81results about How to "Improve thermoelectric performance" patented technology

The invention relates to the related technical field of fabricated building outer walls, and discloses a severe cold area fabricated building outer wall based on a thermoelectric power generation technology, which comprises a fabricated wall body module, a thermoelectric power generation module, a heat collection structure module, a circuit connection module, an energy management module and a data monitoring module, the fabricated wall body module is a solid prefabricated concrete shear wall composed of an inner leaf wall plate, a heat preservation layer and an outer leaf wall plate, the heat collection structure module is fixedly installed on the outer wall of the fabricated wall body module, and the heat collection structure module comprises a heat absorption plate, a glass cover plate and a shell; according to the core component, the nickel-chromium alloy and the constantan alloy which are high in stability are directly welded for power generation, other technologies do not need to be combined, the core component can be directly applied to the building field, and under the condition that the power generation efficiency is guaranteed, the construction requirement of the building field is met as much as possible; and a brand new thought is developed for the energy-saving design of the fabricated building wall.

The invention provides a p-type AgSbSe2-based thermoelectric material with low thermal conductivity and a preparation method and application thereof, the chemical composition of the p-type AgSbSe2-based thermoelectric material with low thermal conductivity is Ag1 + ySb1-x-yBixSe2, x is more than 0 and less than or equal to 0.09, y is more than or equal to 0.01 and less than or equal to 0.02, and x and y are the ratio of the amount of substance. The preparation method of the thermoelectric material comprises the following steps: performing vacuum tube sealing on Ag particles, Bi particles, Sb particles and Se particles according to the mass ratio, sintering the sealed quartz tube in a muffle furnace, and cooling to obtain an alloy ingot; and grinding the alloy ingot to obtain powder, and sintering the powder to obtain the p-type AgSbSe2-based thermoelectric material. The p-type AgSbSe2-based thermoelectric material with low thermal conductivity has good conductivity and Zebeck coefficient, and low lattice thermal conductivity at low temperature, and the thermoelectric performance of the thermoelectric material is significantly improved.

The invention relates to an application of a quaternary ammonium salt polymer in a thermoelectric material. The structural formula of the quaternary ammonium salt polymer is as shown in formula I in the specification. According to the preparation method, the quaternary ammonium salt cationic polymer can be used as a dispersing agent to be applied to dispersion of the carbon nanotubes, and the carbon nanotube dispersion liquid with relatively good stability can be obtained by adjusting the ratio of the dispersing agent to the carbon nanotubes, so that the problem that the carbon nanotubes are easy to agglomerate in the dispersion process is greatly solved; therefore, the carbon nanotube film with high thermoelectric performance is prepared, and the thermoelectric performance of the carbon nanotube is effectively improved. # imgabs0 #

The invention relates to the field of MOF-based flexible thermoelectric materials, and discloses n-type MOF-based high-performance thermoelectric foam with ductility and a preparation method and application thereof, and the method comprises the following steps: dissolving 1, 3, 5-trimesic acid and copper acetate in a mixed solution of N, N-dimethylformamide, ethanol and deionized water to prepare a precursor solution; soaking foamed nickel in the precursor solution for hydrothermal reaction, then taking out, cleaning and drying to obtain a foamed nickel material with nickel-copper MOF uniformly grown on the surface; and soaking the foamed nickel material in a mixed solution of polyaniline and DMF (Dimethyl Formamide) so as to graft a conductive polymer on the surface and pore channels of the nickel-copper MOF, thereby obtaining the high-performance thermoelectric foam with ductility. The n-type MOF-based thermoelectric foam prepared by the invention has excellent ductility and thermoelectric performance, and also has the characteristics of metal plasticity, efficient thermoelectric performance and sensitivity to temperature change. The excellent thermoelectric performance and wide application scene of the material are far better than those of the currently reported n-type MOF-based thermoelectric material.

