42 results about "Semiconductor quantum dots" patented technology

The invention relates to the technical field of quantum computing, and provides a linear complexity quantum state preparation method based on tensor decomposition and a quantum circuit construction system.The high-dimensional tensor is decomposed into a series of low-rank core tensors through continuous singular value decomposition, each core tensor in a core tensor sequence is expanded into a unitary matrix, and the unitary matrix is used as a quantum circuit; the unitary matrix sequence is mapped to quantum lines coupled using adjacent qubits, and the quantum lines are run to prepare a target quantum state. Based on this, the line generated by the method can approximately or accurately prepare a target quantum state only by coupling adjacent quantum bits, and is perfectly adaptive to quantum chips of linear or grid topologies such as superconducting and semiconductor quantum dots and the like.

The invention provides a high-crystallinity near-infrared emission wurtzite CdS quantum dot / Zn < 2 + > modified CdS quantum dot as well as a preparation method and application thereof, and belongs to the technical field of semiconductor quantum dots. The preparation method comprises the following steps: mixing cadmium oxide, a very small amount of zinc acetate, oleic acid and octadecene, heating for degassing, heating to a reaction temperature, and adding an S-ODE precursor for reaction to obtain the zinc-modified wurtzite CdS quantum dot. The CdS quantum dots synthesized under the condition of high concentration are of a wurtzite structure and have high crystallinity, the particle size is remarkably increased, a small amount of zinc acetate is added, disordered nucleation and growth processes under a high-concentration reaction system are effectively separated through a surface adsorption process, and the monodispersed wurtzite CdS quantum dots are obtained. According to the invention, the LED device is prepared by integrating the optimized CdS quantum dots and the 450nm purple light chip, and the dual functions of visible light illumination and night vision application are realized.

The preparation method of the high-temperature-creep-resistant nano-composite pressure vessel steel comprises the following steps that a lead sulfide precursor is dissolved in an organic solvent, and heating reaction is conducted under the inert gas condition to generate lead sulfide quantum dots; mixing quantum dots with amphiphilic molecules, and performing ultrasonic emulsification to form a quantum dot colloidal solution; mixing the quantum dot colloidal solution with supercritical carbon dioxide to form a homogeneous fluid phase; the steel matrix is placed in a high-pressure reaction kettle, the homogeneous fluid phase is introduced, permeation is conducted for 2-4 h under the conditions that the pressure is 10-15 MPa and the temperature is 50-70 DEG C, and a steel billet is obtained; the steel billet is placed in hot isostatic pressing equipment, heat preservation and pressure maintaining are conducted for 1-2 h in the inert gas environment under the conditions that the pressure ranges from 150 MPa to 200 MPa and the temperature ranges from 800 DEG C to 900 DEG C, and then the steel billet is cooled to the room temperature; semiconductor quantum dots are introduced into a metal matrix, atomic-scale interface strengthening is achieved through the quantum effect and the supercritical fluid permeation technology, and the steady-state creep rate of the material at the temperature of 600 DEG C can be reduced to 1 / 10 of that of a traditional process by combining the microcosmic strengthening advantage of the quantum dots and the macroscopic permeation advantage of supercritical fluid.

A semiconductor film including an aggregate of semiconductor quantum dots containing an In element and a Group 15 element, and a ligand coordinated to the semiconductor quantum dots, in which the Group 15 element includes an Sb element, the ligand includes a ligand containing a halogen element, the semiconductor film contains a nitrogen element, and a molar ratio of the nitrogen element to the In element is 0.01 to 0.10. A photodetector and an image sensor using the above-described semiconductor film.

The invention relates to the technical field of low-dimensional semiconductor quantum dot materials and devices, in particular to an InAs / InP quantum dot material with the wave band of 1-2 microns and a preparation method and application of the InAs / InP quantum dot material with the wave band of 1-2 microns. The preparation method comprises the following steps that firstly, in-situ annealing treatment is conducted on an InP substrate in an epitaxial growth device; then, an InP buffer layer is deposited on the InP substrate; depositing InAs quantum dots on the InP buffer layer to form an InAs quantum dot layer; growing a first cover layer; the material of the first cover layer is GaAs, InGaAs or InAlGaAs; the thickness of the first cover layer is 2-5 nm; raising the temperature, and carrying out In-flush treatment; finally, growing a second cover layer; and the second cover layer is made of InP. The InAs quantum dot structure coated by the first cover layer is prepared by adopting the metal organic chemical vapor deposition technology, the In-flush technology is introduced in the growth of the cover layer, the material and the thickness of the first cover layer are cooperatively adjusted, continuous and controllable red shift of the light-emitting wavelength of the quantum dot can be realized under the condition that the intrinsic size of the quantum dot is not changed, and the light-emitting efficiency of the quantum dot is improved. And a key material basis is provided for a high-performance near-infrared photoelectric device.

The present application relates to the technical field of quantum computer, in particular to a kind of quality judging method and device for simulating semiconductor quantum dot device, the present application simulates semiconductor quantum dot device by simulation mode, then, determine the multiple wave functions corresponding to the limit potential distribution diagram of the simulated semiconductor quantum dot device, and construct the wave function image corresponding to multiple wave functions;Whether the simulated semiconductor quantum dot device can form quantum dot is judged by determining the state of the wave function corresponding to the limit potential of simulated semiconductor quantum dot device, when the simulated semiconductor quantum dot device can form quantum dot, the quality of this simulated semiconductor quantum dot device meets the requirements, can be produced according to the simulated semiconductor quantum dot device, improve the yield of semiconductor quantum dot device in actual production, save cost.

A semiconductor quantum dot upconversion fluorescence spectrum detection system, including laser, the pulsed laser emitted by laser is transmitted to the half mirror after being expanded by first and second lenses in turn, and the pulsed laser is divided into two light paths; in the reflected light path, the incident pulsed laser passing through the objective lens is focused on the surface of the semiconductor quantum dot sample, the semiconductor quantum dot sample radiates upconversion fluorescence after being excited, and the upconversion fluorescence and the reflected pulsed laser of the surface of the semiconductor quantum dot sample are transmitted to the half mirror through the objective lens into the transmitted light path after acting on the fluorescence enhancement substrate; in the transmitted light path, the transmitted fluorescence and the reflected pulsed laser passing through the half mirror enter the third lens through the optical filter, and then enter the spectrometer and EMCCD camera for fluorescence spectrum collection, the spectrometer and EMCCD camera are regulated and data processed by using the electronic computer, and the fluorescence spectrum of the semiconductor quantum dot sample is displayed, and the present application provides technical support for temperature detection in the living cells of biological organisms.

This disclosure provides a semiconductor quantum dot feedback control method and system based on FPGA. The method includes: S1: performing linear scanning and acquiring response data of a single-electron transistor under different bias voltages; S2: determining the operating point with the steepest transconductance by optimization and outputting the optimal bias voltage corresponding to the operating point to lock the optimal operating point of the single-electron transistor; S3: extracting the high and low level distribution characteristics of random telegraph signals by acquiring signal data of the single-electron transistor in real time; S4: dynamically adjusting the bias voltage applied to the quantum dot according to the high and low level distribution characteristics to calibrate the offset between the quantum dot energy level and the source-drain Fermi level.

The camera of the present disclosure includes a semiconductor substrate, a plurality of pixel electrodes above the semiconductor substrate and electrically connected to the semiconductor substrate, a counter electrode above the plurality of pixel electrodes, a first photoelectric conversion layer between the plurality of pixel electrodes and the counter electrode, and at least one first light shielding body in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer includes semiconductor quantum dots that absorb light in a first wavelength range and a covering material that covers the semiconductor quantum dots, absorbs light in a second wavelength range, and emits fluorescent light in a third wavelength range. The at least one first light shielding body absorbs or reflects light in at least a portion of the wavelengths in the second wavelength range.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

The present application relates to a kind of for detecting colloidal semiconductor quantum dot spectroelectrochemical device and method.The device combines electrochemical workstation and spectroscopic detection system, for real-time monitoring the structural change of molecule and material in electrochemical reaction process.The core technology includes the accurate control of the redox state of sample, and obtains key molecular information by various spectroscopic analysis means (such as ultraviolet-visible absorption spectrum, infrared spectrum, raman spectrum etc.).Device design adopts modular structure, includes reference electrode, counter electrode and working electrode, to ensure the stability of reaction and the reliability of data.The method is suitable for the identification of electrocatalyst active site, the electronic structure regulation of material, the research of interface chemical reaction mechanism and the like.

