Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-orientation antimony selenide thin film and preparation method therefor

An antimony selenide, highly oriented technology, used in climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of complexity, no significant change in performance, and the inability of antimony selenide films to have orientation, etc. Achieve the effect of increased efficiency, improved current density and fill factor

Active Publication Date: 2016-11-16
WUHAN IND INST FOR OPTOELECTRONICS
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of the technical solution of this patent document 1 are: its battery structure is very complicated, the role of antimony selenide in it is not clear and its performance has not changed significantly
However, the problem in the technical solution of this patent document 2 is: this method is a post-processing method, which is more complicated than the method for preparing antimony selenide in this paper, and the antimony selenide thin film prepared by this method cannot have the favorable Orientation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-orientation antimony selenide thin film and preparation method therefor
  • High-orientation antimony selenide thin film and preparation method therefor
  • High-orientation antimony selenide thin film and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0032] Step 1. Clean the transparent conductive FTO glass with deionized water, acetone, isopropanol, and deionized water for 30 minutes each, and then dry it with a nitrogen gun;

[0033] Step 2. Deposit a 300nm metal antimony thin film by thermal evaporation, the evaporation source temperature is 500-600°C, the substrate heating temperature is normal temperature, and the evaporation time is 20 minutes;

[0034] Step 3: Use a quartz cover and 50 mg of selenium particles to anneal for 16 minutes in a glove box, and then open the cover to obtain a well-oriented antimony selenide thin film.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the preparation fields of a photoelectric material and a thin film solar cell, and discloses a high-orientation antimony selenide thin film and a preparation method therefor, particularly an antimony selenide thin film with high orientation. The high-orientation antimony selenide thin film is a one-dimensional chain-like material; the high orientation refers to the thin film formed by the antimony selenide chin which is grown in a direction of <002>. The preparation method specifically comprises two steps of adopting a thermal evaporation method or other methods to prepare the antimony selenide thin film, and then performing a method for carrying out selenylation (sulfuration) processing. By adoption of the preparation method provided by the invention, the high-orientation antimony selenide thin film can be obtained; a more efficient antimony selenide thin film solar cell is expected to be obtained; and in addition, the preparation method is simple and feasible, and low in cost.

Description

technical field [0001] The invention belongs to the field of preparation of photoelectric materials and thin-film solar cells, and in particular relates to a highly oriented antimony selenide thin film and a preparation method thereof. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ) is a very potential thin-film photovoltaic absorber material, it has a suitable band gap of 1~1.2eV, a large absorption coefficient (short-wave absorption coefficient>10 5 cm -1 ), the raw materials are non-toxic and abundant, but it was not until recent years that antimony selenide thin film solar cells began to be recorded and reported in international literature. [0003] Antimony selenide is a special ribbon material, so its mobility in each direction is significantly different, and the mobility determines the diffusion length and thus affects the current. Solar cell efficiency N=Voc*Jsc*FF, where Jsc is the current density, which is one of the important factors affecting...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18H01L31/0445
CPCH01L31/032H01L31/0445H01L31/18Y02E10/50Y02P70/50
Inventor 唐江冷美英何一粟
Owner WUHAN IND INST FOR OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com