The invention provides a cubic tin selenide-based thermoelectric crystal and a preparation method thereof, and relates to the technical field of crystal synthesis. The preparation method comprises the following steps: weighing tin, silver, antimony and selenium simple substances, putting into a first container, vacuumizing and sealing; raising the temperature of the first container to 953-1373K, and keeping the temperature for 15-30 hours; taking out the alloy ingot after cooling, putting the alloy ingot into a second container, vacuumizing and sealing; and heating the second container to 973-1373K, carrying out heat preservation for 5-30h, cooling the second container to 923-1173K at a first cooling rate, cooling the second container to 873-923K at a second cooling rate, and cooling the second container to room temperature at a third cooling rate. The blocky cubic tin selenide single crystal material is prepared, the extremely high grain orientation degree is achieved, and the high-performance thermoelectric material can be obtained.

The invention relates to the field of thermoelectric semiconductor materials, and provides a method for improving the thermoelectric performance of a P-type extruded bismuth telluride-based material in order to solve the problems that the performance of a P-type material prepared through an optimized extrusion method is complex and the requirement for a device is high, the method comprises the following steps that (1) the bismuth telluride-based material is smashed into powder, and the particle size range of the powder is D50gt; 150 [mu] m, D90lt; 2000 [mu] m; and (2) carrying out compression molding, sintering, hot extrusion and annealing on the powder to obtain the P-type extruded bismuth telluride-based material. According to the method, the particle size of the powder before extrusion is controlled within a reasonable range, and the comprehensive performance of lattice thermal conductivity and mobility of the bismuth telluride-based material after extrusion is optimal, so that the thermoelectric performance of the extruded material is improved.

The invention relates to the technical field of nano materials, and provides a preparation method and application of a NaxCoO2 nano thermoelectric material synthesized by combining a self-propagating method and a cold pressing method. The invention aims to solve the problems of low production yield, complex process, low orientation degree, poor crystallinity and high cost of the conventional NaxCoO2 preparation method and improve the application of the NaxCoO2 in heat energy collection in a high-temperature area. According to the main scheme, the preparation method comprises the following steps: dissolving sodium nitrate and cobalt nitrate hexahydrate in a citric acid solution in proportion, heating to self-propagating combustion to obtain precursor powder, calcining, tabletting to obtain a NaxCoO2 polycrystalline block, and annealing to improve the compactness; the preparation method is used in the fields of thermoelectric power generation in a high-temperature area, refrigeration, medical treatment, sensing and the like, has the advantages of simple process, high preparation speed, high yield, low cost, good crystallinity and high thermoelectric performance, realizes quick preparation of the high-temperature thermoelectric material with high thermoelectric performance and high crystallinity, and has relatively high commercial and practical values.

The invention discloses a layered thermoelectric material with low lattice thermal conductivity and a preparation method thereof, and relates to the technical field of thermoelectric materials, the structural formula of the thermoelectric material is Ge1-xInxSb4Te7, and x is more than 0 and less than or equal to 0.1. According to the thermoelectric material, indium is doped in a GeSb4Te7 material through a hot pressed sintering preparation process, the lattice thermal conductivity of the GeSb4Te7 material can be effectively reduced, the Seebeck coefficient and the thermoelectric figure of merit of the GeSb4Te7 material can be improved, the problem that the lattice thermal conductivity of a Ge-Sb-Te-based layered material is generally high is solved, and material support is provided for application of the Ge-Sb-Te-based material in the fields of thermal barrier coatings, thermoelectric devices and the like.

The invention belongs to the technical field of intelligent monitoring, and particularly relates to a health condition monitoring system and a preparation method thereof. The system comprises a health condition monitoring mask and an upper computer, the health condition monitoring mask comprises a mask and a respiration monitoring unit, a heartbeat monitoring unit and a health condition monitoring unit which are arranged in the mask, and the upper computer comprises a display interface and a data processing module which is arranged in the display interface. The respiration monitoring unit comprises thermoelectric devices prepared from P-type and N-type semiconductor thermoelectric particles, the heartbeat monitoring unit is composed of MAX30102, a voltage stabilizing circuit, a decoupling capacitor and a pull-up resistor which are integrated on a flexible PCB, and the health condition monitoring unit is sewn in a mask and comprises an ADC conversion unit I, a microcontroller chip with a Bluetooth module and an integrated circuit bus. The upper computer comprises a display interface and a data processing module which are used for receiving monitoring data of the respiration monitoring unit and the heartbeat monitoring unit, matching the data of the respiration monitoring unit and the heartbeat monitoring unit into groups for multi-source fusion, and identifying and judging the health condition of a human body according to the data after multi-source fusion.

