6 results about "Quantum size" patented technology

This invention discloses a photoelectrocatalyst and its preparation method, wherein the photoelectrocatalyst comprises Zn 2+ Ce 4+ Au; Zn 2+ Including ammonium acetate, zinc nitrate, and hexamethylenetetramine; Ce 4+ Including cerium nitrate, ammonium chloride, and potassium chloride; Au includes PVP, sodium citrate, potassium bromide, and chloroauric acid; Zn 2+ Ce 4+ The molar ratio of Au to Zn is... 2+ Ce 4+ Au = 1:0.5 ~ 1:2.5 * 10 ‑7 ~7.5*10 ‑7 This method uses electrodeposition to prepare ZnO as a substrate. Its vertically aligned one-dimensional (1D) nanostructures exhibit quantum size-dependent effects, effectively shortening the carrier diffusion distance. CeO2 coats the ZnO, forming a stable, acid- and alkali-resistant substrate material. CeO2 traps electrons from Ce... 4+ Restored to Ce 3+ This forms oxygen voids and Ce 3+ / Ce 4+ Electron pairs produce high catalytic activity.

This invention discloses an AlQDs@Ga2O3 solar-blind photodetector based on quantum size effects, its fabrication method, and its applications, belonging to the field of photoelectric detection technology. The solar-blind photodetector of this invention includes a substrate, a Ga2O3 layer, a quantum dot material layer, and electrodes. The Ga2O3 layer is disposed on the surface of the substrate, and the quantum dot material layer is disposed on the surface of the Ga2O3 layer, but does not completely cover the Ga2O3 layer. The electrodes include electrode I and electrode II; electrode I and electrode II are disposed on either the Ga2O3 layer or the quantum dot material layer; and electrode I and electrode II are not simultaneously located on the same material layer; the quantum dot material layer includes aluminum quantum dots (AlQDs). This invention combines AlQDs with continuously tunable optical bandgap in the solar-blind band with Ga2O3 with a compatible bandgap value in the solar-blind band to fabricate a solar-blind detector. This detector exhibits excellent wavelength selectivity, providing new ideas for high-resolution single-pixel imaging, ultra-low-power remote sensing, and ultraviolet multispectral photoelectric detection applications, and can also be used for deep ultraviolet anti-interference imaging.

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a growth substrate, an n-type nitride layer, a nitride diffusion layer, a composite light-emitting layer, a nitride barrier layer, and a p-type nitride layer, stacked sequentially. The composite light-emitting layer comprises spaced nanopillar spacers and light-emitting units disposed between adjacent nanopillar spacers. The nanopillar spacers separate the light-emitting units, making the light-emitting units nanostructured. This not only reduces the stress in the light-emitting layer within the light-emitting units and improves the composition incorporation and uniformity of the epitaxial layer, but also utilizes the quantum size confinement effect to reduce QCSE, improve the radiative recombination efficiency of electrons and holes, and reduce the carrier trapping effect caused by sidewall damage. This improves the luminous efficiency and brightness of the nitride semiconductor epitaxial wafer, reduces the full width at half maximum (FWHM) of the emission wavelength, and enhances the color purity for display applications.

This invention discloses a rare-earth-doped perovskite quantum dot / fluoride core-shell heterostructure nanomaterial and its preparation method, relating to the field of nanomaterial preparation technology. This invention uses Yb 3+ Cesium lead halide perovskite serves as the quantum dot core, with a rare-earth-doped active fluoride shell epitaxially grown on its surface, forming a core-shell heterostructure. Furthermore, an undoped inert fluoride shell is epitaxially grown on the surface of the active fluoride shell, constructing a core-shell-shell multilayer heterogeneous nanomaterial. This invention achieves complementary performance advantages between perovskite and fluorides, broadens the material's spectral response range, improves chemical stability and luminescence efficiency, and combines upconversion luminescence and quantum sizing characteristics. It can be widely applied in near-infrared photodetectors, biofluorescent probes, optical anti-counterfeiting, and spectral conversion thin films.

The invention discloses a preparation method of a NiCoMn microsphere energy storage material containing an amorphous-nanocrystalline double-phase structure. The NiCoMn microspheres are grown on the foamed nickel by adopting a solvothermal method. Through Mn doping modulation, a mixed crystal NiCoMn structure containing amorphous and quantum size nanocrystals is prepared. The preparation method comprises the following specific preparation processes: mixing Ni (NO3) 2.6 H2O, Co (NO3) 2.6 H2O, MnCl2. 4H2O, isopropanol, glycerol and foamed nickel, stirring for 1 hour, adding into a polytetrafluoroethylene lining, and carrying out hydrothermal reaction; and taking out the foamed nickel sheet, cleaning the foamed nickel sheet with water and ethanol, and drying the foamed nickel sheet at 60 DEG C for 12 hours to obtain the NiCoMn anode material. The maximum specific capacity of the NiCoMn anode material is as high as 5750 F g < 1 > at 1 A g < 1 > and is still as high as 5300 F g < 1 > at 10 A g < 1 >, which is far higher than 1367 F g < 1 > (1 A g < 1 >) and 1133 F g < 1 > (10 A g < 1 >) of NiCo, and both the 1367 F g < 1 > (1 A g < 1 >) and the 1133 F g < 1 > (10 A g < 1 >) exceed four times. And after 5000 cycles under a large charging current of 10A g < 1 >, a retention rate of 83.5% can be obtained, and excellent sustainability is shown. The device can be applied to power supply charging occasions requiring high stability, high magnification and high energy density.

The present invention relates to the technical field of nano-synthetic materials, discloses a method for synthesizing matrix-free blue-green dual-color solid fluorescent carbon dots and their applications in LED and fingerprint detection, synthesizes blue light seed carbon dots (S-CDs) by 1,2,4-benzenetricarboxylic acid and urea, and successfully prepares green light (G-CDs) and strong blue light carbon dots (B-CDs) with quantum yields increased by 35 times and 75 times, respectively, by H2O2 oxidation and NaOH treatment. The study reveals the regulatory effects of quantum size effect and surface state change on fluorescence color and quantum yield, wherein hydrogen peroxide and sodium hydroxide treatment improve the photoluminescence performance of CDs by changing surface groups and destroying hydrogen bonds. The synthesized G-CDs and B-CDs have the advantages of strong fluorescence, photobleaching resistance, good photostability, low cost and simple synthesis, and are combined with commercial red phosphors to prepare white light LEDs with high color rendering index and suitable color temperature, which are suitable for indoor lighting. In addition, B-CDs and G-CDs, as fluorescent markers, can effectively improve the accuracy and reliability of latent fingerprint detection.