This invention discloses a method for preparing a band-tunable CoFe@C / ZnO coral-structured lightweight microwave absorbing material, belonging to the field of electromagnetic functional materials. The invention first obtains a coral-like porous carbon matrix embedded with CoFe nanocrystals through solvothermal and high-temperature heat treatment. Subsequently, based on interface modulation, ZnO quantum dots rich in oxygen vacancies are in situ loaded on the matrix surface, ultimately obtaining a semiconductor quantum dot-modified CoFe@C / ZnO composite material. Based on a lightweight coral-like CoFe@C matrix, this invention introduces semiconductor quantum dot modification through interface modulation to optimize input impedance and improve electromagnetic wave incident rate. Simultaneously, relying on the constructed multiphase heterogeneous interface to enhance synergistic loss, the material achieves efficient and band-tunable electromagnetic wave absorption performance in the 2-18 GHz frequency band, while maintaining its overall lightweight advantage.

The invention provides a preparation method of a large-size CuInS2 quantum dot. The invention belongs to the field of semiconductor luminescent nano materials, and provides a novel synthesis method for obtaining a CuInS2 quantum dot material with the size of 9.16 nm, the photoluminescence peak position of 1120 nm and the electroluminescence peak position of 1045 nm. The n-dodecanethiol is used as a sulfur source, the cuprous iodide is used as a copper source, the indium acetate is used as an indium source, the operation is convenient, the large-size near-infrared stable luminous CuInS2 material can be obtained through one-time heating, and the material has the advantages of wide spectrum and low toxicity. The large-size CuInS2 semiconductor quantum dot material prepared by the preparation method disclosed by the invention can obtain near-infrared luminescence under the excitation of ultraviolet wavelength. The synthesis process is simple, and stable quantum dots can be obtained without further modification treatment.

The invention discloses a lamellar antibacterial fiber and a preparation method and application thereof, and belongs to the technical field of functional textile materials, the fiber has a unique core-sheath structure, and a sheath layer comprises a two-dimensional lamellar material, a photosensitive semiconductor quantum dot, a metal ion slow-release material and a metal ion slow-release material. A uniform micro-current environment can be formed on the surface of the fiber under the irradiation of visible light; the metal ion sustained-release material provides basic ion antibiosis, and micro-current and metal ions generate a synergistic antibacterial effect, so that efficient, broad-spectrum and long-acting inhibition on bacteria is realized; according to the preparation method, the functional master batch is prepared through double-screw melt blending, then one-time forming is conducted through the skin-core composite spinning technology, and the fiber is durable in antibacterial function, resistant to washing and mild in use condition.

The application discloses a metal nanoparticle colloid-quantum dot printing ink doping preparation method and belongs to the technical field of photoelectricity. The method is characterized in that: firstly, silver ions are reduced into nanoparticles, and then, silica is wrapped outside the silver nanoparticles to prepare a silica-wrapped silver nanoparticle colloid solution; then, CdSe quantum dot ink is prepared; the silica-wrapped silver nanoparticle colloid solution and the CdSe quantum dot ink are mixed at a proportion of 1-5:100 in volume ratio to prepare metal nanoparticle colloid-quantum dot ink. The metal nanoparticle colloid-quantum dot ink prepared by the method successfully improves the light efficiency conversion performance of semiconductor quantum dot ink, can generate more visible light output under the same input electric energy condition, and simultaneously reduces energy loss. The technical progress brings obvious performance improvement for QLED lighting and display application.

The invention relates to the technical field of nano material preparation, in particular to a method for preparing CuInS ternary chalcogenide semiconductor quantum dots, which is characterized by comprising the following steps: (1) precursor configuration, (2) ultraviolet-assisted multi-stage thermal growth, and (3) post-treatment: generating a photo-clipping effect by introducing ultraviolet light irradiation, shortening the chain length of a surface ligand, and obtaining the CuInS ternary chalcogenide semiconductor quantum dots. The CuInS quantum dot with the pure-phase chalcopyrite structure and the preparation method thereof have the advantages that the CuInS quantum dot with the pure-phase chalcopyrite structure and fluorescence QY exceeding 80% is obtained, the quantum yield is high, non-radiative recombination centers are reduced or eliminated, the crystallinity is high, the phase purity is high, components are accurate and the like, and intermediates (such as metal thiolate mesocrystal phases) in the synthesis process are regulated and controlled.

