26 results about "Bismuth selenide" patented technology

The invention relates to a vacancy-assisted tin heterovalent doped bismuth selenide material as well as a preparation method and application thereof, Se vacancy defects existing in VSe-Bi2Se3 are utilized to assist in stable doping of Sn < 4 + > into Bi sites, so that the Sn-VSe-Bi2Se3 material is obtained. As the positive electrode material of the zinc ion battery, the Sn-VSe-Bi2Se3 shows high specific capacity, excellent rate capability and long-acting stable cycle performance, and has the advantages of simple and convenient process, mild conditions and suitability for large-scale production.

The invention relates to the technical field of sodium ion battery electrode materials, in particular to a bismuth-nickel bimetallic selenide-containing composite material and a preparation method and application thereof. The preparation method comprises the following steps: carrying out hydrothermal reaction on a rod-like copper butoxide-nickel precursor which is unstable in structure under high-temperature pyrolysis and is used as a nickel source and a bismuth source, and then selenizing with selenium in an inert atmosphere in a vapor deposition manner; and cooling to room temperature to obtain the bismuth-nickel bimetallic selenide composite material of the two-dimensional nano-plate loaded nano-particles. According to the method, low thermal stability of nickel dimethylglyoxime is fully utilized, and conversion of rod-porous-small nano-particles is achieved in the pyrolysis-selenylation process. The morphology transformation is beneficial to finally and uniformly coating the surface of the bismuth selenide nano-plate. The raw materials used in the method are cheap and rich in source, the preparation period is short, and the stability is good. Meanwhile, the complementarity of the working potentials of the two components in the sodium storage process can also realize efficient sodium storage in the whole voltage range.

This application discloses a magnetic tunnel junction memory device based on a bismuth selenide and nickel iodide heterojunction substrate. The memory includes, from top to bottom, a top electrode, a SOT-MTJ, and a substrate. The SOT-MTJ includes, from top to bottom, a reference layer, a tunneling layer, a heavy metal layer, and a free layer. The substrate is a Bi2Se3 and NiI2 heterojunction structure. Bi2Se3 facilitates the conversion of current into spin-orbit torque, enabling current-induced field-free magnetization reversal. NiI2 has vertical magnetic anisotropy, which can reduce the critical reversal current. An artificial antiferromagnetic structure (CoFeB / MgO / Ta / W / CoFeB) with vertical magnetic anisotropy is adopted, with Ta / W composite heavy metal as the coupling layer. The two antiferromagnetically coupled CoFeB layers switch between parallel and antiparallel states under the action of SOT. Both Ta and W have large spin Hall angles, which are very beneficial for generating spin-orbit torque to reverse the magnetic moment.

The application discloses a single crystal growth method of Bi-O-Se-Cl four-component semiconductor material. The chemical formula of the Bi-O-Se-Cl four-component semiconductor material is Bi 10 O 12 SeCl4, each unit cell of the crystal contains 98 atoms, has a layered structure with two layers of [Bi 12 O 12 Se2Cl], two layers of [Bi6O 10 ] and four layers of [3Cl] alternately stacked along the c-axis. The growth method is as follows: bismuth powder and selenium powder are ground and mixed, and then a solid phase reaction is caused to obtain bismuth selenide; bismuth oxide, bismuth chloride and bismuth selenide are ground and mixed to obtain mixed powder 2, which is placed at the bottom of a quartz tube, vacuumized and sealed; the sealed quartz tube is horizontally placed in a two-zone furnace, and gas phase transportation is started; the hot end and the cold end of the two-zone furnace are respectively subjected to gradient heating and heat preservation, and after the end, the two-zone furnace is cooled, and thus Bi 10 O 12 SeCl4 crystals are obtained. The Bi 10 O 12 SeCl4 crystal has a complex layered structure and is a candidate material with intrinsic low thermal conductivity, and the growth method is simple and reliable.

