12results about How to "High Seebeck coefficient" patented technology

The invention relates to a non-equimolar-ratio high-entropy thermoelectric ceramic and a preparation method thereof. The chemical formula of the non-equimolar-ratio high-entropy thermoelectric ceramic is (Ca1 / 3Sr1 / 3Ba1 / 3) 1-xLaxTiO3 (x = 0.1-0.4). Through presintering, spark plasma sintering and reduction annealing processes, a single-phase perovskite structure composed of phases of the A-site high-entropy perovskite thermoelectric ceramic is obtained, equiaxed crystal grains are arranged in the ceramic, and the morphology of the equiaxed crystal grains is matched with that of cubic perovskite structure crystal grains. Elements Ca, Sr, Ba, La, Ti and O in the ceramic are uniformly distributed in the ceramic, and no agglomeration phenomenon exists. The A-bit non-equimolar-ratio high-entropy perovskite thermoelectric ceramic (Ca1 / 3Sr1 / 3Ba1 / 3) 1-xLaxTiO3 obtained by the invention has low thermal conductivity, high conductivity and Seebeck coefficient, further shows a high thermoelectric ZT figure of merit, is simple to operate and short in time period, and provides an effective path for preparing high-temperature thermoelectric materials.

The invention discloses a layered thermoelectric material with low lattice thermal conductivity and a preparation method thereof, and relates to the technical field of thermoelectric materials, the structural formula of the thermoelectric material is Ge1-xInxSb4Te7, and x is more than 0 and less than or equal to 0.1. According to the thermoelectric material, indium is doped in a GeSb4Te7 material through a hot pressed sintering preparation process, the lattice thermal conductivity of the GeSb4Te7 material can be effectively reduced, the Seebeck coefficient and the thermoelectric figure of merit of the GeSb4Te7 material can be improved, the problem that the lattice thermal conductivity of a Ge-Sb-Te-based layered material is generally high is solved, and material support is provided for application of the Ge-Sb-Te-based material in the fields of thermal barrier coatings, thermoelectric devices and the like.

The present application relates to a kind of n-p type hydrogel thermal battery module and its preparation and application, including n-type hydrogel thermal battery and p-type hydrogel thermal battery;Wherein n-type hydrogel thermal battery in hydrogel is network skeleton, by Fe 3+ / Fe 2+ Redox ion pair constructs n-type hydrogel thermal battery, and the hydrogel in p-type hydrogel thermal battery is network skeleton, Fe 3+ / Fe 2+ And carboxylate complex constructs p-type hydrogel thermal battery.The n-p hydrogel thermal battery module provided in the application has high thermoelectric performance, and can be applied to information encryption field.

The invention relates to an n-p type hydrogel thermogalvanic battery module as well as preparation and application thereof. The n-p type hydrogel thermogalvanic battery module comprises an n type hydrogel thermogalvanic battery and a p type hydrogel thermogalvanic battery, wherein hydrogel in the n-type hydrogel thermogalvanic battery is a network skeleton, the n-type hydrogel thermogalvanic battery is constructed by Fe < 3 + > / Fe < 2 + > redox ion pairs, hydrogel in the p-type hydrogel thermogalvanic battery is a network skeleton, and Fe < 3 + > / Fe < 2 + > and carboxylate are complexed to construct the p-type hydrogel thermogalvanic battery. The n-p hydrogel pyrogalvanic battery module provided by the invention has high thermoelectric performance and can be applied to the field of information encryption.

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

The invention relates to the technical field of sensors, in particular to a Te nanotube-based thermoelectric-piezoelectric single-channel two-parameter sensor and a manufacturing method thereof. The sensor comprises a multi-layer composite film structure which sequentially comprises a polyimide flexible substrate, a lower electrode indium tin oxide conductive layer, a SiO2 dielectric layer, a Te nanotube film sensing layer, a polydimethylsiloxane packaging protection layer and an upper electrode gold layer from bottom to top, and gold wires are led out from the upper electrode gold layer and the lower electrode indium tin oxide conductive layer through elargol to serve as unique output ends; the polyimide flexible substrate serves as a flexible support, and the upper electrode gold layer, the lower electrode indium tin oxide conductive layer and an external circuit form a loop to output signals. The thermoelectric-piezoelectric single-channel two-parameter sensor can simultaneously output thermoelectric-piezoelectric signals in a single channel, has excellent flexibility, is simple in preparation method and low in cost, can realize large-scale preparation and miniaturized application, and has great potential in the fields of medical health, human-computer interaction and the like.

