19 results about "Seebeck coefficient" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

This invention discloses a thermoelectric module with intrinsic open-circuit protection and its protection method. The thermoelectric module includes multiple thermoelectric units connected in series and at least one bidirectional protection device. The bidirectional protection device is connected in parallel with at least one of the thermoelectric units and is a semiconductor device with bidirectional avalanche breakdown characteristics. Its breakdown voltage satisfies: where is the normal operating terminal voltage of the thermoelectric unit, α is the absolute value of the Seebeck coefficient, is the maximum design temperature difference, and is the voltage across the faulty unit during an open-circuit fault. During normal operation, the protection device is high-resistance cutoff; during a fault, it avalanche conduction forms a bypass. This invention also provides an open-circuit protection method for the thermoelectric module, including a threshold determination step and a voltage triggering step. This invention achieves hardware-level passive fault tolerance, with fast response speed and high reliability.

This invention discloses a method for optimizing the geometric parameters of a thermoelectric arm in a thermoelectric power generation system, relating to the field of thermoelectric power generation. The method includes: constructing a three-dimensional steady-state multiphysics coupled model of the thermoelectric power generation system; incorporating the height and cross-sectional area of ​​the thermoelectric arm as core geometric parameters to be optimized; and configuring the Seebeck coefficient, electrical conductivity, and thermal conductivity parameters corresponding to the thermoelectric material; setting boundary conditions for the model, including the target temperature at the hot end of the thermoelectric arm, the fluid velocity boundary corresponding to the cold end heat dissipation, and the system load resistance boundary, to ensure the model remains consistent with the actual working scenario. This invention improves model adaptation accuracy by constructing a multiphysics coupled model that fits the actual working conditions and dynamically adjusting material-related parameters. Combined with a parameterized scanning strategy with dynamic step sizes, it improves scanning efficiency while ensuring optimization effectiveness. The dual-objective optimization based on dynamic weights can flexibly adapt to different power supply requirements.

The application discloses a Td-WTe2 / 1T'-MoTe2 heterojunction device for room-temperature photoelectric detection and a preparation method and application thereof. The heterojunction device is composed of Td-WTe2 and 1T'-MoTe2, and the two are connected through interlayer van der Waals force in an overlapping area. When light irradiates the overlapping area or a neighboring area thereof, a photo-thermal-electric response can be generated due to the difference in Seebeck coefficients of the two. The application provides a device scheme for realizing room-temperature photoelectric detection by utilizing the difference in thermoelectric properties of two specific materials without relying on a traditional semiconductor depletion region or an asymmetric light irradiation condition, and has the advantages of room-temperature operation, self-power supply, near-infrared response and fast response, and has important value in the field of photoelectric detection.

To provide a liquid thermoelectric conversion element in which a small heat flow causes a large temperature difference between a positive electrode and a negative electrode to obtain high electromotive force, and a method for controlling the electrochemical Seebeck coefficient of the liquid thermoelectric conversion element.SOLUTION: A liquid thermoelectric conversion element 10 includes a first electrode 21, a second electrode 22, and an electrolytic solution 30 interposed between the first electrode 21 and the second electrode 22, and the electrolytic solution 30 contains an organic solvent, and oxide ions, and reduction ions.SELECTED DRAWING: Figure 1

The application relates to the technical field of a thermoelectric material performance detection system based on a thermoelectric textile, and particularly discloses a thermoelectric material performance detection system based on a thermoelectric textile. The system comprises a temperature control loading platform, an electric heating signal acquisition unit, a computer vision strain sensing unit, an adaptive deformation compensation module and a central processing unit; the temperature control loading platform applies a controllable temperature gradient and contact pressure, the electric heating signal acquisition unit synchronously acquires voltage and current signals, the computer vision unit analyzes full-field strain through image sequences, the adaptive deformation compensation module dynamically corrects the electric heating signal in combination with a physical information neural network, and accurate Seebeck coefficients and electric conductivities are output. Through multi-modal sensing and physical constraint model fusion, the application realizes high-fidelity characterization of the performance of the easily-deformable thermoelectric textile under dynamic load, and improves test accuracy and repeatability.

The application discloses a van der Waals asymmetric thermal resistance structure infrared thermoelectric detector and a preparation method thereof. The detector adopts a sandwich stacking structure and sequentially comprises, from bottom to top, a silicon nitride film, a middle electrode layer, a first electrode and a second electrode arranged on the silicon nitride film, and a thermoelectric conversion material layer, two ends of the thermoelectric conversion material layer being respectively in ohmic contact with the first electrode and the second electrode to form a suspended thermal bridge structure with the silicon nitride film as a support. The thermoelectric conversion material layer is selected from a low-thermal-conductivity high-Seebeck-coefficient van der Waals material, the contact area of the thermoelectric conversion material layer with the first electrode is greater than the contact area of the thermoelectric conversion material layer with the second electrode, and an asymmetric thermal resistance interface is formed between the first electrode and the second electrode, so that infrared thermoelectric detection is realized without an external bias. The application provides a novel infrared thermoelectric detector with high performance, self-power supply and compact structure.