The application relates to a preparation method of a bismuth selenide film with adjustable defect concentration and application of the bismuth selenide film to a photoelectric synaptic device, and belongs to the technical field of two-dimensional photoelectric materials and photoelectric synaptic device preparation. The specific scheme is as follows: a Bi2Se3 film is prepared by adopting chemical vapor deposition, secondary treatment is conducted on the prepared Bi2Se3 film by in-situ heat treatment for avoiding air contact and keeping the original atmosphere to obtain a bismuth selenide film with adjustable defect concentration. The photoelectric synaptic device of the prepared bismuth selenide film is of an MSM structure, is simple in structure and has integration potential; the photoelectric response of the Bi2Se3 film photoelectric synaptic device has obvious basic synaptic behaviors of long-term potentiation, short-term potentiation and pulse enhancement, and can be applied to the field of artificial intelligence.

The present application relates to photothermal-thermoelectric synergistic material, photothermal-thermoelectric synergistic composite material, preparation method and application thereof, the photothermal-thermoelectric synergistic material includes bismuth selenide-gold composite material, bismuth selenide-gold composite material is hexagonal, gold material is located in the central hexagon.The advantage lies in, gold nanoparticles located in the center of hexagon are used as "heat source core", under the excitation of near infrared light, stable radial temperature gradient is formed with the base bismuth selenide, and then endogenous micro-current is generated based on the Seebeck effect of bismuth selenide, this wireless, non-invasive "photothermal-stable temperature difference-thermoelectric" cascade signal can effectively simulate the bioelectric environment of bone tissue, and the osteogenic differentiation of bone marrow mesenchymal stem cells is significantly promoted;The photothermal-thermoelectric synergistic material of the present application can effectively remove active oxygen, and has good antioxidant property.

The invention provides a bismuth selenate and bismuth oxyselenite two-dimensional fence single-crystal heterostructure as well as a preparation method and application thereof, and relates to the technical field of semiconductor materials. The preparation method comprises the following steps: S1, carrying out high-temperature annealing treatment on a substrate; s2, taking the pretreated substrate as a growth substrate, taking a bismuth selenide block and high-purity oxygen as raw materials, and performing chemical vapor deposition to obtain a two-dimensional single-crystal heterostructure; and S3, carrying out oxidation conversion to obtain the bismuth selenate and bismuth oxyselenite two-dimensional fence single crystal heterostructure. The high-orientation and high-crystallization-quality thin film channel is obtained through annealing pretreatment and symmetry matching of the substrate, the buffer layer grown in situ can effectively optimize an interface, integration of the channel and the gate dielectric is achieved through one step of oxidation, perfect integration of gate oxides on the two sides and the semiconductor channel is achieved, and the performance of the semiconductor device is improved. And the preparation of the two-dimensional GAA single crystal heterostructure with a wafer-level gate dielectric / semiconductor / gate dielectric three-layer structure is realized.

The application provides a two-dimensional bismuth selenide oxide film transfer method and a hetero-integration method thereof, and relates to the technical field of semiconductor materials.The two-dimensional bismuth selenide oxide film transfer method provided by the application realizes lossless and clean transfer of the bismuth selenide oxide film through a composite transfer medium of a TRT layer / a support layer / a stress layer / an oxide layer.In the transfer process, the oxide layer serves as a contact layer to ensure that the bismuth selenide oxide is not damaged in the transfer process, and excellent electrical properties of the bismuth selenide oxide are ensured.The stress layer provides tensile stress, and can realize dry lossless peeling of wafer-level bismuth selenide oxide.The support layer can avoid cracking of the film in the peeling process, realize lossless and clean transfer of the bismuth selenide oxide film, and the bismuth selenide oxide film after transfer is complete and continuous, the surface is flat, the surface roughness is less than 0.65 nm, and the film uniformity is good.

The invention provides a preparation method of a bismuth selenide heterojunction photocatalyst with a pine branch-shaped hierarchical structure. The preparation method comprises the following steps: S1, adding Bi (NO3) 3 into dilute nitric acid, and dissolving to obtain a dissolved solution; s2, diluting the dissolved solution to serve as an electrolyte, and adopting graphite paper as an electrode; s3, applying direct-current voltage between the graphite paper, so that Bi < 3 + > ions in the electrolyte are reduced into metal Bi with a pine branch-shaped hierarchical structure on the graphite paper connected with the negative electrode, and a Bi / graphite paper composite precursor is obtained; s4, rinsing and drying the Bi / graphite paper composite precursor, and firing the Bi / graphite paper composite precursor with flame to obtain a paper flexible precursor; and S5, putting the flexible paper precursor and selenium powder into a crucible, then putting the crucible into a tubular furnace, and carrying out heat treatment in a nitrogen atmosphere. The photocatalyst obtained by the method has excellent photocatalysis and reducibility, and solves the problem of weak reducibility when single Bi2Se3 is used as a water treatment photocatalyst.

