4results about How to "Prevent interdiffusion" patented technology

This application provides a gas mixing device and a semiconductor apparatus thereof. The gas mixing device includes: an inlet member having at least two gas channels formed therein; and a mixing member disposed on one side of the inlet member, having a mixing chamber within it, the mixing chamber communicating with the gas channels, and an outlet on the side of the mixing chamber away from the gas channels. The section of the gas channel communicating with the mixing chamber is oriented towards the outlet of the mixing chamber, and an angle is formed between adjacent gas channels. Gases from at least two gas channels enter the mixing chamber, mix, and then exit from the outlet. By oriented the gas channels towards the outlet of the mixing chamber and defining the angle between adjacent gas channels, this application avoids mutual diffusion or backflow of gases from different gas channels when they enter the mixing chamber, thereby preventing contamination of the gas pipeline.

This invention discloses a light-emitting device and a display panel. The light-emitting device includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge-generating layer, and an ion-blocking and electron-transporting layer; wherein the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge-generating layer is located between the two light-emitting structural layers; and the ion-blocking and electron-transporting layer is located between the charge-generating layer and the electron-transporting and injection layer of the light-emitting structural layer. In this invention, under high-temperature operation, the ion-blocking and electron-transporting layer can prevent ions in the charge-generating layer from diffusing into the electron-transporting and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the efficiency of electron transport from the charge-generating layer to the electron-transporting and injection layer. While improving the luminous brightness, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation.

The application discloses a polycrystalline cubic boron nitride composite sheet and a preparation method thereof, and relates to the technical field of superhard materials. The preparation method of the polycrystalline cubic boron nitride composite sheet comprises the following steps: pretreating cubic boron nitride to obtain cubic boron nitride coated with silicide; the silicide comprises at least one of silicon carbide, silicon nitride, silicon boride and silicon carbonitride; mixing the cubic boron nitride coated with silicide and a binder to obtain a mixture; and performing sintering treatment on the mixture and a hard alloy base body to obtain the polycrystalline cubic boron nitride composite sheet. The preparation method is simple and efficient, and the polycrystalline cubic boron nitride composite sheet prepared by the method has the characteristics of good corrosion resistance, good oxidation wear resistance, good diffusion wear resistance, good chemical wear resistance, good heat resistance and long service life.

This invention provides a gallium arsenide triple-junction solar cell and its fabrication method, relating to the field of solar cell technology. It replaces the existing technology's self-forming Ge substrate with a low-cost N-type GaAs substrate and a thinner N-type Ge epitaxial layer. The thickness of the N-type Ge epitaxial layer ranges from 1 μm to 3 μm, reducing material costs by more than 40%. A two-step growth method is used to form a stacked low-temperature nucleation layer and a high-temperature host layer to form the N-type Ge epitaxial layer, which serves as the base cell of the gallium arsenide triple-junction solar cell. The epitaxial quality is high, with a dislocation density of the N-type Ge epitaxial layer less than or equal to 5 × 10⁻⁶. 6 cm ‑2 This effectively suppresses the problem of Ga / Ge interdiffusion; the photoelectric conversion efficiency of this gallium arsenide triple junction solar cell has been verified to be greater than 30%, which is comparable to the photoelectric conversion efficiency of gallium arsenide triple junction solar cells with Ge substrates forming their own bottom cells in existing technologies.