85 results about "Seebeck coefficient" patented technology

The invention discloses a high-temperature surface contact thermal resistance elimination method based on double thermocouple compensation, and belongs to the technical field of material thermal property characterization and testing. The method comprises the following steps: synchronously acquiring double-thermocouple temperature, and obtaining a temperature difference signal through filtering calibration and environment correction; calculating the real-time heat flux density according to the corrected temperature difference, the Seebeck coefficient and the dynamic correction factor; establishing a nonlinear dynamic coupling model containing contact thermal resistance parameters, and performing temperature interval division; identifying a contact thermal resistance parameter on line by adopting a self-adaptive recursive least square algorithm, and generating a dynamic thermal resistance compensation value; and applying the compensation value to a double-thermocouple signal according to the weight, and outputting accurate high-temperature surface temperature. According to the method, data acquisition and preprocessing, dynamic heat flow correction, nonlinear segmented modeling, self-adaptive online identification and refined compensation output strategies are adopted, the influence of high-temperature surface contact thermal resistance can be effectively eliminated, and the accuracy and reliability of temperature measurement in the high-temperature environment are remarkably improved.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention relates to an ionic redox couple thermoelectric cement-based composite material, the composite material comprises a cement matrix and redox couples, and the redox couples exist in pores of the cement matrix; wherein the redox pairs are K4 [Fe (CN) 6] and K3 [Fe (CN) 6], and the porosity of the cement matrix is 25%-50%. According to the invention, the migration of ions in a cement matrix is regulated and controlled by introducing the redox couple, so that a relatively high Seebeck coefficient, conductivity and power factor are achieved while good mechanical properties are maintained, and the thermoelectric conversion efficiency is remarkably improved. Besides, the composite material can drive electrode reaction through temperature difference to generate a closed current loop, stable current output is achieved, and the problem of current output of a traditional ionic thermoelectric material is solved.

The invention discloses an N-type gel ionic thermal battery, a quasi-solid gel electrolyte and a preparation method of the quasi-solid gel electrolyte, and belongs to the technical field of thermal regeneration batteries. The preparation method comprises the following steps: fully soaking polyacrylamide hydrogel in an electrolyte containing [Cu (NH3) 2] < + > / [Cu (NH3) 4] < 2 + > redox couple to obtain the quasi-solid gel electrolyte. And preparing the N-type gel ionic thermal battery by using the quasi-solid gel electrolyte. According to the prepared N-type gel ion thermal battery, the thermoelectric conversion performance such as thermoelectric potential and output power is remarkably improved through the synergistic effect of solvated structure entropy change generated by the oxidation-reduction reaction of the copper ammonia complex reaction couple and the quasi-solid gel electrolyte. The problems that research and development of an existing N-type gel ion thermal battery focuses on physical performance regulation and control of a gel matrix, thermoelectric contribution of an oxidation-reduction reaction cannot be effectively enhanced, and improvement of the Seebeck coefficient and the power density is limited can be effectively solved.

The invention belongs to the technical field of thermoelectricity, and relates to a preparation method and application of a quasi-solid thermoelectric material capable of realizing humidity stability by means of phase separation regulation, the preparation method comprises the following steps: dissolving a negatively charged hydrophilic monomer, an electrically neutral monomer, a cross-linking agent and a photoinitiator in a solvent to obtain a precursor solution, and carrying out an ultraviolet polymerization reaction to form polyelectrolyte gel; mixing the eutectic solvent with an electrolyte aqueous solution containing redox ion pairs and lithium chloride to obtain a quaternary electrolyte system; and immersing the gel into a quaternary electrolyte system, and fully replacing the internal solution through a diffusion effect to obtain the quasi-solid thermoelectric material with stable humidity. The thermoelectric material has the advantages of excellent Seebeck coefficient, good stability, high mechanical strength, large power density and the like, can supply power to wearable electronic products in an actual humidity fluctuation environment, breaks through the main bottleneck of actual application of quasi-solid ionic thermoelectric materials based on ionized water gel, and is wide in application prospect.

