44results about How to "Good photoelectric response" patented technology

A process for preparing TiO2 film at room temperature includes such steps as evaporating metal titanium on electrically conductive substrate by vacuum sputter method and electrochemically oxidizing it. The resultant film has nano-class minipore structure and can generate photocurrent and photovoltage. After it is sensitised by dye, it can be used for solid-state or liquid-state solar battery.

The invention relates to the technical field of solar cell production methods, in particular to a manufacturing method of a back passivation cell. The method comprise the following process steps of: firstly, washing and flocking a P-type monocrystalline silicon piece; carrying out B diffusion; putting into an oxidation furnace for growing wet oxygen; etching the front side of the silicon piece with etching slurry, and then washing the silicon piece with ionized water and ultrasound; carrying out P diffusion on the silicon piece; etching edges with plasmas; washing with a HF solution; putting into the oxidation furnace for growing thin and dry oxygen; depositing silicon nitride on the front side of the silicon piece, and depositing silicon nitride or silicon carbide or sputtering aluminum on the back side of the silicon piece; and finally carrying out electrode printing and sintering. In the invention, laminating passivation is simultaneously applied to the front side and the back side, meanwhile, the B diffusion is applied to the back side, and the cell has excellent properties of front and back passivation, therefore, the cell has favorable photoelectric response in a long-wave band, in addition, the back side subjected to laminating passivation has favorable reflection action so that protons reaching the back side are reflected to a cell piece once again, and thus, the protons can be utilized fully.

The invention discloses a method for spontaneously depositing three-dimensional graphene on a conductive substrate and belongs to the field of a functional material. The method comprises the following steps of: step one, preparing an 8-20 mg/mL oxidized graphene solution by an oxidizing graphite stripping method; step two, diluting the 8-20 mg/mL oxidized graphene solution so that the concentration of the oxidized graphene solution is changed into 0.5-3 mg/mL; step three, putting the conductive substrate in the oxidized graphene solution for standing, taking out the conductive substrate after reacting for 6-12 hours, thereby obtaining the conductive substrate with three-dimensional graphene deposited on the surface of the conductive substrate; and step four, directly carrying out freeze drying on the three-dimensional graphene obtained in the step three or performing freeze drying after washing, thus obtaining dry porous functionalized three-dimensional graphene or pure dry porous three-dimensional graphene. The method is simple in preparation process and friendly to environment; and the obtained three-dimensional graphene is three-dimensional and porous in structure, and has the characteristics of large specific surface area and good toughness.

The invention discloses an anodization two-step preparation method of a cuprous oxide nanosheet powder material. The method comprises the following steps: anodization: using an ammonium chloride buffer solution as an electrolyte, regulating the pH value of the electrolyte to 4-10, and carrying out anodization reaction by using a copper foil as the anode and a graphite electrode or platinum electrode as the cathode; and foaming treatment: after the reaction finishes, cleaning the copper foil, drying, immersing the copper foil in a low-concentration oxydol solution, carrying out foaming reaction for 10-60 minutes, taking out, flushing, and drying to obtain the cuprous oxide nanosheet powder material which is attached to the copper foil substrate. The preparation technique disclosed by the invention is simple and easy to implement, has the advantages of low energy consumption, low cost and no pollution, is suitable for mass production, and has very important meanings for saving the energy sources and resources and improving the environment; and the prepared powder material has the advantages of large specific area and high catalytic activity, can be well attached to the substrate, and is convenient for recovery and reutilization.

The invention relates to a composite film, and specifically relates to a polyoxometallate-based composite film. According to the invention, the Keplerate type polyoxometallate and water-soluble polyphenylenevinylene derivatives are taken as raw materials, a preprocessed ITO conductive glass is taken as the substrate, and a composite film having the advantage of photoelectric response is prepared through the layer-by-layer self-assembly technology. The whole thin film preparation process adopts an aqueous solution, so the preparation process is environmental friendly and harmless, and the operation is simple and practicable. The prepared composite film shows good photoelectric response through photocurrent transient tests, and the prepared composite film is a photoelectric system having potential application foreground.

The invention relates to a multifunctional polyurethane derivative containing a triarylamine structure and a tetrastyrene group as well as a preparation method and the application thereof. The invention aims to solve the problem that conventional multifunctional materials have few function types. The multifunctional polyurethane derivative provided by the invention is prepared by firstly synthesizing two monomers and 1,2-bis(4-hydroxyphenyl)-1,2-diphenylethylene containing a hydroxyl structure and simultaneously introducing 4,4'-diphenylmethane diisocyanate by means of copolymerization. The multifunctional polyurethane derivative has electrochromism and fluorescence sensing hole transport functions, can be used as an automotive rearview mirror material and a display material and can be used for preparing explosive detection and memory performance devices. The multifunctional polyurethane derivative provided by the invention is applied to the field of multifunctional materials.

