13results about How to "Improve thermoelectric performance" patented technology

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

The application discloses a SnTe-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectricity. The application adopts high-purity metal elements as raw materials, and the raw materials are mixed according to a stoichiometric ratio, and then a cast ingot is obtained through a melting reaction after vacuum packaging. Subsequently, the cast ingot is subjected to high-temperature annealing treatment. After the cast ingot subjected to the high-temperature annealing treatment is ground into powder, a dense block-shaped SnTe-based thermoelectric material is formed through discharge plasma sintering. The chemical formula of the SnTe-based thermoelectric material is Sn 2.9‑X W X Te 2.9 -(In2Te3) 0.03 -(Cu2Te) 0.18 The application significantly improves the thermoelectric figure of merit of the SnTe-based thermoelectric material and improves the thermoelectric performance of the SnTe-based thermoelectric material by doping tungsten elements in the SnTe matrix and compounding the two metal compounds of In2Te3 and Cu2Te.

The invention discloses a thermoelectric cement-based structure electrolyte, a cement-based thermal charging capacitor and a preparation method, the thermoelectric cement-based structure electrolyte comprises a cement matrix, and the cement matrix is formed by hardening cement paste uniformly doped with a water-soluble polymer and a two-dimensional MXene material; pores in the cement matrix are filled with an ion donor solution; the mass of the water-soluble polymer is 5-10% of that of the cement; the mass of the two-dimensional MXene material is 0.01%-0.1% of the mass of the cement. According to the invention, by doping the low-dosage water-soluble polymer and the two-dimensional MXene material into the cement paste, the pore distribution of the cement matrix is adjusted, the mechanical properties of the thermoelectric cement-based structure electrolyte are maintained and even improved, and the ternary composite system synergistically obtains a high Seebeck coefficient and ionic conductivity. According to the cement-based thermal charging capacitor, the thermoelectric cement-based structure electrolyte is used as an electrolyte layer, a double-electric-layer capacitor electricity storage electrode is compounded, and the good thermal power generation and electricity storage integration capacity is achieved under the temperature difference effect.

The invention relates to the technical field of thermoelectric materials, in particular to a high-flexibility silver telluride thermoelectric thin film with a pearl scallop structure and a preparation method and application of the high-flexibility silver telluride thermoelectric thin film. The non-stoichiometric silver telluride thermoelectric film with a pearl scallop structure is rapidly prepared through an intermittent co-sputtering process under the conditions of room temperature and fixed working air pressure; the pearl scallop structure obviously improves the mechanical property and the thermoelectric property of the silver telluride thermoelectric thin film; after the silver telluride thermoelectric thin film is bent and circulated for 5000 times, the surface has no crack, the resistance is only increased by 20%, and excellent flexibility is shown; and meanwhile, the power factor can reach 51.92 mu W m <-1 > K <-2 > under the room temperature condition, and the material has good thermoelectric performance, meets the requirements of flexible wearable thermoelectric devices, and has potential commercial application prospects.

This invention discloses a rapid method for preparing SnSe crystals, shortening the crystal growth cycle from 260 hours to 52 hours. Compared to the traditional vertical gradient multi-temperature zone cooling method, this method overcomes the difficulty of heat dissipation in the central region during SnSe crystal growth by inserting a graphite rod at the center of the melt to achieve heat dissipation and balance the internal temperature zones. This allows for the successful growth of large SnSe single crystals in a shorter time while maintaining excellent thermoelectric properties. Specifically, the method involves first preparing a mixture according to stoichiometric proportions; then placing the mixture in a quartz tube and fixing a carbon rod at the center, followed by vacuum treatment; finally, placing the quartz tube in a dual-temperature zone vertical tube furnace to react and obtain the corresponding crystals. This invention shortens the crystal preparation time, improves production efficiency, and is applicable to mass production.

