62 results about "Seebeck coefficient" patented technology

The invention discloses a high-temperature surface contact thermal resistance elimination method based on double thermocouple compensation, and belongs to the technical field of material thermal property characterization and testing. The method comprises the following steps: synchronously acquiring double-thermocouple temperature, and obtaining a temperature difference signal through filtering calibration and environment correction; calculating the real-time heat flux density according to the corrected temperature difference, the Seebeck coefficient and the dynamic correction factor; establishing a nonlinear dynamic coupling model containing contact thermal resistance parameters, and performing temperature interval division; identifying a contact thermal resistance parameter on line by adopting a self-adaptive recursive least square algorithm, and generating a dynamic thermal resistance compensation value; and applying the compensation value to a double-thermocouple signal according to the weight, and outputting accurate high-temperature surface temperature. According to the method, data acquisition and preprocessing, dynamic heat flow correction, nonlinear segmented modeling, self-adaptive online identification and refined compensation output strategies are adopted, the influence of high-temperature surface contact thermal resistance can be effectively eliminated, and the accuracy and reliability of temperature measurement in the high-temperature environment are remarkably improved.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention relates to an ionic redox couple thermoelectric cement-based composite material, the composite material comprises a cement matrix and redox couples, and the redox couples exist in pores of the cement matrix; wherein the redox pairs are K4 [Fe (CN) 6] and K3 [Fe (CN) 6], and the porosity of the cement matrix is 25%-50%. According to the invention, the migration of ions in a cement matrix is regulated and controlled by introducing the redox couple, so that a relatively high Seebeck coefficient, conductivity and power factor are achieved while good mechanical properties are maintained, and the thermoelectric conversion efficiency is remarkably improved. Besides, the composite material can drive electrode reaction through temperature difference to generate a closed current loop, stable current output is achieved, and the problem of current output of a traditional ionic thermoelectric material is solved.

The invention belongs to the technical field of thermoelectricity, and relates to a preparation method and application of a quasi-solid thermoelectric material capable of realizing humidity stability by means of phase separation regulation, the preparation method comprises the following steps: dissolving a negatively charged hydrophilic monomer, an electrically neutral monomer, a cross-linking agent and a photoinitiator in a solvent to obtain a precursor solution, and carrying out an ultraviolet polymerization reaction to form polyelectrolyte gel; mixing the eutectic solvent with an electrolyte aqueous solution containing redox ion pairs and lithium chloride to obtain a quaternary electrolyte system; and immersing the gel into a quaternary electrolyte system, and fully replacing the internal solution through a diffusion effect to obtain the quasi-solid thermoelectric material with stable humidity. The thermoelectric material has the advantages of excellent Seebeck coefficient, good stability, high mechanical strength, large power density and the like, can supply power to wearable electronic products in an actual humidity fluctuation environment, breaks through the main bottleneck of actual application of quasi-solid ionic thermoelectric materials based on ionized water gel, and is wide in application prospect.

The invention discloses a semiconductor cooler refrigeration performance evaluation method and system, and relates to the semiconductor refrigeration technology, and the method comprises the steps: building a TEC refrigeration model considering the Peltier effect, Joule heat, heat conduction and Thomson effect; solving the established TEC refrigeration model to obtain Seebeck coefficients, TEC average resistance and TEC average thermal conductivity under different hot surfaces; establishing a function mapping relation based on the Seebeck coefficients, the TEC average resistance and the TEC average thermal conductivity under different heat surfaces obtained by solving; and constructing a refrigerating capacity and refrigerating temperature equation according to the established function mapping relation to evaluate the TEC refrigerating effect. The TEC characteristic function relation changing along with the temperature can be established on the basis of a small amount of TEC measured data, and therefore the TEC refrigeration temperature, the refrigeration capacity, the control voltage, the control current and other performance data can be rapidly and accurately calculated.

This invention discloses a thermoelectric module with intrinsic open-circuit protection and its protection method. The thermoelectric module includes multiple thermoelectric units connected in series and at least one bidirectional protection device. The bidirectional protection device is connected in parallel with at least one of the thermoelectric units and is a semiconductor device with bidirectional avalanche breakdown characteristics. Its breakdown voltage satisfies: where is the normal operating terminal voltage of the thermoelectric unit, α is the absolute value of the Seebeck coefficient, is the maximum design temperature difference, and is the voltage across the faulty unit during an open-circuit fault. During normal operation, the protection device is high-resistance cutoff; during a fault, it avalanche conduction forms a bypass. This invention also provides an open-circuit protection method for the thermoelectric module, including a threshold determination step and a voltage triggering step. This invention achieves hardware-level passive fault tolerance, with fast response speed and high reliability.

