160results about "Lead compounds" patented technology

The invention relates to a black-phase all-inorganic perovskite flexible thick film stable at room temperature and a preparation method and application thereof, and the preparation method comprises the following steps: uniformly mixing PbI2, CsI and an organic ammonium salt in an organic solvent to obtain a perovskite precursor solution; filling a polymer filter membrane with the perovskite precursor solution through a vacuum filtration method to obtain a wet flexible thick membrane; the polymer filter membrane is cleaned, and the thickness is 50 microns or above; and carrying out gradient annealing on the wet flexible thick film to obtain the black-phase all-inorganic perovskite flexible thick film which is stable at room temperature. According to the invention, low-dimensional perovskite induced lattice distortion is formed by adding A-site cations, and the flexible thick film which is thermodynamically stable and uniform at room temperature is obtained based on a solvent suction filtration method by regulating and controlling the addition amount of organic ammonium salt and gradient annealing and regulating and controlling the proportion of residual organic ammonium salt of lattices, and is applied to an X-ray detector. High [mu] [tau] product and high sensitivity are realized, and good flexible detection performance is shown.

The invention is suitable for the technical field of luminescent materials, and provides a multi-structure coordinated regulation efficient stable CsPbI3 nanorod and a preparation method and application thereof.The preparation method comprises the following steps that octadecene, oleic acid and cesium carbonate are heated in the inert gas atmosphere and stirred till a solution is dissolved, and a precursor solution is obtained; the preparation method comprises the following steps: adding lead iodide, nitrate, oleic acid and oleylamine into a container filled with octadecene, exhausting gas, introducing inert gas, heating, and stirring to obtain a clear and transparent solution; heating, and injecting the precursor solution in the step 1 into the clear and transparent solution in the step 2; and carrying out heat preservation at first, then rapidly cooling to room temperature, and then centrifugally dispersing into a non-polar solvent to obtain the CsPbI3 nanorod. The method is simple to operate and low in energy consumption, and the red light CsPbI3 perovskite nanocrystal is stable in sample phase, narrow in half-peak width, high in luminous color purity, few in surface defect, high in quantum efficiency and high in carrier transport capacity, and can be applied to the fields of LEDs, solar cells, photoelectric detectors and the like.

The present invention relates to: a method for forming a large-area perovskite thin film, enabling the manufacture of a high-quality large-area perovskite thin film; a coating agent used therefor; and a perovskite solar cell comprising same as a light-absorbing layer.

The invention provides a cesium lead halide perovskite target material and a preparation method and application thereof, and relates to the technical field of magnetron sputtering. The preparation method of the cesium-lead halide perovskite target material comprises the following steps: mixing cesium halide and lead halide, and carrying out ball milling to obtain precursor powder; pressing the precursor powder to obtain a cesium lead halide perovskite target material precursor; and carrying out annealing treatment on the caesium lead halide perovskite target material precursor to obtain the caesium lead halide perovskite target material. The preparation method is simple, no waste is generated in the preparation process, the surface of the target material is smooth, internal components are uniform, and a film prepared from the target material is uniformly distributed on a substrate and can be used for preparing an optical film; and the target material can be recycled after being used, and can be continuously used as a raw material for preparing the cesium lead halide perovskite target material.

The invention discloses a method for improving the stability of metal halide perovskite, a material and application, belongs to the technical field of semiconductor photoelectric devices, and mainly relates to a method for improving the stability of the metal halide perovskite by doping methylene diamine cations (CH2 (NH3) 22 + and MDA < 2 + >) at a site A of a halide perovskite lattice and application of the method. The methylenediamine cation realizes substitution doping of halide perovskite by substituting part of monovalent A-site host cations in a perovskite crystal growth process, and becomes a divalent organic cation which has a proper ion size and can be doped into a lattice A site; the high charge number of the material can form stronger electrostatic interaction with halogen anions which are easy to move in perovskite, so that the migration difficulty of the halogen anions is increased. By doping multivalent cations at the position A of a perovskite lattice, perovskite ion migration is inhibited, phase separation is inhibited, and an important thought and method are provided for preparing efficient and stable perovskite photovoltaic devices and laminated solar cells.