The invention discloses a method for preparing Bi3O2.5 Se2 through oxidation conversion of bismuth selenide and application of an obtained Bi3O2.5 Se2 semiconductor material, a chemical vapor deposition technology is adopted, reaction is carried out in a specific oxygen-containing mixed atmosphere, and Bi2Se3 powder, nanosheets and films can be directionally oxidized into Bi3O2.5 Se2 powder, nanosheets and films. In the chemical vapor deposition step, carrier gas is carried out in the atmosphere of argon and oxygen, the flow of the carrier gas is 100-500 s.c.c.m., and the oxygen accounts for 5-10% of the carrier gas; the system pressure intensity is 50 to 400 Torr; the deposition temperature is 300 to 600 DEG C; the deposition time is 1-12 hours. The method is simple in process and low in cost, and the generated Bi3O2.5Se2 film has higher crystal quality and ultralow interface roughness and is suitable for the microelectronic fields of high-performance field effect transistors, photoelectric devices and the like.

The present invention provides: a bismuth compound represented by chemical formula 1, which can be effectively usable as a thin film precursor; and a composition for forming a thin film, comprising same. In addition, the present invention provides a method for synthesizing bismuth selenide (Bi2Se3) with excellent uniformity and high purity by using the composition for forming a thin film. [Chemical formula 1] (In chemical formula 1, R1) to R12 are each independently linear or branched C1-C10 alkyl.)

The invention relates to a semi-vertical heterojunction photoelectric detector and a manufacturing method thereof, belongs to the technical field of photoelectric detectors, and solves the problems that high dark current is caused by high mobility of bismuth selenide oxide and responsivity is limited by high recombination rate. The device comprises a semiconductor substrate; the first electrode and the second electrode are respectively located at two opposite sides of the semiconductor substrate above the semiconductor substrate; a channel region between the first electrode and the second electrode; the bismuth oxyselenide layer is located above the first electrode and on the inner side wall of the first electrode; the tungsten disulfide layer is located above the bismuth selenide layer, in the remaining channel region and above the second electrode so as to form a bismuth selenide-tungsten disulfide heterojunction with the bismuth selenide layer, and the tungsten disulfide layer is not in contact with the first electrode. A heterojunction is constructed through WS2 and two-dimensional Bi2O2Se, a strong built-in electric field on a heterojunction interface is used for inhibiting dark current, the heterojunction reduces the probability of carrier recombination, and great help is provided for improving photoelectric properties such as light responsivity of a heterojunction device.

The application belongs to the technical field of two-dimensional semiconductor nanomaterials, and discloses a method for preparing high-purity bismuth selenide by regulating and controlling precursor concentration. The application realizes full reaction and precise matching of bismuth source and selenium source by precisely controlling the concentration of bismuth source in a bismuth precursor solution, the concentration of selenium source in a selenium precursor dispersion, and optimizing the molar ratio of bismuth and selenium, effectively avoids the generation of unreacted precursor residues and impurities, and the prepared bismuth selenide nanomaterial has extremely high purity, does not need an additional purification process, reduces the preparation cost, ensures excellent physicochemical properties of the material, and can meet the stringent requirements of photothermal, biomedical and other fields for high-purity bismuth selenide materials.

