Flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery and preparation method thereof

A thin-film solar cell and flexible substrate technology, which is applied in the field of solar cells, can solve the problems of high material cost and unfavorable market application of battery products, and achieve high conversion efficiency, prevent interdiffusion of elements, and simple preparation methods

Inactive Publication Date: 2012-10-31
江苏天孚太阳能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, Si material is mainly used as the substrate of iron silicide thin film solar cells, and the material cost is high, which is not conducive to the market application of battery products.

Method used

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  • Flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Refer to attached figure 1 , to prepare flexible β-FeSi 2 The manufacture method of thin-film solar cell comprises the steps:

[0031] Step 1. On the stainless steel foil substrate, deposit a Mo film on the back electrode by DC pulse magnetron sputtering with a thickness of 500nm to 900nm. The atmosphere during sputtering is Ar gas, and the vacuum degree of the atmosphere is 0.5Pa to 1Pa;

[0032] Step 2, using radio frequency magnetron sputtering Si target, depositing a Si thin layer with a thickness of 3nm-10nm on the back electrode, and the purity of the Si target material is above 99.99%. In the subsequent rapid thermal annealing process in a vacuum environment, MoSi is formed on the back electrode through the interdiffusion reaction of Mo and Si. 2 Membrane transition layer, MoSi 2 The film thickness is 10 nm to 20 nm. The rapid thermal annealing temperature is 500° C. to 750° C., and the annealing treatment time is 3 seconds to 10 seconds.

[0033] Step 3. Us...

Embodiment 2

[0038] In the above step 3 and step 5, the Fe—Si film can be deposited by intermediate frequency magnetron sputtering. All the other steps are the same as in Example 1.

Embodiment 3

[0040] In the above step 1, two layers of Mo films may be deposited on the stainless steel foil substrate by using DC pulse magnetron sputtering, with a total thickness of 500nm-900nm. On the stainless steel foil substrate, a Mo film with a thickness of 30nm-100nm is deposited by sputtering, the atmosphere is Ar gas during sputtering, and the vacuum degree of the atmosphere is 0.8Pa-0.9Pa. Then, a Mo film with a thickness of 700nm-800nm ​​is deposited by sputtering, the atmosphere is Ar gas during sputtering, and the vacuum degree of the atmosphere is 0.5Pa-0.6Pa. The bilayer Mo film has a (110) preferred orientation, which is conducive to the subsequent preparation of high-quality β-FeSi 2 film. All the other steps are the same as in Example 1.

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Abstract

The invention discloses a flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery and a preparation method thereof, and relates to a structural design of a polycrystalline beta-FeSi2 thin-film solar battery device and a preparation method of a thin-film semiconductor material. The flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery is characterized in that a flexible metal foil is used as a substrate material (1), a bottom electrode is metal molybdenum (Mo) film (2), an n-p node is formed by an N-type polycrystalline thin film beta-FeSi2 (4), a weak N-type polycrystalline thin film beta-FeSi2 (5) and a P-type polycrystalline thin film beta-FeSi2 (6); and a transparent conducting layer is made of aluminium zinc oxide (ZnO: Al) (7). The flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery is characterized in that pn nodes of the solar battery are made of betal-FeSi2 polycrystalline thin film material. The preparation method comprises the step of preparing the bottom electrode (2), a transition layer (3), the N-type thin film layer (4), the weak N-type thin film layer (5) and the P-type thin film layer (6), the transparent conducting layer (7) and an upper electrode metal film (8). The flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery and the preparation method of the flexible-substrate iron silicide (beta-FeSi2) thin-film solar battery have the advantages that the materials of all layers of the battery can be obtained by adopting magnetron sputtering deposition under the vacuum environment, the structure is simple, the weight is light, the bendability is achieved, the cost performance is high, the cost of the raw materials of the battery is low, the preparation method is simple and pollution-free, large-area and large-scale production of battery products is easily carried out by adopting a roll-to-roll continuous mode, and the application field of the battery is wide.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a flexible substrate iron silicide (β-FeSi 2 ) thin film solar cell and its preparation method. Background technique [0002] Direct bandgap semiconductor material iron silicide (β-FeSi 2 ) has abundant reserves of raw materials, non-toxic, high absorption coefficient (~10 5 cm -1 ) and other characteristics, its bandgap width is 0.8eV ~ 0.92eV, and it has received more and more attention and development in the fields of optoelectronics, thermoelectrics, and microelectronics. [0003] β-FeSi 2 The bandgap width of the material is narrow, and its response range to the solar spectrum can be extended to about 1450nm, which greatly improves the utilization rate of the solar spectrum. Based on β-FeSi 2 The solar cell theoretical conversion efficiency of the material can reach more than 25%. β-FeSi in solar cells 2 The thickness of the material is less than 1 μm, and it can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/0368H01L31/032H01L31/068H01L31/18
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 王泽洪
Owner 江苏天孚太阳能有限公司
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