41 results about "Polycrystalline thin films" patented technology

The invention provides a perovskite pseudo-single crystal thin film and a preparation method thereof. The preparation method comprises the following steps: (1) preparing a perovskite polycrystalline thin film on a hydrophilic substrate; (2) pressing a hydrophobic substrate on the perovskite polycrystalline thin film to obtain a sandwich structure; (3) performing hot-pressing annealing treatment on the sandwich structure; and (4) after hot-pressing annealing treatment, removing the hydrophilic substrate and the hydrophobic substrate to obtain the perovskite pseudo-single crystal film. On the basis of the hot pressing technology, full diffusion, dissolution and recrystallization of crystal grains are promoted, the perovskite quasi-single crystal thin film with large crystal grains, low defects and high orientation is formed, and the method is suitable for various perovskite materials, simple in process, good in repeatability and capable of meeting the actual requirements of novel photoelectric devices.

The invention belongs to the technical field of perovskite materials, and particularly relates to application of triazole formamide, a perovskite precursor solution and a preparation method and application of the perovskite precursor solution, triazole formamide serves as an additive to be added into perovskite, and triazole formamide is 1, 2, 4 triazole-3-formamide. According to the method, the homogenization of the large-area film is realized and the defects in the perovskite polycrystalline film are effectively passivated in the nucleation and crystallization process in the process of preparing the large-area perovskite polycrystalline film by using the small-molecule triazole formamide as the multi-active-site additive regulation and control solution method; therefore, the photoelectric conversion efficiency and the stability of the perovskite photovoltaic miniature module are improved.

The application discloses a P epitaxial BCD-on-SOI integration technology and a complementary bipolar transistor device. The integration steps are as follows: forming a DTI deep trench isolation region; forming an N-type side well N+ of an external collector region of a DTI deep trench full isolation NPN transistor on an insulating layer silicon; forming a P-type side well P+ of an external collector region of a DTI deep trench full isolation longitudinal PNP transistor on an insulating layer silicon; forming a complementary NPN-PNP bipolar transistor structure; completing device-metal interlayer planarization; completing a through-hole tungsten plug structure processing; sputtering an aluminum copper film layer and completing metal wire etching processing. The device comprises a P-type base silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation groove region, an N-type epitaxial layer, a P-type epitaxial layer, an N-type side well injection region, a P-type side well injection region, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug and a metal thin film layer. The application improves the speed and precision of a high-performance circuit of a P epitaxial BCD-on-SOI process.

Disclosed in the present invention is a method for manufacturing a mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design. The method comprises the steps of: 1) growing a field oxide layer above a P-type well of an analog integrated circuit; 2) depositing a polycrystalline capacitor lower electrode plate polycrystalline film layer on a field oxide layer above an N-type well, and performing matched implantation doping; 3) growing a capacitor dielectric layer; 4) depositing a polycrystalline capacitor upper electrode plate polycrystalline film layer, and manufacturing a protective film layer and a protective structure. The mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design comprises a substrate, an N-type buried layer, a P-type buried layer, an epitaxial layer, an N-type well, a P-type well, a field oxide layer, a sacrificial oxide layer, a gate oxide layer, a polycrystalline thin film layer, a silicon dioxide dielectric layer, a silicon oxynitride dielectric layer, a low-dielectric-coefficient filling film layer, a metal interconnection film layer, and a passivation layer. The present invention reduces the impact of parasitic capacitance, substrate noise and crosstalk noise, and realizes the low noise characteristic of integrated capacitors.