The present invention discloses a VN 0.52 O 0.26 The method of combining nanoparticles with PEDOT:PSS thermoelectric nanocomposite film is used to prepare VN by pyrolysis of urea to generate ammonia and react with NaVO3 at high temperature. 0.52 O 0.26 Nanoparticles, constructing P-type PEDOT:PSS and N-type VN 0.52 O 0.26 The pn junction barrier of the nanoparticle organic-inorganic composite and the energy filtering effect between the nanoparticles and the organic PEDOT interface are used to improve the conductivity, Seebeck coefficient and power factor of the thermoelectric composite film. The organic-inorganic thermoelectric nanocomposite film prepared has a Seebeck coefficient of 62.75μV / K and a power factor of 474.424μWm at 90°C. ‑1 K ‑2 .

The invention discloses a semiconductor cooler refrigeration performance evaluation method and system, and relates to the semiconductor refrigeration technology, and the method comprises the steps: building a TEC refrigeration model considering the Peltier effect, Joule heat, heat conduction and Thomson effect; solving the established TEC refrigeration model to obtain Seebeck coefficients, TEC average resistance and TEC average thermal conductivity under different hot surfaces; establishing a function mapping relation based on the Seebeck coefficients, the TEC average resistance and the TEC average thermal conductivity under different heat surfaces obtained by solving; and constructing a refrigerating capacity and refrigerating temperature equation according to the established function mapping relation to evaluate the TEC refrigerating effect. The TEC characteristic function relation changing along with the temperature can be established on the basis of a small amount of TEC measured data, and therefore the TEC refrigeration temperature, the refrigeration capacity, the control voltage, the control current and other performance data can be rapidly and accurately calculated.

The invention belongs to the technical field of flexible sensors, and particularly relates to a metal organic framework composite film based on a thermoelectric effect, a flexible temperature sensor and a preparation method of the flexible temperature sensor. According to the method, Ni3 (HITP) 2 nanoparticles are grown in situ on a single-walled carbon nanotube, and the MOFs-based thermoelectric composite film is obtained. According to the invention, Ni3 (HITP) 2 and SWCNT are adopted as raw materials, Ni3 (HITP) 2 grows on SWCNT in situ, so that the preparation of a flexible metal organic framework composite film with high Seebeck coefficient and high conductivity is realized, the flexible metal organic framework composite film is used for temperature sensing, the preparation of a metal organic framework material-based temperature sensor with high mechanical flexibility, high Seebeck coefficient and high conductivity is realized, and the preparation of the flexible metal organic framework material-based temperature sensor with high mechanical flexibility, high Seebeck coefficient and high conductivity is realized. For example, the sensitivity can reach 44.7 [mu] V / K.

This invention discloses a thermoelectric module with intrinsic open-circuit protection and its protection method. The thermoelectric module includes multiple thermoelectric units connected in series and at least one bidirectional protection device. The bidirectional protection device is connected in parallel with at least one of the thermoelectric units and is a semiconductor device with bidirectional avalanche breakdown characteristics. Its breakdown voltage satisfies: where is the normal operating terminal voltage of the thermoelectric unit, α is the absolute value of the Seebeck coefficient, is the maximum design temperature difference, and is the voltage across the faulty unit during an open-circuit fault. During normal operation, the protection device is high-resistance cutoff; during a fault, it avalanche conduction forms a bypass. This invention also provides an open-circuit protection method for the thermoelectric module, including a threshold determination step and a voltage triggering step. This invention achieves hardware-level passive fault tolerance, with fast response speed and high reliability.

This invention discloses a method for optimizing the geometric parameters of a thermoelectric arm in a thermoelectric power generation system, relating to the field of thermoelectric power generation. The method includes: constructing a three-dimensional steady-state multiphysics coupled model of the thermoelectric power generation system; incorporating the height and cross-sectional area of ​​the thermoelectric arm as core geometric parameters to be optimized; and configuring the Seebeck coefficient, electrical conductivity, and thermal conductivity parameters corresponding to the thermoelectric material; setting boundary conditions for the model, including the target temperature at the hot end of the thermoelectric arm, the fluid velocity boundary corresponding to the cold end heat dissipation, and the system load resistance boundary, to ensure the model remains consistent with the actual working scenario. This invention improves model adaptation accuracy by constructing a multiphysics coupled model that fits the actual working conditions and dynamically adjusting material-related parameters. Combined with a parameterized scanning strategy with dynamic step sizes, it improves scanning efficiency while ensuring optimization effectiveness. The dual-objective optimization based on dynamic weights can flexibly adapt to different power supply requirements.

