42 results about "Bismuth selenide" patented technology

The invention relates to a vacancy-assisted tin heterovalent doped bismuth selenide material as well as a preparation method and application thereof, Se vacancy defects existing in VSe-Bi2Se3 are utilized to assist in stable doping of Sn < 4 + > into Bi sites, so that the Sn-VSe-Bi2Se3 material is obtained. As the positive electrode material of the zinc ion battery, the Sn-VSe-Bi2Se3 shows high specific capacity, excellent rate capability and long-acting stable cycle performance, and has the advantages of simple and convenient process, mild conditions and suitability for large-scale production.

The invention discloses a Fano resonance sensor based on a surface plasmon coupled planar waveguide. The Fano resonance sensor sequentially comprises a zinc selenide prism, a bismuth selenide layer Bi2Se3, a Teflon layer Teflon, a silicon dioxide layer SiO2, a TiO2 layer and a dielectric layer to be measured from top to bottom. Compared with a traditional sensor, the sensing characteristic spectrum line width of the model is narrower, the local electromagnetic field is greatly enhanced, the radiation loss of the traditional SPR sensor is remarkably reduced, and the sensitivity is improved by at least two orders of magnitude. The SPR effect excited by the bismuth selenide material is coupled with a PWG mode generated by a planar waveguide structure composed of silicon dioxide, titanium dioxide and a to-be-detected medium to generate the optical sensor with Fano resonance as a mechanism, the sensitivity can reach 7700 RIU <-1 > or above within an existing parameter adjusting range, and compared with a traditional SPR sensor, the sensitivity of the optical sensor is greatly improved. Performance indexes such as sensitivity are improved by 2-3 orders of magnitude.

The present invention discloses a thermoelectric crystal Bi2Se3 and its preparation method and thermoelectric conversion device, wherein the preparation method comprises: (1) mixing elemental Bi and elemental Se and sealing them in a pointed quartz tube, then placing the pointed quartz tube at a first predetermined position below the growth point position in a Bridgman furnace, setting a first predetermined temperature and keeping it warm for a first predetermined time, wherein the Bridgman furnace includes a lower temperature zone, a partition zone, a middle temperature zone and an upper temperature zone from bottom to top, and the growth point position is located within a region 2 mm above the partition zone; (2) placing the pointed quartz tube at a second predetermined position above the growth point position in the Bridgman furnace, setting a second predetermined temperature and keeping it warm for a second predetermined time, and finally lowering the pointed quartz tube to a third predetermined position and annealing to obtain the thermoelectric crystal Bi2Se3. The thermoelectric crystal Bi2Se3 obtained by this method has excellent thermoelectric performance, and its power factor PF reaches 1300 μW / m·K at 50°C. 2 .

The application belongs to the field of two-dimensional semiconductor material preparation, and particularly relates to a tellurium-doped two-dimensional selenium bismuth oxide and a preparation method and application thereof. The application takes a tube furnace as a reaction equipment, takes bismuth selenide, bismuth oxide and tellurium as raw materials, takes nitrogen as a carrier gas, and takes a fluorophlogopite sheet as a growth substrate, and a tellurium-doped two-dimensional selenium bismuth oxide is prepared by a chemical vapor deposition method. The tellurium-doped two-dimensional selenium bismuth oxide prepared by the method has a regular shape, a large size of more than 40 mu m, and can be applied to the preparation of a photoelectric detector, and has good photoelectric response performance and excellent environmental stability.

The invention discloses a two-dimensional bismuth compound / gallium arsenide heterojunction, a preparation method thereof and application of the two-dimensional bismuth compound / gallium arsenide heterojunction in a photoelectric detector, and belongs to the field of semiconductor devices. Two-dimensional bismuth compounds (bismuth selenide or bismuth telluride) are prepared on a cleaned and pre-masked gallium arsenide substrate through an electron beam evaporation method, the two-dimensional bismuth compound / gallium arsenide heterojunction is formed, and the thickness of a two-dimensional bismuth compound film is controllable. And preparing a symmetric or asymmetric electrode by electron beam evaporation to obtain a prototype device of the photoelectric detector. The preparation process is simple, the repeatability is good, the detector can achieve the high detection rate (up to-1014 Jones) of optical signals from the ultraviolet band to the near-infrared band (367-1064 nm) under the room temperature condition and without bias voltage, and meanwhile the excellent cycling stability and air stability are achieved.

