includes a second film deposition step, in which a second polycrystalline silicon carbide film is deposited, in a predetermined position in a film deposition device, on a second supporting substrate that has a film deposition surface having an amount of curvature regulated on the basis of the amount of surface warpage of a first polycrystalline silicon carbide film, the first polycrystalline silicon carbide film being obtained by film deposition, in the predetermined position, on a film deposition surface of a first supporting substrate, said film deposition surface having the amount of curvature thereof determined in advance.

The application discloses an electronic device structure based on the weak connection characteristics of grain boundaries and a preparation method thereof, and belongs to the field of electronic information materials and components.The electronic device structure comprises a first electrode region connected with one end of a high-resistance region and a second electrode region connected with the other end of the high-resistance region; at least one of the first electrode region and the second electrode region is connected to the high-resistance region through a low-resistance region; the low-resistance region, the high-resistance region, the first electrode region and the second electrode region are all composed of YBCO films with oblique orientation; the grain boundary direction of the YBCO film in the high-resistance region is the same as that of the YBCO film in the low-resistance region; the axis of the high-resistance region is perpendicular to the grain boundary of the YBCO film, and the axis of the low-resistance region is parallel to the grain boundary of the YBCO film; and the first electrode region and the second electrode region are both provided with electrodes.The application realizes effective control of the grain boundary characteristics of polycrystalline films by growing the oblique orientation films of fibrous grains starting from the control of film growth.

The application relates to a preparation method of a large-area perovskite microcrystalline thin film and an X-ray detector. The method comprises the following steps: 1) firstly, a polycrystalline perovskite precursor solution is coated on a hole transport material modified conductive substrate by using a doctor blade method, and a nano-thickness large-area perovskite polycrystalline thin film is obtained through annealing treatment; 2) combining a reverse temperature crystallization method, the perovskite polycrystalline thin film obtained in the step 1) is introduced into a perovskite saturated growth solution as a growth template to induce growth of a large-area microcrystalline thin film, and the size of the polycrystalline thin film determines the size of the microcrystalline thin film; and 3) an isostatic pressing and hot pressing process is adopted to perform flattening treatment on the surface of the microcrystalline thin film. The method can overcome the problems of a traditional bulk perovskite single crystal, such as too large longitudinal thickness and limited lateral size, and the problems of a polycrystalline perovskite thin film, such as small grain size and large defect density, and the sensitivity of a device to X-ray detection is significantly improved.

The invention belongs to the technical field of ultraviolet radiation meters, and particularly discloses a real-time ultraviolet radiation monitor based on a narrow-band photoelectric detector, the ultraviolet radiation monitor comprises an ultraviolet sensing module, a signal processing module and a display module, the ultraviolet sensing module comprises a self-powered ultraviolet narrow-band photoelectric detector, and the signal processing module comprises a signal processing module and a display module. The self-powered ultraviolet narrow-band photoelectric detector comprises a transmission layer, an absorption layer and a first contact electrode which are sequentially arranged from bottom to top, and the transmission layer is further provided with a second contact electrode. The transmission layer is a wide bandgap semiconductor with an absorption cut-off edge of 350-400 nanometers, and the absorption layer is an all-inorganic copper halide polycrystalline thin film, an all-inorganic copper halide pseudo-single crystal thin film or an all-inorganic copper halide micron wire with an absorption cut-off edge of 280-320 nanometers. The problems that an existing ultraviolet radiation monitor is high in price, needs to be matched with an additional optical filter, is large in size and the like are solved.

This application relates to a large-area perovskite luminescent polycrystalline thin film backlight module and its fabrication method, as well as an LCD backlight module, comprising the following steps: preparing green and red perovskite precursor solutions; preparing spacer layer precursor solutions; preparing green perovskite polycrystalline thin films by a blade coating method and post-processing; preparing spacer layers by a blade coating method; preparing red perovskite polycrystalline thin films by a blade coating method and post-processing; encapsulating with a water-oxygen barrier film; and assembling the LCD backlight module. This application can fabricate dual-color stacked large-area perovskite luminescent polycrystalline thin films, which, when applied to LCD backlight structures, offer advantages such as low cost and high color gamut.

The invention provides a perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite solar cell comprises a transparent conductive substrate, a bottom charge transport layer, a perovskite light absorption layer, a top charge transport layer and a top metal electrode which are sequentially stacked, the perovskite light absorption layer is prepared from a perovskite precursor solution, and the perovskite precursor solution contains a wide-temperature-range mobile phase additive. According to the invention, the wide-temperature-range mobile phase additive is introduced into the perovskite precursor solution, the crystal boundary of the prepared perovskite polycrystalline film can maintain liquid fluidity in a wide temperature window, dynamic self-adaptive regulation and control can be realized, the photoluminescence stability of the perovskite film is greatly improved, and the performance of the perovskite film is improved. And a good PL retention rate is still achieved after three cold and heat cycle periods. The stability of the prepared perovskite solar cell is greatly improved, and 92.3% of the initial photoelectric conversion efficiency is still maintained after 200 cold and hot cycle periods.