64 results about "Polycrystalline thin films" patented technology

The invention provides a perovskite pseudo-single crystal thin film and a preparation method thereof. The preparation method comprises the following steps: (1) preparing a perovskite polycrystalline thin film on a hydrophilic substrate; (2) pressing a hydrophobic substrate on the perovskite polycrystalline thin film to obtain a sandwich structure; (3) performing hot-pressing annealing treatment on the sandwich structure; and (4) after hot-pressing annealing treatment, removing the hydrophilic substrate and the hydrophobic substrate to obtain the perovskite pseudo-single crystal film. On the basis of the hot pressing technology, full diffusion, dissolution and recrystallization of crystal grains are promoted, the perovskite quasi-single crystal thin film with large crystal grains, low defects and high orientation is formed, and the method is suitable for various perovskite materials, simple in process, good in repeatability and capable of meeting the actual requirements of novel photoelectric devices.

The invention relates to the technical field of semiconductor material preparation, in particular to a gallium nitride single crystal wafer material preparation method which comprises the following steps: placing a silicon carbide substrate slice larger than a standard size in an accommodating groove of a graphite tray, and installing a cylindrical silicon nitride ceramic protective cover to assemble a substrate tray; putting the substrate tray into a magnetron sputtering growth chamber to prepare a zinc-aluminum-oxygen polycrystalline thin film and an aluminum nitride polycrystalline thin film in sequence; the substrate tray is placed in a high-temperature and high-vacuum annealing furnace chamber for high-temperature and high-vacuum annealing treatment, and the substrate tray is placed in a hydride vapor phase epitaxy reaction chamber for preparing the gallium nitride single crystal thick film material; cutting, grinding and polishing the peeled gallium nitride single crystal thick film wafer with the size larger than the standard size to obtain a gallium nitride single crystal wafer material with the standard size; and the stripped silicon carbide substrate slice and the used cylindrical silicon nitride ceramic protective cover can be repeatedly used after being cleaned. According to the method, low-stress, low-dislocation-density, low-cost and high-yield preparation of the standard-size gallium nitride single crystal wafer material can be realized.

The invention belongs to the technical field of perovskite materials, and particularly relates to application of triazole formamide, a perovskite precursor solution and a preparation method and application of the perovskite precursor solution, triazole formamide serves as an additive to be added into perovskite, and triazole formamide is 1, 2, 4 triazole-3-formamide. According to the method, the homogenization of the large-area film is realized and the defects in the perovskite polycrystalline film are effectively passivated in the nucleation and crystallization process in the process of preparing the large-area perovskite polycrystalline film by using the small-molecule triazole formamide as the multi-active-site additive regulation and control solution method; therefore, the photoelectric conversion efficiency and the stability of the perovskite photovoltaic miniature module are improved.

The present invention relates to the technical field of perovskite crystal surface treatment, and particularly to a spatial selective passivation device and method for perovskite polycrystalline thin films. The device includes a laser, a beam adjustment unit, and a three-dimensional moving platform; the beam adjustment unit includes a first aperture diaphragm, an attenuator, a second aperture diaphragm, a chopper, and a cylindrical lens arranged coaxially in sequence; the first and second aperture diaphragms are arranged in the output direction of the laser; the chopper is used to modulate the laser waveform to form a periodically distributed light field; the laser emits a laser beam, which enters the first aperture diaphragm for collimation, and then the laser power is controlled by the attenuator. After being collimated by the second aperture diaphragm, the waveform is modulated by the chopper, and then focused on the perovskite polycrystalline thin film sample through the cylindrical lens to achieve surface passivation. The advantages are as follows: the chopper regulates the laser waveform, generates the laser pulse beat frequency effect, produces a periodically distributed light field on the thin film surface, and realizes the passivation of two typical deep and shallow energy level defects in perovskite.

The invention discloses a low-temperature PS preparation method of a height-controllable all-inorganic perovskite thin film array, and belongs to the technical field of all-inorganic perovskite polycrystalline thin film array growth. The method comprises the following steps of: covering a layer of photoresist with a target array pattern on a substrate through a photoetching method; vertically placing the substrate in a tubular furnace, and keeping a distance from the substrate to the quartz boat filled with the PbI2 medicine; cleaning with acetone to remove the photoresist covering the surface of the substrate to obtain a patterned PbI2 film array; and spin-coating a methanol solution of CsBr added with cesium acetate on the PbI2 thin film array, converting to obtain a CsPbI3-xBrx thin film array, and annealing at 135 DEG C for 15 minutes to improve the crystallinity of the thin film. The prepared perovskite polycrystalline thin film is compact and flat in surface, good in crystallinity, accurate in position of each pixel point of an array, uniform in thickness and size, controllable in morphology, thickness and height and good in quality, and has good universality and universality.