This invention discloses a method for optimizing the geometric parameters of a thermoelectric arm in a thermoelectric power generation system, relating to the field of thermoelectric power generation. The method includes: constructing a three-dimensional steady-state multiphysics coupled model of the thermoelectric power generation system; incorporating the height and cross-sectional area of ​​the thermoelectric arm as core geometric parameters to be optimized; and configuring the Seebeck coefficient, electrical conductivity, and thermal conductivity parameters corresponding to the thermoelectric material; setting boundary conditions for the model, including the target temperature at the hot end of the thermoelectric arm, the fluid velocity boundary corresponding to the cold end heat dissipation, and the system load resistance boundary, to ensure the model remains consistent with the actual working scenario. This invention improves model adaptation accuracy by constructing a multiphysics coupled model that fits the actual working conditions and dynamically adjusting material-related parameters. Combined with a parameterized scanning strategy with dynamic step sizes, it improves scanning efficiency while ensuring optimization effectiveness. The dual-objective optimization based on dynamic weights can flexibly adapt to different power supply requirements.

The invention relates to the technical field of thermoelectric material testing, and discloses a thermoelectric material testing method and system suitable for a high-intensity magnetic field. The method comprises the following steps: filling a thermoelectric material on a sample table in a sample rod, and vacuumizing the interior of the sample rod; heating the two sides of the sample table at different degrees, measuring the temperature of the two sides of the sample table, establishing a temperature difference, and measuring the voltage value of the thermoelectric material under the temperature difference to obtain a potential difference; performing linear fitting on the temperature difference and the potential difference to obtain a Seebeck coefficient; heating the two sides of the sample table to the same degree to enable the temperatures of the two sides of the sample table to be the same, measuring the resistance value of the thermoelectric material, and calculating the conductivity of the thermoelectric material. According to the invention, the Seebeck coefficient and the conductivity of the sample can be measured in a strong magnetic field.

The application discloses a ferroelectric local field enhanced polarized photoelectric detector and a preparation method thereof, and relates to the technical field of polarized photoelectric detection. The polarized photoelectric detector is observed from bottom to top and sequentially comprises a substrate, a two-dimensional semiconductor layer, a metal electrode pair and a ferroelectric film layer. The material of the two-dimensional semiconductor layer is black phosphorus. The material of the ferroelectric film layer is polyvinyl fluoride-based ferroelectric polymer. The metal electrode pair comprises a first metal electrode and a second metal electrode. A channel structure formed between the first metal electrode and the second metal electrode exposes part of the two-dimensional semiconductor layer. An in-plane PN junction is formed by part of the two-dimensional semiconductor layer exposed after the ferroelectric film layer is electrode polarized. The strong local field of the ferroelectric film changes the Seebeck coefficient and the conductivity of the black phosphorus in the armchair direction and the zigzag direction, enhances the photocurrent in the armchair direction, and greatly improves the polarization detection ratio of the polarized photoelectric detector.

The application discloses a Td-WTe2 / 1T'-MoTe2 heterojunction device for room-temperature photoelectric detection and a preparation method and application thereof. The heterojunction device is composed of Td-WTe2 and 1T'-MoTe2, and the two are connected through interlayer van der Waals force in an overlapping area. When light irradiates the overlapping area or a neighboring area thereof, a photo-thermal-electric response can be generated due to the difference in Seebeck coefficients of the two. The application provides a device scheme for realizing room-temperature photoelectric detection by utilizing the difference in thermoelectric properties of two specific materials without relying on a traditional semiconductor depletion region or an asymmetric light irradiation condition, and has the advantages of room-temperature operation, self-power supply, near-infrared response and fast response, and has important value in the field of photoelectric detection.

The invention discloses a thermoelectric material and a preparation method thereof, the chemical formula of the thermoelectric material is K2Bi8 + xS13, the thermoelectric material is n-type, and x is more than 0 and less than or equal to 0.004. The preparation method of the thermoelectric material comprises the following steps: (1) a high-temperature smelting step: in a vacuum environment, performing high-temperature smelting treatment on raw materials weighed according to a stoichiometric ratio to obtain a K2Bi8 + xS13 cast ingot; and (2) a densification step: grinding the K2Bi8 + xS13 cast ingot into powder, and performing spark plasma sintering treatment on the powder under a vacuum condition to obtain a K2Bi8 + xS13 thermoelectric material block, wherein the spark plasma sintering treatment is carried out under the pressure of 40 to 50 MPa. The K2Bi8 + xS13 thermoelectric material disclosed by the invention has good conductivity and Seebeck coefficient and relatively low lattice thermal conductivity, and has a good application prospect.

