41results about How to "Moderate band gap" patented technology

The invention belongs to the preparation fields of a photoelectric material and a thin film solar cell, and discloses a high-orientation antimony selenide thin film and a preparation method therefor, particularly an antimony selenide thin film with high orientation. The high-orientation antimony selenide thin film is a one-dimensional chain-like material; the high orientation refers to the thin film formed by the antimony selenide chin which is grown in a direction of <002>. The preparation method specifically comprises two steps of adopting a thermal evaporation method or other methods to prepare the antimony selenide thin film, and then performing a method for carrying out selenylation (sulfuration) processing. By adoption of the preparation method provided by the invention, the high-orientation antimony selenide thin film can be obtained; a more efficient antimony selenide thin film solar cell is expected to be obtained; and in addition, the preparation method is simple and feasible, and low in cost.

The invention discloses a novel and stable g-C3N4/NiO photoelectric hydrogen production electrode preparation method, and belongs to the technical field of inorganic chemistry and photoelectrocatalysis. The g-C3N4 light absorber is nonmetal and is made of nontoxic and easily available materials. The preparation method solves the problem that in the prior art, usually a toxic cadmium metal chalcogenide as the light absorber, and utilizes the g-C3N4 as the photoelectric cathode light absorption agent and cocatalyst for the first time. The preparation method includes: 1 taking FTO electro-conductive glass as the substrate and using a hydrothermal method to prepare ordered NiO films; and 2 immersing the NiO/FTO electrode obtained by the last step in the saturated thiourea solution for 4h, and then placing the NiO/FTO electrode in a muffle furnace for calcining for 2h by 500DEG C, and then taking out and obtaining the g-C3N4/NiO/FTO electrode. The preparation method is simple and easy to operate and is good for large-scale application.

The invention belongs to the technical field of green renewable energy and relates to a semiconductor nanocrystalline sensitized solar cell and a preparation method thereof. The semiconductor nanocrystalline sensitized solar cell is characterized in that a photoanode is sensitized with silver sulfide nanocrystalline. The photoanode sensitized with the silver sulfide nanocrystalline is non-toxic, the prepared silver sulfide nanocrystalline solar cell is green, nontoxic, environment-friendly, simple in preparation process and has excellent photovoltaic property. In addition, due to the fact that silver sulfide has appropriate energy gap, excellent cell photoelectric property is achieved.

The invention provides a preparation method of a bismuth oxyiodate photocatalyst. The preparation method comprises the following steps: adding bismuth nitrate pentahydrate into a glycol solvent, stirring and dissolving to obtain a solution; adding potassium iodate into the solution so that a molar ratio of the added potassium iodate to the bismuth nitrate pentahydrate is 1: 1, and continuing to stir; placing an obtained precursor into a high-speed centrifuge for centrifugal washing at a centrifugation rate of 6000-8000 rpm, washing with deionized water and absolute ethanol to remove impurities; placing samples obtained by centrifugation into an oven for drying; taking out the dried samples and placing into a muffle furnace, calcining in an air atmosphere for 1-2 h at 250-350 DEG C to obtain the bismuth oxyiodate photocatalyst. The bismuth oxyiodate photocatalyst obtained by the preparation method provided by the invention has excellent photocatalytic performance under ultraviolet light and visible light and has good photocatalytic removal ability on gas-phase zero-valent mercury in power plants.

The invention discloses a 1T-MoS2-modified ZnCoS solid solution hollow dodecahedral nanocomposite and a preparation method and application thereof. Firstly, a ZnCo-MOF is calcined at a high temperature to obtain a derivative of the ZnCo-MOF, then the derivative and molybdate are subjected to hydrothermal vulcanization reaction to obtain a MoS2/ZnCoS nanocomposite, and the ZnCo-MOF is a bi-metal organic framework material and is obtained through reaction of cobalt acetate, zinc acetate and dimethylimidazole. The bi-metal organic framework material with a large specific surface area and a stablethree-dimensional space structure is used as a template, the ZnCo bi-metal oxide derivative is obtained through high-temperature calcination, and finally a mixture of the derivative and the molybdateis subjected to hydrothermal vulcanization to obtain the transition metal sulfide nanomaterial with high catalytic activity. The prepared hollow polyhedral MoS2/ZnCoS nanocomposite has high performance of producing hydrogen by water decomposition under photocatalysis.

The invention aims at relieving the problems of increasingly serious energy shortage and environmental pollution. The nickel sulfide/graphene-like carbonitride composite catalyst, which does not contain a noble metal, is prepared through a mild in-situ photodeposition method and is used for efficiently photocatalytically decomposing water to produce hydrogen. According to the method, the nickel sulfide/graphene-like carbonitride composite catalyst is prepared by using graphene-like carbonitride as a photosensitizer, nickel acetate as a nickel source and thiourea as a sulfur source. The preparation method is simple, efficient, low-carbon, environment-friendly and low-cost; further, the photocatalytic hydrogen production rate of the catalyst is high, and therefore, the nickel sulfide/graphene-like carbonitride composite catalyst has a quite good industrialized application prospect in the field of photocatalytic hydrogen production.

The invention provides a photovoltaic power generation system and a manufacture method. The photovoltaic power generation system comprises an array fluorescent optical waveguide and solar cells; the solar cells are arranged in the side surface of the array fluorescent optical waveguide; and the array fluorescent optical waveguide comprises a first substrate, a fluorescent layer and a second substrate which are arranged successively from top to bottom. The system and method are convenient in manufacture technology and easy to realize.

The invention discloses a preparation method and applications of a modified bismuth oxybromide nanometer material. According to the present invention, by adjusting the BiOBr synthesis condition, the specific surface area is increased on the basis of the changing of the morphology, such that the adsorption of BiOBr to Cr(VI) in water is enhanced while the contact area of the photocatalyst and the contaminant is increased so as to improve the photocatalytic reduction of BiOBr to Cr(VI); the material has suitable forbidden band width, and can absorb visible light, promote the rapid transfer of photogenerated electron holes, and reduce the recombination of electron holes so as to further improve the photocatalytic efficiency; and by using the material as the catalyst, the photocatalytic material obtained under the synthesis condition of pH value of 6 has strong adsorption and degradation ability to heavy metal Cr(VI) in wastewater, and can be well used in the heavy metal treatment in wastewater whether in high concentration pollution or low concentration pollution.

The invention relates to a method for rapidly preparing iodine-potassium co-doped carbon nitride as well as a product and an application of the iodine-potassium co-doped carbon nitride. The method comprises the following steps: accurately weighing melamine, potassium iodide and a deionized water solvent, adding melamine and potassium iodide into deionized water, and performing stirring and evaporating to dryness at a certain temperature; grinding and crushing the product, putting the processed product into a crucible with a cover, performing roasting in a muffle furnace, and naturally performing cooling; and adding the roasted product and elemental iodine into deionized water, performing grinding in a planetary ball mill for a period of time, performing filtering, washing and drying to obtain the iodine-potassium co-doped carbon nitride. The iodine-potassium co-doped carbon nitride obtained by the preparation method provided by the invention has the advantages of moderate energy gap, high separation efficiency of photo-induced electrons and holes, good methylene blue photocatalytic degradation effect, simple operation, few steps, easily available raw materials and low cost, and issuitable for large-scale production.

The present invention discloses a uniform flake CuInS2 nanometer crystal preparation method, which comprises the following steps: (1) sequentially adding CuCl2.2H2O, InCl3.4H2O and CH4N2S to an organic solvent to mix, stirring to completely dissolve, and then adding a weak reduction agent to uniformly mix, wherein the weak reduction agent is oxalic acid, citric acid or ascorbic acid; (2) transferring the mixture obtained from the step (1) to a pressure kettle to seal, carrying out a constant temperature reaction for 12 hours, and naturally cooling to a room temperature after completing the reaction; and (3) carrying out centrifugation, washing and drying on the product after the reaction in the step (2) to obtain the finished product. According to the present invention, a binary mixing solvent is adopted to replace the traditional single organic solvent, and a weak reduction agent is added to a reaction system after mixing so as to improve product agglomeration and obtain a nanometer photovoltaic material with characteristics of uniform nanometer flake structure, high relative solid yield, excellent light absorption property and suitable band gap width.