The invention relates to the technical field of sodium ion battery electrode materials, in particular to a bismuth-nickel bimetallic selenide-containing composite material and a preparation method and application thereof. The preparation method comprises the following steps: carrying out hydrothermal reaction on a rod-like copper butoxide-nickel precursor which is unstable in structure under high-temperature pyrolysis and is used as a nickel source and a bismuth source, and then selenizing with selenium in an inert atmosphere in a vapor deposition manner; and cooling to room temperature to obtain the bismuth-nickel bimetallic selenide composite material of the two-dimensional nano-plate loaded nano-particles. According to the method, low thermal stability of nickel dimethylglyoxime is fully utilized, and conversion of rod-porous-small nano-particles is achieved in the pyrolysis-selenylation process. The morphology transformation is beneficial to finally and uniformly coating the surface of the bismuth selenide nano-plate. The raw materials used in the method are cheap and rich in source, the preparation period is short, and the stability is good. Meanwhile, the complementarity of the working potentials of the two components in the sodium storage process can also realize efficient sodium storage in the whole voltage range.

The invention discloses a method for high-sensitivity detection of polystyrene plastic based on a metal semiconductor composite material, and belongs to the technical field of nano plastic detection. The detection method comprises the following steps: synthesizing bismuth selenide nanosheets, adding water to disperse, centrifuging, re-dispersing to obtain dispersion liquid, and adding chloroauric acid to react to obtain a metal semiconductor composite material; and mixing the solution to be detected, the dispersion liquid of the composite material and the aggregation agent to form a mixed solution to be detected, and collecting an enhanced Raman spectrum signal of the mixed solution to be detected through a Raman spectrometer to realize the detection of the nano plastic. The metal semiconductor composite material is prepared by reducing chloroauric acid through the bismuth selenide nanosheets, the preparation method is simple, and the composite material can better realize aggregation of nano-plastics and combination with Raman spectrum, and realizes enrichment and high-sensitivity detection of nano-plastic particles in a nano-plastic solution.

The invention belongs to the technical field of nano composite material preparation, and relates to a composite electrode material, in particular to a preparation method of a copper-doped bismuth selenide / carbon dot (CuxBi2-xSe3 / CDs) composite material, which comprises the following steps: sequentially adding an ethylene glycol solution of a copper salt, a bismuth salt and sodium selenite into a carbon dot dispersion liquid, uniformly dispersing, adding a reducing agent, and uniformly stirring to obtain the copper-doped bismuth selenide / carbon dot / CuxBi2-xSe3 / CDs / CuxBi2-xSe3 / CDs / CuxBi2-xSe3 / CDs composite material. And transferring the mixed system into a high-pressure reaction kettle, carrying out solvothermal reaction at 140-200 DEG C for 10-20 hours, carrying out centrifugal separation, washing the precipitate with an organic solvent and deionized water in sequence, and freeze-drying to obtain the product. The copper-doped bismuth selenide / carbon dot composite electrode material is prepared by utilizing a one-step solvothermal method and adjusting factors such as the use amount of the carbon dots and the reaction temperature, and shows excellent electrochemical lithium storage performance when being applied to a negative electrode of a lithium ion battery. The operation process is simple and easy to implement, the reaction efficiency is high, and large-scale production and industrial implementation are easy.