The invention relates to the technical field of nano composite materials, and discloses a flexible polymer composite thermoelectric material with a multilevel structure and a preparation method thereof, the material is a flexible self-supporting film, and comprises an MOF matrix, a single-walled carbon nanotube and a conductive polymer coating layer; the material has a hierarchical pore structure of micropores, mesopores and macropores. A mesoporous / macroporous structure is regulated and controlled through a PS microsphere template, a micropore-mesoporous-macroporous hierarchical pore structure is constructed in combination with Cu3 (BTC) 2 intrinsic micropores, the pore size, the pore size distribution and the porosity are systematically regulated, the scattering effect on phonons with different wavelengths is enhanced, and accurate regulation and control of the thermal conductivity of the material are realized. According to the design, the limitation that the thermal conductivity of an existing MOFs thermoelectric material depends on an inherent structure is broken through, the problem that the thermal conductivity lacks an active regulation and control mechanism is solved, a basis is provided for subsequent optimization of the conductivity and the Seebeck coefficient, and implementation of a high power factor and a ZT value is facilitated.

The present application belongs to the technical field of material thermoelectric effect measurement, and particularly relates to a diamond anvil cell high-pressure thermoelectric effect measurement device and a measurement method. The measurement device comprises a diamond anvil cell and a multifunctional bottom electrode arranged on the lower anvil surface of the diamond anvil cell. The bottom electrode comprises a heating wire, a thermoelectric voltage measurement electrode, and first and second temperature measurement electrodes which are independently arranged and constitute a sample measurement area. During measurement, the sample to be measured is placed in the measurement area, a platinum strip is connected to the electrode and a measuring instrument to form a measurement system, after pressure calibration and temperature calibration, the heating wire is powered to establish a stable temperature difference and apply a vertical magnetic field, the temperature difference and voltage value are obtained through the electrodes and the measuring instrument, and then the Seebeck coefficient and the Nernst coefficient are calculated. The method can realize in-situ high-precision measurement of thermoelectric parameters of two-dimensional materials under high pressure, extremely low temperature and strong magnetic field environment, and provides key technical support for the research of thermoelectric materials in extreme environment and the development of devices.

To provide a liquid thermoelectric conversion element in which a small heat flow causes a large temperature difference between a positive electrode and a negative electrode to obtain high electromotive force, and a method for controlling the electrochemical Seebeck coefficient of the liquid thermoelectric conversion element.SOLUTION: A liquid thermoelectric conversion element 10 includes a first electrode 21, a second electrode 22, and an electrolytic solution 30 interposed between the first electrode 21 and the second electrode 22, and the electrolytic solution 30 contains an organic solvent, and oxide ions, and reduction ions.SELECTED DRAWING: Figure 1

A wearable wireless temperature monitoring device includes a micromachined thermocouple probe fabricated on a Silicon-On-Insulator (SOI) substrate, including an electrically insulated housing and a microneedle probe. A doped silicon (Si)Zchrome (Cr)Zgold (Au) junction on the microneedle probe provides a Seebeck coefficient of approximately 447 μV / °C. The device further includes a wireless data communication transceiver positioned in the housing for continuous real-time temperature monitoring. The microneedle has a diameter of less than 100 microns and a submicron sharp tip for minimally invasive temperature measurements.

The application relates to the technical field of a thermoelectric material performance detection system based on a thermoelectric textile, and particularly discloses a thermoelectric material performance detection system based on a thermoelectric textile. The system comprises a temperature control loading platform, an electric heating signal acquisition unit, a computer vision strain sensing unit, an adaptive deformation compensation module and a central processing unit; the temperature control loading platform applies a controllable temperature gradient and contact pressure, the electric heating signal acquisition unit synchronously acquires voltage and current signals, the computer vision unit analyzes full-field strain through image sequences, the adaptive deformation compensation module dynamically corrects the electric heating signal in combination with a physical information neural network, and accurate Seebeck coefficients and electric conductivities are output. Through multi-modal sensing and physical constraint model fusion, the application realizes high-fidelity characterization of the performance of the easily-deformable thermoelectric textile under dynamic load, and improves test accuracy and repeatability.