The present invention discloses a NaBiS2 polycrystalline thin film material, a TiO2 / NaBiS2 heterojunction thin film and their optoelectronic detection applications, belonging to the technical fields of new electronic materials and new devices. The present invention uses a secondary solution reaction method of a ternary solvent system of ethylenediamine, β-mercaptoethanol and 1,2-ethanedithiol to dissolve sodium hydroxide, bismuth oxide and sublimed sulfur as a precursor solution for forming NaBiS2, and adopts a solution spin-coating method to grow a pure-phase cubic NaBiS2 thin film with a band gap of 1.35 eV, and the surface morphology is flat, uniform and crack-free. The preparation process of the thin film is simple, the cost is low, and the product is a pure phase. At the same time, the present invention proposes an optoelectronic detection application of its heterojunction TiO2. The optoelectronic detector is successively composed of an FTO substrate, a TiO2 porous layer, a NaBiS2 light-absorbing layer and a cheap carbon electrode. A heterojunction is formed by combining the NaBiS2 light-absorbing layer with the TiO2 porous layer, making it have good self-powered characteristics, and providing an example of a new semiconductor thin film material, a preparation method and an optoelectronic detection application in the field of electronic materials and devices.

The application discloses a P epitaxial BCD-on-SOI integration technology and a complementary bipolar transistor device. The integration steps are as follows: forming a DTI deep trench isolation region; forming an N-type side well N+ of an external collector region of a DTI deep trench full isolation NPN transistor on an insulating layer silicon; forming a P-type side well P+ of an external collector region of a DTI deep trench full isolation longitudinal PNP transistor on an insulating layer silicon; forming a complementary NPN-PNP bipolar transistor structure; completing device-metal interlayer planarization; completing a through-hole tungsten plug structure processing; sputtering an aluminum copper film layer and completing metal wire etching processing. The device comprises a P-type base silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation groove region, an N-type epitaxial layer, a P-type epitaxial layer, an N-type side well injection region, a P-type side well injection region, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug and a metal thin film layer. The application improves the speed and precision of a high-performance circuit of a P epitaxial BCD-on-SOI process.

Disclosed in the present invention is a method for manufacturing a mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design. The method comprises the steps of: 1) growing a field oxide layer above a P-type well of an analog integrated circuit; 2) depositing a polycrystalline capacitor lower electrode plate polycrystalline film layer on a field oxide layer above an N-type well, and performing matched implantation doping; 3) growing a capacitor dielectric layer; 4) depositing a polycrystalline capacitor upper electrode plate polycrystalline film layer, and manufacturing a protective film layer and a protective structure. The mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design comprises a substrate, an N-type buried layer, a P-type buried layer, an epitaxial layer, an N-type well, a P-type well, a field oxide layer, a sacrificial oxide layer, a gate oxide layer, a polycrystalline thin film layer, a silicon dioxide dielectric layer, a silicon oxynitride dielectric layer, a low-dielectric-coefficient filling film layer, a metal interconnection film layer, and a passivation layer. The present invention reduces the impact of parasitic capacitance, substrate noise and crosstalk noise, and realizes the low noise characteristic of integrated capacitors.

This invention discloses a complete set of high-current, wide-power-range, all-dielectric-isolated BCD-on-SOI integrated technology and ESD-protected VDMOS devices. The integration steps are as follows: 1) Forming an N-type buried layer and a P-type buried layer on the surface of the substrate silicon wafer. 2) Forming a DTI deep trench isolation region. 3) Forming a vertical DMOS drain-side-well N+-N-type buried layer interconnect structure. 4) Forming an insulating silicon top-side-well P+-P-type buried layer interconnect structure. 5) Forming an ESD-protected vertical DMOS device structure. 6) Completing the planarization of the device-metal inter-dielectric layer. 7) Completing the through-hole tungsten plug structure fabrication. 8) Sputtering aluminum-copper film layers and completing the metal interconnect etching process. The device includes a P-type substrate silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation trench region, an N-type epitaxial layer, a P-type epitaxial layer, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug, and a metal thin film layer. This invention solves the integration problem of high-current vertical DMOS with BCD-on-SOI process, as well as the challenge of high-density standard device integration, thereby improving the circuit reliability of the process.