The invention discloses a perovskite nanocrystal preparation method and device based on a second-order microfluidic system, and the method comprises the steps: injecting a cation precursor solution and a lead halide precursor solution into the microfluidic system through an injection pump, and respectively preheating the precursor solutions; and mixing the preheated precursor solution in a microfluidic system, and carrying out primary heating and secondary heating. And finally, cooling to obtain the nanocrystal at the outlet of the microfluidic system. The invention also provides a microfluidic device for realizing the preparation method, and the microfluidic device comprises an injection pump, a precursor preheating module, a multi-interface communicator, and a heating module I, a refrigeration module, a heating module II and a quenching module which are cascaded in sequence. The temperature of different reaction stages is independently adjusted through the precursor preheating module, the heating module I and the heating module II, the crystallization and growth process is optimized, the problem of micro-pipeline blockage caused by precursor precipitation at high temperature is avoided, the system stability is improved, and batch preparation of high-performance perovskite photoelectric materials is supported.

The application provides a method for regulating halogen perovskite microstructure at a frozen temperature by using a laser and an electric field, and relates to a device, which is a customized TEM in-situ sample rod equipped with a laser optical fiber and a liquid nitrogen Dewar bottle, and a Nd:YAG pulse laser system with a wavelength of 532 nm, adjustable pulse frequency and a pulse duration of 7 ns coupled into a transmission electron microscope through the optical fiber; first, at a frozen temperature, perovskite nanocrystals are etched by controlling the energy, frequency and action time of the pulse laser, then at the frozen temperature, the small crystal nucleus rotation of the perovskite nanocrystals is controlled by using a low-energy pulse laser and applying an electric field, and the perovskite nanocrystals are recrystallized along specific crystal faces, so that perovskite nanocrystals with specific exposed surfaces, reduced microstructure defects and increased radiation resistance are obtained, and the method has great value for large-scale industrial production.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

Disclosed is a self-powered perovskite X-ray detector. The self-powered perovskite X-ray detector according to an embodiment of the present invention has a shape wherein a scintillator converting incident X-rays into visible light is combined with a perovskite photodetector, wherein the scintillator and the perovskite light absorption layer include a perovskite compound represented by Formula 1 below:         [Formula 1]     AaMbXc where A is a monovalent cation, M is a divalent metal cation or a trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3b=4c when M is a trivalent metal cation, and a, b, and c are natural numbers.

The invention belongs to the technical field of perovskite nanocrystals, and particularly relates to a composite material and a preparation method thereof, a photoelectric device and a display device, and the composite material comprises perovskite nanocrystals and acid radical anions of VIB group elements modified on the surfaces of the perovskite nanocrystals. The invention further relates to a preparation method of the composite material, a photoelectric device and a display device. According to the technical scheme provided by the invention, the stability of the perovskite nanocrystal in different environments can be improved.

The application provides a perovskite superlattice, a preparation method and application in a nanoscale light emitting diode, and the preparation method comprises the following steps: S1, adding B raw materials, an organic ligand, a cosolvent and an organic polymer C into a solvent, and then heating in a vacuum environment to obtain a precursor 1; S2, adding A raw materials and a cosolvent into a solvent, and then heating in a vacuum to obtain a precursor 2; S3, heating the precursor 1 to a specified temperature in an inert gas atmosphere, mixing the precursor 2 with the precursor 1, and then reducing to room temperature at a set cooling rate, and then standing, centrifuging and cleaning to obtain a nanoscale perovskite superlattice; the organic polymer C is at least one of polymethyl methacrylate, low-density polyethylene, polyethylene, linear low-density polyethylene, polyvinylidene fluoride or isotactic polypropylene. The nanoscale light emitting diode has small size and high light emitting efficiency.

The invention discloses a preparation method of all-inorganic perovskite nanocrystals based on liquid phase pulse laser induction, belonging to the technical field of perovskite luminescent materials. The preparation method is: using Cs2CO3 and PbBr2 as reaction precursors, adding n-hexane, oleic acid and oleylamine, and performing irradiation reaction under a 1064nm pulse laser beam; the product after the irradiation reaction is centrifuged once to obtain a supernatant, and the supernatant is centrifuged twice to obtain a solid product perovskite nanocrystal. The invention successfully prepares all-inorganic perovskite nanocrystals with high fluorescence quantum yield under the condition of no inert gas protection by using liquid phase pulse laser radiation technology.