To provide a novel thermoelectric material that exhibits goniopolarity in a low-temperature region and is made from inexpensive raw materials, and to provide a horizontal thermoelectric module using this thermoelectric material and a method for manufacturing this thermoelectric material. The thermoelectric material is represented by the following formula (1), and the in-plane Seebeck coefficient (S IP ) and the interfacial Seebeck coefficient (S CP ) is 20 μV / K or more. Mg 3-x+d Y x Bi 2-y Sb y (1) (In formula (1), 0.00≦x≦1.00, 0.05≦y≦1.00, and −0.10≦d≦1.00.)

The invention relates to the field of thermocouple parameter correction, in particular to a thin film thermocouple Seebeck coefficient correction method based on static calibration, and aims to solve the problem of inconsistent Seebeck coefficient measurement results caused by different static calibration programs. The method comprises the following steps: sequentially executing a first calibration program and a second calibration program for the same thermocouple; when the second calibration program is executed, the thermoelectromotive force of the thermocouple and the temperature of the leading-out end are measured and recorded synchronously; based on the obtained data, first and second initial Seebeck coefficients under the first and second calibration programs are calculated respectively; determining a first program correction factor based on the second initial Seebeck coefficient, the temperature of the measuring end and the recorded temperature of the leading-out end; and in actual temperature measurement, when temperature measurement is carried out by adopting configuration the same as that of the second calibration program, the actually measured initial Seebeck coefficient, the measurement end temperature, the leading-out end temperature and the first program correction factor are substituted into a preset correction model together, and the corrected Seebeck coefficient is obtained through calculation.

The invention discloses a thermopile sensor based on monocrystalline silicon and a metasurface and a preparation method of the thermopile sensor. The preparation method comprises the following steps: cleaning and drying a silicon wafer on an insulating layer, and etching the monocrystalline silicon on the top layer to form a strip-shaped thermocouple strip; the method comprises the following steps: depositing a silicon dioxide layer on the upper layer of a thermocouple strip, etching to form an interconnected through hole, depositing a first metal layer, filling the interconnected through hole, etching and reserving a part interconnected with the thermocouple strip and a part located in a thermocouple region, and sequentially depositing a passivation layer and a second metal layer on the first metal layer, and etching the second metal layer to form a metasurface, etching the passivation layer to form a local opening, and performing cavity etching on the silicon wafer under the insulating layer to obtain the thermopile sensor with the thermopile suspension film structure. According to the preparation method, the Seebeck coefficient is improved by preparing the monocrystalline silicon thermocouple structure, the infrared absorption efficiency is improved by preparing the metasurface structure, and the detected output voltage is improved while the chip size and the process complexity are not increased.

The invention provides a lignin synergistically enhanced thermoelectric self-repairing hydrogel with a high Seebeck coefficient as well as a preparation method and application of the lignin synergistically enhanced thermoelectric self-repairing hydrogel. The preparation method comprises the following steps: modifying alkali lignin through polyethylene glycol to obtain lignin-polyethylene glycol, then adding the lignin-polyethylene glycol into a polyethylene glycol aqueous solution containing acrylate, acrylamide monomers, metal salt and an inorganic micromolecule thermoelectric material, stirring and uniformly mixing, and finally adding an initiator, stirring and polymerizing to obtain the thermoelectric material. The lignin synergistically enhanced thermoelectric self-repairing hydrogel with the high Seebeck coefficient is successfully prepared. The thermoelectric self-repairing hydrogel has excellent mechanical performance, self-repairing performance and thermoelectric conversion efficiency. According to the thermoelectric self-repairing hydrogel, anion migration is limited through carboxyl, cation conduction is enhanced through a polyethylene glycol chain segment, the anion and cation migration rate difference is bidirectionally increased, then the Seebeck coefficient is increased, and the Seebeck coefficient obtained through fitting calculation reaches 21.8 mV / K; the problems that an existing thermoelectric self-repairing hydrogel is low in seebeck coefficient and low in thermoelectric conversion efficiency are solved.

