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Middle-low temperature pseudo-binary electrothermal alloy and preparation process

A pseudo-binary, alloy technology, applied in the field of key components and materials, to achieve the effect of simple process, low cost and high thermoelectric performance

Inactive Publication Date: 2007-12-05
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some literatures reported the preparation of grain-oriented Bi by mechanical alloying and plasma sintering. 0.4 Sb 1.6 Te 3 Ternary material, the thermoelectric figure of merit Z at room temperature can reach 5.26×10 -3 / K, but further experimental verification is needed

Method used

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  • Middle-low temperature pseudo-binary electrothermal alloy and preparation process
  • Middle-low temperature pseudo-binary electrothermal alloy and preparation process

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Experimental program
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Effect test

Embodiment 1

[0020] In the pseudo binary alloy Bi 0.5 Sb 1.5 Te 3 Cu with a mole fraction of 0.015 was used in 4 Te 3 Substitute equimolar fraction of Bi 0.5 Sb 1.5 Te 3 . First according to the chemical formula Cu 4 Te 3 and Bi 0.5 Sb 1.5 Te 3 Cu, Bi, Sb and Te four elements with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. Cu 4 Te 3 The melting temperature of Bi is 1000-1100°C. 0.5 Sb 1.5 Te 3 The temperature is 700-800°C, the smelting and synthesis time is 10 hours each, and it is crushed after quenching and cooling. Then according to the chemical formula (Cu 4 Te 3 ) 0.015 -(Bi 0.5 Sb 1.5 Te 3 ) 0.985 Weigh the corresponding amount of Cu 4 Te 3 and Bi 0.5 Sb 1.5 Te 3 , placed in a vacuum quartz tube again, melted and synthesized at a temperature of 1000-1100 ° C for 10 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After 10 hours, it was quenched in water to obtain a block ...

Embodiment 2

[0022] In the pseudo binary alloy Bi 0.5 Sb 1.5 Te 3 Cu with a mole fraction of 0.025 was used in 4 Te 3 Substitute equimolar fraction of Bi 0.5 Sb 1.5 Te 3 . First according to the chemical formula Cu 4 Te 3 and Bi 0.5 Sb 1.5 Te 3 Cu, Bi, Sb and Te four elements with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. Cu 4 Te 3 The melting temperature of Bi is 1000-1100°C. 0.5 Sb 1.5 Te 3 The temperature is 700-800°C, the smelting and synthesis time is 10 hours each, and it is crushed after quenching and cooling. Then according to the chemical formula (Cu 4 Te 3 ) 0.025 -(Bi 0.5 Sb 1.5 Te 3 ) 0.975 Weigh the corresponding amount of Cu 4 Te 3 and Bi 0.5 Sb 1.5 Te 3 , placed in a vacuum quartz tube again, melted and synthesized at a temperature of 1000-1100 ° C for 10 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After 10 hours, it was quenched in water to obtain a block ...

Embodiment 3

[0024] In the pseudo binary alloy Bi 0.5 Sb 1.5 Te 3 Cu with a mole fraction of 0.05 was used in 4 Te 3 Substitute equimolar fraction of Bi 0.5 Sb 1.5 Te 3 . First according to the chemical formula Cu 4 Te 3 and Bi 0.5 Sb 1.5 Te 3 Cu, Bi, Sb and Te four elements with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. Cu 4 Te 3 The melting temperature of Bi is 1000-1100°C. 0.5 Sb 1.5 Te 3 The temperature is 700-800°C, the smelting and synthesis time is 10 hours each, and it is crushed after quenching and cooling. Then according to the chemical formula (Cu 4 Te 3 ) 0.05 (Bi 0.5 Sb 1.5 Te 3 ) 0.95 Weigh the corresponding amount of Cu 4 Te 3 and Bi 0.5 Sb 1.5 Te 3 , placed in a vacuum quartz tube again, melted and synthesized at a temperature of 1000-1100 ° C for 10 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After 10 hours, it was quenched in water to obtain a block pseu...

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Abstract

The present invention relates to new material, and is especially one kind of low and medium temp pseudo binary thermoelectric alloy with high thermoelectric Q value and its production process. The pseudo binary thermoelectric alloy with the composition of (Cu4Te3)0.025(Bi0.5Sb1.5Te3)0.975 is produced through the following steps: vacuum smelting Cu4Te3 at 1000-1100 deg.c and Bi0.5Sb1.5Te3 at 700-800 deg.c; smelting alloy (Cu4Te3)0.025(Bi0.5Sb1.5Te3)0.975 with Cu4Te3 and Bi0.5Sb1.5Te3 at 1000-1100 deg.c for 10 hr; ball milling into powder and plasma discharging sintering at 400 deg.c and 50 MPa for 10 min. The pseudo binary thermoelectric alloy has Seebeck coefficient of 148.0 MV / K, electrical conductivity of 10.8x10<4> / omega .m, thermal conductivity of 0.89 W / K.m, and maximum thermoelectric Q value ZT of 1.26. It is applied in making low and medium temp power generating devices.

Description

technical field [0001] The invention relates to the field of new materials, and is suitable for key components used in refrigeration for direct conversion of heat energy and electric energy or power generation at medium and low temperatures. Background technique [0002] Thermoelectric material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, small power supply devices in remote areas, etc. [0003] The comprehensive performance of thermoelectric materials is determined by the dimensionless figure...

Claims

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Application Information

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IPC IPC(8): C22C45/00C22C1/04B22F3/14
Inventor 崔教林修伟杰毛立鼎
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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