31results about How to "Improve thermoelectric performance" patented technology

The invention relates to an application of a quaternary ammonium salt polymer in a thermoelectric material. The structural formula of the quaternary ammonium salt polymer is as shown in formula I in the specification. According to the preparation method, the quaternary ammonium salt cationic polymer can be used as a dispersing agent to be applied to dispersion of the carbon nanotubes, and the carbon nanotube dispersion liquid with relatively good stability can be obtained by adjusting the ratio of the dispersing agent to the carbon nanotubes, so that the problem that the carbon nanotubes are easy to agglomerate in the dispersion process is greatly solved; therefore, the carbon nanotube film with high thermoelectric performance is prepared, and the thermoelectric performance of the carbon nanotube is effectively improved. # imgabs0 #

The invention discloses a layered thermoelectric material with low lattice thermal conductivity and a preparation method thereof, and relates to the technical field of thermoelectric materials, the structural formula of the thermoelectric material is Ge1-xInxSb4Te7, and x is more than 0 and less than or equal to 0.1. According to the thermoelectric material, indium is doped in a GeSb4Te7 material through a hot pressed sintering preparation process, the lattice thermal conductivity of the GeSb4Te7 material can be effectively reduced, the Seebeck coefficient and the thermoelectric figure of merit of the GeSb4Te7 material can be improved, the problem that the lattice thermal conductivity of a Ge-Sb-Te-based layered material is generally high is solved, and material support is provided for application of the Ge-Sb-Te-based material in the fields of thermal barrier coatings, thermoelectric devices and the like.

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

The invention belongs to the field of thermoelectric materials, and discloses a rapid preparation method of a high-performance inorganic plastic thermoelectric material, which comprises the following steps: (1) weighing elementary substance material powder corresponding to each element according to the nominal chemical dosage ratio of each element in the chemical formula of the inorganic plastic thermoelectric material; (2) mixing to obtain mixed powder; (3) putting the mixed powder into a quartz tube, vacuumizing and sealing; and (4) placing the vacuum-sealed quartz tube in a graphite crucible, then placing the crucible in an induction heating coil, heating to 1000-1100 DEG C, and carrying out heat preservation for 10-20 minutes to carry out induction heating smelting so as to obtain the inorganic plastic thermoelectric material cast ingot. According to the invention, the process of the preparation method is improved, based on induction heating, the rapid preparation of the inorganic plastic thermoelectric material can be realized only by utilizing induction heating to keep the temperature at 1000-1100 DEG C for 10-20 minutes, and the prepared inorganic plastic thermoelectric material has the characteristic of high performance in the aspects of thermoelectric performance and plasticity.

The invention discloses a BiCuSeO carbon nanodot composite thermoelectric material and a preparation method thereof. The method comprises the following steps: step 1, synthesizing carbon nanodots; step 2, in-situ synthesis of the BiCuSeO / carbon nanodots is carried out; 3, spark plasma sintering of the BiCuSeO / carbon nanodot composite powder is carried out, and the BiCuSeO / carbon nanodot composite thermoelectric material is obtained.BiCuSeO serves as a matrix, N-CDs nanophase is introduced, the carbon dots have the electron transfer property, the surfaces of the carbon dots contain a large number of holes and electrons, the carbon dots can serve as electron donors and electron acceptors at the same time, and therefore the efficiency of the thermoelectric material is improved; and an electron transfer phenomenon occurs under a proper condition, so that the N-CDs are dispersed and distributed at the grain boundary of the BiCuSeO parent phase to greatly improve the electrical transport performance, and meanwhile, a relatively large Seebeck coefficient is maintained, so that the thermoelectric performance is improved.