This invention discloses a complete set of high-current, wide-power-range, all-dielectric-isolated BCD-on-SOI integrated technology and ESD-protected VDMOS devices. The integration steps are as follows: 1) Forming an N-type buried layer and a P-type buried layer on the surface of the substrate silicon wafer. 2) Forming a DTI deep trench isolation region. 3) Forming a vertical DMOS drain-side-well N+-N-type buried layer interconnect structure. 4) Forming an insulating silicon top-side-well P+-P-type buried layer interconnect structure. 5) Forming an ESD-protected vertical DMOS device structure. 6) Completing the planarization of the device-metal inter-dielectric layer. 7) Completing the through-hole tungsten plug structure fabrication. 8) Sputtering aluminum-copper film layers and completing the metal interconnect etching process. The device includes a P-type substrate silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation trench region, an N-type epitaxial layer, a P-type epitaxial layer, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug, and a metal thin film layer. This invention solves the integration problem of high-current vertical DMOS with BCD-on-SOI process, as well as the challenge of high-density standard device integration, thereby improving the circuit reliability of the process.

The application discloses a method for preparing a high self-polarization piezoelectric performance bismuth ferrite-based film through multi-element isometric solid solution. The method comprises the following steps: configuring sols of more than three different cations which are solid-solved at B positions of bismuth ferrite, then dropping the sols on a substrate, uniformly coating the sols, solidifying, drying, pyrolyzing and annealing, repeating the dropping, uniformly coating, solidifying, drying, pyrolyzing and annealing processes, and obtaining a bismuth ferrite-based ferroelectric polycrystal film with a required thickness. The sol-gel method is adopted to prepare the multi-element isometric solid solution ferroelectric film, so that accurate component control can be realized, the growth of the material on a large-area substrate is suitable, the equipment and synthesis steps are simple, the material is saved, the cost is low, industrialized production is easy to realize, and the prepared ferroelectric polycrystal film has excellent self-polarization characteristics and a high piezoelectric coefficient, so that the ferroelectric polycrystal film has a wide application prospect in the field of electronic material technology.

The invention discloses a device for regulating and controlling grain boundary defects by an electric field and a regulation and control method thereof, the device comprises a substrate, an insulating layer, an organic semiconductor polycrystalline film and source and drain electrodes located at two sides of the same grain boundary, and the channel lengths between the electrodes are different from each other. By applying the same bias voltage to the electrode pairs with different channel lengths, a series of transverse electric fields with different intensities can be generated at the same grain boundary. By means of the electric field gradient, dynamic and in-situ regulation and control can be carried out on inherent local energy barriers and charge traps at the grain boundary, and an effective scheme is provided for preparing high-performance and high-consistency organic integrated circuits.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

The invention belongs to the technical field of diamond cultivation, and discloses a bias nucleation high-orientation polycrystalline film preparation method and system, a terminal and a storage medium, the method comprises the following steps: determining a target substrate, and performing bias voltage setting on the target substrate to obtain a substrate with bias voltage; constructing a sample molybdenum table, and generating a target substrate surface temperature according to the substrate with the bias voltage and the sample molybdenum table; determining a target polycrystal, and performing bias nucleation treatment on the target polycrystal according to the target substrate surface temperature to obtain a target crystal; and performing growth orientation control and film generation treatment on the target crystal to obtain the high-orientation polycrystalline film. According to the method, the bias voltage is set for the substrate, and the sample molybdenum table is constructed, so that the temperature condition required by diamond in-situ nucleation can be met, and meanwhile, the growth efficiency of the high-orientation polycrystalline film is effectively improved by controlling the growth orientation of the target polycrystalline.

This invention relates to the field of nanomaterial preparation and polycrystalline thin film preparation technology, specifically providing a method for controlling the orientation of polycrystalline thin films using antisolvents. This aims to solve the problems of existing preparation methods, such as cumbersome implementation, incompatibility with industrial production, and potential negative impacts on the integrity of the polycrystalline thin film. To this end, the method for controlling the orientation of polycrystalline thin films using antisolvents includes: coating a pre-prepared precursor solution onto a substrate; coating an antisolvent corresponding to a specific target orientation onto the substrate containing the precursor solution; and subjecting the coated substrate containing the precursor solution and antisolvent to low-temperature annealing to obtain a polycrystalline thin film with the specific target orientation. The annealing time is negatively correlated with the annealing temperature. The polycrystalline thin films prepared by the method of this invention exhibit high orientation consistency, low defect density, high carrier mobility, and a more compact and flat film morphology.