Provided is a thermoelectric element which has high thermoelectric conversion efficiency, can obtain a high ZT value, and can be surface-mounted and reduced in size. A thermoelectric element according to the present invention is provided with: a first thermoelectric material part (1) having one end part (1a) and the other end part (1b); a second thermoelectric material part (2) that is directly bonded to the first thermoelectric material part or is bonded to the first thermoelectric material part via a conductor (2a); and a pair of electrodes (3) connected to the first thermoelectric material part, the first thermoelectric material part having an absolute value of a Seebeck coefficient higher than that of the second thermoelectric material part and a resistivity higher than that of the second thermoelectric material part, and an assembly (4) of the first thermoelectric material part and the second thermoelectric material part having end surfaces on one end side and the other end side. The pair of electrodes is in contact with the first thermoelectric material portion without being in contact with the second thermoelectric material portion, and is formed on an end surface on the one end portion side and an end surface on the other end portion side of the joined body.

Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and / or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. The various embodiments may maintain (or increase) the Seeback coefficient and electrical conductivity of thermoelectric materials and simultaneously decrease the thermal conductivity of the thermoelectric materials.

The invention relates to the technical field of thermoelectric material testing, and discloses a thermoelectric material testing method and system suitable for a high-intensity magnetic field. The method comprises the following steps: filling a thermoelectric material on a sample table in a sample rod, and vacuumizing the interior of the sample rod; heating the two sides of the sample table at different degrees, measuring the temperature of the two sides of the sample table, establishing a temperature difference, and measuring the voltage value of the thermoelectric material under the temperature difference to obtain a potential difference; performing linear fitting on the temperature difference and the potential difference to obtain a Seebeck coefficient; heating the two sides of the sample table to the same degree to enable the temperatures of the two sides of the sample table to be the same, measuring the resistance value of the thermoelectric material, and calculating the conductivity of the thermoelectric material. According to the invention, the Seebeck coefficient and the conductivity of the sample can be measured in a strong magnetic field.

The present invention relates to a silver selenide / single-walled carbon nanotube flexible composite film, its preparation method, and application, belonging to the technical field of flexible thermoelectric material preparation. The preparation method comprises preparing a dispersion of single-walled carbon nanotubes, adding a selenium source, a surface morphogen, and a reducing agent to the dispersion, and uniformly mixing to synthesize a selenium nanowire / single-walled carbon nanotube composite. Using the selenium nanowires in the composite as a template, silver nitrate is added to an ethylene glycol solution to react and obtain a silver selenide / single-walled carbon nanotube composite. The resulting product is dispersed in anhydrous ethanol, filtered using a porous filter membrane as a substrate, and vacuum dried. Finally, the composite film is cold-pressed and heat-treated to obtain the composite film. This maximizes the power factor of the silver selenide / single-walled carbon nanotube flexible composite film, compensates for the loss in Seebeck coefficient after direct composite of p-type single-walled carbon nanotubes and n-type silver selenide, and simultaneously improves the thermoelectric performance and bending resistance of the silver selenide / single-walled carbon nanotube composite film.

The application discloses a ferroelectric local field enhanced polarized photoelectric detector and a preparation method thereof, and relates to the technical field of polarized photoelectric detection. The polarized photoelectric detector is observed from bottom to top and sequentially comprises a substrate, a two-dimensional semiconductor layer, a metal electrode pair and a ferroelectric film layer. The material of the two-dimensional semiconductor layer is black phosphorus. The material of the ferroelectric film layer is polyvinyl fluoride-based ferroelectric polymer. The metal electrode pair comprises a first metal electrode and a second metal electrode. A channel structure formed between the first metal electrode and the second metal electrode exposes part of the two-dimensional semiconductor layer. An in-plane PN junction is formed by part of the two-dimensional semiconductor layer exposed after the ferroelectric film layer is electrode polarized. The strong local field of the ferroelectric film changes the Seebeck coefficient and the conductivity of the black phosphorus in the armchair direction and the zigzag direction, enhances the photocurrent in the armchair direction, and greatly improves the polarization detection ratio of the polarized photoelectric detector.