The present invention discloses a SnTe-based thermoelectric material and a preparation method thereof, and relates to the field of thermoelectric materials, and in particular to a SnTe-based thermoelectric material with a multi-scale nanocomposite structure and a preparation method thereof. 1‑x Y x Te-5%Cu2Te, wherein x is 0, 0.01, 0.03, 0.05 or 0.07, which is prepared by using a high-purity metal element as a raw material, according to the stoichiometric ratio of the chemical formula, and after vacuum flame sealing, melt reaction quenching, and high temperature annealing, it is ground into powder, and vacuum discharge plasma sintering is performed to obtain a bulk SnTe-based thermoelectric material. Compared with the prior art, the present invention optimizes the hole carrier concentration and band structure of the SnTe material by co-doping SnTe with Cu and Y. At the same time, increasing the Y solid solubility allows the in-situ formation of a multi-scale nanostructure in SnTe, further reducing its thermal conductivity, thereby greatly improving the thermoelectric performance of the SnTe material.

The application discloses a SnTe-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectricity. The application adopts high-purity metal elements as raw materials, and the raw materials are mixed according to a stoichiometric ratio, and then a cast ingot is obtained through a melting reaction after vacuum packaging. Subsequently, the cast ingot is subjected to high-temperature annealing treatment. After the cast ingot subjected to the high-temperature annealing treatment is ground into powder, a dense block-shaped SnTe-based thermoelectric material is formed through discharge plasma sintering. The chemical formula of the SnTe-based thermoelectric material is Sn 2.9‑X W X Te 2.9 -(In2Te3) 0.03 -(Cu2Te) 0.18 The application significantly improves the thermoelectric figure of merit of the SnTe-based thermoelectric material and improves the thermoelectric performance of the SnTe-based thermoelectric material by doping tungsten elements in the SnTe matrix and compounding the two metal compounds of In2Te3 and Cu2Te.

The invention discloses a thermoelectric cement-based structure electrolyte, a cement-based thermal charging capacitor and a preparation method, the thermoelectric cement-based structure electrolyte comprises a cement matrix, and the cement matrix is formed by hardening cement paste uniformly doped with a water-soluble polymer and a two-dimensional MXene material; pores in the cement matrix are filled with an ion donor solution; the mass of the water-soluble polymer is 5-10% of that of the cement; the mass of the two-dimensional MXene material is 0.01%-0.1% of the mass of the cement. According to the invention, by doping the low-dosage water-soluble polymer and the two-dimensional MXene material into the cement paste, the pore distribution of the cement matrix is adjusted, the mechanical properties of the thermoelectric cement-based structure electrolyte are maintained and even improved, and the ternary composite system synergistically obtains a high Seebeck coefficient and ionic conductivity. According to the cement-based thermal charging capacitor, the thermoelectric cement-based structure electrolyte is used as an electrolyte layer, a double-electric-layer capacitor electricity storage electrode is compounded, and the good thermal power generation and electricity storage integration capacity is achieved under the temperature difference effect.

The invention relates to the technical field of thermoelectric materials, in particular to a high-flexibility silver telluride thermoelectric thin film with a pearl scallop structure and a preparation method and application of the high-flexibility silver telluride thermoelectric thin film. The non-stoichiometric silver telluride thermoelectric film with a pearl scallop structure is rapidly prepared through an intermittent co-sputtering process under the conditions of room temperature and fixed working air pressure; the pearl scallop structure obviously improves the mechanical property and the thermoelectric property of the silver telluride thermoelectric thin film; after the silver telluride thermoelectric thin film is bent and circulated for 5000 times, the surface has no crack, the resistance is only increased by 20%, and excellent flexibility is shown; and meanwhile, the power factor can reach 51.92 mu W m <-1 > K <-2 > under the room temperature condition, and the material has good thermoelectric performance, meets the requirements of flexible wearable thermoelectric devices, and has potential commercial application prospects.

The application provides a medium-high temperature p-type ZrNiSn-based half-Hasler thermoelectric material, a preparation method and application thereof. x Y x Zr 1‑2x NiSn, wherein x is a molar ratio, and the value range of x is 0.2-0.35. The medium-high temperature p-type ZrNiSn-based half-Hasler thermoelectric material provided by the application changes the majority carriers from electrons to holes, significantly reduces the lattice thermal conductivity, and obtains the p-type ZrNiSn-based thermoelectric material, thereby laying a foundation for developing high-power thermoelectric devices with matching n-type and p-type legs. The application has good application prospect and large-scale popularization potential in the fields of distributed low-grade waste heat recovery power generation and the like.