The invention relates to an amorphous tellurium-cadmium-mercury/crystalline silicon heterojunction infrared-detector, which is characterized by being composed of a crystalline silicon substrate, amorphous tellurium-cadmium-mercury, a first metal electrode and a second metal electrode, wherein the amorphous tellurium-cadmium-mercury and the crystalline silicon substrate form heterojunction, the first metal electrode is connected with the amorphous tellurium-cadmium-mercury, and the second metal electrode is connected with the crystalline silicon substrate. The preparation process comprises the following steps of substrate cleaning, amorphous tellurium-cadmium-mercury film preparation, photosensitive surface forming, metal electrode preparation and package test; or substrate cleaning, second metal electrode preparation, amorphous tellurium-cadmium-mercury film preparation, photosensitive surface forming, first metal electrode preparation and package test. The amorphous semiconductor material has no selectivity for the substrate, the lattice matching performance between materials forming heterojunction is better, and the significant photoelectric response exists. The optimum working temperature of the detector is close to room temperature, two stages of semiconductors are utilized for refrigeration, and the weight, the power consumption and the manufacturing cost of the infrared detector assembly are reduced.

The invention aims to provide a controllable and perpendicular bismuth selenide nanosheet thin film. The thin film comprises Bi2Se3 nanosheets perpendicular to a matrix, wherein the sizes of the nanosheets are 50 nanometers to 50 micrometers. The Bi2Se3 thin film is prepared by a chemical vapor deposition method. By the method, the high-quality thin film having obvious photoelectric response can be controllably prepared, it is found out that the thin film has N-type conductive characteristic by test, the thin film and a P-type silicon substrate can form an N-type thin film/P-type silicon waferdual-layer structure, and the thin film has obvious visible light and near-infrared light photoelectric response capability and relatively rapid photoelectric response time, particularly has high photoresponse capability at a near-infrared wave band and has favorable electric detection application prospect.

The invention relates to a preparation method and application of a biochemical sensor. The cerium and silver doped antimony tungstate is used as a substrate material, the large specific surface area of the cerium and silver doped antimony tungstate can increase capture of light and loading of biomolecules, doping of cerium and silver elements can provide an electronic path, a plasma effect is caused, and the separation efficiency of photo-generated charges is improved. Silver sulfide grows on cerium and silver doped antimony tungstate through in-situ consumption of part of silver ions by adopting a dipping method, and meanwhile, an energy band matching structure formed by modifying indium sulfide on cerium and silver doped antimony tungstate/silver sulfide has good photoelectric response. On the other hand, cadmium sulfide/polydopamine with excellent conductivity is used as a signal marker, polydopamine can be directly combined with biomolecules through Michael addition or Schiff base, cadmium sulfide can be better matched with cerium and silver doped antimony tungstate/silver sulfide/indium sulfide in energy bands, and the photoelectric conversion efficiency of the sensor is effectively improved. The biochemical sensor constructed based on the method has a wide linear range and high sensitivity, and has important significance on detection of a small cell lung cancer marker neuron-specific enolase.

The invention discloses a preparation method of a Fe2O3 thin film electrode and application of the Fe2O3 thin film electrode to a photoelectric chemical glucose sensor. The preparation method comprises the steps that ferric nitrate is dissolved in ethanol to obtain an iron source liquid precursor; the surface of a conductive substrate is rotatably coated with the iron source liquid precursor to obtain a thin film precursor; and in the rotatably coating process, the number of layers of rotatably coating is at least one layer, the layers are firstly heated to 145-155 DEG C after each layer of rotatably coating, and then are heated to 345-355 DEG C to treat, and the thin film precursor is sintered to obtain the Fe2O3 thin film electrode. The Fe2O3 thin film electrode prepared by the preparation method is directly assembled into the photoelectric chemical sensor for detecting glucose, and has the advantages of good selectivity and quick response. In addition, the preparation method is simple and has no pollution, the preparation process of the glucose photoelectric chemical sensor is simple, and a high commercial application prospect is achieved.

The invention discloses an inorganic perovskite thick film composite material semiconductor device and a preparation method thereof; by adoption of the preparation method, continuous growth can be carried out, and an X-ray detector of a perovskite polycrystalline thick film with large size and high crystallinity is prepared, wherein the structure of the detector is transparent glass/CsPbBr3 perovskite polycrystalline thick film/Au electrode full-inorganic perovskite planar semiconductor detector. The prepared detector is relatively thick in thickness, relatively high in switching ratio, relatively high in response speed and excellent in water oxygen stability. The preparation method of the semiconductor detector is simple in steps, low in cost, controllable in low temperature in the process, and the prepared CsPbBr3 material is excellent in moisture resistance and heat resistance; and the method is applied to large-scale commercial production and has remarkable industrial popularization value.

