Method for preparing AgInS2 quantum dot sensitized TiO2 photoelectrode with In2S3 used as buffer layer

A technology of quantum dot sensitization and buffer layer, which is applied in the direction of photosensitive equipment, capacitor electrodes, capacitor parts, etc., can solve the problems of complex preparation process and high cost, and achieve the effect of simple preparation process, low cost and simple process

Inactive Publication Date: 2015-02-25
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In 2 S 3 The buffer layer is mostly prepared on the pre-synthesized electrode by chemical bath deposition, high temperature coating and other methods, the preparation process is more complicated and the cost is higher

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Weigh 2.0g nano-TiO 2 The powder (mixed crystal type, the weight ratio of anatase and rutile is about 80 / 20) is put into a muffle furnace and roasted at 200° C. for 3 hours. TiO 2 The particle diameter of the nanopowder is 25 nanometers. Add the pretreated nano-TiO in 60mL absolute ethanol 2 Powder, stirred, then added 1.0g deionized water, 0.5g acetic acid and 6.0g polyethylcellulose. After ball milling for 24 hours, use a rotary evaporator to distill off excess ethanol at 50°C under reduced pressure to obtain TiO 2 Viscous slurry. Prepared TiO 2 The viscous slurry is coated on the cleaned glass substrate by scraping method, the coating thickness is about 10 μm, and the coating size is 3 cm 2 . Then it was fired at 480°C for 1h with a heating rate of 1°C / min to obtain TiO on the glass substrate. 2 porous membrane.

[0024] Porous TiO 2 After dipping the electrode in 0.02mol / L silver acetate aqueous solution for 30s, wash it with deionized water and ethanol, t...

Embodiment 2

[0028] Weigh 2.0g nano-TiO 2 The powder (mixed crystal type, the weight ratio of anatase and rutile is about 80 / 20) is put into a muffle furnace and roasted at 200° C. for 3 hours. TiO 2 The particle diameter of the nanopowder is 25 nanometers. Add the pretreated nano-TiO in 60mL absolute ethanol 2 Powder, stirred, then added 1.0g deionized water, 0.5g acetic acid and 6.0g polyethylcellulose. After ball milling for 24 hours, use a rotary evaporator to distill off excess ethanol at 50°C under reduced pressure to obtain TiO 2 Viscous slurry. Prepared TiO 2 The viscous slurry is coated on the cleaned glass substrate by scraping, the coating thickness is about 8 μm, and the coating size is 3 cm 2 . Then it was fired at 480°C for 1h with a heating rate of 1°C / min to obtain TiO on the glass substrate. 2 porous membrane.

[0029] Porous TiO 2 After dipping the electrode in 0.02mol / L silver nitrate aqueous solution for 30s, wash it with deionized water and ethanol, then dip ...

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PUM

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Abstract

The invention relates to a method for preparing an AgInS2 quantum dot sensitized TiO2 photoelectrode with In2S3 used as a buffer layer. The method comprises the steps that (1) a TiO2 porous membrane is prepared on an FTO conducting glass matrix; (2) an Ag2S quantum dot sensitized TiO2 electrode is obtained through the continuous ionic adsorption reaction method; (3) on the Ag2S quantum dot / TiO2 electrode, the chemical bath deposition and reaction of In2S3 is used for synthesizing the AgInS2 quantum dot sensitized TiO2 photoelectrode with In2S3 used as the buffer layer in a one-step in-situ mode. The method is simple in preparing process and low in requirement for equipment, and common organic solvents used for semiconductor quantum dot synthesis are not involved; the photoelectrode is composed of AgInS2, In2S3 and TiO2 which are low in toxicity, has high photoelectric response performance when being applied to solar cells, and has potential application prospects.

Description

technical field [0001] The invention belongs to quantum dot sensitized TiO 2 The field of photoelectrodes, especially involving an In 2 S 3 AgInS for the buffer layer 2 Quantum dot sensitized TiO 2 Preparation method of photoelectrode. Background technique [0002] At present, the research on semiconductor quantum dots has entered an unprecedented heat, and its application in the field of optoelectronics is the center of current focus. However, the quantum dots (QDs) used in the current major research progress are Cd, Pb and other elements, which do not meet the current strategic requirements for environmentally friendly and environmentally friendly materials, thus limiting their applications in many fields. The new ternary I-II-VI semiconductor quantum dots not only have the excellent performance of quantum dots, but also have the advantages of low toxicity and environmental protection, and are expected to replace Cd-based quantum dots in various applications. AgInS ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/04H01G9/20
Inventor 李耀刚王远强王宏志张青红
Owner DONGHUA UNIV
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