44results about How to "Good photoelectric response" patented technology

The invention discloses an in-situ compounded carbon quantum dot - titanium dioxide nano materials with a titanium dioxide nanotube array, and a preparation method thereof. Firstly, the titanium dioxide nanotube array without a fixed shape is obtained with an anodic oxidation method, and the in-situ compounded carbon quantum dot - titanium dioxide nano materials are obtained with a solvent-thermalmethod. The in-situ compounded carbon quantum dot - titanium dioxide nano materials with the titanium dioxide nanotube array, prepared with the preparation method disclosed by the invention, have obvious photocurrent response, and excellent light degradation property for organic simulated pollutants under excitation by ultraviolet and visible light.

The invention discloses an in-situ compounded carbon quantum dot - titanium dioxide nano materials with a titanium dioxide nanotube array, and a preparation method thereof. Firstly, the titanium dioxide nanotube array without a fixed shape is obtained with an anodic oxidation method, and the in-situ compounded carbon quantum dot - titanium dioxide nano materials are obtained with a solvent-thermalmethod. The in-situ compounded carbon quantum dot - titanium dioxide nano materials with the titanium dioxide nanotube array, prepared with the preparation method disclosed by the invention, have obvious photocurrent response, and excellent light degradation property for organic simulated pollutants under excitation by ultraviolet and visible light.

The invention discloses a preparation method for stable full-inorganic perovskite A2PdX6 nanocrystalline with no lead and low band gap (A=Cs, Rb, K or multiple mixing; X=Cl, Br, I or multiple mixing thereof), the preparation method takes A2PdX6 micron-crystalline as a precursor material, and then the nanocrystalline is synthesized by using a rapid antisolvent method, the main synthesis process isas follows: Firstly, A2PdX6 micron-crystalline is synthesized by a solution method or a solid phase method; then the obtained A2PdX6 micron-crystalline is dissolved in a strong polar solvent under heating condition to obtain a clear and transparent precursor solution; after the precursor solution is cooled to room temperature, a certain amount of the precursor solution is rapidly added to the antisolvent under the stirring condition, and A2PdX6 nanocrystalline colloidal solution with a particle size about 3 nm is rapidly formed, the synthesis method provided by the invention is fast, simple, can be operated at normal temperature, has good reproducibility and is environmentally friendly; at the same time, the product has uniform size, good dispersibility, high stability and excellent photoelectric response; the preparation method can be used in fields such as light or photoelectrocatalysis, photodetectors, solar cells.

The invention discloses a method for spontaneously depositing three-dimensional graphene on a conductive substrate and belongs to the field of a functional material. The method comprises the following steps of: step one, preparing an 8-20 mg / mL oxidized graphene solution by an oxidizing graphite stripping method; step two, diluting the 8-20 mg / mL oxidized graphene solution so that the concentration of the oxidized graphene solution is changed into 0.5-3 mg / mL; step three, putting the conductive substrate in the oxidized graphene solution for standing, taking out the conductive substrate after reacting for 6-12 hours, thereby obtaining the conductive substrate with three-dimensional graphene deposited on the surface of the conductive substrate; and step four, directly carrying out freeze drying on the three-dimensional graphene obtained in the step three or performing freeze drying after washing, thus obtaining dry porous functionalized three-dimensional graphene or pure dry porous three-dimensional graphene. The method is simple in preparation process and friendly to environment; and the obtained three-dimensional graphene is three-dimensional and porous in structure, and has the characteristics of large specific surface area and good toughness.