The invention discloses a method for preparing CuInS2 nanocrystals by using a mother liquor through a solvothermal process. The method comprises the following steps: 1, sequentially dissolving a Cu element source, an In element source and an S element source in a solvent, and stirring to obtain a clear solution; 2, transferring the clear solution to a pressure container for a reaction, and naturally cooling to room temperature after reaction ending; and 3, centrifuging products obtained in step 2, washing, and carrying out vacuum drying to obtain target products, wherein the solvent is one of or a mixture of N,N-dimethyl formamide and glycol. The method adopting the solvothermal process is cheap and convenient; the prepared nanocrystals have a uniform nanosheet structure, a high solid yield and a good optical absorption property; and the prepared CuInS2 nanocrystals have a highest optical absorption coefficient of 10<5> order of magnitude and a forbidden band width reaching 1.41eV, and the atom stoichiometric ratio of Cu:In:S is 1:0.89:1.93 and tends to a standard stoichiometric ratio of 1:1:2.

The invention provides a Ba3Zr2S7 thin film and a preparation method and application thereof, and is used for solving the technical problems of poor stability, environment pollution and uncomfortable forbidden bandwidth of the current perovskite thin film, the preparation method comprises the following steps: carrying out vulcanization reaction on BaCO3 and ZrO2 raw material powder to generate BaZrS3 powder, and preparing the BaZrS3 powder into a BaZrS3 target material; the preparation method comprises the following steps: carrying out vulcanization reaction on BaSO4 raw material powder to generate BaS powder, and preparing the BaS powder into a BaS target material; carrying out sputter coating on the two target materials to prepare a precursor film; and the precursor film is subjected to recrystallization treatment, and the Ba3Zr2S7 film is prepared. The Ba3Zr2S7 thin film which does not contain lead and is environmentally friendly, stable in performance and excellent in photoelectric property is obtained; the optical forbidden band width of the material is 1.5 eV, and the material has a good application prospect in the field of photovoltaic cells.

The invention discloses a bismuth iodine cluster hybrid perovskite-like material based on a 1-butyl-4-methylpyridinium cation and a preparation method of the bismuth iodine cluster hybrid perovskite-like material. The perovskite-like compound hybrid material is synthesized from 1-butyl-4-methyl pyridine chloride, bismuth iodide and potassium iodide, the molecular structure of the perovskite-like compound hybrid material is (BMPY) 3 (Bi2I9), and in the formula, BMPY is a 1-butyl-4-methylpyridinium cation. The hybrid semiconductor material is a perovskite-like semiconductor material with moderate forbidden band width and good photoelectric response effect, and DFT calculation shows that the hybrid semiconductor material is a charge transfer salt. The material has the advantages of being cheap, completely free of lead and easy to purify, and has good solubility and stability. The material can be used as a semiconductor material in a halide-based perovskite photoelectric device.

The invention discloses a symmetric conjugated polymer centered on a dithienoquinoxaline matrix and application of the symmetric conjugated polymer in an electrochromic device, the structural formula of the symmetric conjugated polymer centered on the dithienoquinoxaline matrix is as shown in formula (I), and the preparation method of the symmetric conjugated polymer comprises the following steps: dibrominated dithieno [2, 2, 4] triazolo [2, 2, 4] triazolo [2, 2, 4] triazolo [2, 2, 4] triazolo [2, 2, 4] triazolo [2 The preparation method comprises the following steps: mixing a 9, 9-diether fluorene as a raw material with a 9, 9-f: 3 ', 2'-h] quinoxaline parent monomer, carrying out Suzuki coupling reaction to obtain a symmetric monomer for polymerization reaction, and obtaining a polymer deposition film on a conductive substrate by using an anodic oxidation method. The dithienoquinoxaline-containing matrix center unit is introduced, so that the produced polymer material has a proper optical band gap and a relatively large electric dipole moment, and shows relatively high electrochromic developing efficiency, rich color change and optical contrast; a flexible device constructed on the basis still shows excellent electrochromic performance under the bending condition, and intelligent display with rapid electric response, mechanical stability and cycle stability is achieved.