The invention provides a large-size wafer-level bismuth selenide single-crystal thin film as well as a preparation method and application thereof, and relates to the technical field of semiconductor materials. The large-size wafer-level bismuth selenide single-crystal thin film is a continuous and uniform bismuth selenide single-crystal thin film, and the wafer diameter of the large-size wafer-level bismuth selenide single-crystal thin film is larger than or equal to 4 inches. The preparation method of the large-size wafer-level bismuth selenide single-crystal thin film is simple in process, high in controllability, low in cost and large in thin film size and can be applied to batch production of the large-size wafer-level bismuth selenide single-crystal thin film, the size of the produced wafer-level bismuth selenide single-crystal thin film can reach 4 inches or above, and the wafer-level bismuth selenide single-crystal thin film is flat in surface, consistent in domain orientation and high in yield. The bismuth selenide single crystal film has good crystallinity and excellent photoelectric properties, and lays a foundation for application of the bismuth selenide single crystal film in the photoelectric field.

The invention discloses a manganese-doped bismuth selenide composite material, a preparation method thereof and application of the manganese-doped bismuth selenide composite material in an aqueous zinc ion battery, and belongs to the technical field of electrode materials. The manganese-doped bismuth selenide composite material is synthesized and prepared through a simple hydrothermal reaction, and manganese doping not only effectively expands interlayer spacing and provides more active sites, but also promotes ion diffusion and charge transfer, so that internal resistance is reduced, the conductivity of the manganese-doped bismuth selenide positive electrode material is improved, and the service life of the manganese-doped bismuth selenide positive electrode material is prolonged. And the manganese atoms are doped and can be used as a support column to maintain the structural stability of the material, so that the water-based zinc ion battery has higher specific capacity. The preparation method has the advantages of simple synthesis process, large-scale synthesis and low consumption cost, and is expected to become a promising energy storage material in aqueous zinc ion batteries.

This invention relates to photothermal-thermoelectric synergistic materials, photothermal-thermoelectric synergistic composite materials, preparation methods, and applications. The photothermal-thermoelectric synergistic materials include bismuth selenide-gold composite materials, wherein the bismuth selenide-gold composite material is hexagonal, with the gold material located at the center of the hexagon. Its advantages lie in utilizing the gold nanoparticles located at the center of the hexagon as a "heat source core," which, under near-infrared light excitation, forms a stable radial temperature gradient with the substrate bismuth selenide, thereby generating an endogenous microcurrent based on the Seebeck effect of bismuth selenide. This wireless, non-invasive "photothermal-stable temperature difference-thermoelectric" cascade signal can effectively simulate the bioelectrical environment of bone tissue, significantly promoting osteogenic differentiation of bone marrow mesenchymal stem cells. The photothermal-thermoelectric synergistic material of this invention can effectively remove reactive oxygen species and has good antioxidant properties.

The application relates to the technical field of sodium ion battery electrode materials, in particular to a composite material containing bismuth-nickel bimetallic selenide and a preparation method and application thereof. The preparation method is as follows: taking a rod-shaped copper nickel diketone precursor with unstable structure as a nickel source under high-temperature pyrolysis, carrying out a hydrothermal reaction on the nickel source with a bismuth source, and then carrying out selenization treatment on the bismuth source and selenium in an inert atmosphere through a gas phase deposition mode, so that the bismuth-nickel bimetallic selenide composite material with two-dimensional nano-plate loaded nano-particles can be obtained after being cooled to room temperature. The method fully utilizes the low thermal stability of nickel diketone oxime, realizes the conversion of the rod-shaped-porous-small nano-particles in the pyrolysis-selenization process, and is favorable for the final uniform wrapping on the surface of the bismuth selenide nano-plate. The raw materials used in the method are cheap and rich in sources, the production cycle is short, and the stability is good. Meanwhile, the complementarity of the working potentials of the two components in the sodium storage process can also realize the efficient sodium storage in the whole voltage range.

A concrete temperature monitoring system is provided. The monitoring system includes: a temperature sensing module including a plurality of geopolymer thermoelectric sheets embedded in concrete, each geopolymer thermoelectric sheet being configured to detect a temperature difference of the concrete and generate and output a temperature voltage signal based on the temperature difference of the concrete, each geopolymer thermoelectric sheet including a thermoelectric particle made of a functional material and a base material, the functional material including bismuth antimonide or bismuth selenide, and the base material including river sand, a cementitious material, an alkali activator, and bismuth telluride powder; a data collection module configured to receive and forward the temperature voltage signal; and an on-site monitoring and forwarding module configured to determine the temperature difference of the concrete based on the temperature voltage signal and perform on-site monitoring on the temperature difference of the concrete in real time.