The invention belongs to the technical field of thermoelectric material preparation, and particularly relates to a high-thermoelectric-performance PEDOT: PSS / CNTs thermoelectric composite film and a preparation method thereof. The preparation method comprises the following steps: uniformly mixing PEDOT: PSS and CNTs to obtain a mixed solution; coating a substrate with the mixed solution to obtain a PEDOT: PSS / CNTs composite film; and carrying out surface treatment on the PEDOT: PSS / CNTs composite film by using an ionic liquid methanol solution to obtain the PEDOT: PSS / CNTs thermoelectric composite film. The PEDOT: PSS / CNTs thermoelectric thin film with high thermoelectric performance is obtained simply through two steps of operation of a physical blending method and ionic liquid surface treatment, the preparation method is simple, the thermoelectric performance is remarkably improved, and the obtained PEDOT: PSS / CNTs thermoelectric thin film has relatively high conductivity and Seebeck coefficient and also has a relatively high power factor.

The invention relates to a high-dispersion organic-inorganic composite flexible thermoelectric material and a preparation method thereof. The preparation method of the high-dispersion organic-inorganic composite flexible thermoelectric material comprises the following steps: (1) adding a carbon nanotube into a conjugated polymer A solution for dispersion, centrifuging and collecting a supernatant, then cooling or evaporating and concentrating the supernatant to separate out a solid, and filtering to obtain a conjugated polymer B; washing to remove the outer-layer conjugated polymer A which is not combined with the carbon nano tube by virtue of an intermolecular force, so as to obtain the high-dispersion carbon nano tube of the conjugated polymer A coated with the molecular layer thickness; and (2) mixing the high-dispersion carbon nanotubes coated with the molecular layer thickness conjugated polymer A with a conductive polymer B solution to form a film preparation solution, carrying out film formation to obtain an organic-inorganic composite flexible thermoelectric film, and then soaking the organic-inorganic composite flexible thermoelectric film in a doping solution, the high-dispersion organic-inorganic composite flexible thermoelectric material is obtained.

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

The invention belongs to the field of thermoelectric materials, and particularly relates to a preparation method of a carbon nanotube film with high thermoelectric performance. The preparation method comprises the following steps: uniformly mixing carbon nanotubes with a lignin solution, and carrying out ultrasonic dispersion to obtain a carbon nanotube dispersion liquid; centrifuging the carbon nano tube dispersion liquid until the carbon nano tubes in the carbon nano tube dispersion liquid are settled, removing supernate, dispersing in ammonia water, dispensing on a slide substrate, and drying to obtain the carbon nano tube film. According to the method, lignin is adopted to disperse the carbon nanotubes and is removed through centrifugation, the problem that the carbon nanotubes are prone to agglomeration in an aqueous solution is solved, meanwhile, the influence of non-conductive lignin on the electrical properties of the carbon nanotubes is removed, and the dispersity and thermoelectric properties of the carbon nanotubes are synergistically improved.