This invention discloses a rapid method for preparing SnSe crystals, shortening the crystal growth cycle from 260 hours to 52 hours. Compared to the traditional vertical gradient multi-temperature zone cooling method, this method overcomes the difficulty of heat dissipation in the central region during SnSe crystal growth by inserting a graphite rod at the center of the melt to achieve heat dissipation and balance the internal temperature zones. This allows for the successful growth of large SnSe single crystals in a shorter time while maintaining excellent thermoelectric properties. Specifically, the method involves first preparing a mixture according to stoichiometric proportions; then placing the mixture in a quartz tube and fixing a carbon rod at the center, followed by vacuum treatment; finally, placing the quartz tube in a dual-temperature zone vertical tube furnace to react and obtain the corresponding crystals. This invention shortens the crystal preparation time, improves production efficiency, and is applicable to mass production.

The present invention relates to the field of thermoelectric semiconductor materials. Aiming at the problem of additional pollution caused by the nano-sizing of materials, a method for preparing high-performance bismuth telluride-based thermoelectric materials is provided, comprising the following steps: 1) performing zone melting directional solidification on a bismuth telluride-based alloy ingot to obtain a crystal rod; 2) performing thermal deformation on the crystal rod obtained in step 1) to obtain a bulk material, wherein the deformation amount is greater than 1, and the thermal deformation is performed under uniaxial pressure, and the pressure direction is perpendicular to the texture direction of the zone melting crystal rod. The present invention thermally deforms the zone melting bulk material through a top-down method, thereby avoiding pollution caused by material refinement, directly introducing nano defects into the bulk material, refining the grains, reducing the thermal conductivity of the material, and improving the mechanical properties and thermoelectric properties of the material.

This invention provides an integrated heat dissipation and power generation device structure, fabrication method, and chip structure. A bottom electrode, a thermoelectric layer, and a top electrode are sequentially formed on a flexible substrate. Two pre-reserved thermoelectric unit output terminals on the thermoelectric layer form a series circuit through the bottom and top electrodes, thus forming a flexible thin-film array thermoelectric structure. The fabrication method, employing a miniaturized unit design, effectively reduces volume waste. The use of a flexible substrate solves the problem of rigid electrodes easily breaking under bending and uneven thermal expansion, enhancing the device's durability and stability. The thermoelectric layer material of this integrated heat dissipation and power generation device structure can absorb and dissipate heat, and can reuse thermal energy to achieve thermoelectric power generation using the material's own thermoelectric properties. It achieves dual functions of thermal management and energy conversion using a single material, optimizing thermoelectric conversion efficiency.

The application provides a MEMS capacitive pressure sensor and a preparation and use method thereof, and relates to the technical field of sensors.The structure of the MEMS capacitive pressure sensor provided by the application mainly comprises a force-sensitive nanofilm, a temperature-sensitive nanofilm, a substrate and a base plate, the substrate and the base plate are separated into two independent sealed cavities, and the surface of the base plate opposite to the force-sensitive nanofilm is etched with a ladder-shaped structure.The application optimizes the capacitive-pressure response characteristics (when the external pressure acts, the force-sensitive nanofilm is deformed, and the linear coupling is generated by the change of the effective overlapping area and the interval between the force-sensitive nanofilm and the ladder-shaped structure), and combines with the in-situ temperature compensation of graphene, so that the MEMS capacitive pressure sensor provided by the application can realize high linearity of pressure measurement in a wide temperature range, and the technical problems of traditional devices, such as serious temperature crosstalk and narrow linear interval, are solved, thereby providing a new solution for high-precision and high-reliability pressure measurement.

