Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for semiconductor nanowire orderly distributed in array mode

A technology of nanowire arrays and ordered arrays, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, nanotechnology, etc., can solve the problems of difficult preparation of nanowires and high cost, and achieve the effect of reducing power generation costs and improving photoelectric conversion efficiency

Inactive Publication Date: 2014-09-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although nano-radial p-n junction solar cells have good development prospects, it is still difficult to prepare ordered arrays of nanowires. The size of lithography, nanoimprinting, electron beam exposure and other technologies will make the cost extremely high. We can Using simple template method and growth method to prepare nanowire structure, so as to facilitate the wide application of nanowire in silicon thin film batteries

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for semiconductor nanowire orderly distributed in array mode
  • Preparation method for semiconductor nanowire orderly distributed in array mode
  • Preparation method for semiconductor nanowire orderly distributed in array mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] see Figure 1-Figure 7 As shown, the present invention provides a method for preparing a semiconductor nanowire ordered array distribution, comprising the following steps:

[0021] Step 1: Clean a substrate 1 to obtain a polished substrate from which organic substances, heavy metals, and oxide layers have been removed. The material of the substrate 1 is silicon. Clean the silicon wafer of the substrate 1 in strict accordance with the degreasing and cleaning of the silicon wafer of the substrate 1. The steps of removing heavy metals and oxide layers are cleaned, and then the silicon wafer of the substrate 1 is blown dry with a nitrogen gun, and put into the sample box;

[0022] Step 2: An aluminum layer 2 with an adjustable thickness is vapor-deposited on the substrate 1, and the aluminum layer 2 is grown by thermal evaporation and magnetron sputtering. Choose the thickness according to your own needs, and vapor-deposit a layer of aluminum layer 2 with an adjustable thi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A preparation method for semiconductor nanowires orderly distributed in an array mode includes the first step of washing a substrate to obtain a polished substrate without organisms or heavy metal or oxidation layers, the second step of arranging a thickness-adjustable aluminum layer on the substrate through evaporation, the third step of oxidizing the aluminum layer to obtain a porous anode alumina template according to an anode oxidation method, the fourth step of pouring precursor liquid in holes of the porous anode alumina template according to an electroplating method and achieving metal lattice array sedimentation in the holes of the porous anode alumina template by controlling the electroplating time, the fifth step of etching the porous anode alumina template in a wet mode through a solution to obtain a metal lattice array which is highly orderly distributed on the surface of the substrate and is uniform in quantum size, the sixth step of growing a required semiconductor nanowire array according to a gas-liquid-solid method with the metal lattice array as a catalyst, and the seventh step of removing the metal lattice array at the top end of the semiconductor nanowire array to complete preparation.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic new energy, and relates to a method for preparing a thin film battery, in particular to a method for preparing an ordered array of semiconductor nanowires, which applies a radial p-n junction structure of silicon nanowires to solar cells. Background technique [0002] As an important driving force for the sustainable development of the country, energy has always played the most important role. The current storage of fossil fuels (including non-renewable resources such as coal, oil, and natural gas) is decreasing year by year, and the energy crisis is becoming more and more serious. On the other hand, the consumption of fossil fuels The discharge of the products has seriously polluted the environment and seriously affected the living conditions of human beings. Solar photovoltaic power generation, as one of the clean and renewable new energy sources, has been widely recognized in the past half...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18B82Y40/00
CPCB82Y40/00H01L21/02532H01L21/02535H01L21/02603H01L31/1804Y02P70/50
Inventor 邱凯周天微左玉华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products