The application discloses a method for preparing a high self-polarization piezoelectric performance bismuth ferrite-based film through multi-element isometric solid solution. The method comprises the following steps: configuring sols of more than three different cations which are solid-solved at B positions of bismuth ferrite, then dropping the sols on a substrate, uniformly coating the sols, solidifying, drying, pyrolyzing and annealing, repeating the dropping, uniformly coating, solidifying, drying, pyrolyzing and annealing processes, and obtaining a bismuth ferrite-based ferroelectric polycrystal film with a required thickness. The sol-gel method is adopted to prepare the multi-element isometric solid solution ferroelectric film, so that accurate component control can be realized, the growth of the material on a large-area substrate is suitable, the equipment and synthesis steps are simple, the material is saved, the cost is low, industrialized production is easy to realize, and the prepared ferroelectric polycrystal film has excellent self-polarization characteristics and a high piezoelectric coefficient, so that the ferroelectric polycrystal film has a wide application prospect in the field of electronic material technology.

The invention discloses a device for regulating and controlling grain boundary defects by an electric field and a regulation and control method thereof, the device comprises a substrate, an insulating layer, an organic semiconductor polycrystalline film and source and drain electrodes located at two sides of the same grain boundary, and the channel lengths between the electrodes are different from each other. By applying the same bias voltage to the electrode pairs with different channel lengths, a series of transverse electric fields with different intensities can be generated at the same grain boundary. By means of the electric field gradient, dynamic and in-situ regulation and control can be carried out on inherent local energy barriers and charge traps at the grain boundary, and an effective scheme is provided for preparing high-performance and high-consistency organic integrated circuits.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

The present invention relates to the technical field of perovskite thin films, and specifically discloses a perovskite polycrystalline thin film, a preparation method thereof and an application. The preparation method includes the following steps: dissolving PbI<subgt;2< / subgt> powder, PbBr<subgt;2< / subgt> powder, FAI powder, MAI powder and CsI powder in a solvent to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution and annealing to obtain a perovskite polycrystalline thin film. When preparing the perovskite polycrystalline thin film, the present invention optimizes the material bandgap by adjusting the ratio of iodine (I) to bromine (Br) in the perovskite halogen site, so that when used for underwater optical communication, the responsivity of the detector in the blue-green light band can be improved. Compared with commercial silicon-based detectors, the detector prepared by using the perovskite polycrystalline thin film of the present invention has better weak light response, thus having higher linearity and signal-to-noise ratio, and can have a farther transmission distance under the same illumination conditions, effectively overcoming the defect of insufficient responsivity of traditional detectors in the blue-green light band.

The invention belongs to the technical field of diamond cultivation, and discloses a bias nucleation high-orientation polycrystalline film preparation method and system, a terminal and a storage medium, the method comprises the following steps: determining a target substrate, and performing bias voltage setting on the target substrate to obtain a substrate with bias voltage; constructing a sample molybdenum table, and generating a target substrate surface temperature according to the substrate with the bias voltage and the sample molybdenum table; determining a target polycrystal, and performing bias nucleation treatment on the target polycrystal according to the target substrate surface temperature to obtain a target crystal; and performing growth orientation control and film generation treatment on the target crystal to obtain the high-orientation polycrystalline film. According to the method, the bias voltage is set for the substrate, and the sample molybdenum table is constructed, so that the temperature condition required by diamond in-situ nucleation can be met, and meanwhile, the growth efficiency of the high-orientation polycrystalline film is effectively improved by controlling the growth orientation of the target polycrystalline.

This invention relates to the field of nanomaterial preparation and polycrystalline thin film preparation technology, specifically providing a method for controlling the orientation of polycrystalline thin films using antisolvents. This aims to solve the problems of existing preparation methods, such as cumbersome implementation, incompatibility with industrial production, and potential negative impacts on the integrity of the polycrystalline thin film. To this end, the method for controlling the orientation of polycrystalline thin films using antisolvents includes: coating a pre-prepared precursor solution onto a substrate; coating an antisolvent corresponding to a specific target orientation onto the substrate containing the precursor solution; and subjecting the coated substrate containing the precursor solution and antisolvent to low-temperature annealing to obtain a polycrystalline thin film with the specific target orientation. The annealing time is negatively correlated with the annealing temperature. The polycrystalline thin films prepared by the method of this invention exhibit high orientation consistency, low defect density, high carrier mobility, and a more compact and flat film morphology.