The application discloses a high-temperature surface contact thermal resistance elimination method based on double thermocouple compensation, and belongs to the technical field of material thermal performance characterization and testing. The method comprises the following steps: synchronously collecting double thermocouple temperatures, obtaining a temperature difference signal through filtering, calibration and environment correction; calculating a real-time heat flow density according to the corrected temperature difference, the Seebeck coefficient and a dynamic correction factor; establishing a nonlinear dynamic coupling model containing a contact thermal resistance parameter, and dividing a temperature interval; online identifying the contact thermal resistance parameter by using an adaptive recursive least square algorithm, and generating a dynamic thermal resistance compensation value; and applying the compensation value to the double thermocouple signals according to a weight, and outputting an accurate high-temperature surface temperature. The method adopts a data acquisition and preprocessing strategy, a dynamic heat flow correction strategy, a nonlinear segmented modeling strategy, an adaptive online identification strategy and a refined compensation output strategy, can effectively eliminate the influence of high-temperature surface contact thermal resistance, and significantly improves the accuracy and reliability of temperature measurement under a high-temperature environment.

The invention discloses a preparation method of a double-layer PEDOT: PSS (poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)) film with high conductivity and Seebeck coefficient. The method comprises the following steps: adding inorganic acid into an original PEDOT: PSS solution, and mixing to obtain a high-conductivity PEDOT: PSS solution; the method comprises the following steps: coating a substrate with a high-conductivity PEDOT: PSS solution, and drying to form a high-conductivity PEDOT: PSS layer A on the substrate; the preparation method comprises the following steps: mixing an original PEDOT: PSS solution with water-soluble salt to obtain a salt-containing mixed solution; adding a dimethyl sulfoxide or ethylene glycol solution into the salt-containing mixed solution, and further stirring to obtain a PEDOT: PSS solution with a high Seebeck coefficient; coating a PEDOT: PSS solution with a high Seebeck coefficient on the PEDOT: PSS layer A with high conductivity, and drying the PEDOT: PSS layer A to obtain a PEDOT: PSS film with a double-layer structure; and finally, preparing an electrode on the surface of the PEDOT: PSS thin film with the double-layer structure. A double-layer independent functional layer structure is adopted, advantages and characteristics of the two layers are successfully integrated, collaborative optimization of thermoelectric performance parameters of the thin film is achieved, and the thermoelectric conversion performance of the device is remarkably improved.

A non-equal molar ratio high-entropy thermoelectric ceramic and a preparation method thereof, chemical formula is (Ca 1 / 3 Sr 1 / 3 Ba 1 / 3 ) 1‑x La x TiO3 (x=0.1~0.4). Through pre-sintering, discharge plasma sintering and reduction annealing process, the phase composition of A-site high-entropy perovskite thermoelectric ceramic is single-phase perovskite structure, and the inside of the ceramic is equiaxed grain, which is consistent with the cubic perovskite structure grain morphology. The elements Ca, Sr, Ba, La, Ti and O in the ceramic are uniformly distributed in the ceramic, and there is no agglomeration phenomenon. The A-site non-equal molar ratio high-entropy perovskite thermoelectric ceramic (Ca 1 / 3 Sr 1 / 3 Ba 1 / 3 ) 1‑x La x TiO3 obtained by the application has low thermal conductivity, high electrical conductivity and Seebeck coefficient, and further exhibits high thermoelectric ZT value, and the operation is simple, the time period is short, and an effective path is provided for preparing high-temperature thermoelectric materials.

A normal state deviation detection sensor (1A) is formed by alternately connecting a string-shaped first material (2a1) and a string-shaped second material (3a1) at junctions, the second material having a Seebeck coefficient different from that of the first material. A hot region or a cold region of an object of interest spans across at least one of the junctions between the first material and the second material. The normal state deviation detection sensor detects that the condition of the object has deviated from a normal state on the basis of a voltage generated through thermoelectric conversion of heat or cold received or emitted by at least one portion of the object.

The invention discloses a preparation method of a leather-based flexible thermoelectric sensor. The preparation method comprises the following specific steps: step 1, preparing strontium titanate nanoparticles; step 2, carrying out amination modification on the strontium titanate nanoparticles; step 3, preparation of amidated cross-linked strontium titanate / leather; step 4, preparing polypyrrole / strontium titanate / leather; and step 5, assembling the leather-based flexible thermoelectric sensor. According to the method, strontium titanate with a high Seebeck coefficient and polypyrrole with high conductivity are compounded into leather, so that the Seebeck coefficient and the conductivity of the leather are synergistically improved, the problem of limited thermoelectric conversion performance is solved, and an ideal sensing base material is provided for preparing a high-performance flexible thermoelectric sensor. The invention also discloses the leather-based flexible thermoelectric sensor prepared by using the method.