The invention belongs to the technical field of photoelectrochemistry, and provides preparation of a three-dimensional conductive framework and an application of the three-dimensional conductive framework in a ferric oxide photo-anode. The three-dimensional conductive framework is obtained by covering two layers of thin films formed by polystyrene spheres with grain composition on the surface of conductive glass FTO through a physical deposition method, then spin-coating a conductive substrate solution and then sintering. The three-dimensional conductive framework can be used for preparing a ferric oxide photo-anode, namely the three-dimensional conductive framework is used as a substrate to be attached to a ferric oxide semiconductor film. The prepared iron oxide semiconductor film grown on the three-dimensional conductive framework in situ has excellent photoelectric response, and compared with an iron oxide semiconductor film grown on FTO in situ, the starting potential of the iron oxide semiconductor film in situ is shifted by 0.23 mV negatively, and the light current is improved by 8 times and reaches 1.2 mA/cm<2> (1.23 V vs.RHE.). Meanwhile, the whole preparation method is simple, complex preparation equipment is not needed, and industrialization is facilitated.

The invention relates to a preparation method and application of a self-powered sensor. Specifically, the invention designs a self-energized sensor which utilizes a photoanode WO3/In2S3 and a photocathode Pt-ZnO/Bi2S3 to promote generation of anode photocurrent at the same time, and the self-energized sensor can be used for photoelectrochemical immunosensing detection. Under the irradiation of visible light, the Pt-ZnO/Bi2S3 serving as the photoelectric cathode has a relatively good energy band matching structure and can provide stable cathode photocurrent; the WO3/In2S3 heterostructure provides stable anode photocurrent for the photoanode substrate material, and the larger specific surface area of the WO3/In2S3 heterostructure can increase the capture of light and the load of biomolecules. In addition, photo-induced electrons of the photoanode WO3/In2S3 flow along an external circuit to attract photo-induced holes of the photocathode Pt-ZnO/Bi2S3, the carrier transmission rate is increased, and the photocurrent response of the anode is improved. The prepared BiNS-Fe@Fe serves as a marker, competitively consumes light energy and electron donors, the stability and sensitivity of the sensor are improved, and the self-powered sensor constructed by the invention is used for rapid and sensitive photoelectrochemical immunosensing detection of tumor markers, and has a wider detection range and a lower detection limit.

The invention discloses a bismuth iodine cluster hybrid perovskite-like material based on a 1-butyl-4-methylpyridinium cation and a preparation method of the bismuth iodine cluster hybrid perovskite-like material. The perovskite-like compound hybrid material is synthesized from 1-butyl-4-methyl pyridine chloride, bismuth iodide and potassium iodide, the molecular structure of the perovskite-like compound hybrid material is (BMPY) 3 (Bi2I9), and in the formula, BMPY is a 1-butyl-4-methylpyridinium cation. The hybrid semiconductor material is a perovskite-like semiconductor material with moderate forbidden band width and good photoelectric response effect, and DFT calculation shows that the hybrid semiconductor material is a charge transfer salt. The material has the advantages of being cheap, completely free of lead and easy to purify, and has good solubility and stability. The material can be used as a semiconductor material in a halide-based perovskite photoelectric device.

The invention discloses a double-photosensitive double-electrode photoelectrochemical sensor as well as a preparation method and application thereof. The sensor comprises a counter electrode and a working electrode, wherein the surface of the counter electrode is modified with three-dimensional graphite phase carbon nitride loaded with gold nanoparticles, the surface of the counter electrode is modified with nitrogen-doped carbon-cuprous oxide shell-core tetrakaidecahedron, and the working electrode is self-assembled with a specific aptamer probe. The preparation method comprises the following steps: modifying three-dimensional graphite phase carbon nitride loaded with gold nanoparticles, a nitrogen-doped carbon-cuprous oxide shell-core tetrakaidecahedron and a specific aptamer probe on conductive glass, and constructing a dual-photosensitive dual-electrode system by the three-dimensional graphite phase carbon nitride, the nitrogen-doped carbon-cuprous oxide shell-core tetrakaidecahedron and the specific aptamer probe. The double-photosensitive double-electrode photoelectrochemical sensor disclosed by the invention has the advantages of high stability, long service life, strong anti-interference capability, wide detection range, low detection limit and the like, can realize specific detection of pollutants (such as antibiotics) in media such as water bodies and organisms, is high in utilization rate, and has very good use value and application prospect.