Method for preparing graphene/semiconductor quantum dot composite material

A composite material and quantum dot technology, which is applied in the field of preparing graphene/semiconductor quantum dot composite materials, can solve the problems of poor repeatability of the synthesis process, complicated preparation process, and high cost, and achieve low toxicity, simple preparation process, and low cost. Effect

Inactive Publication Date: 2010-12-15
SHANGHAI JIAO TONG UNIV
View PDF3 Cites 42 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Further search found that Chinese patent application No. 200910035780.2 discloses a graphene-semiconductor nanoparticle composite system and its synthesis method, but this technology uses poor reproducibility of the synthesis pro...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing graphene/semiconductor quantum dot composite material
  • Method for preparing graphene/semiconductor quantum dot composite material
  • Method for preparing graphene/semiconductor quantum dot composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Prepare graphene / CdTe quantum dot composite material, comprising the following steps:

[0033] 1) Put 2g of natural graphite powder with a particle size of 500 mesh and 1g of sodium nitrate in a 250ml three-necked bottle, and cool it to 0°C in an ice bath; slowly add 50mL of concentrated sulfuric acid into the three-necked bottle, and fully stir for 30 minutes to ensure the stability of the reaction system. The temperature is not higher than 5°C; add 0.3g of potassium permanganate into the there-necked flask, and fully stir for 30 minutes, while ensuring that the temperature of the reaction system is not higher than 10°C; within 1 hour, divide 7g of potassium permanganate into 3 Add batches into the three-necked flask to ensure that the temperature of the reaction system is not higher than 20°C; remove the ice bath and replace it with a water bath to heat the temperature of the reaction system to 35±3°C, stir and react for 2 hours to obtain a brown graphite suspension; r...

Embodiment 2

[0038] Prepare graphene / CdTe quantum dot composite material, comprising the following steps:

[0039] Steps 1) and 2) in this embodiment are exactly the same as those in the above embodiment. The difference is that in step 3), the bright yellow CdTe quantum dot precursor solution obtained in 2) is mixed with the graphene solution in 1), and then transferred to an autoclave for heat treatment at 160°C for 30 minutes. bit to generate CdTe quantum dots.

Embodiment 3

[0041] Prepare graphene / HgSe quantum dot composite material, comprising the following steps:

[0042] 1) is exactly the same as 1) in the above-mentioned embodiment 1.

[0043] 2) Take 0.94g (2.35mmol) Hg (ClO 4 ) 2 , 250mL of water, and 502μL (5.77mmol) of mercaptopropionic acid were placed in a three-necked flask. The solution appeared turbid. The pH value of the system was adjusted to 11.2 with 1M NaOH solution, and the solution became clear. The solution was continuously passed through nitrogen for 30 minutes to remove the air, and keep the system in a nitrogen atmosphere for use; take 0.186g Se powder and place it in a nitrogen-filled reagent bottle, and quickly inject 0.178g NaBH into it 4 and 10mL water until the black Se powder disappears to obtain a transparent NaHSe aqueous solution; the NaHSe aqueous solution is magnetically stirred and passed through N 2 Under the condition of fast injection in the three-necked bottle filled with Hg salt solution, the molar rati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing a graphene/semiconductor quantum dot composite material, which belongs to the technical field of inorganic nano materials and prepares the graphene/semiconductor quantum dot composite material by preparing solution of single-layer graphene and solution of quantum dots and uniformly mixing the solution of graphene and the solution of quantum dots. The surfaces of the quantum dots synthesized by using mercaptan acid as a stabilizer of the invention have carboxyls, while the surfaces of graphene slices prepared by a chemical oxidation reduction process have hydroxys; therefore, the carboxyls can be bonded with the hydroxys by covalent bonds to form the graphene/quantum dot composite material. As the graphene and the quantum dots mutual soluble in water, ligand disreplacement or modification is avoided. Thus, the preparation process is simplified greatly and the cost is lowered.

Description

technical field [0001] The invention relates to a method in the technical field of inorganic nanomaterials, in particular to a method for preparing graphene / semiconductor quantum dot composite materials. Background technique [0002] Graphene is an ideal two-dimensional crystal formed by covalent bonding of carbon atoms. It not only has a large specific surface area (2630m 2 / g), and has excellent mechanical properties (Young's modulus up to 1100GPa, fracture strength up to 125GPa), thermal properties (thermal conductivity of 5000W / m.K) and electrical properties (charge mobility up to 2×10 5 cm 2 / V.s), is expected to be applied in energy storage materials, polymer composite materials, liquid crystal display devices and biochemical sensors. [0003] The size of semiconductor quantum dots is several nanometers to tens of nanometers. Due to the quantum size effect, it has discrete electronic energy levels and size-dependent energy level spacing and band gaps, so it has good ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B31/04C01B19/04
Inventor 程萍蓝天余家龙王俊飞陈瑞昊郭守武
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap