62 results about "Semiconductor quantum dots" patented technology

The invention relates to the technical field of quantum computing, and provides a linear complexity quantum state preparation method based on tensor decomposition and a quantum circuit construction system.The high-dimensional tensor is decomposed into a series of low-rank core tensors through continuous singular value decomposition, each core tensor in a core tensor sequence is expanded into a unitary matrix, and the unitary matrix is used as a quantum circuit; the unitary matrix sequence is mapped to quantum lines coupled using adjacent qubits, and the quantum lines are run to prepare a target quantum state. Based on this, the line generated by the method can approximately or accurately prepare a target quantum state only by coupling adjacent quantum bits, and is perfectly adaptive to quantum chips of linear or grid topologies such as superconducting and semiconductor quantum dots and the like.

The present invention addresses the problem of providing: a high-speed Coulomb blockade thermometer that can reduce the effects of self-heating and achieve a high S / N; and a quantum computer that uses the Coulomb blockade thermometer.　A preferred embodiment of the present invention is a quantum computer that comprises a quantum bit array chip that forms semiconductor quantum dots, a cooling device that cools the quantum bit array chip, a Coulomb blockade thermometer that is provided inside the cooling device, a temperature control unit that controls a heat source that is inside the cooling device, and a storage unit that stores a conversion table for converting the conductance of the Coulomb blockade thermometer to temperature. The temperature control unit applies a constant voltage to the Coulomb blockade thermometer to measure the conductance, references the conversion table to convert the measured conductance to temperature information, and controls the heat source on the basis of the temperature information.

The invention provides a high-crystallinity near-infrared emission wurtzite CdS quantum dot / Zn < 2 + > modified CdS quantum dot as well as a preparation method and application thereof, and belongs to the technical field of semiconductor quantum dots. The preparation method comprises the following steps: mixing cadmium oxide, a very small amount of zinc acetate, oleic acid and octadecene, heating for degassing, heating to a reaction temperature, and adding an S-ODE precursor for reaction to obtain the zinc-modified wurtzite CdS quantum dot. The CdS quantum dots synthesized under the condition of high concentration are of a wurtzite structure and have high crystallinity, the particle size is remarkably increased, a small amount of zinc acetate is added, disordered nucleation and growth processes under a high-concentration reaction system are effectively separated through a surface adsorption process, and the monodispersed wurtzite CdS quantum dots are obtained. According to the invention, the LED device is prepared by integrating the optimized CdS quantum dots and the 450nm purple light chip, and the dual functions of visible light illumination and night vision application are realized.

The preparation method of the high-temperature-creep-resistant nano-composite pressure vessel steel comprises the following steps that a lead sulfide precursor is dissolved in an organic solvent, and heating reaction is conducted under the inert gas condition to generate lead sulfide quantum dots; mixing quantum dots with amphiphilic molecules, and performing ultrasonic emulsification to form a quantum dot colloidal solution; mixing the quantum dot colloidal solution with supercritical carbon dioxide to form a homogeneous fluid phase; the steel matrix is placed in a high-pressure reaction kettle, the homogeneous fluid phase is introduced, permeation is conducted for 2-4 h under the conditions that the pressure is 10-15 MPa and the temperature is 50-70 DEG C, and a steel billet is obtained; the steel billet is placed in hot isostatic pressing equipment, heat preservation and pressure maintaining are conducted for 1-2 h in the inert gas environment under the conditions that the pressure ranges from 150 MPa to 200 MPa and the temperature ranges from 800 DEG C to 900 DEG C, and then the steel billet is cooled to the room temperature; semiconductor quantum dots are introduced into a metal matrix, atomic-scale interface strengthening is achieved through the quantum effect and the supercritical fluid permeation technology, and the steady-state creep rate of the material at the temperature of 600 DEG C can be reduced to 1 / 10 of that of a traditional process by combining the microcosmic strengthening advantage of the quantum dots and the macroscopic permeation advantage of supercritical fluid.