The invention discloses an annular waveguide electron cyclotron resonance plasma chemical vapor deposition device, and belongs to the field of microwave plasma method chemical vapor deposition. The device comprises a microwave power supply, a rectangular waveguide, a three-pin tuner, a short-circuit piston, an annular waveguide, an annular quartz window, a tungsten bias electrode, a cylindrical microwave resonant cavity, a temperature measurement observation window, an air inlet, an air outlet, a liftable substrate table tuning structure and a magnetic field system. The annular waveguide is combined with the cylindrical microwave resonant cavity, so that the axial symmetrical distribution of microwave energy can be realized, and the uniformity of the plasma is improved. The magnetic field system adopts double-layer magnetic field regulation and control, and the integral magnetic field and the plasma uniformity are optimized by independently adjusting the magnetic induction intensity. The pulsed bias power supply provides bias voltage for the substrate, and uniformity of the diamond in nucleation and growth on the heterogeneous substrate is promoted. The device is mainly used for preparing large-size heteroepitaxial single crystal diamond and polycrystalline diamond films, and high-quality uniform deposition of large-area diamond single crystal or polycrystalline films can be realized.

The application provides a gallium arsenide-based terahertz frequency-doubling Schottky diode and a preparation method thereof. The preparation method comprises the following steps: growing a gallium arsenide polycrystalline thin film layer on a diamond substrate, wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide; and preparing a device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer. According to the application, the gallium arsenide polycrystalline thin film layer is directly grown on the diamond substrate, and the Schottky diode is prepared on the basis, the diamond substrate replaces the gallium arsenide substrate to serve as the structural support of the Schottky diode, the process flow is simple, the production cycle is short, the reliability is high, and the heat dissipation performance of the gallium arsenide-based terahertz frequency-doubling Schottky diode is improved.

The invention provides a reversible chiral regulation type circular polarization laser device and a preparation method and application thereof. The reversible chiral regulation type circular polarization laser device structurally comprises a lower substrate, a light modulation layer, an upper substrate, an isolation layer and a gain medium layer from bottom to top in sequence. According to the reversible chiral regulation and control type circular polarization laser device, cholesteric liquid crystal doped with a light-controlled molecular motor is used as a light modulation layer, an organic-inorganic mixed perovskite polycrystalline film is used as a light gain medium, amplified spontaneous emission gain is generated through laser pumping of the perovskite polycrystalline film, and through light modulation of CLC, the light gain of the light modulation layer is improved. Therefore, high-performance circular polarization laser is emitted. Under the irradiation of ultraviolet light, cis-trans isomerization occurs to the light-controlled molecular motor, so that CLC chirality is reversed, and the circular polarization asymmetry factor of emergent laser is up to-1.38-1.22. By adjusting the ultraviolet light power and replacing the perovskite polycrystalline thin film with different halogen components, the laser device can realize multi-color, different-chirality and high-circular-polarization-degree laser emission.

This invention discloses a surface treatment method for a semiconductor structure, comprising: providing a semiconductor structure having an isolation structure and an exposed region defined by the isolation structure; baking the semiconductor structure at a first preset temperature, the first preset temperature being configured to suppress corner rounding at the edges of the exposed region and to initially smooth the surface of the exposed region; and baking the semiconductor structure at a second preset temperature in an atmosphere containing an etching gas to remove the oxide layer on the surface of the exposed region, wherein the second preset temperature is lower than the first preset temperature. This invention effectively suppresses corner rounding at the edges of the active region and removes the native oxide layer and surface impurities. This method significantly increases the effective single-crystal platform area for subsequent epitaxial growth, reduces the base resistance of the device, and improves high-frequency radio frequency characteristics, while ensuring the continuity of polycrystalline thin film growth on the isolation structure.