The invention discloses a thermoelectric film and a preparation method and application thereof. The method comprises the following steps: S1, mixing, heating and stirring a PBFDO solution and thermoplastic polyurethane, and performing centrifugal treatment to obtain a solution I; and S2, coating a mold with the solution I, and drying to obtain the thermoelectric thin film. According to the invention, the PBFDO solution is modified by thermoplastic polyurethane, so that the prepared thermoelectric film has good mechanical properties and thermoelectric properties.

The invention discloses an AgCuTe-based composite thermoelectric material and a preparation method thereof, the AgCuTe-based composite thermoelectric material is AgCuTe-x wt% SnTe, and x is equal to 1-7. The preparation method comprises the following steps: 1) weighing Ag powder, Cu powder, Te powder and polycrystalline SnTe according to a stoichiometric ratio; and 2) after mixing, filling the mixture into a graphite crucible, putting the graphite crucible into a vacuumized quartz tube, and sintering in a muffle furnace to obtain a cast ingot. And 3) ball-milling the sintered sample into powder, and carrying out spark plasma sintering to obtain the compact AgCuTe-based composite block material. Compared with a conventional material compounding method, the method has the advantages that SnTe is compounded in the AgCuTe in situ, so that a multi-scale defect structure is more favorably constructed, and the maximum phonon scattering efficiency is obtained. According to the optimization method provided by the invention, the heat conductivity of the liquid-like material AgCuTe is further reduced, the thermoelectric figure of merit zT of the material is improved, and a foundation is laid for further development and application of the material.

The invention relates to a Bi (1-x) Sbx single crystal material, a thermoelectric refrigeration device and a preparation method and application of the thermoelectric refrigeration device. The Bi < 1-x > Sb < x > single crystal material is prepared through a zone melting technology and is uniform in component and consistent in orientation; wherein in the Bi < 1-x > Sb < x > single crystal material, the value range of x is 0.1 to 0.15. Then, the Bi < 1-x > Sbx single-crystal thermoelectric leg with the Ni electrode layer and the BiSbTe thermoelectric leg which are obtained through the subsequent steps are welded to the aluminum nitride ceramic plate with the Cu coating layer through Bi < 0.58 > Sn < 0.42 > welding flux, and the Bi < 1-x > Sbx-based single-stage thermoelectric refrigeration device is further obtained; the refrigerating capacity of the refrigerating device can be further improved through solder in a cascade assembly mode, the lowest refrigerating temperature of the six-stage refrigerating device prepared through the method can reach 130 K, the six-stage refrigerating device is suitable for cooling application of the high-temperature superconductor, conversion of the YBa2Cu3O7 high-temperature superconductor from a normal state to a superconducting state is successfully achieved, and the application range of the YBa2Cu3O7 high-temperature superconductor is widened. The wide application prospect in the low-temperature field is shown.

This invention discloses a composite cubic phase (PbTe / SnTe / InSb) of Pb 0.975 Sb 0.025 S thermoelectric materials and their preparation methods. The method involves the one-step solvothermal synthesis of Pb. 0.975 Sb 0.025 S powder, then the composite y wt.% cubic phase (PbTe / SnTe / InSb) powder is uniformly dispersed on Pb using a low-temperature composite method. 0.975 Sb 0.025 In the S powder, the powder sample was then pressed into a well-dense composite cubic phase (PbTe / SnTe / InSb) by spark plasma sintering. 0.975 Sb 0.025 S-bulk materials. The synthesis process of this invention is simple and low-cost, producing Pb-containing cubic phase (PbTe / SnTe / InSb). 0.975 Sb 0.025 S-thermoelectric materials have certain excellent thermoelectric conversion efficiency.

The invention relates to the technical field of thermoelectric materials, and discloses an elastic compressible bismuth telluride composite thermoelectric material and a preparation method and application thereof, and the preparation method comprises the steps: uniformly mixing bismuth telluride powder, graphene, a pore forming agent and a polyurethane prepolymer, and compacting in a mold for curing; then soaking in water to remove sodium chloride; performing high-temperature treatment in a protective atmosphere to remove polyurethane to obtain a porous sample; and immersing the porous sample in an Ecoflex solution diluted by normal hexane, and curing in a drying oven to finally obtain the elastic compressible bismuth telluride composite thermoelectric material. The preparation process is simple, and the prepared elastic bismuth telluride composite thermoelectric material has good thermoelectric performance and compressibility, and has wide application prospects in the fields of flexible thermoelectricity, heat energy collection and wearing as a thermoelectric material.