The invention relates to a method for measuring electrical properties of a semiconductor quantum dot material based on free carrier absorption. Comprising the following steps that pumping laser and continuous detection laser are sequentially emitted to the same position of a semiconductor sample to be detected, the power of the pumping laser is changed, the concentration of free carriers is subjected to nonlinear change, the nonlinear characteristic of the free carriers is closely related to the characteristics of excitons and carriers in quantum dots, and the concentration of the free carriers is detected. Transmitting light signal data at different powers are collected through a photoelectric detector, and the obtained data are recorded and processed to obtain electrical characteristic parameters of the detected semiconductor sample. The method is not influenced by the response time or bandwidth limitation of the photoelectric detector, the data processing is simple, and the measurement precision is high; the measuring device is simpler, and the equipment cost is low; the method is wide in application range, can be used for measuring quantum dot materials with deep energy level traps, and is particularly suitable for measuring quantum dot materials with more shallow energy level traps.

A semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal made of a first compound M1C1, a core layer, and a barrier layer grown in such order. The seed crystal has first regions that are inactive with oxygen, and second regions that are easily reactive with oxygen. The core layer is made of the first compound M1C1, and has first and second areas. Each of the first areas is positioned on a corresponding one of the first regions. Each of the second areas is positioned on a corresponding one of the second regions. Each of the first areas has a thickness greater than that of each of the second areas. The barrier layer is made of a second compound selected from M1X1 and X2C1. The shell is grown on the barrier layer, and is made of a third compound M2C2.

This invention discloses a method for preparing semiconductor ionogel microspheres, comprising the following steps: dissolving acrylamide (AM), a crosslinking agent, an ionic liquid, and an aqueous solution of CdS quantum dots by stirring to obtain an aqueous phase; mixing an emulsifier with cyclohexane and stirring to prepare an oil phase; adding the aqueous phase dropwise to the oil phase, sonicating, adding an initiator, heating in an oil bath to fully react, vacuum drying, washing, and then drying again to obtain semiconductor ionogel microspheres. This invention uses acrylamide as a monomer to prepare reverse emulsion microspheres and uses an ionic liquid to enhance the catalytic activity of CdS quantum dot semiconductors. The presence of the ionic liquid significantly improves the ability of semiconductor quantum dots in photocatalytic applications. The preparation method of this invention is simple, has a short preparation cycle, and low equipment cost, making it suitable for large-scale production.

The application discloses a quantum dot enhanced flexible low-power-consumption neural synapse device and a preparation method thereof. The quantum dot enhanced flexible low-power-consumption neural synapse device comprises a flexible substrate, a bottom electrode formed on the flexible substrate, a two-dimensional semiconductor quantum dot layer formed on the bottom electrode, an organic ferroelectric layer formed on the two-dimensional semiconductor quantum dot layer, a two-dimensional semiconductor quantum dot layer formed on the organic ferroelectric layer, and a top electrode formed on the two-dimensional semiconductor quantum dot layer. Excitation is applied to the top electrode by using an electrical pulse as an input signal source, polarization inversion of the organic ferroelectric layer is realized under regulation and control of a local electric field of the quantum dot, and low-power-consumption long-term potentiation and inhibition characteristics are obtained.

The invention provides a surface acoustic wave resonator and semiconductor quantum dot coupling device and a preparation method thereof. The surface acoustic wave resonator and semiconductor quantum dot coupling device specifically comprises a surface acoustic wave resonator on a first surface of a first substrate; the first semiconductor quantum dots and the second semiconductor quantum dots are arranged on the second surface of the second substrate, and the first surface of the first substrate faces the second surface of the second substrate; the first coplanar waveguide transmission line and the second coplanar waveguide transmission line are arranged on the first surface of the first substrate and are electrically connected to the first transducer and the second transducer; the third coplanar waveguide transmission line and the fourth coplanar waveguide transmission line are arranged on the second surface of the second substrate and are electrically connected to quantum dot electrodes of the first semiconductor quantum dots and the second semiconductor quantum dots; the first coplanar waveguide transmission line and the third coplanar waveguide transmission line are coupled with each other, and the second coplanar waveguide transmission line and the fourth coplanar waveguide transmission line are coupled with each other, so that quantum bits of the first semiconductor quantum dots and the second semiconductor quantum dots are coupled through the surface acoustic wave resonators.

