Phase change memory and manufacturing method thereof
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of phase change memory and manufacturing method, which is applied in the field of phase change memory and its manufacture, and can solve the problems that phase change memory cannot meet the application requirements of storage type memory, etc.
Inactive Publication Date: 2019-10-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF9 Cites 13 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for manufacturing a phase-change memory, which is used to solve the problem that the phase-change memory in the prior art cannot meet the application requirements of storage-type memory
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0056] The present invention provides a manufacturing method of phase change memory, please refer to figure 1 , shown as a process flow diagram of the method, comprising the following steps:
[0057] S1: Provide a substrate, and form a laminated structure on the substrate, the laminated structure sequentially includes a first electrode material layer, a first transition material layer, a threshold gate material layer, a second transition material layer, second electrode material layer, third transition material layer, phase change material layer, fourth transition material layer and third electrode material layer;
[0058] S2: forming isolation grooves in the stacked structure, the isolation grooves are opened from the top surface of the stacked structure, and extend down to the surface of the substrate, so as to separate the stacked structure into a plurality of columns structure;
[0059] S3: Form an isolation material layer in the isolation groove, the isolation material ...
Embodiment 2
[0091] The present invention also provides a phase change memory, please refer to Figure 12 , showing a schematic cross-sectional structure of the phase-change memory, including a substrate 1, an isolation material layer 12 and a plurality of phase-change memory cells, wherein the plurality of phase-change memory cells are separately arranged on the substrate 1, so The phase-change memory cell has a columnar structure, which includes a first electrode material layer 2, a first transition material layer 3, a threshold gate material layer 4, a second transition material layer 5, and a second electrode material layer 6 from bottom to top. , a third transition material layer 7, a phase change material layer 8, a fourth transition material layer 9 and a third electrode material layer 10; the isolation material layer 12 is located on the substrate 1 and surrounds the phase change memory unit Each of the phase change memory cells is isolated from each other by the isolation material...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention provides a phase change memory and a manufacturing method thereof. The phase change memory comprises a substrate, a plurality of phase change memory units and isolation material layers.The phase change memory units are discretely arranged on the substrate. Each phase change memory unit comprises a first electrode material layer, a first transition material layer, a threshold gate tube material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer and a third electrode material layer in turn from bottom to top. The isolation material layers are located on the substrate and surround the sides of the phase change memory units, and the phase change memoryunits are isolated from one another through the isolation material layers. In the phase change memory of the invention, the phase change material and the OTS material are limited in the same space bythe isolation material, and the transition material layers are located between the phase change material and the electrode material, between the phase change material and the OTS material and betweenthe OTS material and the electrode material, so that the phase change memory has the characteristics of high density, high speed, low power consumption and long life.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a phase-change memory and a manufacturing method thereof. Background technique [0002] In the traditional computing architecture, the significant performance difference between DRAM and NAND Flash makes the response efficiency of the north-south bridge data exchange in large data centers and computers and other equipment low and the energy consumption remains high. In recent years, the industrial and scientific circles have invested a lot of manpower, material resources, and financial resources in the research of new storage technologies. Large enterprises represented by IBM, Intel, Micron, and Samsung are all seeking new high-performance storage technologies, which are called storage memory. (SCM-Storage Class Memory), fill the performance gap between DRAM and Flash, or partially replace DRAM and Flash, to build a new storage architecture to improve overall performance. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more