The application discloses a Td-WTe2 / 1T'-MoTe2 heterojunction device for room-temperature photoelectric detection and a preparation method and application thereof. The heterojunction device is composed of Td-WTe2 and 1T'-MoTe2, and the two are connected through interlayer van der Waals force in an overlapping area. When light irradiates the overlapping area or a neighboring area thereof, a photo-thermal-electric response can be generated due to the difference in Seebeck coefficients of the two. The application provides a device scheme for realizing room-temperature photoelectric detection by utilizing the difference in thermoelectric properties of two specific materials without relying on a traditional semiconductor depletion region or an asymmetric light irradiation condition, and has the advantages of room-temperature operation, self-power supply, near-infrared response and fast response, and has important value in the field of photoelectric detection.

The invention discloses a thermoelectric material and a preparation method thereof, the chemical formula of the thermoelectric material is K2Bi8 + xS13, the thermoelectric material is n-type, and x is more than 0 and less than or equal to 0.004. The preparation method of the thermoelectric material comprises the following steps: (1) a high-temperature smelting step: in a vacuum environment, performing high-temperature smelting treatment on raw materials weighed according to a stoichiometric ratio to obtain a K2Bi8 + xS13 cast ingot; and (2) a densification step: grinding the K2Bi8 + xS13 cast ingot into powder, and performing spark plasma sintering treatment on the powder under a vacuum condition to obtain a K2Bi8 + xS13 thermoelectric material block, wherein the spark plasma sintering treatment is carried out under the pressure of 40 to 50 MPa. The K2Bi8 + xS13 thermoelectric material disclosed by the invention has good conductivity and Seebeck coefficient and relatively low lattice thermal conductivity, and has a good application prospect.

The invention discloses a method for improving Seebeck coefficient of PEDOT (poly (3, 4-ethylenedioxythiophene)), which is characterized by comprising the following specific steps: step 1, synthesizing EDOT and a derivative monomer thereof by utilizing an esterification reaction method; step 2, preparing an oxidation solution required by in-situ oxidative polymerization; 3, adding a monomer and an oxidizing solution system, spin-coating on a glass substrate, and performing in-situ oxidative polymerization to obtain a conductive polymer; and step 4, fully cleaning an in-situ polymerization product with absolute ethyl alcohol, and then drying to obtain the final PEDOT conductive film with the high Seebeck coefficient. The method for improving the Seebeck coefficient of the PEDOT by introducing the side group on the surface of the PEDOT provides a new thought for research and application of the PEDOT in the thermoelectric field, especially in the flexible wearable field.

The invention relates to the technical field of nano composite materials, and discloses a flexible polymer composite thermoelectric material with a multilevel structure and a preparation method thereof, the material is a flexible self-supporting film, and comprises an MOF matrix, a single-walled carbon nanotube and a conductive polymer coating layer; the material has a hierarchical pore structure of micropores, mesopores and macropores. A mesoporous / macroporous structure is regulated and controlled through a PS microsphere template, a micropore-mesoporous-macroporous hierarchical pore structure is constructed in combination with Cu3 (BTC) 2 intrinsic micropores, the pore size, the pore size distribution and the porosity are systematically regulated, the scattering effect on phonons with different wavelengths is enhanced, and accurate regulation and control of the thermal conductivity of the material are realized. According to the design, the limitation that the thermal conductivity of an existing MOFs thermoelectric material depends on an inherent structure is broken through, the problem that the thermal conductivity lacks an active regulation and control mechanism is solved, a basis is provided for subsequent optimization of the conductivity and the Seebeck coefficient, and implementation of a high power factor and a ZT value is facilitated.

The present application belongs to the technical field of material thermoelectric effect measurement, and particularly relates to a diamond anvil cell high-pressure thermoelectric effect measurement device and a measurement method. The measurement device comprises a diamond anvil cell and a multifunctional bottom electrode arranged on the lower anvil surface of the diamond anvil cell. The bottom electrode comprises a heating wire, a thermoelectric voltage measurement electrode, and first and second temperature measurement electrodes which are independently arranged and constitute a sample measurement area. During measurement, the sample to be measured is placed in the measurement area, a platinum strip is connected to the electrode and a measuring instrument to form a measurement system, after pressure calibration and temperature calibration, the heating wire is powered to establish a stable temperature difference and apply a vertical magnetic field, the temperature difference and voltage value are obtained through the electrodes and the measuring instrument, and then the Seebeck coefficient and the Nernst coefficient are calculated. The method can realize in-situ high-precision measurement of thermoelectric parameters of two-dimensional materials under high pressure, extremely low temperature and strong magnetic field environment, and provides key technical support for the research of thermoelectric materials in extreme environment and the development of devices.