The invention discloses a rare earth element doped N-type Mg3Sb2-based thermoelectric material and a preparation method thereof, and belongs to the technical field of energy conversion. The chemical composition expression of the rare earth element doped N type Mg < 3 > Sb < 2 >-based thermoelectric material is Mg < 3-x > A < x > Sb < 1.5 > Bi < 0.49 > Te < 0.01 >, wherein A represents a rare earth element and can be selected from La, Tb, Er or Lu; 0 < x < = 0.05. According to the invention, a rare earth element is used as a donor dopant, a Mg3Sb2-based block thermoelectric material is obtained by combining vacuum solid-phase sintering with a rapid hot-pressing process, the Mg3Sb2-based block thermoelectric material is ground into a regular shape after being cut by a diamond wire, and Mg atmosphere annealing process treatment is carried out to compensate the Mg element volatilized in the heat treatment process, so that the thermoelectric material is obtained. The finally prepared N-type Mg3Sb2-based thermoelectric material shows relatively high conductivity and Seebeck coefficient and low thermal conductivity, has relatively excellent comprehensive thermoelectric performance, and has relatively great application potential in the technical field of energy conversion.

The invention belongs to the field of thermoelectric materials, and discloses a rapid preparation method of a high-performance inorganic plastic thermoelectric material, which comprises the following steps: (1) weighing elementary substance material powder corresponding to each element according to the nominal chemical dosage ratio of each element in the chemical formula of the inorganic plastic thermoelectric material; (2) mixing to obtain mixed powder; (3) putting the mixed powder into a quartz tube, vacuumizing and sealing; and (4) placing the vacuum-sealed quartz tube in a graphite crucible, then placing the crucible in an induction heating coil, heating to 1000-1100 DEG C, and carrying out heat preservation for 10-20 minutes to carry out induction heating smelting so as to obtain the inorganic plastic thermoelectric material cast ingot. According to the invention, the process of the preparation method is improved, based on induction heating, the rapid preparation of the inorganic plastic thermoelectric material can be realized only by utilizing induction heating to keep the temperature at 1000-1100 DEG C for 10-20 minutes, and the prepared inorganic plastic thermoelectric material has the characteristic of high performance in the aspects of thermoelectric performance and plasticity.

The invention discloses a BiCuSeO carbon nanodot composite thermoelectric material and a preparation method thereof. The method comprises the following steps: step 1, synthesizing carbon nanodots; step 2, in-situ synthesis of the BiCuSeO / carbon nanodots is carried out; 3, spark plasma sintering of the BiCuSeO / carbon nanodot composite powder is carried out, and the BiCuSeO / carbon nanodot composite thermoelectric material is obtained.BiCuSeO serves as a matrix, N-CDs nanophase is introduced, the carbon dots have the electron transfer property, the surfaces of the carbon dots contain a large number of holes and electrons, the carbon dots can serve as electron donors and electron acceptors at the same time, and therefore the efficiency of the thermoelectric material is improved; and an electron transfer phenomenon occurs under a proper condition, so that the N-CDs are dispersed and distributed at the grain boundary of the BiCuSeO parent phase to greatly improve the electrical transport performance, and meanwhile, a relatively large Seebeck coefficient is maintained, so that the thermoelectric performance is improved.

The invention relates to a flexible constantan thin film thermoelectric device with high power density and a preparation method and application thereof, the flexible constantan thin film device is formed by connecting a plurality of n-type constantan thin film supporting legs in series through copper wires, and the n-type constantan thin film supporting legs are composed of Cu55Ni42Mn3. Compared with the prior art, the preparation of the flexible thermoelectric thin film device utilizes the constantan metal bond connection characteristic, the constantan thin film material with the micron-order thickness is obtained through the rolling technology, the texture orientation with the optimal elastic modulus and the high dislocation density are achieved, the flexible thermoelectric thin film device has the excellent flexibility and elasticity, the preparation technology is simple, and the preparation cost is low. The assembled 10-leg flexible thermoelectric thin film device is far superior to a currently reported flexible thermoelectric device in the aspects of power density and bending flexibility. The metal film thermoelectric device overcomes the inherent rigidity of an inorganic thermoelectric material, has the characteristic of high power factor of constantan, and shows that the metal material has potential in the aspect of application of the flexible thermoelectric device.