The invention belongs to the technical field of diamond film preparation, and relates to a simple large-size high-quality self-supporting diamond thick film preparation method, which comprises the following steps: surface pretreatment: grinding a large-size molybdenum block by using diamond micro powder to remove surface impurities, and then carrying out plasma treatment on the surface of the large-size molybdenum block by using CVD (Chemical Vapor Deposition) equipment; carrying out CVD growth; after part of the CVD growth steps are repeated according to the required polycrystalline film thickness, under the conditions that the temperature is 850-950 DEG C, the hydrogen is 5-8 slm, and the pressure is 4.5-5.5 kpa, methane accounting for 2-3 vol% of the mixed gas is started, a nanocrystalline layer with the thickness being 0.3-1 mm grows through CVD equipment, and therefore the high-quality diamond film is prepared. The preparation method disclosed by the invention is simple and convenient, can be repeatedly used for multiple times, can reduce the use cost of the substrate in the later period, realizes high whole film rate and low thermal shock stress of the self-supporting thick film, and not only improves the quality of the diamond film.

The invention discloses a soft X-ray detector and a manufacturing method thereof. The soft X-ray detector sequentially comprises a bottom electrode, a first electrode and a second electrode from bottom to top, an electron transport layer; the perovskite layer is a perovskite polycrystalline thin film and is suitable for responding to soft X-rays to output electric signals; the two-dimensional perovskite passivation layer is made of a two-dimensional perovskite thin film, the two-dimensional perovskite thin film has an amino group, and the amino group is suitable for passivating defects on the surface of the perovskite layer; a hole transport layer; and a top electrode. By forming the two-dimensional perovskite passivation layer on the perovskite layer, defects on the surface of the perovskite layer can be effectively passivated, recombination of photon-generated carriers can be reduced, the quantum efficiency of the device can be improved, the dark current of the device can be reduced, and effective detection of soft X-rays can be realized.

The present application relates to the technical fields of semiconductor material preparation, and particularly relates to a preparation method of gallium nitride single wafer material, which comprises the following steps: placing a silicon carbide substrate sheet larger than a standard size in a containing groove of a graphite tray and assembling a cylindrical silicon nitride ceramic protective cover into the substrate tray to form a substrate tray; placing the substrate tray into a magnetron sputtering growth chamber to sequentially prepare a zinc-aluminum-oxygen polycrystalline thin film and an aluminum nitride polycrystalline thin film; placing the substrate tray into a high-temperature high-vacuum annealing furnace chamber to perform high-temperature high-vacuum annealing treatment; placing the substrate tray into a hydride vapor phase epitaxy reaction chamber to prepare a gallium nitride single thick film material; performing cutting, grinding and polishing processing on the peeled-off gallium nitride single thick film wafer larger than the standard size to obtain a standard-size gallium nitride single wafer material; and cleaning the peeled-off silicon carbide substrate sheet and the used cylindrical silicon nitride ceramic protective cover for reuse. The present application can realize low-stress, low-dislocation density, low-cost and high-yield preparation of the standard-size gallium nitride single wafer material.

This invention discloses a method for preparing rare-earth oxide / gallium oxide polycrystalline thin films with magnetoresistance effect. The method includes: preparing a deposition raw material, wherein the deposition raw material is a rare-earth oxide / gallium oxide composite particle with a core-shell structure, the core of which is composed of La... 1‑x Ca x TmO3 rare earth oxide precursor powder; substrate pretreatment; composite particles placed in the evaporation boat of a thermal resistance evaporation apparatus, allowing the evaporation raw material to melt and evaporate, depositing on the substrate surface to form a wet film; finally, flash calcination under oxygen-rich conditions of 50%~95% to obtain a polycrystalline thin film. This invention uses a single core-shell structure composite particle as the evaporation source, achieving synergistic evaporation of rare earth oxides and gallium oxide, solving the problems of component fractionation of multi-component materials and evaporation source explosion and splashing. The resulting thin film has high crystal quality and significant magnetoresistance effect, and the equipment is simple, low-cost, and conducive to large-scale production.