The invention discloses a preparation method of a powdery nano-composite thermoelectric material, which comprises the following steps: (1) putting graphene oxide into deionized water according to a ratio, and carrying out ultrasonic treatment until liquid is in a uniform and transparent state; (2) sequentially adding sodium tartrate, TeO2, KOH and Bi (NO3) 3.5 H2O into the uniform and transparent liquid; (3) adding KBH4 into the solution obtained in the step (2), and then carrying out stirring reaction; (4) transferring the stirred solution obtained in the step (3) into a hydrothermal reaction kettle; (5) after the hydrothermal reaction kettle is naturally cooled to room temperature, taking out a product in the hydrothermal reaction kettle, and washing the product with deionized water until supernate is neutral; then washing the product with absolute ethyl alcohol at least twice; (6) a mixture of the product obtained in the step (5) and absolute ethyl alcohol is put into a centrifugal tube, then the centrifugal tube is put into a high-speed centrifugal machine to be centrifuged, and (7) the centrifuged product is subjected to vacuum drying, and the powdery nano-composite thermoelectric material is obtained after drying is completed. The invention provides a preparation method of a powdery nano composite thermoelectric material, which has the advantages of simple steps, convenience in operation and low cost, and can obtain a thermoelectric material with stable performance and high efficiency.

The invention discloses a rare-earth-based half-Heusler alloy material as well as a preparation method and application thereof. The preparation method comprises the following steps: smelting Pt and Sb metal raw materials to obtain a precursor PtSb; carrying out secondary smelting on Lu and Re metal raw materials and the precursor PtSb to obtain a smelted cast ingot, and carrying out crushing, ball milling and sintering to obtain the rare-earth-based half-Heusler alloy material Lu1-xRexPtSb; re = Sc or Y, x represents atomic percent, and x is more than or equal to 0 and less than or equal to 1.0. According to the method, scandium, yttrium, lutetium, platinum and antimony serve as raw materials, the cast ingot is obtained through the two-step suspension smelting reaction, the method can control the intensity of the thermal chemical reaction, a large amount of heat instantly released by one-time feeding is avoided, the high-quality rare earth-based half-Heusler alloy material is obtained, the optimal peak thermoelectric figure of merit can reach 1.0 or above, and the thermal conductivity of the alloy material is greatly improved. The highest level reported in the prior art is exceeded.

The present invention provides a c-axis oriented growth SnSb 2 Te 4 Thermoelectric film and its preparation method. The present invention adopts spark plasma sintering technology to prepare SnSb 2 Te 4 Polycrystalline target, growing SnSb on single crystal substrate using pulsed laser deposition technology 2 Te 4 Thin film, by adjusting the substrate temperature, argon pressure, laser energy density and other parameters, SnSb with good preferential orientation and high crystal quality is deposited on the single crystal substrate 2 Te 4 The SnSb film prepared by the method of the present invention 2 Te 4 The film has good thermoelectric properties and has broad application prospects in the fields of thermoelectric thin film devices and micro-area integrated electronic devices.

