2results about How to "Improve thermoelectric performance" patented technology

This invention provides an integrated heat dissipation and power generation device structure, fabrication method, and chip structure. A bottom electrode, a thermoelectric layer, and a top electrode are sequentially formed on a flexible substrate. Two pre-reserved thermoelectric unit output terminals on the thermoelectric layer form a series circuit through the bottom and top electrodes, thus forming a flexible thin-film array thermoelectric structure. The fabrication method, employing a miniaturized unit design, effectively reduces volume waste. The use of a flexible substrate solves the problem of rigid electrodes easily breaking under bending and uneven thermal expansion, enhancing the device's durability and stability. The thermoelectric layer material of this integrated heat dissipation and power generation device structure can absorb and dissipate heat, and can reuse thermal energy to achieve thermoelectric power generation using the material's own thermoelectric properties. It achieves dual functions of thermal management and energy conversion using a single material, optimizing thermoelectric conversion efficiency.

This invention discloses a method for improving the thermoelectric performance of an AB ring through lateral coupling and optical field irradiation. The method includes: first, coupling two quantum dots QD1 and QD2 into a dual-quantum-dot structure via a tunnel junction; spatially confining the dual-quantum-dot structure; coupling the dual quantum dots into the AB ring via the tunnel junction; placing left and right electrodes on opposite sides of the AB ring structure; applying thermal radiation to create a temperature gradient between the left and right electrodes; injecting electrons into the AB ring electrodes, causing electron transport under the influence of the lateral coupling of the dual quantum dots and the temperature gradient; and applying an adjustable optical field to the dual-quantum-dot structure. By optimizing the tunneling coupling strength between the quantum dots and adjusting the optical field frequency, the thermoelectric transport characteristics of the system are synergistically controlled, thereby obtaining enhanced spin thermoelectric potential and spin ZT coefficient. This invention optimizes thermoelectric performance by increasing the tunneling coupling strength between quantum dots and improving the optical field frequency, providing a foundation for designing fast-response, high-efficiency, and low-energy-consumption thermoelectric devices.