12results about How to "Prevent interdiffusion" patented technology

A laminate (10) has a core resin layer (11), a first metal layer (12) provided on at least one surface side of the core resin layer (11) and provided with a peeling means, a diffusion prevention layer (13) provided on the surface of the first metal layer (12) on the opposite side from the core resin layer (11), and an anti-plating layer (14) provided on the surface of the diffusion prevention layer (13) on the opposite side from the first metal layer (12). A protective plating layer (15) may be provided in a region where the anti-plating layer (14) is not provided on the side of the anti-diffusion layer (13) opposite the first metal layer (12).

The present application relates to a method for manufacturing an epitaxial layer, an epitaxial layer and a super-junction power device with a wide process window. The present application comprises providing an N-type substrate with a high doping concentration, forming a first epitaxial layer, forming a second epitaxial layer, defining the positions of N-type columns and P-type columns, etching to form a first empty trench, forming a silicon dioxide column, forming a first silicon dioxide column with a second barrier layer on the top and a second silicon dioxide column with the second barrier layer on the top being etched away, forming a second empty trench, growing an N-type semiconductor to fill the second empty trench, the N-type semiconductor in the second empty trench forming an N-type column, forming a third barrier layer, selectively etching the third barrier layer, etching to form a third empty trench, growing a P-type semiconductor to fill the third empty trench, the P-type semiconductor in the third empty trench forming a P-type column, grinding and removing the third barrier layer, and the P-type columns and the N-type columns being distributed at intervals. The present application ensures that the total amount of N-type impurities is equal to the total amount of P-type impurities.

This application provides a gas mixing device and a semiconductor apparatus thereof. The gas mixing device includes: an inlet member having at least two gas channels formed therein; and a mixing member disposed on one side of the inlet member, having a mixing chamber within it, the mixing chamber communicating with the gas channels, and an outlet on the side of the mixing chamber away from the gas channels. The section of the gas channel communicating with the mixing chamber is oriented towards the outlet of the mixing chamber, and an angle is formed between adjacent gas channels. Gases from at least two gas channels enter the mixing chamber, mix, and then exit from the outlet. By oriented the gas channels towards the outlet of the mixing chamber and defining the angle between adjacent gas channels, this application avoids mutual diffusion or backflow of gases from different gas channels when they enter the mixing chamber, thereby preventing contamination of the gas pipeline.

This invention discloses a light-emitting device and a display panel. The light-emitting device includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge-generating layer, and an ion-blocking and electron-transporting layer; wherein the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge-generating layer is located between the two light-emitting structural layers; and the ion-blocking and electron-transporting layer is located between the charge-generating layer and the electron-transporting and injection layer of the light-emitting structural layer. In this invention, under high-temperature operation, the ion-blocking and electron-transporting layer can prevent ions in the charge-generating layer from diffusing into the electron-transporting and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the efficiency of electron transport from the charge-generating layer to the electron-transporting and injection layer. While improving the luminous brightness, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation.

The invention discloses a wire-based directional energy deposition laminated structure Cu-Fe additive part and a preparation method and application thereof, and through a wire directional energy deposition technology, Cu welding wires and Fe welding wires are alternately deposited on a substrate to obtain the laminated structure Cu-Fe additive part; the proportion of Cu and Fe elements in the additive part is regulated and controlled by controlling the wire feeding speed, and the fusion condition of a Cu and Fe deposition layer interface layer and alloy element transition are regulated and controlled by controlling the welding current and voltage; the prepared Cu-Fe alloy additive part has higher strength, hardness and conductivity; according to the Cu-Fe additive part prepared through the wire directional energy deposition technology, the problem that in other preparation processes, due to material metallurgy incompatibility, the performance is reduced can be solved; and compared with other additive processes, the method has the characteristics of being relatively high in deposition rate, relatively low in cost, small in size limitation and the like, and has huge potential in the aspect of building large structural parts with complex structures.

The invention belongs to the technical field of Kjeldahl determination. The efficient receiving reaction device comprises a receiving cup, a receiving cup cover, a stirring motor and a receiving cup base, the stirring motor is fixed to the receiving cup cover, a stirring rod of the stirring motor extends into the receiving cup, and the receiving cup is fixed in the receiving cup base; a receiving liquid inlet hole and a titration acid hole are formed in the receiving cup cover, a receiving liquid inlet pipe penetrates through the receiving liquid inlet hole and extends into the receiving cup, and a first connecting line is formed between the central point of the receiving liquid inlet hole and the central point of the receiving cup cover; the included angle between the acid titration hole and a second connecting line between the central point of the acid titration hole and the central point of the receiving cup cover is less than or equal to 90 degrees; no matter whether the stirring motor rotates clockwise or anticlockwise, the receiving liquid and the titration acid can be quickly mixed and reacted, so that the measurement fluctuation of the colorimetric sensor and the potential sensor is reduced, and the detection efficiency is improved.