The invention discloses a preparation method for synthesizing perovskite quantum dots CsPbX3 in alkali metal halide, which specifically comprises the following steps: dissolving halide in deionized water, and stirring in a water bath kettle to form a precursor solution rich in halogen; adding PbX2, stirring, adding CsX into the halogenated alkali metal solution, and stirring to obtain a mixed solution of perovskite quantum dots and alkali metal halide; and spraying the perovskite quantum dot solution on a glass plate, drying, and crystallizing the alkali metal halide and the perovskite quantum dot at the same time to obtain the perovskite quantum dot CsPbX3 in the alkali metal halide. According to the method, only deionized water is adopted as a solvent, high solubility of an organic reagent to PbX2 is abandoned, a full-inorganic-phase perovskite quantum dot solution is formed, and then the full-inorganic-phase perovskite quantum dot solution is dried to obtain the full-inorganic perovskite quantum dot CsPbX3. In addition, the method is simple to operate, does not adopt an organic reagent, is low in cost and can be popularized on a large scale.

The invention provides an application of a perovskite nanocrystalline probe in preparation of a cancer detection reagent. The perovskite nanocrystalline probe is formed by a biological material targeting a Survivin gene and a water-soluble perovskite nanocrystalline through electrostatic interaction or covalent coupling. The water-soluble perovskite nanocrystal is formed by in-situ coating and packaging of perovskite quantum dots and a polymer packaging material. The high-molecular packaging material comprises a lipidosome for modifying a functional group; the liposome is selected from one or more than two of dipalmitoyl phosphatidylcholine, dipalmitoyl phosphatidylethanolamine, distearoyl phosphatidylcholine and distearoyl phosphatidylethanolamine; the functional group is selected from carboxyl, amino and sulfydryl; and the perovskite quantum dots are selected from CsPbBr3. The universal perovskite nanocrystalline probe provided by the invention can be used for high-sensitivity rapid detection of various cancer tissues or cells.

To provide luminescent crystals (LCs).SOLUTION: The present invention relates to the field of luminescent crystals (LCs), and more specifically to Quantum Dots (QDs) of the formula M1aM2bXc, wherein the substrates are as defined in the specification. The invention provides methods of manufacturing such luminescent crystals, particularly by dispersing suitable starting materials in the presence of a liquid and by the aid of milling balls; to compositions comprising luminescent crystals and to electronic devices, decorative coatings; and to intermediates comprising luminescent crystals.SELECTED DRAWING: Figure 2

Systems and methods for generating radionuclides, such as radium-224. Systems herein may include a first cartridge having a first opening, a second opening, and a chamber therebetween having a first resin having affinity for thorium-228 and bismuth-212; a second cartridge having a first opening, a second opening, and a chamber therebetween having a second resin having affinity for thorium-228 and bismuth-212, a third cartridge having a first opening, a second opening, and a chamber therebetween comprising a third resin having affinity for thorium-228 and bismuth-212, a fourth cartridge having a first opening, a second opening, and a chamber therebetween having a third resin having affinity for lead-212; wherein a continuous flow path is formed from a top of the first cartridge though the second cartridge, through the third cartridge, and to a bottom of the fourth cartridge during system use.

The present invention discloses a method for preparing blue-light CsPbBr3 nanowires by cooling and recombination. A crude solution of CsPbBr3 green-light quantum dots is pre-synthesized by a hot injection method. At room temperature and in an air environment, the crude solution of CsPbBr3 quantum dots is continuously stirred at a temperature of 0 °C to 20 °C to complete the structural recombination from quantum dots to nanowires, and blue-light emission is achieved through dimensional confinement. It is centrifugally purified to obtain a perovskite nanowire solution with bright blue-light emission. The preparation method of the present invention is simple and the conditions are not harsh. CsPbBr3 solutions with different fluorescence spectra can be prepared under different stirring times, realizing a continuous transition from green light to blue light. The CsPbBr3 blue-light nanowires have uniform size, good dispersibility and good crystallinity. Their emission wavelength is 453 nm, the full width at half maximum is 20 nm, the fluorescence quantum yield reaches 81%, and they have excellent stability. When stored in an air environment for one month, their fluorescence intensity basically does not decay.

