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a g‑c 3 no 4 /nio photocathode preparation method

A photocathode, g-c3n4 technology, applied in the direction of photovoltaic power generation, photosensitive equipment, electrolytic capacitor manufacturing, etc., to achieve the effect of simple operation, high practical value and application prospect, and simple and easy preparation method

Active Publication Date: 2018-01-23
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] As far as we know, there are no reports on the g-C 3 N 4 Coupling with NiO as a photocathode for hydrogen production reported

Method used

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  • a g‑c <sub>3</sub> no <sub>4</sub> /nio photocathode preparation method
  • a g‑c <sub>3</sub> no <sub>4</sub> /nio photocathode preparation method
  • a g‑c <sub>3</sub> no <sub>4</sub> /nio photocathode preparation method

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Effect test

Embodiment 1

[0031] a g-C 3 N 4 / NiO / FTO photocathode preparation method, its specific steps are:

[0032] (1) Surface pretreatment of FTO conductive glass

[0033] Soak the FTO conductive glass in absolute ethanol and acetone for two hours, and then heat and reflux in 2mol / L potassium hydroxide isopropanol solution for 30min;

[0034] (2) Preparation of NiO / FTO electrode by hydrothermal method

[0035] Put the FTO glass into 0.25mol / LNi(NO 3 ) 2 ·6H 2 O and 0.25mol / L hexamethylenetetramine in a mixed aqueous solution, heated at 100°C for 12min, taken out, washed with deionized water, dried in the air, and calcined in a muffle furnace at 450°C for 2 hours to obtain NiO / FTO electrode;

[0036] (3) Prepare g-C by thermal polymerization 3 N 4 Sensitized NiO composite electrode

[0037] Immerse the NiO / FTO electrode prepared above into a saturated thiourea solution for 4 hours, take it out and dry it in the air, and then place the NiO / FTO electrode adsorbed on thiourea in a tube fur...

Embodiment 2

[0040] Examined g-C 3 N 4 / NiO / FTO photocathode photoelectrochemical performance, and under the same conditions with only a single component of g-C 3 N 4 / FTO, NiO / FTO electrodes were compared.

[0041] image 3 (a) is g-C prepared in embodiment 1 3 N 4 / NiO / FTO electrode UV-vis absorption spectrum, as can be seen from the figure, g-C 3 N 4 Its absorption edge is around 440nm, and its forbidden band width can be calculated by the Tork curve in the illustration, and the intersection point of the extension line of the linear part on the corresponding Tork curve and the abscissa is g-C 3 N 4 The forbidden band width value. In addition, it can also be seen from the figure that the absorption of NiO alone in the visible range is very weak, while g-C 3 N 4 / NiO composite electrode shows a strong absorption capacity in the range of 350-460nm. From the above results, it can be seen that: g-C 3 N 4 The absorption peak of the / NiO composite electrode shifts to a longer wav...

Embodiment 3

[0044] The photoelectrochemical stability of an electrode is crucial to a photoelectric hydrogen production system. Therefore, we investigated the prepared electrode g-C 3 N 4 / NiO / FTO long-term stability.

[0045] With 0.10mol / LNa 2 SO 4 As the electrolyte solution, the Ag / AgCl electrode was used as the reference electrode, and the platinum mesh was used as the counter electrode. The prepared g-C 3 N 4 / NiO / FTO electrode as the working electrode, the electrolyte solution was filled with CH 4 / N 2 The mixed gas is degassed to remove the O 2 , and then measured its electrochemical stability with a CHI600E electrochemical instrument.

[0046] Figure 4 (a) and (b) represent g-C respectively 3 N 4 / NiO / FTO electrode using CH 4 / N 2 A plot of current versus time in saturated versus air-saturated electrolyte solutions. It can be seen from the figure that the current of our electrode can maintain long-term stability (10h) under these two conditions. It is worth noting ...

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Abstract

The invention discloses a novel and stable g-C3N4 / NiO photoelectric hydrogen production electrode preparation method, and belongs to the technical field of inorganic chemistry and photoelectrocatalysis. The g-C3N4 light absorber is nonmetal and is made of nontoxic and easily available materials. The preparation method solves the problem that in the prior art, usually a toxic cadmium metal chalcogenide as the light absorber, and utilizes the g-C3N4 as the photoelectric cathode light absorption agent and cocatalyst for the first time. The preparation method includes: 1 taking FTO electro-conductive glass as the substrate and using a hydrothermal method to prepare ordered NiO films; and 2 immersing the NiO / FTO electrode obtained by the last step in the saturated thiourea solution for 4h, and then placing the NiO / FTO electrode in a muffle furnace for calcining for 2h by 500DEG C, and then taking out and obtaining the g-C3N4 / NiO / FTO electrode. The preparation method is simple and easy to operate and is good for large-scale application.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photocatalytic decomposition of water to produce hydrogen, and relates to a preparation method of a novel photocathode. Background technique [0002] Over the past few decades, energy and environmental issues have become one of the most important and popular topics on a global scale. As an environmentally friendly fuel, hydrogen has a high calorific value compared to fossil fuels, almost four times higher than methane. Hydrogen production from water splitting has attracted considerable attention due to the possibility of producing a clean energy carrier without carbon dioxide production and is an opportunity in the field of energy storage. One of the most efficient ways to produce hydrogen is photoelectric water splitting to produce hydrogen, which can capture and store solar energy in the simplest chemical bonds without any pollutants. In general, a photoelectric water splitting device co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/042H01G9/20
CPCH01G9/0029H01G9/0425H01G9/20H01G9/2027Y02E10/542
Inventor 董玉明陈艳美王光丽蒋平平赵辉
Owner JIANGNAN UNIV
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