The invention provides a method for preparing a high-performance skutterudite compound through composite modification of carbon quantum dots. According to the method for preparing the high-performance skutterudite compound through composite modification of the carbon quantum dots, the carbon quantum dots are compounded into a CoSb3-based skutterudite thermoelectric material by adopting a rapid ultrasonic oscillation method of a carbon dot solution according to the characteristics that the carbon quantum dots are easily dissolved in water or an organic solvent and can be uniformly dispersed; according to the preparation method of the CoSb3-based skutterudite thermoelectric material, the carbon quantum dots can quickly enter a mesoporous system of CoSb3-based skutterudite, so that the carbon quantum dots are uniformly dispersed into the CoSb3-based skutterudite thermoelectric material to achieve a uniform compounding effect, and then the CoSb3-based skutterudite thermoelectric material is prepared by combining SPS sintering. The CoSb3-based skutterudite thermoelectric composite material has the advantages that the requirements of rapid and uniform compounding are met, the purposes of simplifying the compounding process and optimizing the process are achieved, and the CoSb3-based skutterudite thermoelectric composite material with better thermoelectric performance can be obtained; according to the method, the common traditional method for improving the thermoelectric performance of the existing CoSb3-based skutterudite thermoelectric material by doping, filling and compounding metal nanophases is broken through.

The invention provides a novel thermoelectric power generation material based on an N-type PbSe crystal and a preparation method thereof, the chemical formula of the material is PbxAg1 + ySb1-ySex + 2, x is more than or equal to 10 and less than or equal to 60, and y is more than or equal to 0.075 and less than or equal to 0.15; the ZT value of the material is not lower than 0.4 at the room temperature and not lower than 0.9 at the high temperature, and the average thermoelectric figure of merit ZTave in the range from the room temperature to 800 K is larger than or equal to 0.85. The N-type PbSe crystal material provided by the invention can be applied to thermoelectric power generation, the average ZT value in the whole temperature range is greater than or equal to 0.85, the thermoelectric conversion efficiency not less than 10.3% is realized under the temperature difference of 485K, and the performance requirement of thermoelectric power generation is preliminarily met. The high-performance N-type Ag and Sb doped PbSe crystal thermoelectric material is prepared through a high-temperature vertical tube furnace slow cooling method, efficient room-temperature thermoelectric performance is developed in a traditional medium-high temperature N-type PbSe material, and the efficient thermoelectric conversion efficiency of the material also shows the application potential of the material as a thermoelectric power generation material.

This invention discloses a method for improving the thermoelectric performance of an AB ring through lateral coupling and optical field irradiation. The method includes: first, coupling two quantum dots QD1 and QD2 into a dual-quantum-dot structure via a tunnel junction; spatially confining the dual-quantum-dot structure; coupling the dual quantum dots into the AB ring via the tunnel junction; placing left and right electrodes on opposite sides of the AB ring structure; applying thermal radiation to create a temperature gradient between the left and right electrodes; injecting electrons into the AB ring electrodes, causing electron transport under the influence of the lateral coupling of the dual quantum dots and the temperature gradient; and applying an adjustable optical field to the dual-quantum-dot structure. By optimizing the tunneling coupling strength between the quantum dots and adjusting the optical field frequency, the thermoelectric transport characteristics of the system are synergistically controlled, thereby obtaining enhanced spin thermoelectric potential and spin ZT coefficient. This invention optimizes thermoelectric performance by increasing the tunneling coupling strength between quantum dots and improving the optical field frequency, providing a foundation for designing fast-response, high-efficiency, and low-energy-consumption thermoelectric devices.

The invention discloses a strong-texture bismuth-antimony flexible thermoelectric thin film and a preparation method and application thereof. The chemical structural formula of the strong-texture bismuth-antimony flexible thermoelectric thin film is Bi < 1-x-y > Sb < x > Zn < y >, x is equal to 0.005-0.05, and y is equal to 0-0.02; the thickness of the thermoelectric thin film is 10-100 [mu] m, the orientation factor of the thin film along the (00l) crystal face is 0.55-0.78, and the power factor under 300K is 26-43 [mu] W.cm <-1 >. K <-2 >. According to the invention, the flexible thermoelectric film with a strong (00l) oriented texture is prepared; the process method is simple and efficient, the cost is low, commercialized mass production is easy to realize, and the prepared bismuth-antimony film not only shows excellent thermoelectric performance and good flexibility, but also shows excellent reliability and repeatability, and shows a wide application prospect in the field of planar thermoelectric devices for power generation and refrigeration.