This application relates to a method for preparing Mn-doped CsPbBr3 nanowires. The method comprises: 1) injecting a cesium oleate precursor solution into a mixed solution A, dispersing the resulting precipitate by centrifugation in an oil-phase solvent, and obtaining a CsPbBr3 nanowire seed solution; 2) injecting the CsPbBr3 nanowire seed solution into a mixed solution B to form Mn-doped CsPbBr3 nanowires, cooling the solution, and centrifuging the resulting precipitate. Mixed solution A is prepared by mixing octadecene, oleic acid, oleylamine, and lead bromide, heating the mixture until the lead bromide is fully dissolved, and then cooling the mixture; mixed solution B is prepared by mixing octadecene and manganese bromide and heating the mixture under an inert gas atmosphere. This method provides sufficient thermal energy for the dopant while minimizing Ostwald maturity, allowing the dopant to diffuse into the crystal without the use of highly corrosive acids. While maintaining the nanowire's shape anisotropy and overall dimensional uniformity, it can produce nanowires with ultra-small diameters, making it an effective method for synthesizing Mn-doped CsPbBr3 nanowires.

The invention provides a composite membrane for separating 226Ra and 210Pb as well as a preparation method and application thereof, and relates to the technical field of radioactive ion extraction and separation, and the preparation method comprises the following steps: mixing polyacrylonitrile, crown ether and ionic liquid to obtain a spinning solution, and spinning the spinning solution into a membrane to obtain the composite membrane. Effective extraction and separation of 226Ra and 210Pb in the uranium ore digestion solution can be realized, so that radioactive pollution in the environment is reduced, environmental resources can be recycled, meanwhile, the preparation method is simple and low in cost, and the prepared composite membrane is non-toxic and harmless and is beneficial to industrial application.

A method of preparing a light-emitting material, the method including mixing a first precursor solution including a first precursor and a first solvent with a second precursor solution including a second precursor and a second solvent to form a precipitate, and separating the precipitate to obtain a light-emitting material, wherein a solubility of the first precursor in the first solvent may be greater than a solubility of the first precursor in the second solvent, and a solubility of the second precursor in the second solvent may be greater than a solubility of the second precursor in the first solvent. A light-emitting material prepared by the method, and a light-emitting device including the light-emitting material is also described.

The application provides a CsPbBr3 / graphene composite material and a preparation method thereof.The composite material is prepared by using a precursor CsBr, a precursor PbBr2, oleic acid, oleylamine and graphene nanosheets as raw materials through an improved anti-solvent method to realize in-situ growth preparation.The all-inorganic perovskite nanocrystal / graphene structure obtained by the application combines the all-inorganic perovskite layer with high photon absorption and the graphene carrier transport layer, so that the all-inorganic perovskite nanocrystal / graphene structure has high light absorption, high conductivity and strong carrier separation capacity, and provides a reference and reference value for future new high-performance optoelectronic devices.

The invention provides a compound monoboric acid monohydrate dihydroxy lead decaborate nonlinear optical crystal as well as a preparation method and application thereof, and belongs to the technical field of inorganic chemistry. The chemical formula of the crystal is Pb2B10O16 (OH) 2. B (OH) 3. H2O, the molecular weight is 892.35, the crystal belongs to a monoclinic system and P21, the crystal is obtained by growing in a closed system by adopting a hydrothermal method or growing in an open system by adopting a room temperature solution method, the crystal is easy to grow up, transparent and unwrapped in the preparation process, and the crystal has the advantages that the growth speed is high, the cost is low, a large-size crystal is easy to obtain and the like. The obtained crystal has the advantages that the light transmission wave band reaches a deep ultraviolet region, physical and chemical properties are stable, deliquescence is not easy, processing and storage are easy, and the like, and can be further used for preparing a frequency doubling generator, an upper or lower frequency converter and an optical parametric oscillator.