A semiconductor film including an aggregate of semiconductor quantum dots containing an In element and a Group 15 element, and a ligand coordinated to the semiconductor quantum dots, in which the Group 15 element includes an Sb element, the ligand includes a ligand containing a halogen element, the semiconductor film contains a nitrogen element, and a molar ratio of the nitrogen element to the In element is 0.01 to 0.10. A photodetector and an image sensor using the above-described semiconductor film.

The invention relates to the technical field of low-dimensional semiconductor quantum dot materials and devices, in particular to an InAs / InP quantum dot material with the wave band of 1-2 microns and a preparation method and application of the InAs / InP quantum dot material with the wave band of 1-2 microns. The preparation method comprises the following steps that firstly, in-situ annealing treatment is conducted on an InP substrate in an epitaxial growth device; then, an InP buffer layer is deposited on the InP substrate; depositing InAs quantum dots on the InP buffer layer to form an InAs quantum dot layer; growing a first cover layer; the material of the first cover layer is GaAs, InGaAs or InAlGaAs; the thickness of the first cover layer is 2-5 nm; raising the temperature, and carrying out In-flush treatment; finally, growing a second cover layer; and the second cover layer is made of InP. The InAs quantum dot structure coated by the first cover layer is prepared by adopting the metal organic chemical vapor deposition technology, the In-flush technology is introduced in the growth of the cover layer, the material and the thickness of the first cover layer are cooperatively adjusted, continuous and controllable red shift of the light-emitting wavelength of the quantum dot can be realized under the condition that the intrinsic size of the quantum dot is not changed, and the light-emitting efficiency of the quantum dot is improved. And a key material basis is provided for a high-performance near-infrared photoelectric device.

The present application relates to the technical field of quantum computer, in particular to a kind of quality judging method and device for simulating semiconductor quantum dot device, the present application simulates semiconductor quantum dot device by simulation mode, then, determine the multiple wave functions corresponding to the limit potential distribution diagram of the simulated semiconductor quantum dot device, and construct the wave function image corresponding to multiple wave functions;Whether the simulated semiconductor quantum dot device can form quantum dot is judged by determining the state of the wave function corresponding to the limit potential of simulated semiconductor quantum dot device, when the simulated semiconductor quantum dot device can form quantum dot, the quality of this simulated semiconductor quantum dot device meets the requirements, can be produced according to the simulated semiconductor quantum dot device, improve the yield of semiconductor quantum dot device in actual production, save cost.

A semiconductor quantum dot upconversion fluorescence spectrum detection system, including laser, the pulsed laser emitted by laser is transmitted to the half mirror after being expanded by first and second lenses in turn, and the pulsed laser is divided into two light paths; in the reflected light path, the incident pulsed laser passing through the objective lens is focused on the surface of the semiconductor quantum dot sample, the semiconductor quantum dot sample radiates upconversion fluorescence after being excited, and the upconversion fluorescence and the reflected pulsed laser of the surface of the semiconductor quantum dot sample are transmitted to the half mirror through the objective lens into the transmitted light path after acting on the fluorescence enhancement substrate; in the transmitted light path, the transmitted fluorescence and the reflected pulsed laser passing through the half mirror enter the third lens through the optical filter, and then enter the spectrometer and EMCCD camera for fluorescence spectrum collection, the spectrometer and EMCCD camera are regulated and data processed by using the electronic computer, and the fluorescence spectrum of the semiconductor quantum dot sample is displayed, and the present application provides technical support for temperature detection in the living cells of biological organisms.

A photodetector element has a photoelectric conversion layer containing aggregates of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing aggregates of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, where the ligand L2 includes a ligand represented by any one of Formulae (A) to (C).