The application discloses a polycrystalline cubic boron nitride composite sheet and a preparation method thereof, and relates to the technical field of superhard materials. The preparation method of the polycrystalline cubic boron nitride composite sheet comprises the following steps: pretreating cubic boron nitride to obtain cubic boron nitride coated with silicide; the silicide comprises at least one of silicon carbide, silicon nitride, silicon boride and silicon carbonitride; mixing the cubic boron nitride coated with silicide and a binder to obtain a mixture; and performing sintering treatment on the mixture and a hard alloy base body to obtain the polycrystalline cubic boron nitride composite sheet. The preparation method is simple and efficient, and the polycrystalline cubic boron nitride composite sheet prepared by the method has the characteristics of good corrosion resistance, good oxidation wear resistance, good diffusion wear resistance, good chemical wear resistance, good heat resistance and long service life.

The present application relates to the field of electrode foil manufacturing technology, and in particular to a Ti / Al composite electrode foil, a manufacturing method and an electrolytic capacitor. The manufacturing method of the Ti / Al composite electrode foil comprises the following steps: S1, surface pretreatment; S2, synthesis of composite material sheets; S3, plasma enhanced chemical vapor deposition of the composite material sheets; S4, immersing the pretreated aluminum foil obtained in S1 and the composite material sheet deposited with a titanium film obtained in S3 in a self-assembly agent solution with a concentration of 1-5wt%, and after immersion for 0.5-1h, drying at 80-100°C to obtain an impregnated aluminum foil and an impregnated composite material sheet; S5, composite bonding. The present application provides a Ti / Al composite electrode foil, a manufacturing method and an electrolytic capacitor to solve the problem in the related art that the titanium and aluminum interfaces in the Ti / Al composite electrode foil are poorly bonded, which affects the performance of the composite electrode foil.

This invention provides a gallium arsenide triple-junction solar cell and its fabrication method, relating to the field of solar cell technology. It replaces the existing technology's self-forming Ge substrate with a low-cost N-type GaAs substrate and a thinner N-type Ge epitaxial layer. The thickness of the N-type Ge epitaxial layer ranges from 1 μm to 3 μm, reducing material costs by more than 40%. A two-step growth method is used to form a stacked low-temperature nucleation layer and a high-temperature host layer to form the N-type Ge epitaxial layer, which serves as the base cell of the gallium arsenide triple-junction solar cell. The epitaxial quality is high, with a dislocation density of the N-type Ge epitaxial layer less than or equal to 5 × 10⁻⁶. 6 cm ‑2 This effectively suppresses the problem of Ga / Ge interdiffusion; the photoelectric conversion efficiency of this gallium arsenide triple junction solar cell has been verified to be greater than 30%, which is comparable to the photoelectric conversion efficiency of gallium arsenide triple junction solar cells with Ge substrates forming their own bottom cells in existing technologies.

The invention discloses a preparation method and application of a core-shell structure lithium-rich manganese-based precursor for oxidizing pinning Mn ions. The preparation method comprises the following steps: preparing a first nickel-manganese mixed salt solution and a second nickel-manganese mixed salt solution; the concentrations of metal salts in the two nickel-manganese mixed salt solutions are 1-3 mol / L, but the nickel-manganese proportions are different; preparing a precipitator and a complexing agent; under the condition of nitrogen atmosphere protection, a first nickel-manganese mixed salt solution, a precipitant and a complexing agent are introduced to form a base solution, and a first-stage co-precipitation reaction is carried out; then introducing a second nickel-manganese mixed salt solution, carrying out a second-stage coprecipitation reaction in a nitrogen atmosphere, after the reaction is carried out for 20-50 hours, changing the atmosphere into compressed air, continuing the reaction, and after the reaction is carried out for 13-43 hours, stopping the reaction to obtain a coprecipitation product; and carrying out centrifugation, washing and vacuum drying on the coprecipitation product to obtain the lithium-rich manganese-based precursor with the core-shell structure. The core-shell structure is good in stability and can inhibit surface side reactions, so that better electrochemical performance is obtained.

The invention discloses a method for preparing a MoSi2 coating on the surface of molybdenum alloy, which comprises the following steps of: ball-milling silicide alloy powder, hot-pressing and sintering to prepare a target material, and sputtering a high-entropy silicide thin layer on the molybdenum alloy through magnetron sputtering; and then MoSi2 powder is preset on the surface of the molybdenum alloy sputtered with the high-entropy silicide thin layer, and then the MoSi2 coating is prepared through laser scanning. The high-entropy silicide thin layer is firstly sputtered on the surface of the molybdenum alloy, then the MoSi2 coating is prepared on the high-entropy silicide thin layer through the laser scanning technology, the high-entropy silicide thin layer is used for preventing Si elements in a silicide coating body from diffusing into a refractory metal matrix, and the service life of the MoSi2 coating is effectively prolonged.

The present invention relates to an indium antimonide planar focal plane detector chip and its preparation, belonging to the field of infrared detector technology. The chip includes an indium antimonide wafer, a first P-type doping region, a second P-type doping region, a passivation film and a metal electrode; the passivation film is deposited on a surface of the indium antimonide wafer containing the first P-type doping region and the second P-type doping region, and the passivation film region corresponding to the first P-type doping region is processed with an ohmic hole, and the metal electrode is deposited on the passivation film in and around the ohmic hole, and the deposited metal electrode does not contact the passivation film region corresponding to the second P-type doping region. The present invention solves the crosstalk problem between pixel regions by designing the structure of the P-type doping region inside the chip, and can also reduce leakage current; and the preparation process of the chip is simple, with good operability and feasibility, providing an effective way to optimize chip crosstalk and leakage current, and promoting the development of the infrared detector industry.