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High-orientation antimony selenide thin film and preparation method therefor

An antimony selenide, highly oriented technology, used in climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of complexity, no significant change in performance, and the inability of antimony selenide films to have orientation, etc. Achieve the effect of increased efficiency, improved current density and fill factor

Active Publication Date: 2016-11-16
WUHAN IND INST FOR OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of the technical solution of this patent document 1 are: its battery structure is very complicated, the role of antimony selenide in it is not clear and its performance has not changed significantly
However, the problem in the technical solution of this patent document 2 is: this method is a post-processing method, which is more complicated than the method for preparing antimony selenide in this paper, and the antimony selenide thin film prepared by this method cannot have the favorable Orientation

Method used

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  • High-orientation antimony selenide thin film and preparation method therefor
  • High-orientation antimony selenide thin film and preparation method therefor
  • High-orientation antimony selenide thin film and preparation method therefor

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Embodiment

[0032] Step 1. Clean the transparent conductive FTO glass with deionized water, acetone, isopropanol, and deionized water for 30 minutes each, and then dry it with a nitrogen gun;

[0033] Step 2. Deposit a 300nm metal antimony thin film by thermal evaporation, the evaporation source temperature is 500-600°C, the substrate heating temperature is normal temperature, and the evaporation time is 20 minutes;

[0034] Step 3: Use a quartz cover and 50 mg of selenium particles to anneal for 16 minutes in a glove box, and then open the cover to obtain a well-oriented antimony selenide thin film.

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Abstract

The invention belongs to the preparation fields of a photoelectric material and a thin film solar cell, and discloses a high-orientation antimony selenide thin film and a preparation method therefor, particularly an antimony selenide thin film with high orientation. The high-orientation antimony selenide thin film is a one-dimensional chain-like material; the high orientation refers to the thin film formed by the antimony selenide chin which is grown in a direction of <002>. The preparation method specifically comprises two steps of adopting a thermal evaporation method or other methods to prepare the antimony selenide thin film, and then performing a method for carrying out selenylation (sulfuration) processing. By adoption of the preparation method provided by the invention, the high-orientation antimony selenide thin film can be obtained; a more efficient antimony selenide thin film solar cell is expected to be obtained; and in addition, the preparation method is simple and feasible, and low in cost.

Description

technical field [0001] The invention belongs to the field of preparation of photoelectric materials and thin-film solar cells, and in particular relates to a highly oriented antimony selenide thin film and a preparation method thereof. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ) is a very potential thin-film photovoltaic absorber material, it has a suitable band gap of 1~1.2eV, a large absorption coefficient (short-wave absorption coefficient>10 5 cm -1 ), the raw materials are non-toxic and abundant, but it was not until recent years that antimony selenide thin film solar cells began to be recorded and reported in international literature. [0003] Antimony selenide is a special ribbon material, so its mobility in each direction is significantly different, and the mobility determines the diffusion length and thus affects the current. Solar cell efficiency N=Voc*Jsc*FF, where Jsc is the current density, which is one of the important factors affecting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18H01L31/0445
CPCH01L31/032H01L31/0445H01L31/18Y02E10/50Y02P70/50
Inventor 唐江冷美英何一粟
Owner WUHAN IND INST FOR OPTOELECTRONICS
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