The present invention discloses a SnTe-based thermoelectric material and a preparation method thereof, and relates to the field of thermoelectric materials, and in particular to a SnTe-based thermoelectric material with a multi-scale nanocomposite structure and a preparation method thereof. 1‑x Y x Te-5%Cu2Te, wherein x is 0, 0.01, 0.03, 0.05 or 0.07, which is prepared by using a high-purity metal element as a raw material, according to the stoichiometric ratio of the chemical formula, and after vacuum flame sealing, melt reaction quenching, and high temperature annealing, it is ground into powder, and vacuum discharge plasma sintering is performed to obtain a bulk SnTe-based thermoelectric material. Compared with the prior art, the present invention optimizes the hole carrier concentration and band structure of the SnTe material by co-doping SnTe with Cu and Y. At the same time, increasing the Y solid solubility allows the in-situ formation of a multi-scale nanostructure in SnTe, further reducing its thermal conductivity, thereby greatly improving the thermoelectric performance of the SnTe material.

The application discloses a SnTe-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectricity. The application adopts high-purity metal elements as raw materials, and the raw materials are mixed according to a stoichiometric ratio, and then a cast ingot is obtained through a melting reaction after vacuum packaging. Subsequently, the cast ingot is subjected to high-temperature annealing treatment. After the cast ingot subjected to the high-temperature annealing treatment is ground into powder, a dense block-shaped SnTe-based thermoelectric material is formed through discharge plasma sintering. The chemical formula of the SnTe-based thermoelectric material is Sn 2.9‑X W X Te 2.9 -(In2Te3) 0.03 -(Cu2Te) 0.18 The application significantly improves the thermoelectric figure of merit of the SnTe-based thermoelectric material and improves the thermoelectric performance of the SnTe-based thermoelectric material by doping tungsten elements in the SnTe matrix and compounding the two metal compounds of In2Te3 and Cu2Te.

The invention discloses a thermoelectric cement-based structure electrolyte, a cement-based thermal charging capacitor and a preparation method, the thermoelectric cement-based structure electrolyte comprises a cement matrix, and the cement matrix is formed by hardening cement paste uniformly doped with a water-soluble polymer and a two-dimensional MXene material; pores in the cement matrix are filled with an ion donor solution; the mass of the water-soluble polymer is 5-10% of that of the cement; the mass of the two-dimensional MXene material is 0.01%-0.1% of the mass of the cement. According to the invention, by doping the low-dosage water-soluble polymer and the two-dimensional MXene material into the cement paste, the pore distribution of the cement matrix is adjusted, the mechanical properties of the thermoelectric cement-based structure electrolyte are maintained and even improved, and the ternary composite system synergistically obtains a high Seebeck coefficient and ionic conductivity. According to the cement-based thermal charging capacitor, the thermoelectric cement-based structure electrolyte is used as an electrolyte layer, a double-electric-layer capacitor electricity storage electrode is compounded, and the good thermal power generation and electricity storage integration capacity is achieved under the temperature difference effect.

The present invention provides a processing and forming method of bismuth telluride thermoelectric material, including configuring P-type and N-type materials according to a predetermined molar ratio, and pre-treating the materials respectively, and then placing the pre-treated P-type and N-type materials respectively into a hot extrusion die containing a multi-stage variable diameter structure, and placing the pre-treated P-type and N-type materials together with the die into a heater at a temperature of 300°C to 500°C, applying a certain vertical pressure to the material, and under the combined action of temperature and pressure, the material passes through the inner cavity of the variable diameter hot extrusion die, and is discharged along the direction of the extrusion force to form a rod-shaped material with a certain cross-section, and then the rod-shaped material is heat-treated. Through experimental verification, the thermoelectric material prepared by the method of the present invention has an orientation degree of at least 16% higher than that of the material obtained by the existing processing method, a compressive strength of at least 6%, and a thermoelectric performance of at least 3%, and the thermoelectric performance and mechanical strength of the material are both improved.