The invention discloses a semiconductor structure and a forming method thereof, and the structure comprises a substrate which comprises a channel region, a source region located at one side of the channel region, and a drain region located at the other side of the channel region; the doping layer is located in the substrate of the channel region; the channel layer is positioned on the top surface of the substrate in the channel region, has high electronic thermal conductivity and is in contact with the doping layer; the source electrode is located at the top of the substrate of the source region, and the source electrode is in contact with one end of the channel layer; the drain electrode is located at the top of the substrate of the drain region, and the drain electrode is in contact with the other end of the channel layer. And the response rate and the response time of the semiconductor structure are improved.

The invention discloses a Cu-Se-based high-entropy thermoelectric material capable of inhibiting Cu ion migration and a preparation method of the Cu-Se-based high-entropy thermoelectric material, and belongs to the technical field of high-entropy thermoelectric materials. The general formula of the Cu-Se-based high-entropy thermoelectric material is Cux (Pb < 1-y > M < y >) (InzSn < 1-z >) SemTn, x is equal to 1.2-1.8, y is equal to 0.2-0.8, z is equal to 0.1-0.3, m is equal to 0.4-0.9, n is equal to 0.1-0.15, and x, y, z, m and n are molar molecule numbers. The Cu-Se-based high-entropy thermoelectric material can form a more stable lattice structure by accurately controlling the molar ratio and particle size distribution of the elements, so that migration of Cu ions under high current or temperature gradient is inhibited, and the structural integrity and long-term stability of the material can be maintained.

The application discloses a germanium telluride-based polycrystalline thermoelectric material and a preparation method thereof. x Pb 0.04 Te 0.96 (IBiTe) 0.04 The raw materials are weighed according to stoichiometric ratios of x=0.92, 0.94 and 0.96, mixed uniformly and then loaded into a quartz tube; the quartz tube loaded with the raw materials is moved into a heating furnace, the raw materials are completely melted by increasing temperature, and then water quenching treatment is carried out to obtain a polycrystalline ingot; after cooling, the polycrystalline ingot is placed into the heating furnace for annealing, the annealing temperature is set to be 600-650 DEG C, and alloy powder with uniform components is obtained; after the alloy powder is ball milled, the alloy powder is transferred into a sintering mold under inert gas protection to carry out densification sintering, and a polycrystalline block is obtained. The germanium telluride polycrystalline block thermoelectric material prepared by the application has excellent densification, high Seebeck coefficient, high electrical conductivity and low lattice thermal conductivity, and finally a high-performance material with high thermoelectric figure of merit (ZT value) is obtained.

The invention relates to the technical field of thermoelectric materials, and discloses a donor-acceptor type polymer-based flexible thermoelectric film and a preparation method thereof, and the flexible thermoelectric film is formed by mixing and doping single-walled carbon nanotubes, has a structure containing benzothiadiazole (BTH), and has very excellent hot spot performance. The specific preparation method comprises the following steps: respectively dissolving the single-walled carbon nanotube and PffBT4T-2OD in chlorobenzene and trichloromethane through ultrasonic oscillation, mixing, stirring and oscillating to disperse the mixture in the solution, preserving the mixture on filter paper through vacuum filtration, and finally drying the mixture on the filter paper in vacuum to obtain the composite film. The method provided by the invention is simple and convenient, easy to implement and suitable for industrial production, and the prepared film has the characteristics of high conductivity and high Seebeck coefficient, has the characteristics of good toughness, difficulty in damage and small environmental pollution compared with an inorganic thermoelectric material, and is an excellent organic thermoelectric composite film.

The invention provides bismuth telluride-based powder and a preparation method thereof, and belongs to the technical field of thermoelectric materials. According to the preparation method of the bismuth telluride-based powder, after the raw materials and the solvent are mixed, the second solution with the pH being 10-13 is prepared through the pH regulator, then the chelating agent is added to form the third solution, the third solution is subjected to high-energy ball milling, and the bismuth telluride-based powder with the high Cohn coefficient can be prepared; when the bismuth telluride-based powder is used for preparing the bismuth telluride-based thermoelectric material, the compression strength, the conductivity and the Seebeck coefficient of the bismuth telluride-based thermoelectric material can be improved.

The application discloses a method for preparing N-type bismuth telluride based on plastic deformation of melting combination, and belongs to the technical field of thermoelectric material preparation. The method comprises the following steps: weighing raw materials of N-type bismuth telluride powder, vacuum packaging, heating and melting, and cooling to obtain a ingot with uniform composition; grinding the obtained ingot into fine powder by using an agate mortar; then performing first spark plasma sintering on the powder to obtain a densified block; finally, performing second spark plasma sintering on the block, and applying pressure to induce plastic deformation in the sintering process; and through the adjustment of deformation temperature, pressure and strain rate, the grain preferred orientation and micro defect are cooperatively optimized. The application adopts a step-by-step spark plasma sintering plastic deformation process, significantly improves the thermoelectric performance of bismuth telluride material, especially the power factor and ZT value, and has the advantages of simple process, short cycle, good repeatability, suitable for industrial production and the like.