This disclosure provides a semiconductor quantum dot feedback control method and system based on FPGA. The method includes: S1: performing linear scanning and acquiring response data of a single-electron transistor under different bias voltages; S2: determining the operating point with the steepest transconductance by optimization and outputting the optimal bias voltage corresponding to the operating point to lock the optimal operating point of the single-electron transistor; S3: extracting the high and low level distribution characteristics of random telegraph signals by acquiring signal data of the single-electron transistor in real time; S4: dynamically adjusting the bias voltage applied to the quantum dot according to the high and low level distribution characteristics to calibrate the offset between the quantum dot energy level and the source-drain Fermi level.

The camera of the present disclosure includes a semiconductor substrate, a plurality of pixel electrodes above the semiconductor substrate and electrically connected to the semiconductor substrate, a counter electrode above the plurality of pixel electrodes, a first photoelectric conversion layer between the plurality of pixel electrodes and the counter electrode, and at least one first light shielding body in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer includes semiconductor quantum dots that absorb light in a first wavelength range and a covering material that covers the semiconductor quantum dots, absorbs light in a second wavelength range, and emits fluorescent light in a third wavelength range. The at least one first light shielding body absorbs or reflects light in at least a portion of the wavelengths in the second wavelength range.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.

The present application relates to a kind of for detecting colloidal semiconductor quantum dot spectroelectrochemical device and method.The device combines electrochemical workstation and spectroscopic detection system, for real-time monitoring the structural change of molecule and material in electrochemical reaction process.The core technology includes the accurate control of the redox state of sample, and obtains key molecular information by various spectroscopic analysis means (such as ultraviolet-visible absorption spectrum, infrared spectrum, raman spectrum etc.).Device design adopts modular structure, includes reference electrode, counter electrode and working electrode, to ensure the stability of reaction and the reliability of data.The method is suitable for the identification of electrocatalyst active site, the electronic structure regulation of material, the research of interface chemical reaction mechanism and the like.

This invention discloses a method for preparing a band-tunable CoFe@C / ZnO coral-structured lightweight microwave absorbing material, belonging to the field of electromagnetic functional materials. The invention first obtains a coral-like porous carbon matrix embedded with CoFe nanocrystals through solvothermal and high-temperature heat treatment. Subsequently, based on interface modulation, ZnO quantum dots rich in oxygen vacancies are in situ loaded on the matrix surface, ultimately obtaining a semiconductor quantum dot-modified CoFe@C / ZnO composite material. Based on a lightweight coral-like CoFe@C matrix, this invention introduces semiconductor quantum dot modification through interface modulation to optimize input impedance and improve electromagnetic wave incident rate. Simultaneously, relying on the constructed multiphase heterogeneous interface to enhance synergistic loss, the material achieves efficient and band-tunable electromagnetic wave absorption performance in the 2-18 GHz frequency band, while maintaining its overall lightweight advantage.

The present invention discloses a bionic optoelectronic reservoir neuromorphic device and a preparation method thereof. The optoelectronic reservoir neuromorphic device includes: a substrate; a seed layer formed on the substrate; an isolation layer formed on the seed layer; an oxide nanowire network formed on the surface of the isolation layer, serving as an electronic reservoir, constructing neuron nodes in the reservoir by utilizing the randomly arranged characteristics of the grown oxide nanowires, and realizing randomly connected reservoir neurons similar to the human brain by means of the memristive behavior of the oxide nanowires; semiconductor quantum dots with optoelectronic response, grown on the oxide nanowire network, modifying the device to expand the response of the device from pure electricity to optoelectronic response, and realizing the perception function of optical signals; and a working electrode grown on the nanowire network.

The invention provides a preparation method of a large-size CuInS2 quantum dot. The invention belongs to the field of semiconductor luminescent nano materials, and provides a novel synthesis method for obtaining a CuInS2 quantum dot material with the size of 9.16 nm, the photoluminescence peak position of 1120 nm and the electroluminescence peak position of 1045 nm. The n-dodecanethiol is used as a sulfur source, the cuprous iodide is used as a copper source, the indium acetate is used as an indium source, the operation is convenient, the large-size near-infrared stable luminous CuInS2 material can be obtained through one-time heating, and the material has the advantages of wide spectrum and low toxicity. The large-size CuInS2 semiconductor quantum dot material prepared by the preparation method disclosed by the invention can obtain near-infrared luminescence under the excitation of ultraviolet wavelength. The synthesis process is simple, and stable quantum dots can be obtained without further modification treatment.