The invention belongs to the technical field of water-based zinc ion batteries, and relates to a preparation method of a high-performance long-circulation water-based zinc ion battery, which is characterized in that a bismuth selenide (Bi2SeO2) cathode material is prepared by a simple and mild one-step oil bath method and is combined with an ammonium iodide modified electrolyte, so that the construction of the high-performance long-circulation water-based zinc ion battery is realized. The modified electrolyte comprises a solvent, an electrolyte and an additive, wherein the dosage of the ammonium iodide additive is 0.03-0.15 M. The interaction among ions in the modified electrolyte obviously improves the proton affinity of the weakly acidic electrolyte, and regulates and controls the interface stability of the electrode and the electrolyte. Meanwhile, the ammonium iodide regulates and controls the redox reaction of the Bi2SeO2 cathode, co-intercalation of NH4 < + >, Zn < 2 + > and H < + > is achieved, and the reversible redox reaction of I <-> is activated. In addition, introduction of ammonium iodide induces the zinc surface passivation layer to grow in the vertical direction, and formation and growth of zinc dendrites of the zinc anode can be effectively inhibited. Therefore, the high-performance long circulation of the aqueous zinc ion battery is realized through the cooperation of the design of the cathode intrinsic material and the electrolyte, and the application of the zinc ion battery in the field of energy storage is expanded.

The invention discloses a controllable synthesis method of bismuth selenide nano-scale cracks and application of obtained bismuth selenide nano-scale cracks. Bi2Se3 powder is used as a raw material, and a trace amount of hydrogen (H2) is introduced in the growth process through a chemical vapor deposition (CVD) method to induce crack formation. In the chemical vapor deposition step, the pressure intensity of the system is 100-600 Torr; the deposition temperature is 380 to 600 DEG C; the deposition time is 5-40 minutes; the flow rate of the carrier gas is 100 to 400 s.c.c.m.; and the flow rate of the hydrogen is 0.3 to 3 s.c.c.m. The method is simple and convenient to operate, the crack density and distribution can be accurately regulated and controlled, the size of the obtained crack is controllable between 10 nm and 100 nm, the sample carrier concentration is high, the conductivity is remarkably enhanced, the nano-scale crack width can be used as a natural channel of a transistor, and the method is suitable for contact engineering of a high-performance short-channel transistor device.

The application discloses a method for controlling fractal fracture of a bismuth selenide film, and belongs to the field of nano or atomic scale devices. The method comprises the following steps: preparing a bismuth selenide film on a substrate; using an electrical device to make the bismuth selenide film generate initial fracture under the action of high current, and to generate a transverse crack; determining a material bridge position in the transverse crack; continuously increasing the voltage applied to both sides of a channel of the bismuth selenide film, and scanning a range of the bismuth selenide channel from 0 V to a maximum voltage of 10-100 V, so that the material bridge is fused and broken, and fractal cracks start to propagate from the material bridge; and through I-V scanning of a higher voltage, the fractal cracks of the bismuth selenide film are controlled. The method uses a pure electrical method to control fractal fracture of the bismuth selenide film, and has the advantages of high speed and simple process.

This invention relates to the field of energy harvesting and flexible sensor devices, and particularly to a triboelectric / infrared photoelectric coupled nanogenerator and its fabrication method. The triboelectric / infrared photoelectric coupled nanogenerator comprises an upper functional layer and a lower functional layer. The upper functional layer includes an upper support layer, an upper conductive layer, an electron transport layer, and a positive triboelectric / infrared photoelectric response layer. The lower functional layer includes a negative triboelectric layer, a lower conductive layer, and a lower support layer. The upper support layer coated with the upper conductive layer, the electron transport layer, and the positive triboelectric / infrared photoelectric response layer are sequentially bonded together, and the negative triboelectric layer and the lower support layer coated with the lower conductive layer are sequentially bonded together. The negative triboelectric layer connects with the positive triboelectric / infrared photoelectric response layer through edge protrusions, forming a gap. This invention uses tellurium-doped bismuth selenide oxide with a suitable bandgap and high electron mobility as the material for the positive triboelectric / infrared photoelectric response layer, enabling the fabricated triboelectric nanogenerator to possess excellent infrared light response characteristics and enhanced multi-field coupling performance.