This application discloses a magnetic tunnel junction memory device based on a bismuth selenide and nickel iodide heterojunction substrate. The memory includes, from top to bottom, a top electrode, a SOT-MTJ, and a substrate. The SOT-MTJ includes, from top to bottom, a reference layer, a tunneling layer, a heavy metal layer, and a free layer. The substrate is a Bi2Se3 and NiI2 heterojunction structure. Bi2Se3 facilitates the conversion of current into spin-orbit torque, enabling current-induced field-free magnetization reversal. NiI2 has vertical magnetic anisotropy, which can reduce the critical reversal current. An artificial antiferromagnetic structure (CoFeB / MgO / Ta / W / CoFeB) with vertical magnetic anisotropy is adopted, with Ta / W composite heavy metal as the coupling layer. The two antiferromagnetically coupled CoFeB layers switch between parallel and antiparallel states under the action of SOT. Both Ta and W have large spin Hall angles, which are very beneficial for generating spin-orbit torque to reverse the magnetic moment.

The application discloses a single crystal growth method of Bi-O-Se-Cl four-component semiconductor material. The chemical formula of the Bi-O-Se-Cl four-component semiconductor material is Bi 10 O 12 SeCl4, each unit cell of the crystal contains 98 atoms, has a layered structure with two layers of [Bi 12 O 12 Se2Cl], two layers of [Bi6O 10 ] and four layers of [3Cl] alternately stacked along the c-axis. The growth method is as follows: bismuth powder and selenium powder are ground and mixed, and then a solid phase reaction is caused to obtain bismuth selenide; bismuth oxide, bismuth chloride and bismuth selenide are ground and mixed to obtain mixed powder 2, which is placed at the bottom of a quartz tube, vacuumized and sealed; the sealed quartz tube is horizontally placed in a two-zone furnace, and gas phase transportation is started; the hot end and the cold end of the two-zone furnace are respectively subjected to gradient heating and heat preservation, and after the end, the two-zone furnace is cooled, and thus Bi 10 O 12 SeCl4 crystals are obtained. The Bi 10 O 12 SeCl4 crystal has a complex layered structure and is a candidate material with intrinsic low thermal conductivity, and the growth method is simple and reliable.

The application provides a kind of bismuth selenide / zinc selenide@nitrogen-carbon composite material, its preparation method and application in sodium ion battery, the application first disperses zinc source, bismuth source and organic ligand in organic solvent, solvent hot reaction is carried out, precursor Bi / Zn-MOF is obtained, and then selenization is carried out to obtain Bi2Se3 / ZnSe@NC nanowire cluster, which is in the form of radial rays.The preparation method of the application has high yield and low cost.The product has a radial structure composed of linear structures, which can provide a large specific surface area;During the charging and discharging process, more active sites are provided, the volume expansion problem is solved, the battery has better stability, and the nanomaterial is safe, environmentally friendly, cheap and has other advantages.The material is applied to the negative electrode material of sodium ion battery, has good cycle performance, high energy density and other advantages.

The present invention belongs to the field of inorganic material technology, and specifically relates to a bismuth selenide (BiSe) nanowire / nanobelt and a preparation method thereof. The present invention provides a preparation method for bismuth selenide (BiSe) nanowire / nanobelt, which utilizes a simple chemical vapor deposition method, uses Bi2Se3 powder and Bi powder as growth sources, uses a quartz sheet with / without Au film as a growth substrate, and is heated to a certain temperature under the condition of a rare gas as a carrier gas, and then reacts to prepare the bismuth selenide (BiSe) nanowire / nanobelt. At the same time, the obtained bismuth selenide (BiSe) nanowire / nanobelt has a regular shape and a typical one-dimensional characteristic. In addition, the preparation method of the present invention has simple steps, can be quickly prepared in large quantities, has high product purity, and has little pollution to the environment. It is easy to operate and promote, and therefore has important research value and broad application prospects.

The application relates to a preparation method of a bismuth selenide film with adjustable defect concentration and application of the bismuth selenide film to a photoelectric synaptic device, and belongs to the technical field of two-dimensional photoelectric materials and photoelectric synaptic device preparation. The specific scheme is as follows: a Bi2Se3 film is prepared by adopting chemical vapor deposition, secondary treatment is conducted on the prepared Bi2Se3 film by in-situ heat treatment for avoiding air contact and keeping the original atmosphere to obtain a bismuth selenide film with adjustable defect concentration. The photoelectric synaptic device of the prepared bismuth selenide film is of an MSM structure, is simple in structure and has integration potential; the photoelectric response of the Bi2Se3 film photoelectric synaptic device has obvious basic synaptic behaviors of long-term potentiation, short-term potentiation and pulse enhancement, and can be applied to the field of artificial intelligence.