The invention relates to the technical field of semiconductor quantum dots, and discloses a multifunctional semiconductor quantum dot and a synthesis method and application thereof.The synthesis method comprises the steps that according to the proportion of a chemical formula Cs (AaBbCcDdEe) Cl6, chlorides of Cs, A, B, C, D and E are weighed to serve as raw materials; carrying out primary ball milling on the raw materials, adding oleylamine and oleic acid, and carrying out secondary ball milling; and dispersing the ball-milled powder in toluene, adding an inorganic ligand, stirring to obtain a solid-liquid, carrying out solid-liquid separation, and drying, crushing and grinding the separated solid material to obtain the multifunctional semiconductor quantum dot finished product. According to the invention, the high-entropy two-dimensional double-perovskite long-afterglow material integrating multiple functions of luminescence and photocatalysis is synthesized through a solid-liquid combined two-step method. Organic and inorganic ligand bonding is respectively carried out in solid and liquid synthesis environments, so that the luminescence property and the stability are improved, the exciton lifetime is prolonged, and light-source-free self-sufficient photocatalysis is realized.

The invention discloses a lamellar antibacterial fiber and a preparation method and application thereof, and belongs to the technical field of functional textile materials, the fiber has a unique core-sheath structure, and a sheath layer comprises a two-dimensional lamellar material, a photosensitive semiconductor quantum dot, a metal ion slow-release material and a metal ion slow-release material. A uniform micro-current environment can be formed on the surface of the fiber under the irradiation of visible light; the metal ion sustained-release material provides basic ion antibiosis, and micro-current and metal ions generate a synergistic antibacterial effect, so that efficient, broad-spectrum and long-acting inhibition on bacteria is realized; according to the preparation method, the functional master batch is prepared through double-screw melt blending, then one-time forming is conducted through the skin-core composite spinning technology, and the fiber is durable in antibacterial function, resistant to washing and mild in use condition.

The application provides a solar blind filter and a preparation method and application thereof. The solar blind filter comprises a first filter and a second filter which are stacked, the first filter comprises an ultraviolet transmission layer and an ultraviolet absorption layer which are stacked, and the second filter comprises a visible light absorption layer. The ultraviolet absorption layer is arranged between the ultraviolet transmission layer and the second filter, and the ultraviolet absorption layer comprises inorganic semiconductor quantum dots. The solar blind filter provided by the application has a relatively thin thickness, and has excellent selectivity and high transmittance.

The application discloses a metal nanoparticle colloid-quantum dot printing ink doping preparation method and belongs to the technical field of photoelectricity. The method is characterized in that: firstly, silver ions are reduced into nanoparticles, and then, silica is wrapped outside the silver nanoparticles to prepare a silica-wrapped silver nanoparticle colloid solution; then, CdSe quantum dot ink is prepared; the silica-wrapped silver nanoparticle colloid solution and the CdSe quantum dot ink are mixed at a proportion of 1-5:100 in volume ratio to prepare metal nanoparticle colloid-quantum dot ink. The metal nanoparticle colloid-quantum dot ink prepared by the method successfully improves the light efficiency conversion performance of semiconductor quantum dot ink, can generate more visible light output under the same input electric energy condition, and simultaneously reduces energy loss. The technical progress brings obvious performance improvement for QLED lighting and display application.