The application discloses a kind of adjustable artificial neural network components based on topological insulator / 2D ferromagnetic heterojunction.The adjustable artificial neural network components of the application, from bottom to top, include substrate wafer, 2D ferromagnetic layer, topological insulator layer and metal layer;Among them, the 2D ferromagnetic layer uses chromium telluride CrTe2 or iron germanium telluride Fe3GeTe2 material;The topological insulator layer uses bismuth telluride Bi2Te3 or bismuth selenide Bi2Se3 material;The component generates self-spinning orbit moment of topological insulator layer and is regulated to 2D ferromagnetic magnetic moment, and corresponding multi-state magnetic domain flipping curve can realize the function of synapse;Meanwhile, the intrinsic magnetism of 2D ferromagnetic material enables adjustable activation function in data training, and then improves the training efficiency and accuracy of neural network.Compared with traditional RRAM, the component of the application realizes adjustable activation function, and has higher linearity and thermal stability.

The application belongs to the technical field of electrode materials, and particularly relates to a sodium dodecyl benzene sulfonate intercalated bismuth selenide composite material, a preparation method thereof and application thereof in a water-based zinc ion battery. The sodium dodecyl benzene sulfonate intercalated in the composite material can not only effectively buffer the volume change of inorganic materials in the charging and discharging process, relieve the stress concentration of the crystal lattice, improve the structural stability and the cycle life, but also expand the interlayer spacing, provide a faster diffusion channel for zinc ions, reduce the ion migration barrier, and further improve the rate performance of the electrode. The synthesis process of the application is relatively simple, can be synthesized on a large scale, has low consumption cost, and is expected to become a promising energy storage material in the water-based zinc ion battery.

The invention relates to the technical field of batteries, and discloses a battery for improving the rate capability of the battery based on a bismuth selenide nanosheet negative electrode and a preparation method, the negative electrode of the battery adopts composite negative electrode powder composed of bismuth selenide nanosheets and graphite as an active substance, the mass ratio of the bismuth selenide nanosheets to the graphite is 3: 97, and the ratio of the bismuth selenide nanosheets to the graphite is 3: 97. The mass ratio of the composite negative electrode powder to the binder to the conductive agent is 94: 3: 3. The preparation method comprises the following steps: preparing the bismuth selenide nanosheet by adopting a double-temperature-zone chemical vapor deposition method; mixing the nanosheet with graphite and other materials to prepare a negative plate; and the battery assembly is completed by adopting a multi-time negative pressure vacuumizing liquid suction method. According to the invention, the bismuth selenide nanosheet is introduced into the graphite negative electrode, the topological surface state of bismuth selenide is utilized to enhance electron conduction, and meanwhile, the layered structure provides a rapid diffusion path for lithium ions, so that the electrode impedance and the reaction impedance of the electrode are jointly reduced, and the high-rate charge-discharge performance and the cycle stability of the battery are improved.

The application belongs to the technical field of aqueous zinc ion batteries, and discloses a preparation method of a graphene oxide / bismuth selenide composite material and application of the graphene oxide / bismuth selenide composite material in an aqueous zinc ion battery. The composite material is synthesized through a simple secondary hydrothermal method. First, bismuth selenide is synthesized by taking bismuth chloride and selenium powder as raw materials, and then graphene oxide is added to perform secondary hydrothermal treatment, so that bismuth selenide uniformly coated with reduced graphene oxide (Bi2Se3@rGO) is obtained. The synthesis process is simple, environment-friendly and low in production cost. Compared with the prior art, the conductivity of bismuth selenide is increased by graphene coating, and the capacity attenuation caused by volume change is relieved. The prepared graphene oxide / bismuth selenide composite material is used as a positive electrode to assemble a battery, and the battery exhibits excellent specific capacity and cycle stability.