Manufacturing method of back passivation cell

A manufacturing method and technology of back passivation, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of limited utilization of long-wavelength photons and solar energy conversion efficiency, and achieve superior front passivation and back surface passivation. Passivation performance, good reflection effect, good photoelectric response effect

Active Publication Date: 2011-02-16
TRINA SOLAR CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is: in order to solve the technical problem of solar energy conversion efficiency due to the limited utilization of long-wavelength photons, the present invention provides a method for manufacturing a back passivated battery that can effectively utilize long-wavelength photons

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  • Manufacturing method of back passivation cell
  • Manufacturing method of back passivation cell
  • Manufacturing method of back passivation cell

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Experimental program
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Effect test

Embodiment 1

[0023] The operation steps are as follows:

[0024] a. Select P-type monocrystalline silicon wafers, crystal plane (100), doping concentration 0.5Ωcm, perform routine cleaning after slicing, and texture the surface;

[0025] b. Put the textured silicon wafer into the B diffusion tube for diffusion. The temperature of the diffusion is 900°C, and the diffusion square resistance is 70Ω;

[0026] c. Put into the oxidation furnace to grow wet oxygen, thermally grown SiO 2 The film thickness is 80nm, and the oxidation temperature is 900°C;

[0027] d. Use NH as the main component 4 The etching slurry of HF etches the front side of the silicon wafer for 15 minutes to etch away the SiO 2 and Si in the B diffusion junction, keep the SiO on the back side 2 The presence of, and then use ionized water plus ultrasonic cleaning silicon wafer;

[0028] e. Put the silicon wafer into P diffusion for diffusion, the diffusion temperature is 830°C, and the diffusion square resistance is 60Ω;...

Embodiment 2

[0036] The operation steps are as follows:

[0037] a. Select P-type monocrystalline silicon wafers, crystal plane (100), doping concentration 2.5Ωcm, routine cleaning after slicing, and surface texture;

[0038] b. Put the textured silicon wafer into the B diffusion tube for diffusion. The temperature of the diffusion is 950°C, and the diffusion square resistance is 40Ω;

[0039] c. Put into the oxidation furnace to grow wet oxygen, thermally grown SiO 2 The film thickness is 120nm, and the oxidation temperature is 950°C;

[0040] d. Use NH as the main component 4 The etching slurry of HF etches the front side of the silicon wafer for 25 minutes to etch away SiO2 and Si in the B diffusion junction, and keep the SiO2 on the back side. 2 The presence of, and then use ionized water plus ultrasonic cleaning silicon wafer;

[0041] e. Put the silicon wafer into P diffusion for diffusion, the diffusion temperature is 850°C, and the diffusion resistance is 70Ω;

[0042] f. Plas...

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Abstract

The invention relates to the technical field of solar cell production methods, in particular to a manufacturing method of a back passivation cell. The method comprise the following process steps of: firstly, washing and flocking a P-type monocrystalline silicon piece; carrying out B diffusion; putting into an oxidation furnace for growing wet oxygen; etching the front side of the silicon piece with etching slurry, and then washing the silicon piece with ionized water and ultrasound; carrying out P diffusion on the silicon piece; etching edges with plasmas; washing with a HF solution; putting into the oxidation furnace for growing thin and dry oxygen; depositing silicon nitride on the front side of the silicon piece, and depositing silicon nitride or silicon carbide or sputtering aluminum on the back side of the silicon piece; and finally carrying out electrode printing and sintering. In the invention, laminating passivation is simultaneously applied to the front side and the back side, meanwhile, the B diffusion is applied to the back side, and the cell has excellent properties of front and back passivation, therefore, the cell has favorable photoelectric response in a long-wave band, in addition, the back side subjected to laminating passivation has favorable reflection action so that protons reaching the back side are reflected to a cell piece once again, and thus, the protons can be utilized fully.

Description

technical field [0001] The invention relates to the technical field of solar cell production methods, in particular to a method for manufacturing back passivated cells. Background technique [0002] Photovoltaic power generation is a very important field in the utilization of solar energy. It is an urgent task to seek new technologies, new materials, and new processes to improve battery conversion efficiency and reduce costs. [0003] The conversion efficiency is closely related to the reflectivity and photoelectric response of solar cells in various bands. The photoelectric response of existing mass-produced cells in the visible light band is relatively superior, but the utilization of long-wavelength photons is very limited. Contents of the invention [0004] The technical problem to be solved by the present invention is: in order to solve the technical problem of solar energy conversion efficiency due to the limited utilization of long-wavelength photons, the present i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘亚锋
Owner TRINA SOLAR CO LTD
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