To provide a liquid thermoelectric conversion element in which a small heat flow causes a large temperature difference between a positive electrode and a negative electrode to obtain high electromotive force, and a method for controlling the electrochemical Seebeck coefficient of the liquid thermoelectric conversion element.SOLUTION: A liquid thermoelectric conversion element 10 includes a first electrode 21, a second electrode 22, and an electrolytic solution 30 interposed between the first electrode 21 and the second electrode 22, and the electrolytic solution 30 contains an organic solvent, and oxide ions, and reduction ions.SELECTED DRAWING: Figure 1

A wearable wireless temperature monitoring device includes a micromachined thermocouple probe fabricated on a Silicon-On-Insulator (SOI) substrate, including an electrically insulated housing and a microneedle probe. A doped silicon (Si)Zchrome (Cr)Zgold (Au) junction on the microneedle probe provides a Seebeck coefficient of approximately 447 μV / °C. The device further includes a wireless data communication transceiver positioned in the housing for continuous real-time temperature monitoring. The microneedle has a diameter of less than 100 microns and a submicron sharp tip for minimally invasive temperature measurements.

Provided are: a thermoelectric element which has high thermoelectric conversion efficiency and is capable of obtaining a high ZT value; and a method for manufacturing the thermoelectric element. A thermoelectric element according to the present invention is provided with: a first thermoelectric material part (1) having one end part (1a) and the other end part (1b); a second thermoelectric material part (2) that is directly bonded to the first thermoelectric material part or is bonded to the first thermoelectric material part via a conductor (2a); and a pair of electrodes (3) connected to the first thermoelectric material portion, the first thermoelectric material portion having an absolute value of a Seebeck coefficient higher than that of the second thermoelectric material portion and a resistivity higher than that of the second thermoelectric material portion, the pair of electrodes being connected to one end portion side and the other end portion side of the first thermoelectric material portion separately from each other.

The present disclosure relates to an ion thermoelectric elastomer, which exhibit excellent thermal and air stability as well as excellent mechanical properties even under tensile stretching by adjusting poly(ethylene glycol) diacrylate (PEGDA), 2-hydroxyethyl acrylate (2-HEA), and an ion conductive dopant to a certain content range, and exhibit excellent ionic thermoelectric properties compared to conventional materials by having a high Seebeck coefficient and ionic conductivity, and a thermoelectric element including the same. Accordingly, the thermoelectric element using the ion thermoelectric elastomer according to the present disclosure as a thermoelectric material exhibits excellent mechanical performance and thermal stability, and thus exhibits excellent and stable ionic thermoelectric properties, such as excellent compatibility with a high-temperature curved surface or skin curvature, while generating an output voltage even in various environments.

The application relates to the technical field of a thermoelectric material performance detection system based on a thermoelectric textile, and particularly discloses a thermoelectric material performance detection system based on a thermoelectric textile. The system comprises a temperature control loading platform, an electric heating signal acquisition unit, a computer vision strain sensing unit, an adaptive deformation compensation module and a central processing unit; the temperature control loading platform applies a controllable temperature gradient and contact pressure, the electric heating signal acquisition unit synchronously acquires voltage and current signals, the computer vision unit analyzes full-field strain through image sequences, the adaptive deformation compensation module dynamically corrects the electric heating signal in combination with a physical information neural network, and accurate Seebeck coefficients and electric conductivities are output. Through multi-modal sensing and physical constraint model fusion, the application realizes high-fidelity characterization of the performance of the easily-deformable thermoelectric textile under dynamic load, and improves test accuracy and repeatability.

To provide a novel thermoelectric material that exhibits goniopolarity in a low-temperature region and is made from inexpensive raw materials, and to provide a horizontal thermoelectric module using this thermoelectric material and a method for manufacturing this thermoelectric material. The thermoelectric material is represented by the following formula (1), and the in-plane Seebeck coefficient (S IP ) and the interfacial Seebeck coefficient (S CP ) is 20 μV / K or more. Mg 3-x+d Y x Bi 2-y Sb y (1) (In formula (1), 0.00≦x≦1.00, 0.05≦y≦1.00, and −0.10≦d≦1.00.)