The invention discloses a mixed ligand modified cesium lead halide perovskite nanocrystal and a preparation method thereof, and the preparation method comprises the following steps: (1) adding CsBr and PbBr2 in an equal molar ratio into a P-AMDL polymer solution to obtain a CsPbBr3 precursor solution; (2) injecting the precursor solution into a toluene solvent, and then settling and purifying by using an n-hexane solvent to obtain a P-AMDL modified CsPbBr3 solution; (3) introducing an oleic acid oleylamine ligand to obtain CsPbBr3 modified by a mixed ligand; and (4) optimizing an ion exchange method by combining a mixed ligand strategy to obtain the mixed ligand modified CsPbBrxI3-x. According to the invention, the problem of wide particle size distribution of nanocrystals synthesized by an LARP method at room temperature is solved, and the all-inorganic cesium-lead halide perovskite nanocrystals with fewer defects, more regular morphology and better ultraviolet stability are successfully prepared. The'micromolecule + polymer 'mixed ligand strategy gives consideration to the regulation and control precision of the micromolecule ligand and the stability of the polymer ligand, and is an effective means for optimizing the morphology and performance of the perovskite nanocrystal.

The invention belongs to the technical field of heterostructure construction, and particularly relates to a SnS2 / CsPbBr3 heterojunction as well as a preparation method and application thereof. The preparation method of the SnS2 / CsPbBr3 heterojunction comprises the following steps: taking a hexagonal 2D SnS2 nanosheet synthesized by a hydrothermal method as a growth template, combining with a 3D CsPbBr3 nanocube synthesized by a solution method, and successfully constructing the 2D / 3D SnS2 / CsPbBr3 heterojunction through an electrostatic self-assembly technology. The invention innovatively provides a heterojunction preparation strategy aiming at the problems of serious interface charge recombination, low photoresponse efficiency and the like of a metal halide perovskite material. Through an electrostatic self-assembly technology, a 2D / 3D SnS2 / CsPbBr3 heterojunction system is successfully constructed, and the problems of serious interface recombination, low light response rate and the like of metal halide perovskite in photoelectric application are successfully broken through.

A composite including a matrix of metal halide perovskite single crystal and a scaffold having a plurality of wire-like elements with a diameter in the range from 6 to 5000 μm.

The present invention is directed to an antimicrobial substrate having a layer of PbTe quantum dots (QD) attached to an outer surface of the material. Further provided is a method of fabrication the substrate / modification of a material for obtaining an antimicrobial surface.

The present application relates to the field of microcrystalline materials, and in particular to a perovskite-based microcrystalline material, its preparation process and application. The preparation process of the perovskite-based microcrystalline material specifically includes the following steps: S1: preparation of site material solution; S2: addition of framework particle raw materials; S3: preliminary synthesis of microcrystalline material; S4: preparation of composite microcrystalline material. The perovskite-based microcrystalline material prepared in the present application can effectively overcome the internal defects in the material, thereby avoiding the loss of photoelectric performance, and can ensure that the perovskite material has excellent stability under long-term illumination, high temperature and humidity environment, and still maintains good self-properties in high humidity environment, avoiding decomposition, and thus has very excellent application value.

The capacitor includes a first electrode, a second electrode, and a dielectric, the dielectric being disposed between the first electrode and the second electrode, the dielectric including a crystal having a composition of APb2X5, where A is a cation that is a molecular ion including a nitrogen atom, and X is a halogen element.

The present invention pertains to: a method for forming a large-area perovskite thin film, whereby a uniform, large-area perovskite thin film can be manufactured without using an anti-solvent; a coating agent used in said method; and a perovskite solar cell including said perovskite thin film as a light absorption layer.

The pure alpha-CsPbI2Br thin film has excellent photothermal stability, but has poor humidity stability, and will be converted from alpha phase to delta phase and lose optical activity in a low humidity environment. In view of the problem, the application designs a method for preparing alpha-Cs 1‑x FA x PbI2Br(0<x<0.5) perovskite thin film. The application takes PbI2·DMSO and PbBr2·DMSO adduct as raw materials, and overcomes the problem that the obtained perovskite thin film is phase-separated when the content of FA is less than 50% in the preparation process of a traditional perovskite thin film. The synthesis process of the application is simple, and does not need complex anti-solvent treatment or heating process. Finally, the alpha-Cs 1‑x FA x The PbI2Br(0<x<0.5) thin film has large grain size, good crystallinity and high density, and the doping of a small amount of FA ions greatly increases the tolerance factor of the perovskite, and the humidity stability is obviously increased compared with CsPbI2Br; meanwhile, the alpha-Cs 1‑x FA x PbI2Br(0