The invention discloses a modified hollow glass bead and a preparation method and application thereof, and relates to the technical field of material modification.The modified hollow glass bead comprises a hollow glass bead carrier and semiconductor quantum dots loaded on the surface of the hollow glass bead carrier, and the semiconductor quantum dots pass through 1, 2, 3, 4-tetramethyl-1, 3-pentanediol monoisobutyrate. A 1, 2, 3-triazole structure is connected to the hollow glass carrier, and the semiconductor quantum dots are directionally arranged along the same direction. In the modified hollow glass bead provided by the invention, the hollow glass bead carrier is connected with the semiconductor quantum dots through the 1, 2, 3-triazole structure, so that the semiconductor quantum dots are not in direct contact with the carrier, the light response effect of the semiconductor quantum dots is conveniently exerted, and meanwhile, the semiconductor quantum dots arranged along the same direction not only have higher fluorescence efficiency, but also have higher fluorescence intensity. In addition, the surface defects are reduced, and the hydrophobicity of the modified hollow glass beads is improved.

A quantum electronic device with a charge detector for determining a property of a qubit, and a method for determining said property. The invention concerns to a quantum electronic device with at least one charge detector (3) configured to determine a property of a semiconductor quantum dot (5), and a method for determine a property of a semiconductor quantum dot (5) controlled by a plunger gate (13). The charge detector (3) is arranged at or in vicinity of the semiconductor quantum dot (5). The charge detector is a single electron box, SEB, detector including a conductive island (10) separated from an electrode (9) by means of a quantum tunnel barrier (11), wherein the quantum tunnel barrier is configured to facilitate electron tunneling indicative of quantum state variations. The tunneling is used to infer a state of a qubit associated with the quantum dot, wherein the electrode is connected to a circuitry configured to enable readout of the state of the qubit associated with the quantum dot.

The invention discloses a semiconductor quantum device and a preparation method thereof, and relates to the field of quantum devices, and the semiconductor quantum device comprises a semiconductor-on-insulator substrate which comprises a semiconductor substrate, an insulating layer and an epitaxial base layer which are stacked in sequence; the insulating layer comprises a central region and an edge region surrounding the central region; etching the edge region to remove the insulating layer so as to form a suspension gap on the lower surface of the epitaxial base layer for releasing the stress of an interface between the epitaxial base layer and the insulating layer; the insulating layer in the central area is reserved as a supporting body for bearing the epitaxial base layer; the silicon-germanium heterojunction is arranged on the upper surface of the epitaxial base layer based on the suspension gap; and the gate structure is arranged on the upper surface of the silicon-germanium heterojunction, and quantum dots are formed in the silicon-germanium heterojunction based on the gate structure. According to the invention, dislocation caused by interface stress can be reduced based on the suspension gap, the epitaxial quality of the silicon-germanium heterojunction can be further improved, the growth time of the relaxation epitaxial layer can be shortened, and the performance of the device can be further improved.

The invention relates to the technical field of nano material preparation, in particular to a method for preparing CuInS ternary chalcogenide semiconductor quantum dots, which is characterized by comprising the following steps: (1) precursor configuration, (2) ultraviolet-assisted multi-stage thermal growth, and (3) post-treatment: generating a photo-clipping effect by introducing ultraviolet light irradiation, shortening the chain length of a surface ligand, and obtaining the CuInS ternary chalcogenide semiconductor quantum dots. The CuInS quantum dot with the pure-phase chalcopyrite structure and the preparation method thereof have the advantages that the CuInS quantum dot with the pure-phase chalcopyrite structure and fluorescence QY exceeding 80% is obtained, the quantum yield is high, non-radiative recombination centers are reduced or eliminated, the crystallinity is high, the phase purity is high, components are accurate and the like, and intermediates (such as metal thiolate mesocrystal phases) in the synthesis process are regulated and controlled.

The invention relates to a method for measuring electrical properties of a semiconductor quantum dot material based on free carrier absorption. Comprising the following steps that pumping laser and continuous detection laser are sequentially emitted to the same position of a semiconductor sample to be detected, the power of the pumping laser is changed, the concentration of free carriers is subjected to nonlinear change, the nonlinear characteristic of the free carriers is closely related to the characteristics of excitons and carriers in quantum dots, and the concentration of the free carriers is detected. Transmitting light signal data at different powers are collected through a photoelectric detector, and the obtained data are recorded and processed to obtain electrical characteristic parameters of the detected semiconductor sample. The method is not influenced by the response time or bandwidth limitation of the photoelectric detector, the data processing is simple, and the measurement precision is high; the measuring device is simpler, and the equipment cost is low; the method is wide in application range, can be used for measuring quantum dot materials with deep energy level traps, and is particularly suitable for measuring quantum dot materials with more shallow energy level traps.

A semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal made of a first compound M1C1, a core layer, and a barrier layer grown in such order. The seed crystal has first regions that are inactive with oxygen, and second regions that are easily reactive with oxygen. The core layer is made of the first compound M1C1, and has first and second areas. Each of the first areas is positioned on a corresponding one of the first regions. Each of the second areas is positioned on a corresponding one of the second regions. Each of the first areas has a thickness greater than that of each of the second areas. The barrier layer is made of a second compound selected from M1X1 and X2C1. The shell is grown on the barrier layer, and is made of a third compound M2C2.

The invention discloses an aircraft infrared stealth method based on semiconductor quantum dots, and the method comprises the following steps: selecting semiconductor quantum dots and a substrate material, and calculating the band gap of the quantum dots according to the band gap of the material; the infrared environment around the aircraft is detected in real time, a background infrared spectrum is obtained, a quantum dot emission spectrum is modeled according to a quantum dot material band gap, and a regulation and control controller calculates an external voltage according to the background infrared spectrum and the quantum dot emission spectrum by using a spectrum matching algorithm to generate a voltage regulation and control instruction; the surface temperature of the aircraft is obtained in real time, voltage dynamic compensation is carried out according to the temperature, a regulation and control instruction is updated according to the voltage regulation and control instruction and the voltage dynamic compensation, and an actuator executes the voltage regulation and control instruction; and evaluating the difference between the estimated stealth effect and the actual measurement result of the aircraft, and carrying out optimization adjustment. According to the real-time background spectrum and temperature of the aircraft, the emission spectrum of the coating quantum dots of the aircraft is dynamically adjusted, and the stealth effect of the aircraft under the infrared condition is guaranteed.

This invention discloses a method for preparing semiconductor ionogel microspheres, comprising the following steps: dissolving acrylamide (AM), a crosslinking agent, an ionic liquid, and an aqueous solution of CdS quantum dots by stirring to obtain an aqueous phase; mixing an emulsifier with cyclohexane and stirring to prepare an oil phase; adding the aqueous phase dropwise to the oil phase, sonicating, adding an initiator, heating in an oil bath to fully react, vacuum drying, washing, and then drying again to obtain semiconductor ionogel microspheres. This invention uses acrylamide as a monomer to prepare reverse emulsion microspheres and uses an ionic liquid to enhance the catalytic activity of CdS quantum dot semiconductors. The presence of the ionic liquid significantly improves the ability of semiconductor quantum dots in photocatalytic applications. The preparation method of this invention is simple, has a short preparation cycle, and low equipment cost, making it suitable for large-scale production.

The present application proposes a semiconductor quantum dot based on protein assembly and peptide anchoring, its preparation method and application in the field of artificial photocatalysis, which relates to the field of bionanomaterial technology. The preparation method is as follows: MBP is fused to the N-terminus of the sequence of the cyclic protein SP1, and a double histidine group is introduced by mutation to construct a fusion plasmid, which is transformed into the Escherichia coli BL-21 strain for expression, and a protein mutant solution is obtained after purification; the protein mutant is incubated with CdCl2 and Na2S in sequence to obtain an SP1-CdS quantum dot hybrid; or the protein mutant is first incubated with an ion chelator, and then the above-mentioned CdCl2 and Na2S incubation is repeated to obtain an SP1-CdS quantum dot hybrid assembly. The product is highly designable and modifiable, can be adapted to a variety of electron sacrificial agents to achieve efficient hydrogen production, has high stability and can arrange photosensitizers and photocatalytic centers in an orderly and fixed manner, and has great development prospects and application potential.