Doped lead tellurides for thermoelectric applications

A thermoelectric and compound technology, applied in selenium/tellurium compounds, metal selenide/telluride, thermoelectric device junction lead wire materials, etc., can solve problems such as reducing specific thermal conductivity

Inactive Publication Date: 2009-04-29
BASF AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, electrical conductivity is reduced t...

Method used

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  • Doped lead tellurides for thermoelectric applications
  • Doped lead tellurides for thermoelectric applications
  • Doped lead tellurides for thermoelectric applications

Examples

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example 1

[0108] Element powder in quantity according to composition Pb 0.992 Ge 0.005 Ti 0.003 Te 1.003 (Purity: Pb≥99.999%, Te≥99.999%, Ge≥99.999%, Ti≥99.99%) were weighed into a quartz ampoule with an inner diameter of 1 cm. The amount of the sample is 20 g. Evacuate and seal the ampoule. Subsequently, the ampoule is 500Kh in the furnace -1 It was heated to 980° C. and kept at this temperature for 6 h. The contents of the ampoules were continuously mixed by tilting the furnace. After the reaction time, the shaft furnace is at 100Kh -1 was cooled to 600 °C and the material was heat-treated at this temperature for 24 h. Subsequently, the furnace is at 60Kh -1 was cooled to room temperature.

[0109] A compact, silvery slag was obtained, which could be removed from the ampoule without any problems. A diamond wire saw was used to cut approximately 2 μm thick slices from metal slag, on which first the electrical conductivity and then the Seebeck coefficient were measured at roo...

example 2

[0112] Element powder in quantity according to composition Pb 0.992 Ge 0.005 Ti 0.003 Te 1.003 (Purity: Pb≥99.999%, Te≥99.999%, Ge≥99.999%, Zr≥99.95%) were weighed into a quartz ampoule with an inner diameter of 1 cm. The amount of the sample is 20 g. Evacuate and seal the ampoule. Subsequently, the ampoule is 500Kh in the furnace -1 It was heated to 980° C. and kept at this temperature for 6 h. The contents of the ampoules were continuously mixed by tilting the furnace. After the reaction time, the shaft furnace is at 100Kh -1 was cooled to 600 °C and the material was heat-treated at this temperature for 24 h. Subsequently, the furnace is at 60Kh -1 was cooled to room temperature.

[0113] A compact, silvery slag was obtained, which could be removed from the ampoule without any problems. A diamond wire saw was used to cut approximately 2 mm thick slices from metal slag, on which first the electrical conductivity and then the Seebeck coefficient were measured at roo...

example 3

[0116] Element powder in quantity according to composition Pb 0.99 Bi 0.005 al 0.005 Te 1.001 (Purity: Pb≥99.999%, Te≥99.999%, Al≥99.999%, Bi≥99.998%) were weighed into a quartz ampoule with an inner diameter of 1 cm. The amount of the sample is 20 g. Evacuate and seal the ampoule. Subsequently, the ampoule is 100Kh in the furnace -1 It was heated to 1000° C. and kept at this temperature for 15 h. The contents of the ampoules were continuously mixed by tilting the furnace. After the reaction time, the shaft furnace was switched off and allowed to cool to room temperature.

[0117] A compact, matt silver-shiny slag was obtained which could be removed from the ampoule without any problems. A diamond wire saw was used to cut approximately 2 mm thick slices from metal slag, on which first the electrical conductivity and then the Seebeck coefficient were measured at room temperature.

[0118] Corresponds to S 2 σ=23.7μWK -2 cm - 1 power factor, conductivity is σ=992.0S ...

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Abstract

A p- or n-conductive semiconductor material comprises a compound of the general formula Pb1-(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z (I) where: in each case independently n is the number of chemical elements different from Pb and Te, 1 ppm<=x1 . . . xn<=0.05, -0.05<=z<=0.05 and n>=2, A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1, and A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.

Description

technical field [0001] The present invention relates to semiconductor materials comprising lead and tellurium and at least one or two further dopants, and to thermoelectric generators and Peltier devices comprising thermoelectric generators. Background technique [0002] Thermoelectric generators and Peltier devices have been known for some time. The p-doped and n-doped semiconductors, heated on one side and cooled on the other, carry charges through an external circuit, and electrical work can be performed by loads in this circuit. The efficiency of heat to electricity conversion achieved in this process is thermodynamically limited by the Carnot efficiency. Thus, at a temperature of 1000K on the hot side and 400K on the "cold" side, an efficiency of (1000-400):1000=60% would be possible. However, only efficiencies up to 10% have been achieved so far. [0003] On the other hand, when direct current is applied to such a device, heat is transferred from one side to the oth...

Claims

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Application Information

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IPC IPC(8): C01B19/00H01L35/16H01L35/22C04B35/515
CPCC04B2235/6562C04B2235/6565C04B2235/407C01P2006/32C01B19/007C04B2235/408C04B2235/6567C04B2235/40C04B35/653C04B2235/402C01P2006/40C04B2235/404C04B35/547C01B19/002H01L35/16Y02P20/129H10N10/852C01G21/00H10N10/855
Inventor F·哈斯
Owner BASF AG
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