The invention relates to the field of thermocouple parameter correction, in particular to a thin film thermocouple Seebeck coefficient correction method based on static calibration, and aims to solve the problem of inconsistent Seebeck coefficient measurement results caused by different static calibration programs. The method comprises the following steps: sequentially executing a first calibration program and a second calibration program for the same thermocouple; when the second calibration program is executed, the thermoelectromotive force of the thermocouple and the temperature of the leading-out end are measured and recorded synchronously; based on the obtained data, first and second initial Seebeck coefficients under the first and second calibration programs are calculated respectively; determining a first program correction factor based on the second initial Seebeck coefficient, the temperature of the measuring end and the recorded temperature of the leading-out end; and in actual temperature measurement, when temperature measurement is carried out by adopting configuration the same as that of the second calibration program, the actually measured initial Seebeck coefficient, the measurement end temperature, the leading-out end temperature and the first program correction factor are substituted into a preset correction model together, and the corrected Seebeck coefficient is obtained through calculation.

The invention discloses a thermopile sensor based on monocrystalline silicon and a metasurface and a preparation method of the thermopile sensor. The preparation method comprises the following steps: cleaning and drying a silicon wafer on an insulating layer, and etching the monocrystalline silicon on the top layer to form a strip-shaped thermocouple strip; the method comprises the following steps: depositing a silicon dioxide layer on the upper layer of a thermocouple strip, etching to form an interconnected through hole, depositing a first metal layer, filling the interconnected through hole, etching and reserving a part interconnected with the thermocouple strip and a part located in a thermocouple region, and sequentially depositing a passivation layer and a second metal layer on the first metal layer, and etching the second metal layer to form a metasurface, etching the passivation layer to form a local opening, and performing cavity etching on the silicon wafer under the insulating layer to obtain the thermopile sensor with the thermopile suspension film structure. According to the preparation method, the Seebeck coefficient is improved by preparing the monocrystalline silicon thermocouple structure, the infrared absorption efficiency is improved by preparing the metasurface structure, and the detected output voltage is improved while the chip size and the process complexity are not increased.

The invention provides a lignin synergistically enhanced thermoelectric self-repairing hydrogel with a high Seebeck coefficient as well as a preparation method and application of the lignin synergistically enhanced thermoelectric self-repairing hydrogel. The preparation method comprises the following steps: modifying alkali lignin through polyethylene glycol to obtain lignin-polyethylene glycol, then adding the lignin-polyethylene glycol into a polyethylene glycol aqueous solution containing acrylate, acrylamide monomers, metal salt and an inorganic micromolecule thermoelectric material, stirring and uniformly mixing, and finally adding an initiator, stirring and polymerizing to obtain the thermoelectric material. The lignin synergistically enhanced thermoelectric self-repairing hydrogel with the high Seebeck coefficient is successfully prepared. The thermoelectric self-repairing hydrogel has excellent mechanical performance, self-repairing performance and thermoelectric conversion efficiency. According to the thermoelectric self-repairing hydrogel, anion migration is limited through carboxyl, cation conduction is enhanced through a polyethylene glycol chain segment, the anion and cation migration rate difference is bidirectionally increased, then the Seebeck coefficient is increased, and the Seebeck coefficient obtained through fitting calculation reaches 21.8 mV / K; the problems that an existing thermoelectric self-repairing hydrogel is low in seebeck coefficient and low in thermoelectric conversion efficiency are solved.

The application discloses a high-temperature surface contact thermal resistance elimination method based on double thermocouple compensation, and belongs to the technical field of material thermal performance characterization and testing. The method comprises the following steps: synchronously collecting double thermocouple temperatures, obtaining a temperature difference signal through filtering, calibration and environment correction; calculating a real-time heat flow density according to the corrected temperature difference, the Seebeck coefficient and a dynamic correction factor; establishing a nonlinear dynamic coupling model containing a contact thermal resistance parameter, and dividing a temperature interval; online identifying the contact thermal resistance parameter by using an adaptive recursive least square algorithm, and generating a dynamic thermal resistance compensation value; and applying the compensation value to the double thermocouple signals according to a weight, and outputting an accurate high-temperature surface temperature. The method adopts a data acquisition and preprocessing strategy, a dynamic heat flow correction strategy, a nonlinear segmented modeling strategy, an adaptive online identification strategy and a refined compensation output strategy, can effectively eliminate the influence of high-temperature surface contact thermal resistance, and significantly improves the accuracy and reliability of temperature measurement under a high-temperature environment.