The invention discloses a method for preparing a semi-metallic Co2MnGa thermoelectric material. First, Mn powder and Ga block are weighed according to a ratio, mixed, vacuum-sealed, heated for liquid-solid phase reaction to form a Mn-Ga alloy; then the obtained Mn-Ga alloy is ground into powder, Co powder is added in proportion to mix evenly, and pressed into a block; the obtained block is vacuum-sealed, heated for solid phase reaction, quenched and cooled; ground into powder, and discharge plasma sintering is performed to obtain a Co2MnGa block thermoelectric material. The semi-metallic Co2MnGa thermoelectric material of the present invention uses Mn powder, Ga block and Co powder as main raw materials, adopts step-by-step mixing, step-by-step reaction and discharge plasma sintering mechanism, can effectively improve the problems of Mn and Ga oxidation on the basis of simplifying the preparation process, ensure the composition uniformity of the obtained composite material, and at the same time is conducive to further improving the thermoelectric performance of the obtained Co2MnGa material, which is suitable for promotion and application.

The invention relates to the technical field of thermoelectric materials, in particular to a high-flexibility silver telluride thermoelectric thin film with a pearl scallop structure and a preparation method and application of the high-flexibility silver telluride thermoelectric thin film. The non-stoichiometric silver telluride thermoelectric film with a pearl scallop structure is rapidly prepared through an intermittent co-sputtering process under the conditions of room temperature and fixed working air pressure; the pearl scallop structure obviously improves the mechanical property and the thermoelectric property of the silver telluride thermoelectric thin film; after the silver telluride thermoelectric thin film is bent and circulated for 5000 times, the surface has no crack, the resistance is only increased by 20%, and excellent flexibility is shown; and meanwhile, the power factor can reach 51.92 mu W m <-1 > K <-2 > under the room temperature condition, and the material has good thermoelectric performance, meets the requirements of flexible wearable thermoelectric devices, and has potential commercial application prospects.

The application provides a medium-high temperature p-type ZrNiSn-based half-Hasler thermoelectric material, a preparation method and application thereof. x Y x Zr 1‑2x NiSn, wherein x is a molar ratio, and the value range of x is 0.2-0.35. The medium-high temperature p-type ZrNiSn-based half-Hasler thermoelectric material provided by the application changes the majority carriers from electrons to holes, significantly reduces the lattice thermal conductivity, and obtains the p-type ZrNiSn-based thermoelectric material, thereby laying a foundation for developing high-power thermoelectric devices with matching n-type and p-type legs. The application has good application prospect and large-scale popularization potential in the fields of distributed low-grade waste heat recovery power generation and the like.

The invention discloses a Cu-Se-based high-entropy thermoelectric material capable of inhibiting Cu ion migration and a preparation method of the Cu-Se-based high-entropy thermoelectric material, and belongs to the technical field of high-entropy thermoelectric materials. The general formula of the Cu-Se-based high-entropy thermoelectric material is Cux (Pb < 1-y > M < y >) (InzSn < 1-z >) SemTn, x is equal to 1.2-1.8, y is equal to 0.2-0.8, z is equal to 0.1-0.3, m is equal to 0.4-0.9, n is equal to 0.1-0.15, and x, y, z, m and n are molar molecule numbers. The Cu-Se-based high-entropy thermoelectric material can form a more stable lattice structure by accurately controlling the molar ratio and particle size distribution of the elements, so that migration of Cu ions under high current or temperature gradient is inhibited, and the structural integrity and long-term stability of the material can be maintained.

The present invention provides a thermoelectric device based on highly elastic compressible graphene / organic composite foam and a preparation method thereof. The thermoelectric device comprises: a porous thermoelectric foam with a cylindrical or cubic main body, and the upper and lower surfaces are connected to copper sheets as upper and lower electrodes through conductive silver glue. The thermoelectric foam is prepared by mixing graphene, sodium chloride (NaCl), and polydimethylsiloxane (PDMS) in a certain proportion, stirring them thoroughly until they are uniform, pressing them tightly, putting them in an oven to heat and solidify them, and then soaking them in hot water until the NaCl is completely dissolved, and then putting them in an oven to dry and take them out. The thermoelectric foam and device provided by the present invention have good thermoelectric properties, excellent electrical and mechanical stability, and a simple preparation process and can be mass-produced, providing an effective solution for the design and application of high-performance flexible thermoelectric materials, and have broad application prospects in the field of flexible wearables.

