9 results about "Semiconductor quantum dots" patented technology

A semiconductor film including an aggregate of semiconductor quantum dots containing an In element and a Group 15 element, and a ligand coordinated to the semiconductor quantum dots, in which the Group 15 element includes an Sb element, the ligand includes a ligand containing a halogen element, the semiconductor film contains a nitrogen element, and a molar ratio of the nitrogen element to the In element is 0.01 to 0.10. A photodetector and an image sensor using the above-described semiconductor film.

This disclosure provides a semiconductor quantum dot feedback control method and system based on FPGA. The method includes: S1: performing linear scanning and acquiring response data of a single-electron transistor under different bias voltages; S2: determining the operating point with the steepest transconductance by optimization and outputting the optimal bias voltage corresponding to the operating point to lock the optimal operating point of the single-electron transistor; S3: extracting the high and low level distribution characteristics of random telegraph signals by acquiring signal data of the single-electron transistor in real time; S4: dynamically adjusting the bias voltage applied to the quantum dot according to the high and low level distribution characteristics to calibrate the offset between the quantum dot energy level and the source-drain Fermi level.

The present application relates to a kind of for detecting colloidal semiconductor quantum dot spectroelectrochemical device and method.The device combines electrochemical workstation and spectroscopic detection system, for real-time monitoring the structural change of molecule and material in electrochemical reaction process.The core technology includes the accurate control of the redox state of sample, and obtains key molecular information by various spectroscopic analysis means (such as ultraviolet-visible absorption spectrum, infrared spectrum, raman spectrum etc.).Device design adopts modular structure, includes reference electrode, counter electrode and working electrode, to ensure the stability of reaction and the reliability of data.The method is suitable for the identification of electrocatalyst active site, the electronic structure regulation of material, the research of interface chemical reaction mechanism and the like.

This invention discloses a method for preparing a band-tunable CoFe@C / ZnO coral-structured lightweight microwave absorbing material, belonging to the field of electromagnetic functional materials. The invention first obtains a coral-like porous carbon matrix embedded with CoFe nanocrystals through solvothermal and high-temperature heat treatment. Subsequently, based on interface modulation, ZnO quantum dots rich in oxygen vacancies are in situ loaded on the matrix surface, ultimately obtaining a semiconductor quantum dot-modified CoFe@C / ZnO composite material. Based on a lightweight coral-like CoFe@C matrix, this invention introduces semiconductor quantum dot modification through interface modulation to optimize input impedance and improve electromagnetic wave incident rate. Simultaneously, relying on the constructed multiphase heterogeneous interface to enhance synergistic loss, the material achieves efficient and band-tunable electromagnetic wave absorption performance in the 2-18 GHz frequency band, while maintaining its overall lightweight advantage.

This invention proposes a narrow-emission ultraviolet gallium sulfide quantum dot material and its synthesis method, belonging to the field of semiconductor quantum dot material technology. The method employs a one-pot synthesis strategy and introduces a specific passivating agent into the reaction system. By precisely controlling the reaction conditions and the amount of passivating agent, high-purity ultraviolet-emitting gallium sulfide quantum dots with an emission peak at 392 nm and a half-maximum width at half-maximum (HWHM) of 34 nm were successfully prepared. This synthesis method significantly reduces the HWHM of gallium sulfide quantum dots and improves their spectral purity. This invention provides an effective method for preparing ultraviolet environmentally friendly quantum dots with high color purity, demonstrating great application potential in cutting-edge fields such as lighting and full-color displays.

This invention discloses a semiconductor quantum dot, a method for preparing a single-photon source, and a quantum signal detection system. The method prepares InAs / GaAs quantum dots using molecular beam epitaxy in the Stranski-Krastanow mode, and then combines the prepared semiconductor quantum dots with a microcavity to form a single-photon source. The quantum signal detection system includes a semiconductor quantum dot single-photon source, a laser pump source, a wavelength division multiplexing (WDM) fiber, and an HBT interferometer. The input end of the WDM fiber is connected to the laser pump source, and the output end is connected to the HBT interferometer. Laser light excited by the laser pump source is perpendicularly irradiated onto the surface of the semiconductor quantum dot single-photon source through the WDM fiber, causing electrons to transition to an excited state and radiate recombination to emit photons. After emission, the quantum dot emits light, which is then collected at the end face of the same fiber. The HBT interferometer measures the output signal. This invention allows for the adjustment of the luminescence properties by doping with appropriate metal elements, enabling precise detection of the single-photon signal output from the quantum dot single-photon source.

This invention discloses a method for continuous microwave vulcanization and seamless corner molding of automotive sealing strips, relating to the field of automotive parts manufacturing technology. It involves mixing a surface-functionalized semiconductor quantum dot microwave sensitizer and a microencapsulated activator system with an EPDM rubber substrate to prepare a main intelligent composite material. A special digital material filament containing a depolymerizing agent and co-frequency heterogeneous quantum dots is prepared for the corners. After precision extrusion and shaping, the main intelligent composite material is fed into a dynamic microwave vulcanization chamber. Through quantum dot-catalyzed selective microwave vulcanization, continuous and uniform vulcanization of the sealing strip's main body is achieved. This invention achieves seamless molecular-level fusion between the corners and the main body, completely eliminating physical seams found in traditional processes, significantly improving the sealing performance and long-term durability of the sealing strip. The synergistic use of quantum dot-catalyzed selective microwave vulcanization and multi-energy field co-vulcanization ensures uniform vulcanization of the sealing strip's main body and corner areas, resulting in significantly improved performance consistency.

This semiconductor quantum dot composition exhibits a narrow optical luminescence linewidth and / or faster PL decay.

Biomineralization—the synthesis of inorganic materials using proteins—has recently gained interest as a low cost, green route for the production of metal chalcogenide semiconductor nanocrystals. Typical biomineralization approaches rely on proteins or biomolecules identified from organisms which possess a native biomineralization response. Disclosed herein is an alternative biomineralization approach for synthesizing metal chalcogenide nanocrystals which uses an artificially designed de novo protein. De novo proteins are non-natural proteins, allowing for facile modification of the protein through the tuning of amino acids within the sequence. This de novo protein was employed to produce size-controlled populations of semiconductor nanocrystals, with properties consistent with those produced using traditional routes.