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

The application discloses a method for improving stability of a lead halide perovskite thin film and a product, and the method comprises the following steps: covering an alcohol solution of a polymerizable acrylic small molecule on a crystallized perovskite polycrystalline thin film, and passivating surface defects of the perovskite through a light curing mode at room temperature, so as to improve hydrophobicity of the perovskite thin film and further improve performance and stability of a device; the structure of the polymerizable acrylic small molecule is [CH2=CHCOO] n R, R is a single or multiple groups of phenyl, a saturated alkyl chain, a methoxy group, a carbonyl group, a nitrile group, a carboxyl group, an aldehyde group and a hydroxyl group in any combination, the method of the application can obviously improve hydrophobicity of the perovskite thin film, repair surface defects of the perovskite thin film, improve performance and stability of a perovskite solar cell, and has the advantages of simple process, low requirement on equipment, high stability and repeatability, good universality, low dependence on environment and low cost.

The invention belongs to the technical field of film preparation, and provides a LuNxHy film and a preparation method thereof. The preparation method comprises the following steps: by taking Lu metal as a target material and argon-nitrogen mixed gas as reaction gas, depositing a LuNx film on a substrate through reactive sputtering; and carrying out heat treatment on the LuNx film in a hydrogen-containing atmosphere, the LuNxHy thin film is a single-crystal or polycrystalline thin film; in the film, 0 < x < 1, and y > 1. The invention further discloses the LuNxHy thin film prepared according to the method. The LuNxHy film with stable structure and property is prepared through a two-step method, and the method is simple in preparation, low in cost and suitable for large-scale production. The thin film can stably exist at normal temperature and normal pressure and can be a single-crystal or polycrystalline thin film, and the problem that a single-crystal thin film cannot be prepared in the prior art is solved. When the LuNx film is prepared, the nitrogen doping amount can be accurately, uniformly and repeatedly controlled, and the LuNx film is stable at normal temperature and normal pressure.

There is provided a piezoelectric film, being a polycrystalline film comprised of potassium sodium niobate; containing at least one metal element selected from a group consisting of Cu and Mn; and having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals, with respect to a concentration A of the metal element in a matrix phase of the crystals.

The invention relates to the technical field of ultraviolet detectors, in particular to a self-driven wide bandgap perovskite ultraviolet detector and a preparation method thereof. The ultraviolet detector comprises an FTO conductive glass substrate, a TPPO-doped CsPbCl3-xBrx perovskite polycrystalline thin film deposited on the FTO conductive glass substrate, and a carbon electrode layer formed on the perovskite polycrystalline thin film, the perovskite polycrystalline thin film is formed by a PbCl2 precursor layer, a TPPO doping layer, a CsBr layer and a CsCl layer which are deposited through thermal evaporation in sequence under high-temperature annealing reaction. Wherein 0.5 < = x < = 1. The organic TPPO molecules are doped into the all-inorganic CsPbCl3-xBrx perovskite by adopting a vapor deposition technology to realize an efficient defect passivation effect, so that the non-radiative recombination loss of the device is reduced, and the production cost of the device is remarkably reduced while the ultraviolet detection performance and the stability of the device are effectively improved.

A method for processing the inner surface of a medium-wave infrared focal plane detector cold shield relates to the field of infrared photoelectric detector manufacturing and specifically comprises the following steps: cleaning the machined surface of the detector cold shield and covering the portion of the cold shield surface that does not require blackening with aluminum foil; vapor-depositing an InSb film as a base layer onto the inner surface of the detector cold shield, increasing the partial pressure of Ar gas in a vacuum chamber during vapor deposition, and then covering the inner surface of the detector cold shield with the InSb film again to complete the preparation of the InSb film; preparing a ZnS film on the exterior of the InSb film by ion vapor deposition; after the ion vapor deposition is completed, filling the vacuum chamber with Ar gas, and performing high-temperature baking and annealing on the cold shield; the InSb polycrystalline film prepared by the present invention has a strong film / substrate bonding strength, i.e., adhesion, and is not easy to fall off, thereby achieving good surface coverage; and covering the surface of the InSb polycrystalline film with a layer of ZnS anti-reflection film by ion vapor deposition to ensure that the InSb film has a high absorptivity of incident medium-wave infrared light.