A quantum dot (QD)-rhodopsin bioconjugate system uses Förster resonance energy transfer (FRET)-mediated induction of cellular membrane depolarization via optical activation of ion channel proteins channelrhodopsin (ChR).

The invention provides a fluorescent solar light collector based on CuInS2 / ZnS semiconductor quantum dots and a preparation method of the fluorescent solar light collector. The structure is a double-interlayer structure, yellow, orange and red CuInS2 / ZnS quantum dots are used as luminescent materials, and an acrylate polymer is used as a waveguide material. The preparation method comprises the following steps: (1) synthesizing yellow, orange and red CuInS2 / ZnS quantum dots by a one-pot method; (2) mixing a certain amount of yellow, orange and red quantum dots with a polymer monomer, and obtaining a suspension of the quantum dots / polymer monomer after the solvent is evaporated; adding a certain amount of photoinitiator and cross-linking agent into the suspension, and uniformly oscillating; and clamping the suspension containing the orange or red CuInS2 / ZnS quantum dots between optical glass sheets, and carrying out photopolymerization under an ultraviolet lamp to obtain the single-interlayer fluorescent solar light collector with the orange or red CuInS2 / ZnS quantum dots after the polymerization is completed. A certain amount of the yellow or orange CuInS2 / ZnS quantum dot suspension liquid is dropped on the single-interlayer fluorescent solar light collector, another optical glass sheet covers the single-interlayer fluorescent solar light collector, and the single-interlayer fluorescent solar light collector is obtained through polymerization under ultraviolet light. The fluorescent solar light collector prepared by the invention is simple in preparation method, low in toxicity, low in cost, good in stability and high in optical efficiency.

This invention proposes a narrow-emission ultraviolet gallium sulfide quantum dot material and its synthesis method, belonging to the field of semiconductor quantum dot material technology. The method employs a one-pot synthesis strategy and introduces a specific passivating agent into the reaction system. By precisely controlling the reaction conditions and the amount of passivating agent, high-purity ultraviolet-emitting gallium sulfide quantum dots with an emission peak at 392 nm and a half-maximum width at half-maximum (HWHM) of 34 nm were successfully prepared. This synthesis method significantly reduces the HWHM of gallium sulfide quantum dots and improves their spectral purity. This invention provides an effective method for preparing ultraviolet environmentally friendly quantum dots with high color purity, demonstrating great application potential in cutting-edge fields such as lighting and full-color displays.

This invention discloses a semiconductor quantum dot, a method for preparing a single-photon source, and a quantum signal detection system. The method prepares InAs / GaAs quantum dots using molecular beam epitaxy in the Stranski-Krastanow mode, and then combines the prepared semiconductor quantum dots with a microcavity to form a single-photon source. The quantum signal detection system includes a semiconductor quantum dot single-photon source, a laser pump source, a wavelength division multiplexing (WDM) fiber, and an HBT interferometer. The input end of the WDM fiber is connected to the laser pump source, and the output end is connected to the HBT interferometer. Laser light excited by the laser pump source is perpendicularly irradiated onto the surface of the semiconductor quantum dot single-photon source through the WDM fiber, causing electrons to transition to an excited state and radiate recombination to emit photons. After emission, the quantum dot emits light, which is then collected at the end face of the same fiber. The HBT interferometer measures the output signal. This invention allows for the adjustment of the luminescence properties by doping with appropriate metal elements, enabling precise detection of the single-photon signal output from the quantum dot single-photon source.