The invention discloses an annular waveguide electron cyclotron resonance plasma chemical vapor deposition device, and belongs to the field of microwave plasma method chemical vapor deposition. The device comprises a microwave power supply, a rectangular waveguide, a three-pin tuner, a short-circuit piston, an annular waveguide, an annular quartz window, a tungsten bias electrode, a cylindrical microwave resonant cavity, a temperature measurement observation window, an air inlet, an air outlet, a liftable substrate table tuning structure and a magnetic field system. The annular waveguide is combined with the cylindrical microwave resonant cavity, so that the axial symmetrical distribution of microwave energy can be realized, and the uniformity of the plasma is improved. The magnetic field system adopts double-layer magnetic field regulation and control, and the integral magnetic field and the plasma uniformity are optimized by independently adjusting the magnetic induction intensity. The pulsed bias power supply provides bias voltage for the substrate, and uniformity of the diamond in nucleation and growth on the heterogeneous substrate is promoted. The device is mainly used for preparing large-size heteroepitaxial single crystal diamond and polycrystalline diamond films, and high-quality uniform deposition of large-area diamond single crystal or polycrystalline films can be realized.

The application provides a gallium arsenide-based terahertz frequency-doubling Schottky diode and a preparation method thereof. The preparation method comprises the following steps: growing a gallium arsenide polycrystalline thin film layer on a diamond substrate, wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide; and preparing a device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer. According to the application, the gallium arsenide polycrystalline thin film layer is directly grown on the diamond substrate, and the Schottky diode is prepared on the basis, the diamond substrate replaces the gallium arsenide substrate to serve as the structural support of the Schottky diode, the process flow is simple, the production cycle is short, the reliability is high, and the heat dissipation performance of the gallium arsenide-based terahertz frequency-doubling Schottky diode is improved.

The invention provides a reversible chiral regulation type circular polarization laser device and a preparation method and application thereof. The reversible chiral regulation type circular polarization laser device structurally comprises a lower substrate, a light modulation layer, an upper substrate, an isolation layer and a gain medium layer from bottom to top in sequence. According to the reversible chiral regulation and control type circular polarization laser device, cholesteric liquid crystal doped with a light-controlled molecular motor is used as a light modulation layer, an organic-inorganic mixed perovskite polycrystalline film is used as a light gain medium, amplified spontaneous emission gain is generated through laser pumping of the perovskite polycrystalline film, and through light modulation of CLC, the light gain of the light modulation layer is improved. Therefore, high-performance circular polarization laser is emitted. Under the irradiation of ultraviolet light, cis-trans isomerization occurs to the light-controlled molecular motor, so that CLC chirality is reversed, and the circular polarization asymmetry factor of emergent laser is up to-1.38-1.22. By adjusting the ultraviolet light power and replacing the perovskite polycrystalline thin film with different halogen components, the laser device can realize multi-color, different-chirality and high-circular-polarization-degree laser emission.

This invention discloses a surface treatment method for a semiconductor structure, comprising: providing a semiconductor structure having an isolation structure and an exposed region defined by the isolation structure; baking the semiconductor structure at a first preset temperature, the first preset temperature being configured to suppress corner rounding at the edges of the exposed region and to initially smooth the surface of the exposed region; and baking the semiconductor structure at a second preset temperature in an atmosphere containing an etching gas to remove the oxide layer on the surface of the exposed region, wherein the second preset temperature is lower than the first preset temperature. This invention effectively suppresses corner rounding at the edges of the active region and removes the native oxide layer and surface impurities. This method significantly increases the effective single-crystal platform area for subsequent epitaxial growth, reduces the base resistance of the device, and improves high-frequency radio frequency characteristics, while ensuring the continuity of polycrystalline thin film growth on the isolation structure.

The invention belongs to the technical field of diamond film preparation, and relates to a simple large-size high-quality self-supporting diamond thick film preparation method, which comprises the following steps: surface pretreatment: grinding a large-size molybdenum block by using diamond micro powder to remove surface impurities, and then carrying out plasma treatment on the surface of the large-size molybdenum block by using CVD (Chemical Vapor Deposition) equipment; carrying out CVD growth; after part of the CVD growth steps are repeated according to the required polycrystalline film thickness, under the conditions that the temperature is 850-950 DEG C, the hydrogen is 5-8 slm, and the pressure is 4.5-5.5 kpa, methane accounting for 2-3 vol% of the mixed gas is started, a nanocrystalline layer with the thickness being 0.3-1 mm grows through CVD equipment, and therefore the high-quality diamond film is prepared. The preparation method disclosed by the invention is simple and convenient, can be repeatedly used for multiple times, can reduce the use cost of the substrate in the later period, realizes high whole film rate and low thermal shock stress of the self-supporting thick film, and not only improves the quality of the diamond film.