The utility model discloses a sample stage structure for variable temperature thermoelectric parameter test system, including sample fixed frame, the bottom of sample fixed frame is equipped with variable temperature platform subassembly, the top of variable temperature platform subassembly is equipped with insulating plate, the top of insulating plate is equipped with seebeck coefficient probe subassembly, the top of seebeck coefficient probe subassembly is equipped with sample, the top of sample is equipped with sample clamp, the utility model discloses through the cooperation of silver table, liquid nitrogen pipeline and heating rod, place sample on silver table, can conveniently realize variable temperature measurement, and gold washer installs independently, is convenient to replace, and through the cooperation of sample fixed frame, sample clamp, seebeck coefficient probe subassembly, insulating plate, variable temperature platform subassembly, insulating washer, resistivity probe subassembly and mounting screw, sample sample is pressed on seebeck coefficient probe subassembly and resistivity probe subassembly, ensures good thermal contact, and keeps the temperature consistency of sample.

The present application relates to the field of data measurement, and discloses a kind of thermoelectric, rectification and Hall effect in-situ integrated measurement method of micro-nano material, the method is applied to thermoelectric, rectification and Hall effect in-situ integrated measurement device, the method comprises: the sample to be measured made of micro-nano material is suspended and placed on the first surface of substrate, the sample to be measured and part of microelectrode contact, the serpentine microelectrode is powered on heating, the thermal performance parameter of the sample to be measured is measured;Constant current source and microelectrode are connected, and the electrical performance parameter of the sample to be measured is measured;Magnetic field is applied, and the Hall thermal effect parameter of the sample to be measured and the Hall effect parameter of the sample to be measured are measured and calculated.The present application directly measures the thermal conductivity, electrical conductivity, Seebeck coefficient, thermoelectric merit value, thermal / electric rectification coefficient, Hall thermal conductivity, carrier concentration and mobility and other parameters of the sample to be measured on one micro-nano material sample, improves the accuracy of measurement result, and lays a foundation for thermoelectric magnetic coupling transport mechanism research.

Thermoelectric generator for converting a temperature gradient into electrical energy, comprising a plurality of thermoelectric elements arranged between a hot-side interface and a cold-side interface, characterized in that the thermoelectric elements are manufactured by additive manufacturing through three-dimensional printing and consist of functionally graded materials, wherein the material composition varies continuously or stepwise along a heat flow direction, such that a gradient of electrical conductivity, thermal conductivity and Seebeck coefficient is generated within the thermoelectric elements.

This invention discloses a thermoelectric chemical battery device and control method integrating thermal energy storage, belonging to the field of thermal energy storage and thermoelectric power generation technology. The thermoelectric chemical battery of this invention includes a heat-absorbing material, a phase change thermal energy storage device, a battery anode, a battery cavity, and a battery cathode; the battery anode acts as the hot electrode to drive the thermoelectric chemical reaction, and the battery cathode acts as the cold electrode of the thermoelectric chemical battery. This device combines the advantages of phase change thermal energy storage and, through a designed strategy, achieves a thermoelectric chemical battery device capable of efficiently recovering and utilizing various types of fluctuating waste heat. The battery's Seebeck coefficient can reach more than 10 times that of semiconductor thermoelectric materials. The thermoelectric chemical battery can generate high voltage under small temperature differences and has the advantage of a flexible structure. Through flexible design of the encapsulation structure and electrodes, it can adapt to waste heat sources with different surface shapes, and can utilize small temperature differences to extract heat from the environment, thus having a wide range of applications.

The application belongs to the technical field of thermoelectric materials, and particularly relates to a cubic phase AgBiTe2 thermoelectric material and a preparation method and application thereof. AgBiTe2 is a promising I-V-VI2 thermoelectric candidate material with intrinsic low lattice thermal conductivity, and its practical application is seriously hindered by the instability of the cubic phase thermodynamics. In this work, we propose an entropy engineering strategy by PbTe alloying to stabilize the cubic phase in the whole working temperature range. Based on this robust matrix, Cd doping is used to decouple electron-phonon transport, which proves that Cd doping can effectively optimize the n-type carrier concentration, and at the same time induce the change of energy band structure, thereby significantly improving the Seebeck coefficient. Microstructurally, Cd supersaturation induces a layered defect architecture composed of Cd-rich inclusions and dense dislocations. These multi-scale features and intrinsic cationic disorder cooperatively scatter phonons, further improving the transport properties of carriers and practical application scenarios.