The invention provides a TiCoSb-based semi-Heusler single crystal thermoelectric material. The chemical formula of the TiCoSb-based semi-Heusler single crystal thermoelectric material is Ti < 1-x-y > M < x > R < y > CoSb, wherein the M element comprises at least one of an Nb element, a Ta element, an Sc element and a V element, the R element comprises at least one of a Zr element and an Hf element, x is not larger than 0.07, and y is not larger than 0.25. According to the TiCoSb-based semi-Heusler single-crystal thermoelectric material, the preparation method and the thermoelectric device provided by the invention, the M element and the alloying R metal element are doped at the Ti position according to the proportion, so that the performance regulation and control of the TiCoSb-based semi-Heusler single-crystal thermoelectric material are realized; the appropriate carrier concentration required by the thermoelectric material is provided through the heterovalent doping effect of M elements in different proportions, so that the power factor PF of the material is improved, and the electrical property of the material is improved; according to the present invention, by introducing the isoelectron alloying effect of the R elements with different proportions, the phonon scattering point location is provided, the thermal conductivity of the material is reduced, and the prepared Ti < 1-x-y > M < x > R < y > CoSb single crystal has good thermoelectric performance.

This invention discloses a rapid method for preparing SnSe crystals, shortening the crystal growth cycle from 260 hours to 52 hours. Compared to the traditional vertical gradient multi-temperature zone cooling method, this method overcomes the difficulty of heat dissipation in the central region during SnSe crystal growth by inserting a graphite rod at the center of the melt to achieve heat dissipation and balance the internal temperature zones. This allows for the successful growth of large SnSe single crystals in a shorter time while maintaining excellent thermoelectric properties. Specifically, the method involves first preparing a mixture according to stoichiometric proportions; then placing the mixture in a quartz tube and fixing a carbon rod at the center, followed by vacuum treatment; finally, placing the quartz tube in a dual-temperature zone vertical tube furnace to react and obtain the corresponding crystals. This invention shortens the crystal preparation time, improves production efficiency, and is applicable to mass production.

The present invention relates to the field of thermoelectric semiconductor materials. Aiming at the problem of additional pollution caused by the nano-sizing of materials, a method for preparing high-performance bismuth telluride-based thermoelectric materials is provided, comprising the following steps: 1) performing zone melting directional solidification on a bismuth telluride-based alloy ingot to obtain a crystal rod; 2) performing thermal deformation on the crystal rod obtained in step 1) to obtain a bulk material, wherein the deformation amount is greater than 1, and the thermal deformation is performed under uniaxial pressure, and the pressure direction is perpendicular to the texture direction of the zone melting crystal rod. The present invention thermally deforms the zone melting bulk material through a top-down method, thereby avoiding pollution caused by material refinement, directly introducing nano defects into the bulk material, refining the grains, reducing the thermal conductivity of the material, and improving the mechanical properties and thermoelectric properties of the material.

This invention provides an integrated heat dissipation and power generation device structure, fabrication method, and chip structure. A bottom electrode, a thermoelectric layer, and a top electrode are sequentially formed on a flexible substrate. Two pre-reserved thermoelectric unit output terminals on the thermoelectric layer form a series circuit through the bottom and top electrodes, thus forming a flexible thin-film array thermoelectric structure. The fabrication method, employing a miniaturized unit design, effectively reduces volume waste. The use of a flexible substrate solves the problem of rigid electrodes easily breaking under bending and uneven thermal expansion, enhancing the device's durability and stability. The thermoelectric layer material of this integrated heat dissipation and power generation device structure can absorb and dissipate heat, and can reuse thermal energy to achieve thermoelectric power generation using the material's own thermoelectric properties. It achieves dual functions of thermal management and energy conversion using a single material, optimizing thermoelectric conversion efficiency.