The invention belongs to the field of two-dimensional material preparation, and discloses a polycrystalline Te film and a preparation method thereof. The preparation method comprises the steps that a Te source is used as an evaporation source, single crystal Si or sapphire aluminum oxide is used as a growth substrate, the temperature of the growth substrate ranges from-40 DEG C to-80 DEG C, Te molecules are deposited on the growth substrate through a thermal evaporation technology, and the continuous polycrystalline Te thin film is generated through induction of the growth substrate. According to the preparation method, the specific growth substrate is selected, and the large-size continuous-domain polycrystalline Te film is prepared through a low-temperature substrate auxiliary thermal evaporation process, so that the preparation of the high-quality Te film is realized.

The invention discloses a soft X-ray detector and a manufacturing method thereof. The soft X-ray detector sequentially comprises a bottom electrode, a first electrode and a second electrode from bottom to top, an electron transport layer; the perovskite layer is a perovskite polycrystalline thin film and is suitable for responding to soft X-rays to output electric signals; the two-dimensional perovskite passivation layer is made of a two-dimensional perovskite thin film, the two-dimensional perovskite thin film has an amino group, and the amino group is suitable for passivating defects on the surface of the perovskite layer; a hole transport layer; and a top electrode. By forming the two-dimensional perovskite passivation layer on the perovskite layer, defects on the surface of the perovskite layer can be effectively passivated, recombination of photon-generated carriers can be reduced, the quantum efficiency of the device can be improved, the dark current of the device can be reduced, and effective detection of soft X-rays can be realized.

The invention relates to the technical field of perovskite crystal surface treatment, in particular to a perovskite polycrystalline thin film space selective passivation device and method. The device comprises a laser, a light beam adjusting unit and a three-dimensional mobile platform, the light beam adjusting unit comprises a first aperture diaphragm, an attenuator, a second aperture diaphragm, a chopper and a cylindrical lens which are coaxially arranged in sequence; the first aperture diaphragm and the second aperture diaphragm are arranged in the emergent direction of the laser; the chopper is used for modulating a laser waveform to form a periodically distributed light field; the laser emits a laser beam, the laser beam enters the first aperture diaphragm to be collimated, the laser power is controlled by the attenuator, the waveform is modulated by the chopper after the laser beam is collimated by the second aperture diaphragm, and the laser beam is focused on a perovskite polycrystalline film sample through the cylindrical lens to realize surface passivation. The device has the advantages that the chopper regulates and controls the laser waveform, generates a laser pulse beat frequency effect, generates a periodically distributed light field on the surface of the thin film, and realizes passivation of two typical deep and shallow energy level defects in perovskite.

The invention discloses a solar cell preparation method for regulating and controlling the quality of an evaporated copper phthalocyanine film based on a substrate, and the method comprises the steps: preparing an electron transmission layer on a conductive substrate, preparing a perovskite light absorption layer, covering the surface of perovskite with an ultrathin Spiro-OMeTAD molecular layer through a vacuum thermal evaporation method, and carrying out the evaporation of a copper phthalocyanine hole transmission layer. And finally evaporating a metal counter electrode. Wherein the Spiro-OMeTAD molecular layer can effectively repair physical defects on the surface of the perovskite polycrystalline thin film, copper phthalocyanine molecular deposition kinetics are further regulated and controlled, and closer molecular accumulation and better thin film coverage are obtained. The Spiro-OMeTAD can also optimize an interface energy level structure, and reverse injection of interface electrons is effectively blocked. The transmission efficiency of interface carriers is improved through improvement of the film quality and the interface energy level, and the CuPc-based perovskite solar cell shows 19.7% of photoelectric conversion efficiency. The introduction of the vacuum thermal evaporation technology further reduces the material cost, is more beneficial to the realization of large-area film formation, and lays a foundation for the marketization of the perovskite solar cell.

