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II-VI long-life quantum dot and preparation method thereof

A quantum dot, long-life technology, applied in chemical instruments and methods, cadmium organic compounds, zinc organic compounds, etc., can solve the problems of short fluorescence lifetime of quantum dots, achieve high quantum yield, long fluorescence lifetime, and excellent stability Effect

Active Publication Date: 2013-02-13
DALIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of short fluorescence lifetime of quantum dots, research and prepare a kind of semiconductor quantum dot material of type II-VI with excellent luminescence performance, water solubility and oil solubility, and long fluorescence lifetime

Method used

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  • II-VI long-life quantum dot and preparation method thereof
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  • II-VI long-life quantum dot and preparation method thereof

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Effect test

Embodiment 1

[0078] First, dissolve 0.0199 g (0.075 mmol) of cadmium acetate dihydrate in deionized water to prepare 50 ml of cadmium acetate solution, add 0.007 g of 4-mercaptobenzoic acid (4-MBA), and then dropwise add 4.5 microliters (0.045 mg mol) thioglycolic acid (TGA), the solution is milky white, the pH of the solution is adjusted to 10 by 1M sodium hydroxide solution, and stirred for 5 minutes to obtain a cadmium source solution; 0.0039 grams (0.015 mmol) of potassium tellurite is dissolved in Prepare 50 ml of potassium tellurite solution in water, add it to the cadmium source solution, and stir for 5 minutes; then, add 0.04 g of sodium borohydride to the above solution, and stir for 15 minutes; finally raise the temperature to 100 degrees Celsius, and reflux for 4 hours. Add an equal volume of acetone to the reaction solution, centrifuge at a speed of 5000 rpm, and wash with acetone for 3 times to obtain pure solid quantum dots 4-MBA-TGA-CdTe. After 2 hours of reaction, the quantu...

Embodiment 2

[0080] First, 0.0199 grams (0.075 mmol) of cadmium acetate was dissolved in deionized water to prepare 50 milliliters of cadmium acetate solution, and 0.005 grams of 2-mercaptobenzothiazole (2-MBTH) was added to adjust the concentration of the solution by 1M sodium hydroxide solution. The pH is 10, stirred for 5 minutes to obtain a cadmium source solution; 0.0039 g (0.015 mmol) of potassium tellurite was dissolved in ionized water to prepare 50 ml of potassium tellurite solution, added to the cadmium source solution, and stirred for 5 minutes ; Then, 0.04 g of sodium borohydride was added to the above solution and stirred for 15 minutes; finally, the temperature was raised to 100 degrees Celsius and refluxed for 2 hours. Add an equal volume of acetone to the reaction solution, centrifuge at a speed of 5000 rpm, and wash with acetone for 3 times to obtain pure solid quantum dots 2-MBTH-TGA-CdTe. The quantum yield of the solution after 2 hours of reaction is 73%. , the fluoresce...

Embodiment 3

[0082] First, 0.0222 g (0.075 mmol) of cadmium nitrate was dissolved in deionized water to prepare 50 ml of cadmium acetate solution, 0.007 g of 4-mercaptobenzoic acid was added, and then 4.5 microliters (0.045 mmol) of thioglycolic acid was added dropwise, and the solution was Milky white, the pH of the solution is adjusted to 12 by 1M sodium hydroxide solution, and the cadmium source solution is obtained by stirring for 5 minutes; 0.0039 g (0.015 mmol) of potassium tellurite is dissolved in ionized water to prepare 50 ml of potassium tellurite The solution was added to the cadmium source solution and stirred for 5 minutes; then, 0.04 g of sodium borohydride was added to the above solution and stirred for 15 minutes; finally, the temperature was raised to 100 degrees Celsius and refluxed for 20 hours. Add an equal volume of acetone to the reaction solution, centrifuge at a speed of 5000 rpm, and wash with acetone for 3 times to obtain pure solid quantum dots 4-MBA-TGA-CdTe. Af...

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Abstract

The invention relates to a II-VI long-life quantum dot and a preparation method thereof, in particular to a II-VI long-life quantum dot material prepared by a conjugated structure ligand and belongs to the field of material preparation. The II-VI long-life quantum dot is formed by combining an organic ligand L and a metal ion of a II-VI l inorganic semiconductor quantum dot through a coordinate chemical bond and has a following structure: MX:L, wherein the M=Cd2+ or Zn2+; and the X=S2+, Te2- or Se2-. The organic ligand L comprises at least one conjugate ligand L1, wherein the conjugate ligand L1 is an organic ligand substituted by at least on sulfydryl or selenyl and containing 1-6 aromatic rings, and the sulfydryl or the selenyl are substituted by the aromatic rings. A luminescent material prepared by the II-VI long-life quantum dot can be widely applied to photoelectric devices and electronic devices including single electron transistors, light emitting diodes, lasers, sensors, infrared detectors and the like.

Description

technical field [0001] The invention relates to a type II-VI long-life quantum dot and a preparation method thereof, in particular to a type II-VI long-life semiconductor quantum dot material prepared by a ligand of a conjugated structure, and belongs to the field of material preparation. Background technique [0002] Due to their size-dependent unique optical properties and potential application value, semiconductor quantum dots have attracted widespread attention and extensive research by researchers in various fields. Compared with traditional organic dye molecules, semiconductor quantum dots show a series of characteristics such as wide and continuous absorption spectrum, narrow and symmetrical emission spectrum shape, adjustable emission wavelength with the size of quantum dots, and high photochemical stability. The synthesis methods of quantum dots mainly include two methods: synthesis in organic solvent and synthesis in water phase. The preparation conditions of semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06C07F3/08C07F3/06
Inventor 武素丽常杰张洁张淑芬
Owner DALIAN UNIV OF TECH
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