This invention relates to the field of screening technology for welding materials, specifically disclosing a method for screening indium-containing alloy welding materials. Based on first-principles calculations using density functional theory, high-precision structural relaxation yields the basic phase information of each crystal structure in the TM1-In-TM2 system. The thermal properties of the binary crystal structure in the TM1-In-TM2 system are calculated. Furthermore, combined with the CALPHAD model, a thermodynamic model of the ternary alloy system is established. The stability and eutectic point of the TM1-In-TM2 system are analyzed, and five low-melting-point eutectic indium-containing alloy welding materials are screened out. Differential scanning calorimetry (DSC) is used to experimentally verify the calculated five ternary alloy systems. The hardness and conductivity of some samples are tested using an HV-1000A microhardness tester and a high-precision Seebeck coefficient and resistivity tester. The results show that the calculated values ​​are in excellent agreement with the experimental values. The proportions of the components of each low-melting-point eutectic indium-containing alloy welding material are discovered for the first time, exhibiting advantages such as low melting point, high powder quality, and no adhesion.

This invention relates to the field of thermoelectric materials technology, and more particularly to a non-stoichiometric Hessler alloy thermoelectric material based on band modulation, its preparation method, and its applications. The chemical formula of the non-stoichiometric Hessler alloy thermoelectric material is TiCo. 0.9‑n M n Cu 0.6 Sn; where 0 ≤ n ≤ 0.9; M is a platinum group metal. By doping Co sites with platinum group metals, the band gap of the thermoelectric material is increased and the carrier concentration is reduced due to the change in the d-orbital energy level, which further significantly improves the Seebeck coefficient and reduces the thermal conductivity, thereby improving the thermoelectric performance. Furthermore, a preparation method adapted to non-stoichiometric Hessler alloys was developed. Through an integrated preparation process of raw material compensation ratio + specific arc melting + ball milling + stepped heating discharge plasma sintering, the deviation between the actual composition and the target composition of the non-stoichiometric alloy is ensured to be within 5%, achieving a high degree of matching between material design and preparation process.

This invention discloses a high-power-factor p-type Mg-based Zintl phase thermoelectric material and its preparation method, belonging to the field of thermoelectric technology. Specifically, this invention relates to a thermoelectric material using a novel Mg-based semiconductor material YbMg2Sb2 as a substrate. By doping Mg or Yb atomic sites with heterovalent Li atoms, the carrier concentration of the material is increased, significantly optimizing the material's conductivity while maintaining a high Seebeck coefficient, thus achieving a high-power-factor p-type Mg-based material. Furthermore, this material has many advantages, such as inexpensive and readily available raw materials and a mature and simple process, giving it stronger commercial competitiveness.

The application discloses a nickel-chromium alloy material with a negative Seebeck coefficient and a preparation method and application thereof. The chemical formula of the nickel-chromium alloy material with the negative Seebeck coefficient is Ni-xCr (x=10-20 wt.%). The material is prepared by precisely controlling discharge plasma sintering process parameters, i.e. coupling of rapid heating, short-time holding and external pressure, and removing the pressure applied on the powder immediately after the sintering reaction, so as to realize densification at a lower temperature and inhibit complete equilibrium solid solution, realize controllable adjustment of the alloy solid solution behavior under non-equilibrium conditions, and construct a composite phase structure composed of coexisting solid solution phase and incomplete solid solution phase. The material can be used in combination with a traditional nickel-chromium alloy with a positive Seebeck coefficient, and is used for constructing a self-compensating or differential thermocouple system, and has important application value in the fields of thermoelectric temperature measurement, thermoelectric conversion and precise temperature control.

This invention discloses a nickel-chromium alloy material with a negative Seebeck coefficient, its preparation method, and its applications. The chemical formula of the nickel-chromium alloy material with a negative Seebeck coefficient is Ni-xCr (x = 10~20 wt.%). By precisely controlling the discharge plasma sintering process parameters, namely through the coupling effect of rapid heating, short-term holding, and external pressure, combined with the immediate removal of the pressure applied to the powder after the sintering reaction, densification is achieved at a lower temperature while suppressing complete equilibrium solid solution. Under non-equilibrium conditions, the solid solution behavior of the alloy can be controllably adjusted, constructing a composite phase microstructure composed of a solid solution phase and an incompletely solidified phase. This material can be paired with traditional nickel-chromium alloys with positive Seebeck coefficients to construct self-compensating or differential thermocouple systems, which has significant application value in the fields of thermoelectric temperature measurement, thermoelectric conversion, and precision temperature control.