The present invention discloses a device and method for crystallization and recrystallization of amorphous or polycrystalline thin film materials of organic-inorganic metal halide perovskite and its derivatives, particularly involving lateral regional melting recrystallization, and applied to amorphous or polycrystalline thin films of perovskite, which is conducive to reducing the gaps between crystal domains, eliminating the interface between crystal domains and increasing the crystal domains. The device includes a radiation source, a focusing and scanning unit, an atmosphere control environment of the film, a heating platform of the film and a heater of the precursor, etc. The present invention is suitable for photovoltaic films, LED display light-emitting films, image detector films and x-ray image detector films that require large-area perovskite single crystals, quasi-single crystals or polycrystalline with large crystal domains.

The present application relates to the technical fields of semiconductor material preparation, and particularly relates to a preparation method of gallium nitride single wafer material, which comprises the following steps: placing a silicon carbide substrate sheet larger than a standard size in a containing groove of a graphite tray and assembling a cylindrical silicon nitride ceramic protective cover into the substrate tray to form a substrate tray; placing the substrate tray into a magnetron sputtering growth chamber to sequentially prepare a zinc-aluminum-oxygen polycrystalline thin film and an aluminum nitride polycrystalline thin film; placing the substrate tray into a high-temperature high-vacuum annealing furnace chamber to perform high-temperature high-vacuum annealing treatment; placing the substrate tray into a hydride vapor phase epitaxy reaction chamber to prepare a gallium nitride single thick film material; performing cutting, grinding and polishing processing on the peeled-off gallium nitride single thick film wafer larger than the standard size to obtain a standard-size gallium nitride single wafer material; and cleaning the peeled-off silicon carbide substrate sheet and the used cylindrical silicon nitride ceramic protective cover for reuse. The present application can realize low-stress, low-dislocation density, low-cost and high-yield preparation of the standard-size gallium nitride single wafer material.

This invention discloses a method for preparing rare-earth oxide / gallium oxide polycrystalline thin films with magnetoresistance effect. The method includes: preparing a deposition raw material, wherein the deposition raw material is a rare-earth oxide / gallium oxide composite particle with a core-shell structure, the core of which is composed of La... 1‑x Ca x TmO3 rare earth oxide precursor powder; substrate pretreatment; composite particles placed in the evaporation boat of a thermal resistance evaporation apparatus, allowing the evaporation raw material to melt and evaporate, depositing on the substrate surface to form a wet film; finally, flash calcination under oxygen-rich conditions of 50%~95% to obtain a polycrystalline thin film. This invention uses a single core-shell structure composite particle as the evaporation source, achieving synergistic evaporation of rare earth oxides and gallium oxide, solving the problems of component fractionation of multi-component materials and evaporation source explosion and splashing. The resulting thin film has high crystal quality and significant magnetoresistance effect, and the equipment is simple, low-cost, and conducive to large-scale production.

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

The application discloses a method for improving stability of a lead halide perovskite thin film and a product, and the method comprises the following steps: covering an alcohol solution of a polymerizable acrylic small molecule on a crystallized perovskite polycrystalline thin film, and passivating surface defects of the perovskite through a light curing mode at room temperature, so as to improve hydrophobicity of the perovskite thin film and further improve performance and stability of a device; the structure of the polymerizable acrylic small molecule is [CH2=CHCOO] n R, R is a single or multiple groups of phenyl, a saturated alkyl chain, a methoxy group, a carbonyl group, a nitrile group, a carboxyl group, an aldehyde group and a hydroxyl group in any combination, the method of the application can obviously improve hydrophobicity of the perovskite thin film, repair surface defects of the perovskite thin film, improve performance and stability of a perovskite solar cell, and has the advantages of simple process, low requirement on equipment, high stability and repeatability, good universality, low dependence on environment and low cost.

The invention belongs to the technical field of film preparation, and provides a LuNxHy film and a preparation method thereof. The preparation method comprises the following steps: by taking Lu metal as a target material and argon-nitrogen mixed gas as reaction gas, depositing a LuNx film on a substrate through reactive sputtering; and carrying out heat treatment on the LuNx film in a hydrogen-containing atmosphere, the LuNxHy thin film is a single-crystal or polycrystalline thin film; in the film, 0 < x < 1, and y > 1. The invention further discloses the LuNxHy thin film prepared according to the method. The LuNxHy film with stable structure and property is prepared through a two-step method, and the method is simple in preparation, low in cost and suitable for large-scale production. The thin film can stably exist at normal temperature and normal pressure and can be a single-crystal or polycrystalline thin film, and the problem that a single-crystal thin film cannot be prepared in the prior art is solved. When the LuNx film is prepared, the nitrogen doping amount can be accurately, uniformly and repeatedly controlled, and the LuNx film is stable at normal temperature and normal pressure.