The present application relates to photothermal-thermoelectric synergistic material, photothermal-thermoelectric synergistic composite material, preparation method and application thereof, the photothermal-thermoelectric synergistic material includes bismuth selenide-gold composite material, bismuth selenide-gold composite material is hexagonal, gold material is located in the central hexagon.The advantage lies in, gold nanoparticles located in the center of hexagon are used as "heat source core", under the excitation of near infrared light, stable radial temperature gradient is formed with the base bismuth selenide, and then endogenous micro-current is generated based on the Seebeck effect of bismuth selenide, this wireless, non-invasive "photothermal-stable temperature difference-thermoelectric" cascade signal can effectively simulate the bioelectric environment of bone tissue, and the osteogenic differentiation of bone marrow mesenchymal stem cells is significantly promoted;The photothermal-thermoelectric synergistic material of the present application can effectively remove active oxygen, and has good antioxidant property.

The invention provides a bismuth selenate and bismuth oxyselenite two-dimensional fence single-crystal heterostructure as well as a preparation method and application thereof, and relates to the technical field of semiconductor materials. The preparation method comprises the following steps: S1, carrying out high-temperature annealing treatment on a substrate; s2, taking the pretreated substrate as a growth substrate, taking a bismuth selenide block and high-purity oxygen as raw materials, and performing chemical vapor deposition to obtain a two-dimensional single-crystal heterostructure; and S3, carrying out oxidation conversion to obtain the bismuth selenate and bismuth oxyselenite two-dimensional fence single crystal heterostructure. The high-orientation and high-crystallization-quality thin film channel is obtained through annealing pretreatment and symmetry matching of the substrate, the buffer layer grown in situ can effectively optimize an interface, integration of the channel and the gate dielectric is achieved through one step of oxidation, perfect integration of gate oxides on the two sides and the semiconductor channel is achieved, and the performance of the semiconductor device is improved. And the preparation of the two-dimensional GAA single crystal heterostructure with a wafer-level gate dielectric / semiconductor / gate dielectric three-layer structure is realized.

The application discloses a kind of multi-field regulated vector optoelectronic logic device and preparation method thereof, belong to vector optoelectronic logic device technical field, by integrating two-dimensional bismuth selenide material on LNOI substrate, using the sensitive characteristics of two-dimensional bismuth selenide material photo-thermal-electric response to laser position, power and external bias, a kind of multi-field regulated vector optoelectronic logic device is prepared, and vector optoelectronic logic device can realize different logic input values by regulating laser light source position, laser power size and external bias, so as to realize the output value of different size and vector direction photoelectric current.

The application provides a two-dimensional bismuth selenide oxide film transfer method and a hetero-integration method thereof, and relates to the technical field of semiconductor materials.The two-dimensional bismuth selenide oxide film transfer method provided by the application realizes lossless and clean transfer of the bismuth selenide oxide film through a composite transfer medium of a TRT layer / a support layer / a stress layer / an oxide layer.In the transfer process, the oxide layer serves as a contact layer to ensure that the bismuth selenide oxide is not damaged in the transfer process, and excellent electrical properties of the bismuth selenide oxide are ensured.The stress layer provides tensile stress, and can realize dry lossless peeling of wafer-level bismuth selenide oxide.The support layer can avoid cracking of the film in the peeling process, realize lossless and clean transfer of the bismuth selenide oxide film, and the bismuth selenide oxide film after transfer is complete and continuous, the surface is flat, the surface roughness is less than 0.65 nm, and the film uniformity is good.