The application discloses a van der Waals asymmetric thermal resistance structure infrared thermoelectric detector and a preparation method thereof. The detector adopts a sandwich stacking structure and sequentially comprises, from bottom to top, a silicon nitride film, a middle electrode layer, a first electrode and a second electrode arranged on the silicon nitride film, and a thermoelectric conversion material layer, two ends of the thermoelectric conversion material layer being respectively in ohmic contact with the first electrode and the second electrode to form a suspended thermal bridge structure with the silicon nitride film as a support. The thermoelectric conversion material layer is selected from a low-thermal-conductivity high-Seebeck-coefficient van der Waals material, the contact area of the thermoelectric conversion material layer with the first electrode is greater than the contact area of the thermoelectric conversion material layer with the second electrode, and an asymmetric thermal resistance interface is formed between the first electrode and the second electrode, so that infrared thermoelectric detection is realized without an external bias. The application provides a novel infrared thermoelectric detector with high performance, self-power supply and compact structure.

The invention belongs to the technical field of material thermoelectric effect measurement, and particularly relates to a diamond anvil cell high-pressure thermoelectric effect measuring device and method. The measuring device comprises a diamond anvil cell and a multifunctional bottom electrode arranged on the lower anvil surface of the diamond anvil cell, wherein the bottom electrode comprises a heating wire, a thermoelectric voltage measuring electrode, a first temperature measuring electrode and a second temperature measuring electrode which are independently arranged and form a sample measuring area. During measurement, a sample to be measured is placed in a measurement area, electrodes and a measurement instrument are connected through platinum strips and wires to form a measurement system, after pressure calibration and temperature calibration, a heating wire is electrified to establish a stable temperature difference and apply a vertical magnetic field, the temperature difference and a voltage value are obtained through the electrodes and the measurement instrument, and then the Seebeck coefficient and the Nernst coefficient are calculated. According to the method, in-situ high-precision measurement of the thermoelectric parameters of the two-dimensional material can be realized in a high-voltage, extremely-low-temperature and high-intensity magnetic field environment, and key technical support is provided for thermoelectric material research and device development in an extreme environment.

The application provides a device for high-throughput and accurate characterization of low-temperature thermoelectric properties of materials, characterized by comprising a vacuum cavity, a probe assembly, a base temperature control module, a temperature gradient generator, a vacuum system, a signal generation and acquisition module. The device provided by the application can adopt two measurement modes: a conventional straight-line four-point probe method and an improved Van der Pauw method. The conventional straight-line four-point probe method is used for measuring the Seebeck coefficient and electrical conductivity of a bulk sample with a regular shape. The improved Van der Pauw method can be used for measuring the Seebeck coefficient and electrical conductivity of a thin film with an irregular shape.

The utility model discloses a sample stage structure for variable temperature thermoelectric parameter test system, including sample fixed frame, the bottom of sample fixed frame is equipped with variable temperature platform subassembly, the top of variable temperature platform subassembly is equipped with insulating plate, the top of insulating plate is equipped with seebeck coefficient probe subassembly, the top of seebeck coefficient probe subassembly is equipped with sample, the top of sample is equipped with sample clamp, the utility model discloses through the cooperation of silver table, liquid nitrogen pipeline and heating rod, place sample on silver table, can conveniently realize variable temperature measurement, and gold washer installs independently, is convenient to replace, and through the cooperation of sample fixed frame, sample clamp, seebeck coefficient probe subassembly, insulating plate, variable temperature platform subassembly, insulating washer, resistivity probe subassembly and mounting screw, sample sample is pressed on seebeck coefficient probe subassembly and resistivity probe subassembly, ensures good thermal contact, and keeps the temperature consistency of sample.

The invention discloses a preparation method of a modified composite cotton-based conductive fabric, and belongs to the field of intelligent textile materials. The method takes a cotton fabric as a substrate. A cotton fabric is soaked in a carbon nanotube (CNT) dispersion liquid to neutralize a PEDOT: PSS aqueous dispersion liquid to realize layer-by-layer loading, then a PEDOT molecular structure is optimized through DMSO post-treatment, the continuity and stability of a conductive network are improved, and the DMSO-PEDOT / CNT multifunctional conductive fabric is prepared. The prepared fabric retains the skin-friendly, breathable and bendable characteristics of the cotton fabric, the highest electric conductivity is 14.2 S / cm, the Seebeck coefficient reaches 23 [mu] V / K, the three functions of thermoelectric sensing, electromagnetic shielding and Joule thermal therapy are deeply coordinated, and the mechanical and use stability is excellent. The fabric can be widely applied to the fields of intelligent spinning, wearable electronics, electromagnetic protection, medical health and the like, and has good industrialization prospects and economic and social values.