High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof

A high-mobility, production method technology, applied in the field of high-mobility MOS capacitors and its production, can solve the problems of imperfect interfaces, high interface state density, and electron mobility not reaching the expected goal, so as to improve electrical performance, Effects of prevention of interdiffusion, reduction of defect charge and interface state density

Inactive Publication Date: 2012-04-04
FUDAN UNIV
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Problems solved by technology

However, the mobility of holes and electrons did not meet the expected goals, which may be mainly due to the fact that the interface formed between the gate dielectric and the surface of the high-mobility substrate is

Method used

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  • High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof
  • High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof
  • High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof

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[0025] In the following, the present invention will be further described in detail in conjunction with the entire high-mobility MOS capacitor manufacturing flow chart and specific implementations. In the figure, for convenience of description, the thickness of layers and regions are enlarged or reduced, and the size shown does not represent the actual size. Although these figures do not completely accurately reflect the actual size of the device, they still completely reflect the interrelationship between the area and the composition structure.

[0026] 1) If the substrate is a germanium (Ge)-based substrate, the steps are as follows:

[0027] Step 1: Select a commercial single crystal Ge wafer, n-type Sb doping, crystal orientation (100), resistivity 0.21-0.26 Ω·cm as the substrate, that is figure 2 There is a layer of natural oxidized GeO on the surface of the uncleaned Ge substrate. x , which is figure 2 102 floors in;

[0028] Step 2: Soak the substrate in ethanol for 10 min;...

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Abstract

The invention belongs to the technical field of a semiconductor and particularly relates to a high-mobility MOS (Metal Oxide Semiconductor) capacitor and a manufacturing method thereof. The MOS capacitor structure is in sequence provided with a mobility substrate, a trimethyl aluminum purification layer, an HfO2 grid medium layer and an electrode. The manufacturing method for the high-mobility MOS capacitor comprises the following steps of: washing the high-mobility substrate; forming the trimethyl aluminum purification layer on the surface of the substrate; depositing the HfO2 grid medium by ALD; and making the electrode. The trimethyl aluminum purification layer can reduce residual oxide content on the surface of the substrate to reduce interfacial state density with the grid medium material so as to improve interface properties. The deposited HfO2 medium layer has accurate controllability of film thickness, excellent conformality, good interface control capability and wonderful large area uniformity, so that electric properties of the MOS capacitor are greatly improved, thereby improving the performance of the MOS transistor.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a high-mobility MOS capacitor and a manufacturing method thereof. Background technique [0002] Since the 1960s, silicon has been the most important semiconductor material in the modern electronics industry, mainly due to the fact that it forms very high-quality native oxides for surface passivation. After more than 40 years of continuous scale-down development, the shrinkage of the classic bulk silicon MOSFET is approaching its physical limit, which requires the innovation of new materials and new device structures. [0003] High dielectric constant (k) materials can relax the restriction on the physical thickness of the medium by k / 3.9 times, and its research in the field of silicon-based integrated circuits has made a lot of progress. Intel has combined high-k gate dielectric materials and metal gates It has been applied to the CPU manufacturing technology ...

Claims

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Application Information

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IPC IPC(8): H01L29/94H01L21/334
Inventor 卢红亮耿阳孙清清周鹏王鹏飞张卫
Owner FUDAN UNIV
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