The present invention relates to the field of semiconductors, and in particular to a preparation process of a TMBS device, comprising the following steps: step 1, cutting, polishing, cleaning and drying a silicon substrate in sequence, and using it as a substrate material; step 2, forming an epitaxial layer on the upper surface of the substrate material; step 3, processing the epitaxial layer by etching to form a groove, forming an oxide layer on the inner surface of the groove, and then filling it with polysilicon; step 4, setting a Schottky barrier layer, setting a metal electrode, and leading out a positive and negative electrode through the metal electrode, thus completing the preparation of the TMBS device. The device prepared by the present invention uses bismuth germanium selenide as an epitaxial layer, which greatly improves the breakdown characteristics of the device and the unstable factors of the leakage current, improves the breakdown resistance and reduces the leakage current density, thereby improving the reliability of the device.

The invention provides a preparation method of a bismuth selenide heterojunction photocatalyst with a pine branch-shaped hierarchical structure. The preparation method comprises the following steps: S1, adding Bi (NO3) 3 into dilute nitric acid, and dissolving to obtain a dissolved solution; s2, diluting the dissolved solution to serve as an electrolyte, and adopting graphite paper as an electrode; s3, applying direct-current voltage between the graphite paper, so that Bi < 3 + > ions in the electrolyte are reduced into metal Bi with a pine branch-shaped hierarchical structure on the graphite paper connected with the negative electrode, and a Bi / graphite paper composite precursor is obtained; s4, rinsing and drying the Bi / graphite paper composite precursor, and firing the Bi / graphite paper composite precursor with flame to obtain a paper flexible precursor; and S5, putting the flexible paper precursor and selenium powder into a crucible, then putting the crucible into a tubular furnace, and carrying out heat treatment in a nitrogen atmosphere. The photocatalyst obtained by the method has excellent photocatalysis and reducibility, and solves the problem of weak reducibility when single Bi2Se3 is used as a water treatment photocatalyst.

The invention discloses a method for preparing Bi3O2.5 Se2 through oxidation conversion of bismuth selenide and application of an obtained Bi3O2.5 Se2 semiconductor material, a chemical vapor deposition technology is adopted, reaction is carried out in a specific oxygen-containing mixed atmosphere, and Bi2Se3 powder, nanosheets and films can be directionally oxidized into Bi3O2.5 Se2 powder, nanosheets and films. In the chemical vapor deposition step, carrier gas is carried out in the atmosphere of argon and oxygen, the flow of the carrier gas is 100-500 s.c.c.m., and the oxygen accounts for 5-10% of the carrier gas; the system pressure intensity is 50 to 400 Torr; the deposition temperature is 300 to 600 DEG C; the deposition time is 1-12 hours. The method is simple in process and low in cost, and the generated Bi3O2.5Se2 film has higher crystal quality and ultralow interface roughness and is suitable for the microelectronic fields of high-performance field effect transistors, photoelectric devices and the like.

According to the bismuth triselenide / zinc selenide nitrogen-carbon composite material, the preparation method thereof and the application of the bismuth triselenide / zinc selenide nitrogen-carbon composite material in the sodium ion battery, a zinc source, a bismuth source and an organic ligand are dispersed in an organic solvent, a solvothermal reaction is conducted, a precursor Bi / Zn-MOF is obtained, then selenylation is conducted, and a Bi2Se3 / ZnSe-NC nanowire cluster is obtained and is in a radial shape. The preparation method is high in yield and low in cost. The product is of a radial structure composed of lines, and a large specific surface area can be provided; the nano-material provides more active sites in the charge-discharge process, solves the problem of volume expansion, enables the battery to have better stability, and has the advantages of safety, environmental protection, low price and the like. The material is applied to a sodium-ion battery negative electrode material and has the advantages of good cycle performance, high energy density and the like.

The present invention provides: a bismuth compound represented by chemical formula 1, which can be effectively usable as a thin film precursor; and a composition for forming a thin film, comprising same. In addition, the present invention provides a method for synthesizing bismuth selenide (Bi2Se3) with excellent uniformity and high purity by using the composition for forming a thin film. [Chemical formula 1] (In chemical formula 1, R1) to R12 are each independently linear or branched C1-C10 alkyl.)

