Method for spontaneously depositing three-dimensional graphene on conductive substrate

A conductive substrate, spontaneous deposition technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of insufficient graphene reduction, cumbersome preparation process, difficult to ensure assembly, etc., to achieve good photoelectric response, process Simple, lightweight effect

Active Publication Date: 2013-08-28
BEIJING TUNGHSU CARBON ADVANCED MATERIALS TECH CO LTD
View PDF2 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the existing graphene preparation process, which is cumbersome, time-consuming, and involves toxic reagents, and the prepared graphene is not completely reduced, and it is difficult to ensure that it is assembled into a three-dimensional porous structure, the purpose of the present invention is to provide a conductive substrate. A method for spontaneously depositing three-dimensional graphene on the Internet. The preparation process of the method is simple, environmentally friendly, low in cost, and suitable for large-scale production. The three-dimensional graphene material prepared by the method is three-dimensional and porous, and has a large volume and high quality. Lightweight, large specific surface area, good flexibility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for spontaneously depositing three-dimensional graphene on conductive substrate
  • Method for spontaneously depositing three-dimensional graphene on conductive substrate
  • Method for spontaneously depositing three-dimensional graphene on conductive substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] 1. Prepare a 20 mg / mL graphene oxide solution using the oxidized exfoliated graphite method (Hummers method);

[0039] 2. Dilute the 20mg / mL graphene oxide solution with distilled water so that the concentration of the graphene oxide solution is 3mg / mL;

[0040] 3. Put the Zn conductive substrate in the graphene oxide solution prepared in the second step and let it stand at room temperature, take out the conductive substrate after reacting for 6 hours, the graphene oxide is reduced to obtain graphene, and deposit on the surface of the conductive substrate;

[0041] 4. First immerse the graphene obtained in the previous step into liquid nitrogen to freeze, and then put it into a freeze dryer at -50°C to freeze-dry to obtain the product. The product is tested, and the ZnO can be seen from the X-ray powder diffraction test chart. The characteristic peaks (32°, 34°, 36°, 48°, 57°, 63°, 66°, 68° and 69°), and the characteristic peak of graphene oxide (10°) disappeared, and t...

Embodiment 2

[0043] 1. Prepare 8 mg / mL graphene oxide solution by using the oxidized exfoliated graphite method (Hummers method);

[0044] 2. Dilute the 8mg / mL graphene oxide solution with distilled water so that the concentration of the graphene oxide solution is 0.5mg / mL;

[0045] 3. Put the Fe conductive substrate in the graphene oxide solution prepared in the second step and let it stand at room temperature, take out the conductive substrate after reacting for 6 hours, graphene oxide is reduced to obtain graphene, and deposited on the surface of the conductive substrate;

[0046] 4. After the graphene obtained in the previous step is washed with 100 mL of 2mol / L hydrochloric acid solution, the graphene is first immersed in liquid nitrogen to freeze, and then freeze-dried in a freeze-dryer at -50°C to obtain the product. The product is detected, and the characteristic peak (10°) of graphene oxide disappears through the X-ray powder diffraction test chart, and the characteristic peak (23...

Embodiment 3

[0048] 1. Prepare a 14 mg / mL graphene oxide solution using the oxidized exfoliated graphite method (Hummers method);

[0049]2. Dilute the 14mg / mL graphene oxide solution with distilled water so that the concentration of the graphene oxide solution is 1.7mg / mL;

[0050] 3. Put the Cu conductive substrate in the graphene oxide solution prepared in the second step and let it stand at 30°C. After reacting for 10 hours, take out the conductive substrate, and the graphene oxide is reduced to obtain graphene, which is deposited on the surface of the conductive substrate;

[0051] 4. First immerse the graphene obtained in the previous step into liquid nitrogen to freeze, and then put it into a freeze dryer at -50°C to freeze-dry to obtain the product. The product is tested, and Cu can be seen from the X-ray powder diffraction test chart. 2 The characteristic peaks of O (40°, 47°, 68°, 82° and 86°), and the characteristic peak of graphene oxide (10°) disappeared, and the characteristi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for spontaneously depositing three-dimensional graphene on a conductive substrate and belongs to the field of a functional material. The method comprises the following steps of: step one, preparing an 8-20 mg/mL oxidized graphene solution by an oxidizing graphite stripping method; step two, diluting the 8-20 mg/mL oxidized graphene solution so that the concentration of the oxidized graphene solution is changed into 0.5-3 mg/mL; step three, putting the conductive substrate in the oxidized graphene solution for standing, taking out the conductive substrate after reacting for 6-12 hours, thereby obtaining the conductive substrate with three-dimensional graphene deposited on the surface of the conductive substrate; and step four, directly carrying out freeze drying on the three-dimensional graphene obtained in the step three or performing freeze drying after washing, thus obtaining dry porous functionalized three-dimensional graphene or pure dry porous three-dimensional graphene. The method is simple in preparation process and friendly to environment; and the obtained three-dimensional graphene is three-dimensional and porous in structure, and has the characteristics of large specific surface area and good toughness.

Description

technical field [0001] The invention relates to a method for spontaneously depositing three-dimensional graphene on a conductive substrate, belonging to the field of functional materials. Background technique [0002] Graphene is a layered structure composed of six-membered rings of carbon bonded together. Because graphene has high electrical conductivity, large specific surface area, and good chemical stability, environmental stability and mechanical stability, it is widely used in photoelectric materials, photocatalytic materials, energy storage and conversion materials (fuel cells, Li batteries, etc. ), magnetic absorbing materials and other applications have attracted the attention of researchers at home and abroad. [0003] At present, the method of preparing graphene in large quantities is to chemically reduce graphene oxide. At the same time, self-assembled three-dimensional graphene porous materials have a good effect on its application. However, the current prepar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184C01B32/198
Inventor 曲良体胡传刚翟相泉
Owner BEIJING TUNGHSU CARBON ADVANCED MATERIALS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap