4 results about "Quantum size" patented technology

This invention discloses a photoelectrocatalyst and its preparation method, wherein the photoelectrocatalyst comprises Zn 2+ Ce 4+ Au; Zn 2+ Including ammonium acetate, zinc nitrate, and hexamethylenetetramine; Ce 4+ Including cerium nitrate, ammonium chloride, and potassium chloride; Au includes PVP, sodium citrate, potassium bromide, and chloroauric acid; Zn 2+ Ce 4+ The molar ratio of Au to Zn is... 2+ Ce 4+ Au = 1:0.5 ~ 1:2.5 * 10 ‑7 ~7.5*10 ‑7 This method uses electrodeposition to prepare ZnO as a substrate. Its vertically aligned one-dimensional (1D) nanostructures exhibit quantum size-dependent effects, effectively shortening the carrier diffusion distance. CeO2 coats the ZnO, forming a stable, acid- and alkali-resistant substrate material. CeO2 traps electrons from Ce... 4+ Restored to Ce 3+ This forms oxygen voids and Ce 3+ / Ce 4+ Electron pairs produce high catalytic activity.

This invention discloses an AlQDs@Ga2O3 solar-blind photodetector based on quantum size effects, its fabrication method, and its applications, belonging to the field of photoelectric detection technology. The solar-blind photodetector of this invention includes a substrate, a Ga2O3 layer, a quantum dot material layer, and electrodes. The Ga2O3 layer is disposed on the surface of the substrate, and the quantum dot material layer is disposed on the surface of the Ga2O3 layer, but does not completely cover the Ga2O3 layer. The electrodes include electrode I and electrode II; electrode I and electrode II are disposed on either the Ga2O3 layer or the quantum dot material layer; and electrode I and electrode II are not simultaneously located on the same material layer; the quantum dot material layer includes aluminum quantum dots (AlQDs). This invention combines AlQDs with continuously tunable optical bandgap in the solar-blind band with Ga2O3 with a compatible bandgap value in the solar-blind band to fabricate a solar-blind detector. This detector exhibits excellent wavelength selectivity, providing new ideas for high-resolution single-pixel imaging, ultra-low-power remote sensing, and ultraviolet multispectral photoelectric detection applications, and can also be used for deep ultraviolet anti-interference imaging.

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a growth substrate, an n-type nitride layer, a nitride diffusion layer, a composite light-emitting layer, a nitride barrier layer, and a p-type nitride layer, stacked sequentially. The composite light-emitting layer comprises spaced nanopillar spacers and light-emitting units disposed between adjacent nanopillar spacers. The nanopillar spacers separate the light-emitting units, making the light-emitting units nanostructured. This not only reduces the stress in the light-emitting layer within the light-emitting units and improves the composition incorporation and uniformity of the epitaxial layer, but also utilizes the quantum size confinement effect to reduce QCSE, improve the radiative recombination efficiency of electrons and holes, and reduce the carrier trapping effect caused by sidewall damage. This improves the luminous efficiency and brightness of the nitride semiconductor epitaxial wafer, reduces the full width at half maximum (FWHM) of the emission wavelength, and enhances the color purity for display applications.

This invention discloses a rare-earth-doped perovskite quantum dot / fluoride core-shell heterostructure nanomaterial and its preparation method, relating to the field of nanomaterial preparation technology. This invention uses Yb 3+ Cesium lead halide perovskite serves as the quantum dot core, with a rare-earth-doped active fluoride shell epitaxially grown on its surface, forming a core-shell heterostructure. Furthermore, an undoped inert fluoride shell is epitaxially grown on the surface of the active fluoride shell, constructing a core-shell-shell multilayer heterogeneous nanomaterial. This invention achieves complementary performance advantages between perovskite and fluorides, broadens the material's spectral response range, improves chemical stability and luminescence efficiency, and combines upconversion luminescence and quantum sizing characteristics. It can be widely applied in near-infrared photodetectors, biofluorescent probes, optical anti-counterfeiting, and spectral conversion thin films.