The invention belongs to the technical field of thermoelectric materials, and particularly relates to a fiber feather-shaped nanocrystalline bismuth telluride thermoelectric thin film with high toughness and a preparation method thereof. The method comprises the following steps: (1) taking a silicon oxide wafer and polyimide as a substrate, fixing the substrate to a basal disc, and putting the basal disc into a sputtering cavity; (2) fixing the tellurium bismuth alloy target on a direct-current power supply, fixing the tellurium elementary substance target on a radio-frequency power supply, adjusting the distance among the tellurium bismuth alloy target, the tellurium elementary substance target and the substrate, closing a cabin door, and cleaning the substrate by utilizing an ionization method; and (3) after the cleaning is finished, growing the fiber feather-shaped nanocrystalline bismuth telluride thermoelectric thin film with high toughness by adopting an intermittent sputtering method. According to the method, the high-toughness fiber feather-shaped nanocrystalline bismuth telluride thermoelectric thin film is grown in one step by adjusting the total sputtering time and the sputtering bias voltage at the room temperature and under the fixed working air pressure for the first time, the requirements of flexible wearable thermoelectric devices can be met, and the method has potential commercial prospects.

The invention relates to the field of thermoelectric semiconductor materials, and provides a low-temperature P-type thermoelectric material and a preparation method and application thereof in order to solve the significant problem of a P-type thermoelectric material in a low-temperature environment, the chemical formula of the P-type thermoelectric material is Bi < x > Sb < 2-x > Te < 3 > M < y >, x is equal to 0.5-0.7, y is equal to 0.001-0.003, M is selected from one or more of Cu, Pb and Mn, and by means of component optimization and doping design, the P-type thermoelectric material can be prepared into the low-temperature P-type thermoelectric material. According to the P-type thermoelectric material, the thermoelectric performance of the material in the low-temperature region is improved by 18%, and the thermoelectric performance of the material in the low-temperature region is improved to 0.95 at-225 K from 0.75 of general market purchase, and the P-type thermoelectric material can be applied to the field of deep refrigeration.

This invention provides an Sb7Te / Te-doped Bi 0.5 Sb 1.5 This invention relates to the field of thermoelectric thin film technology and its preparation method. The invention utilizes radio frequency sputtering to achieve Sb7Te / Te-doped Bi on a polyimide substrate. 0.5 Sb 1.5 This invention relates to the preparation of Te3 thermoelectric thin films. By adjusting the substrate temperature and sputtering power during the magnetron sputtering process, thin films with high crystallinity and effective doping of the second phase (Te and Sb7Te) are obtained. Significant interface scattering effects and a substantial increase in conductivity are observed, resulting in bismuth telluride-based thin films with excellent thermoelectric properties. This invention uses flexible polyimide as a substrate to prepare Sb7Te / Te-doped Bi... 0.5 Sb 1.5 Te3 thermoelectric films have good flexibility, making them better suited for wearable devices.

The invention relates to the technical field of thermoelectric materials, in particular to a micro-crack structure thermoelectric thin film constructed based on PEDOT: PSS and polyaniline and a preparation method thereof.The preparation method comprises the following steps that a PEDOT: PSS raw material is selected, filtered and then dispersed in absolute ethyl alcohol, and uniform PEDOT: PSS dispersion liquid is obtained; the preparation method comprises the following steps: selecting a polyaniline raw material, and dispersing in absolute ethyl alcohol to obtain a stable and uniform polyaniline suspension; a vacuum suction filtration device is adopted, the specific vacuum degree is controlled, PEDOT: PSS dispersion liquid, polyaniline suspension liquid and PEDOT: PSS dispersion liquid are sequentially added, and a sandwich structure composite film precursor is formed through layered suction filtration. The method can be realized by adopting conventional vacuum filtration equipment, the microcrack structure is controllable, the thermoelectric performance can be optimized by adjusting the number of layers and the concentration, the prepared film has good flexibility and environmental stability, and the thermoelectric performance of the PEDOT: PSS-based composite material is improved.