This invention provides an integrated heat dissipation and power generation device structure, fabrication method, and chip structure. A bottom electrode, a thermoelectric layer, and a top electrode are sequentially formed on a flexible substrate. Two pre-reserved thermoelectric unit output terminals on the thermoelectric layer form a series circuit through the bottom and top electrodes, thus forming a flexible thin-film array thermoelectric structure. The fabrication method, employing a miniaturized unit design, effectively reduces volume waste. The use of a flexible substrate solves the problem of rigid electrodes easily breaking under bending and uneven thermal expansion, enhancing the device's durability and stability. The thermoelectric layer material of this integrated heat dissipation and power generation device structure can absorb and dissipate heat, and can reuse thermal energy to achieve thermoelectric power generation using the material's own thermoelectric properties. It achieves dual functions of thermal management and energy conversion using a single material, optimizing thermoelectric conversion efficiency.

The application provides a MEMS capacitive pressure sensor and a preparation and use method thereof, and relates to the technical field of sensors.The structure of the MEMS capacitive pressure sensor provided by the application mainly comprises a force-sensitive nanofilm, a temperature-sensitive nanofilm, a substrate and a base plate, the substrate and the base plate are separated into two independent sealed cavities, and the surface of the base plate opposite to the force-sensitive nanofilm is etched with a ladder-shaped structure.The application optimizes the capacitive-pressure response characteristics (when the external pressure acts, the force-sensitive nanofilm is deformed, and the linear coupling is generated by the change of the effective overlapping area and the interval between the force-sensitive nanofilm and the ladder-shaped structure), and combines with the in-situ temperature compensation of graphene, so that the MEMS capacitive pressure sensor provided by the application can realize high linearity of pressure measurement in a wide temperature range, and the technical problems of traditional devices, such as serious temperature crosstalk and narrow linear interval, are solved, thereby providing a new solution for high-precision and high-reliability pressure measurement.

The invention discloses a rare-earth-based half-Heusler alloy material as well as a preparation method and application thereof. The preparation method comprises the following steps: smelting Pt and Sb metal raw materials to obtain a precursor PtSb; carrying out secondary smelting on Lu and Re metal raw materials and the precursor PtSb to obtain a smelted cast ingot, and carrying out crushing, ball milling and sintering to obtain the rare-earth-based half-Heusler alloy material Lu1-xRexPtSb; re = Sc or Y, x represents atomic percent, and x is more than or equal to 0 and less than or equal to 1.0. According to the method, scandium, yttrium, lutetium, platinum and antimony serve as raw materials, the cast ingot is obtained through the two-step suspension smelting reaction, the method can control the intensity of the thermal chemical reaction, a large amount of heat instantly released by one-time feeding is avoided, the high-quality rare earth-based half-Heusler alloy material is obtained, the optimal peak thermoelectric figure of merit can reach 1.0 or above, and the thermal conductivity of the alloy material is greatly improved. The highest level reported in the prior art is exceeded.

The invention provides a novel thermoelectric power generation material based on an N-type PbSe crystal and a preparation method thereof, the chemical formula of the material is PbxAg1 + ySb1-ySex + 2, x is more than or equal to 10 and less than or equal to 60, and y is more than or equal to 0.075 and less than or equal to 0.15; the ZT value of the material is not lower than 0.4 at the room temperature and not lower than 0.9 at the high temperature, and the average thermoelectric figure of merit ZTave in the range from the room temperature to 800 K is larger than or equal to 0.85. The N-type PbSe crystal material provided by the invention can be applied to thermoelectric power generation, the average ZT value in the whole temperature range is greater than or equal to 0.85, the thermoelectric conversion efficiency not less than 10.3% is realized under the temperature difference of 485K, and the performance requirement of thermoelectric power generation is preliminarily met. The high-performance N-type Ag and Sb doped PbSe crystal thermoelectric material is prepared through a high-temperature vertical tube furnace slow cooling method, efficient room-temperature thermoelectric performance is developed in a traditional medium-high temperature N-type PbSe material, and the efficient thermoelectric conversion efficiency of the material also shows the application potential of the material as a thermoelectric power generation material.

This invention discloses a method for improving the thermoelectric performance of an AB ring through lateral coupling and optical field irradiation. The method includes: first, coupling two quantum dots QD1 and QD2 into a dual-quantum-dot structure via a tunnel junction; spatially confining the dual-quantum-dot structure; coupling the dual quantum dots into the AB ring via the tunnel junction; placing left and right electrodes on opposite sides of the AB ring structure; applying thermal radiation to create a temperature gradient between the left and right electrodes; injecting electrons into the AB ring electrodes, causing electron transport under the influence of the lateral coupling of the dual quantum dots and the temperature gradient; and applying an adjustable optical field to the dual-quantum-dot structure. By optimizing the tunneling coupling strength between the quantum dots and adjusting the optical field frequency, the thermoelectric transport characteristics of the system are synergistically controlled, thereby obtaining enhanced spin thermoelectric potential and spin ZT coefficient. This invention optimizes thermoelectric performance by increasing the tunneling coupling strength between quantum dots and improving the optical field frequency, providing a foundation for designing fast-response, high-efficiency, and low-energy-consumption thermoelectric devices.

The invention relates to the field of thermoelectric semiconductor materials, and provides a low-temperature P-type thermoelectric material and a preparation method and application thereof in order to solve the significant problem of a P-type thermoelectric material in a low-temperature environment, the chemical formula of the P-type thermoelectric material is Bi < x > Sb < 2-x > Te < 3 > M < y >, x is equal to 0.5-0.7, y is equal to 0.001-0.003, M is selected from one or more of Cu, Pb and Mn, and by means of component optimization and doping design, the P-type thermoelectric material can be prepared into the low-temperature P-type thermoelectric material. According to the P-type thermoelectric material, the thermoelectric performance of the material in the low-temperature region is improved by 18%, and the thermoelectric performance of the material in the low-temperature region is improved to 0.95 at-225 K from 0.75 of general market purchase, and the P-type thermoelectric material can be applied to the field of deep refrigeration.

This invention provides an Sb7Te / Te-doped Bi 0.5 Sb 1.5 This invention relates to the field of thermoelectric thin film technology and its preparation method. The invention utilizes radio frequency sputtering to achieve Sb7Te / Te-doped Bi on a polyimide substrate. 0.5 Sb 1.5 This invention relates to the preparation of Te3 thermoelectric thin films. By adjusting the substrate temperature and sputtering power during the magnetron sputtering process, thin films with high crystallinity and effective doping of the second phase (Te and Sb7Te) are obtained. Significant interface scattering effects and a substantial increase in conductivity are observed, resulting in bismuth telluride-based thin films with excellent thermoelectric properties. This invention uses flexible polyimide as a substrate to prepare Sb7Te / Te-doped Bi... 0.5 Sb 1.5 Te3 thermoelectric films have good flexibility, making them better suited for wearable devices.

The invention relates to the technical field of thermoelectric materials, in particular to a micro-crack structure thermoelectric thin film constructed based on PEDOT: PSS and polyaniline and a preparation method thereof.The preparation method comprises the following steps that a PEDOT: PSS raw material is selected, filtered and then dispersed in absolute ethyl alcohol, and uniform PEDOT: PSS dispersion liquid is obtained; the preparation method comprises the following steps: selecting a polyaniline raw material, and dispersing in absolute ethyl alcohol to obtain a stable and uniform polyaniline suspension; a vacuum suction filtration device is adopted, the specific vacuum degree is controlled, PEDOT: PSS dispersion liquid, polyaniline suspension liquid and PEDOT: PSS dispersion liquid are sequentially added, and a sandwich structure composite film precursor is formed through layered suction filtration. The method can be realized by adopting conventional vacuum filtration equipment, the microcrack structure is controllable, the thermoelectric performance can be optimized by adjusting the number of layers and the concentration, the prepared film has good flexibility and environmental stability, and the thermoelectric performance of the PEDOT: PSS-based composite material is improved.