The invention relates to the technical field of quantum dot light conversion adhesive films, particularly provides a preparation method of a light conversion adhesive film, the light conversion adhesive film and a photovoltaic module, and aims to solve the problems that in the prior art, II-VI group quantum dots cannot be reconciled to be excellent in stability but limited in ultraviolet absorption capacity, and an organic / perovskite light conversion agent is high in ultraviolet absorption capacity but insufficient in stability. In order to achieve the purpose, the preparation method comprises the following steps: preparing a ZnO-ABX3 / EVA (Ethylene Vinyl Acetate) solution; preparing light conversion particles; preparing base material particles; and forming a film. According to the invention, the perovskite quantum dots with high stability and high dispersibility in the adhesive film are synthesized by utilizing the adhesion passivation of nano-zinc oxide on the surfaces of the perovskite quantum dots and the encapsulation of EVA particles; and the perovskite quantum dots with high stability and the II-VI group semiconductor quantum dots are mixed to jointly serve as a light conversion agent, so that strong ultraviolet absorption of the light conversion adhesive film in an ultraviolet region is achieved.

The invention belongs to the technical field of photocatalytic materials, and discloses a method for loading copper oxide quantum dots on the surface of titanium dioxide, which comprises the following steps: coating the surface of TiO2 with carbon quantum dots (CQDs) to form a composite material CQDs / TiO2, and placing the prepared material in a dark environment for more than 24 hours, so that the TiO2 of the CQDs / TiO2 is reversibly converted from hydrophilic to hydrophobic, and the CQDs still maintain the hydrophilic property; in a dark environment, CQDs / TiO2 is immersed in a cupric acetate solution, is rapidly taken out and absorbs a surface solution, so that the solution only exists at a CQDs site; and finally, carrying out air calcination at 400 DEG C through a thermal decomposition method, and cooling to obtain a material structure in which the CuO quantum dots are loaded on the surface of TiO2. The method is suitable for functional modification of materials with fine nanostructures, has significant significance in improvement of photocatalyst performance, and provides a new synthesis thought for design of semiconductor quantum dot heterojunction materials.

The application discloses a controllable single-photon system based on pulsed laser and a preparation method thereof, and the system comprises a pulsed laser part and a single-photon generation part, wherein the pulsed laser part comprises a PC terminal upper computer for issuing a command to control a lower computer FPGA to issue a timing trigger TTL pulse signal, an FPGA circuit board for receiving and executing an upper computer control command, a current driver for driving a laser diode to emit light, and a laser diode for emitting pump light; the single-photon generation part comprises a collimation module for filtering collimated pump laser, a single-photon generation module for generating a single-photon signal, and a filtering and collimation module for filtering noise signals and collimating single photons. The application is based on the fact that the number of single photons generated by semiconductor quantum dots excited by adjustable pulsed laser is controllable, so that the preparation of a single-photon source with a controllable number can be realized, and a reference and technical means for absolute calibration of optical devices are provided.

The application discloses a semiconductor quantum dot measurement method, a measurement and control system and a quantum computer. The method comprises the following steps: applying a working signal to the sensing quantum dot to obtain a target working signal when the sensing quantum dot reads a state; wherein the working signal comprises a first type of synthetic signal composed of a fixed amplitude direct current signal and a variable amplitude direct current signal applied to a gate of the sensing quantum dot; the first type of synthetic signal is applied to the gate of the bit quantum dot, and the target working signal is applied to the gate of the sensing quantum dot to read information of the sensing quantum dot; wherein the first type of synthetic signal is used to form the sensing quantum dot and the bit quantum dot below the gate. The application improves the measurement efficiency of the semiconductor quantum chip.

The invention relates to monodisperse lead sulfide quantum dots with an adjustable size wide range and a preparation method thereof, and belongs to the technical field of semiconductor quantum dots, the preparation method comprises the following steps: mixing a sulfur source, 1-octadecene and a ligand solvent to prepare a sulfur precursor solution; mixing oleic acid, lead oxide and 1-octadecene, and carrying out heating reaction in an inert atmosphere to prepare a lead oleate solution; injecting the sulfur precursor solution into the lead oleate solution, and performing heating reaction to prepare a lead sulfide quantum dot mixed solution; and purifying the lead sulfide quantum dot mixed solution to obtain the lead sulfide quantum dots. The lead sulfide quantum dot provided by the invention has good crystallinity and monodispersity, the size distribution is 4-10nm, and controllable preparation of the lead sulfide quantum dot at an exciton peak position (1,400-2,200 nm) in a short-wave infrared range is realized; the particle size distribution is uniform, and the prepared lead sulfide quantum dot material can be applied to the fields of near-infrared (short-wave infrared) photoelectric detectors, solar cells and the like.