The invention relates to a bismuth selenide / carbon dot composite negative electrode material and a preparation method and application thereof, the composite negative electrode material comprises the following raw materials: carbon quantum dots, bismuth salt, selenite, a reducing agent and an organic solvent, and the diameter of the carbon quantum dots is 2-10nm. The nanoscale bismuth selenide / carbon dot composite negative electrode material is constructed in situ through a one-step solvothermal method, the lithium ion diffusion path can be shortened, the conductivity of the bismuth selenide negative electrode material and the structural stability of the bismuth selenide negative electrode material in the charging and discharging process are enhanced, and then the lithium storage performance of the electrode material is effectively improved. The capacity of the prepared nanoscale bismuth selenide / carbon dot composite negative electrode material is remarkably improved, and the cycle performance of the nanoscale bismuth selenide / carbon dot composite negative electrode material has obvious advantages in reported bismuth selenide-based materials.

The embodiment of the invention relates to a composite negative electrode material and a preparation method and application thereof. The preparation method comprises the following steps: weighing a proper amount of a bismuth-containing compound, carrying out ultrasonic dispersion in an organic solvent to form a first mixed solution, and adding an organic ligand and a selenium-containing compound into the first mixed solution under a continuous stirring condition to obtain a second mixed solution; transferring the second mixed solution into a high-temperature and high-pressure reaction kettle for solvothermal reaction; carrying out solid-liquid separation on a solvothermal reaction product through centrifugation, collecting a precipitate, washing with deionized water and ethanol respectively, and drying to obtain bismuth selenide powder; the preparation method comprises the following steps: weighing a proper amount of phenolic resin powder and a surfactant, dissolving the phenolic resin powder and the surfactant in absolute ethyl alcohol, uniformly stirring and mixing, adding bismuth selenide powder, and carrying out spray drying to obtain a bismuth selenide / porous carbon composite material precursor; and sintering the bismuth selenide / porous carbon composite material precursor in a protective atmosphere, cooling to room temperature, and carrying out acid pickling, suction filtration and drying to obtain the bismuth selenide / porous carbon composite negative electrode material.

The invention relates to a semi-vertical heterojunction photoelectric detector and a manufacturing method thereof, belongs to the technical field of photoelectric detectors, and solves the problems that high dark current is caused by high mobility of bismuth selenide oxide and responsivity is limited by high recombination rate. The device comprises a semiconductor substrate; the first electrode and the second electrode are respectively located at two opposite sides of the semiconductor substrate above the semiconductor substrate; a channel region between the first electrode and the second electrode; the bismuth oxyselenide layer is located above the first electrode and on the inner side wall of the first electrode; the tungsten disulfide layer is located above the bismuth selenide layer, in the remaining channel region and above the second electrode so as to form a bismuth selenide-tungsten disulfide heterojunction with the bismuth selenide layer, and the tungsten disulfide layer is not in contact with the first electrode. A heterojunction is constructed through WS2 and two-dimensional Bi2O2Se, a strong built-in electric field on a heterojunction interface is used for inhibiting dark current, the heterojunction reduces the probability of carrier recombination, and great help is provided for improving photoelectric properties such as light responsivity of a heterojunction device.

The application belongs to the technical field of two-dimensional semiconductor nanomaterials, and discloses a method for preparing high-purity bismuth selenide by regulating and controlling precursor concentration. The application realizes full reaction and precise matching of bismuth source and selenium source by precisely controlling the concentration of bismuth source in a bismuth precursor solution, the concentration of selenium source in a selenium precursor dispersion, and optimizing the molar ratio of bismuth and selenium, effectively avoids the generation of unreacted precursor residues and impurities, and the prepared bismuth selenide nanomaterial has extremely high purity, does not need an additional purification process, reduces the preparation cost, ensures excellent physicochemical properties of the material, and can meet the stringent requirements of photothermal, biomedical and other fields for high-purity bismuth selenide materials.