The application discloses a preparation method of a carbon nanotube / perovskite composite structure cold cathode. First, carbon nanotube slurry is prepared through an audio frequency resonance technology, then the dispersed slurry is transferred to a preprocessed conductive substrate through a patterning process to obtain a carbon nanotube array structure. Then, an inorganic cesium lead halide perovskite polycrystalline thin film is prepared on the carbon nanotube array structure by using a continuous vapor deposition method, so that a carbon nanotube / perovskite composite structure cold cathode emitter with a lower work function is obtained, and the field emission performance is greatly improved. The cold cathode slurry is prepared through the audio frequency resonance technology, and the carbon nanotube / perovskite composite structure cold cathode is prepared by combining the continuous vapor deposition technology, so that a low-cost, high-efficiency and high-performance cold cathode emitter preparation method is provided.

The invention discloses a high-brightness lead-free double-perovskite white light diode device and a preparation method thereof, two lead-free double-perovskite crystals (PMA) 4NaInCl8: Sb and Cs2NaInCl6: Sb are adopted to prepare a lead-free double-perovskite polycrystalline film in the diode device, and co-crystallization and white light emission regulation and control of double-phase perovskite are realized by accurately regulating and controlling the component proportion and the annealing temperature. The prepared composite material shows an excellent white light emission characteristic and is successfully applied to an electroluminescent device, the maximum brightness of the device can reach 2040cd m <-2 >, and the high-brightness white light output performance of the device is equivalent to the optimal performance of an existing lead-free double-perovskite white light diode. According to the technology, the toxicity problem and the instability defect of traditional lead-based perovskite are effectively solved through the dual-phase synergistic energy funnel effect (the interface potential gradient delta V is approximately equal to 250 mV), and a new thought is provided for development of environment-friendly photoelectric display devices.

The application provides a method, device and equipment for determining the intrinsic band gap width of a thin film dielectric material, wherein the method comprises: performing ellipsometry on a single crystal or polycrystalline thin film dielectric material to be measured to obtain ellipsometry parameters; generating ellipsometry simulation parameters based on a pre-constructed measurement model; generating a spectral absorption dispersion curve through iteration and fitting according to the ellipsometry parameters and the ellipsometry simulation parameters; performing Gaussian function peak separation fitting processing based on the spectral absorption dispersion curve to obtain peak separation fitting Gaussian function parameters and a reference dispersion curve; extracting target fitting Gaussian function parameters and a target reference dispersion curve corresponding to a characteristic absorption peak of the thin film dielectric material, and performing normalization and linear extrapolation to determine the intrinsic band gap width of the thin film dielectric material. The intrinsic band gap width of the single crystal or polycrystalline thin film dielectric material to be measured is determined through normalization and linear extrapolation of the target fitting Gaussian function parameters and the target reference dispersion curve.

The application belongs to the technical field of photovoltaic materials and devices, and particularly relates to a perovskite solar cell and a preparation method thereof. x Br 3‑x , wherein x is 1-3, the hole transport layer comprises a nickel oxide layer, and the electron transport layer comprises, from bottom to top, a niobium pentoxide layer, a C 60 layer, and a BCP layer. The application is conducive to obtaining a high-quality perovskite polycrystalline thin film, matching the energy levels of the hole transport layer and the electron transport layer with the perovskite light absorption layer, and facilitating the extraction and transport of photo-generated carriers.

To provide a semiconductor device using diamond semiconductors that is suitable for low-loss, high-current, high-speed, and high-voltage operation, as well as for miniaturization and weight reduction of devices. [Solution] In the semiconductor device 101, a film (HEA film) 13 made of a high electron affinity material is formed in contact with at least a part of the surface of the diamond semiconductor 11. The high electron affinity material is a material in which the lower end of the conduction band at the interface between the diamond semiconductor and the HEA film is energetically lower than the upper end of the valence band of the diamond semiconductor at the interface, and the HEA film has a structure in which it is made of a single crystal or polycrystalline film in at least some locations.