5results about How to "High Seebeck coefficient" patented technology

The present application relates to a kind of n-p type hydrogel thermal battery module and its preparation and application, including n-type hydrogel thermal battery and p-type hydrogel thermal battery;Wherein n-type hydrogel thermal battery in hydrogel is network skeleton, by Fe 3+ / Fe 2+ Redox ion pair constructs n-type hydrogel thermal battery, and the hydrogel in p-type hydrogel thermal battery is network skeleton, Fe 3+ / Fe 2+ And carboxylate complex constructs p-type hydrogel thermal battery.The n-p hydrogel thermal battery module provided in the application has high thermoelectric performance, and can be applied to information encryption field.

The invention relates to an n-p type hydrogel thermogalvanic battery module as well as preparation and application thereof. The n-p type hydrogel thermogalvanic battery module comprises an n type hydrogel thermogalvanic battery and a p type hydrogel thermogalvanic battery, wherein hydrogel in the n-type hydrogel thermogalvanic battery is a network skeleton, the n-type hydrogel thermogalvanic battery is constructed by Fe < 3 + > / Fe < 2 + > redox ion pairs, hydrogel in the p-type hydrogel thermogalvanic battery is a network skeleton, and Fe < 3 + > / Fe < 2 + > and carboxylate are complexed to construct the p-type hydrogel thermogalvanic battery. The n-p hydrogel pyrogalvanic battery module provided by the invention has high thermoelectric performance and can be applied to the field of information encryption.

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

The application discloses a germanium telluride-based polycrystalline thermoelectric material and a preparation method thereof. x Pb 0.04 Te 0.96 (IBiTe) 0.04 The raw materials are weighed according to stoichiometric ratios of x=0.92, 0.94 and 0.96, mixed uniformly and then loaded into a quartz tube; the quartz tube loaded with the raw materials is moved into a heating furnace, the raw materials are completely melted by increasing temperature, and then water quenching treatment is carried out to obtain a polycrystalline ingot; after cooling, the polycrystalline ingot is placed into the heating furnace for annealing, the annealing temperature is set to be 600-650 DEG C, and alloy powder with uniform components is obtained; after the alloy powder is ball milled, the alloy powder is transferred into a sintering mold under inert gas protection to carry out densification sintering, and a polycrystalline block is obtained. The germanium telluride polycrystalline block thermoelectric material prepared by the application has excellent densification, high Seebeck coefficient, high electrical conductivity and low lattice thermal conductivity, and finally a high-performance material with high thermoelectric figure of merit (ZT value) is obtained.

The application discloses a method for preparing N-type bismuth telluride based on plastic deformation of melting combination, and belongs to the technical field of thermoelectric material preparation. The method comprises the following steps: weighing raw materials of N-type bismuth telluride powder, vacuum packaging, heating and melting, and cooling to obtain a ingot with uniform composition; grinding the obtained ingot into fine powder by using an agate mortar; then performing first spark plasma sintering on the powder to obtain a densified block; finally, performing second spark plasma sintering on the block, and applying pressure to induce plastic deformation in the sintering process; and through the adjustment of deformation temperature, pressure and strain rate, the grain preferred orientation and micro defect are cooperatively optimized. The application adopts a step-by-step spark plasma sintering plastic deformation process, significantly improves the thermoelectric performance of bismuth telluride material, especially the power factor and ZT value, and has the advantages of simple process, short cycle, good repeatability, suitable for industrial production and the like.