The invention provides a large-size wafer-level bismuth selenide single-crystal thin film as well as a preparation method and application thereof, and relates to the technical field of semiconductor materials. The large-size wafer-level bismuth selenide single-crystal thin film is a continuous and uniform bismuth selenide single-crystal thin film, and the wafer diameter of the large-size wafer-level bismuth selenide single-crystal thin film is larger than or equal to 4 inches. The preparation method of the large-size wafer-level bismuth selenide single-crystal thin film is simple in process, high in controllability, low in cost and large in thin film size and can be applied to batch production of the large-size wafer-level bismuth selenide single-crystal thin film, the size of the produced wafer-level bismuth selenide single-crystal thin film can reach 4 inches or above, and the wafer-level bismuth selenide single-crystal thin film is flat in surface, consistent in domain orientation and high in yield. The bismuth selenide single crystal film has good crystallinity and excellent photoelectric properties, and lays a foundation for application of the bismuth selenide single crystal film in the photoelectric field.

The invention discloses a manganese-doped bismuth selenide composite material, a preparation method thereof and application of the manganese-doped bismuth selenide composite material in an aqueous zinc ion battery, and belongs to the technical field of electrode materials. The manganese-doped bismuth selenide composite material is synthesized and prepared through a simple hydrothermal reaction, and manganese doping not only effectively expands interlayer spacing and provides more active sites, but also promotes ion diffusion and charge transfer, so that internal resistance is reduced, the conductivity of the manganese-doped bismuth selenide positive electrode material is improved, and the service life of the manganese-doped bismuth selenide positive electrode material is prolonged. And the manganese atoms are doped and can be used as a support column to maintain the structural stability of the material, so that the water-based zinc ion battery has higher specific capacity. The preparation method has the advantages of simple synthesis process, large-scale synthesis and low consumption cost, and is expected to become a promising energy storage material in aqueous zinc ion batteries.

The invention provides a double-layer spiny iron diselenide / bismuth selenide nano-array composite material, a preparation method and application thereof, an electrolyte and a mixed ion rechargeable battery, compared with the prior art, the double-layer spiny iron diselenide / bismuth selenide nano-array composite material is prepared by firstly forming a double-layer spiny iron oxide / bismuth oxide-precursor under a hydrothermal reaction condition and then further performing selenylation treatment, so that the double-layer spiny iron diselenide / bismuth selenide nano-array composite material is obtained. And the FeSe2 / Bi2Se3 nano array composite material is obtained. Compared with a single spiny structure, the large-volume double spiny structure has a larger specific surface area, the uniform branch spiny structure increases transfer of electrons and ions, a heterogeneous interface formed by FeSe2 and Bi2Se3 and the synergistic effect of selenium vacancies enable the battery to have good cycle performance and stable coulombic efficiency under the adaptation of APC-CTAB-NaTFSI-H2O salt-in-water electrolyte, and the battery can be applied to the field of lithium ion batteries. Meanwhile, the charge-discharge capacity of the battery is improved, and the charge-discharge efficiency of the battery is improved in electrode process dynamics; the raw materials are cheap, and the synthesis method is batch-controllable.

This invention relates to photothermal-thermoelectric synergistic materials, photothermal-thermoelectric synergistic composite materials, preparation methods, and applications. The photothermal-thermoelectric synergistic materials include bismuth selenide-gold composite materials, wherein the bismuth selenide-gold composite material is hexagonal, with the gold material located at the center of the hexagon. Its advantages lie in utilizing the gold nanoparticles located at the center of the hexagon as a "heat source core," which, under near-infrared light excitation, forms a stable radial temperature gradient with the substrate bismuth selenide, thereby generating an endogenous microcurrent based on the Seebeck effect of bismuth selenide. This wireless, non-invasive "photothermal-stable temperature difference-thermoelectric" cascade signal can effectively simulate the bioelectrical environment of bone tissue, significantly promoting osteogenic differentiation of bone marrow mesenchymal stem cells. The photothermal-thermoelectric synergistic material of this invention can effectively remove reactive oxygen species and has good antioxidant properties.