High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof

Abstract

The invention belongs to the technical field of a semiconductor and particularly relates to a high-mobility MOS (Metal Oxide Semiconductor) capacitor and a manufacturing method thereof. The MOS capacitor structure is in sequence provided with a mobility substrate, a trimethyl aluminum purification layer, an HfO2 grid medium layer and an electrode. The manufacturing method for the high-mobility MOS capacitor comprises the following steps of: washing the high-mobility substrate; forming the trimethyl aluminum purification layer on the surface of the substrate; depositing the HfO2 grid medium by ALD; and making the electrode. The trimethyl aluminum purification layer can reduce residual oxide content on the surface of the substrate to reduce interfacial state density with the grid medium material so as to improve interface properties. The deposited HfO2 medium layer has accurate controllability of film thickness, excellent conformality, good interface control capability and wonderful large area uniformity, so that electric properties of the MOS capacitor are greatly improved, thereby improving the performance of the MOS transistor.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a high-mobility MOS capacitor and a manufacturing method thereof. Background technique [0002] Since the 1960s, silicon has been the most important semiconductor material in the modern electronics industry, mainly due to the fact that it forms very high-quality native oxides for surface passivation. After more than 40 years of continuous scale-down development, the shrinkage of the classic bulk silicon MOSFET is approaching its physical limit, which requires the innovation of new materials and new device structures. [0003] High dielectric constant (k) materials can relax the restriction on the physical thickness of the medium by k / 3.9 times, and its research in the field of silicon-based integrated circuits has made a lot of progress. Intel has combined high-k gate dielectric materials and metal gates It has been applied to the CPU manufacturing technology ...

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Problems solved by technology

However, the mobility of holes and electrons did not meet the expected goals, which may be mainly due to the fact that the interface formed between the gate dielectric and the surface of the high-mobility substrate is not perfect, the mutual diffusion of gate dielectric and substrate atoms or the interface state density It is caused by too high, so the surface needs to be properly passivated before depositing high-k gate dielectric

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