Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ba3Zr2S7 film and preparation method and application thereof

A technology of ba3zr2s7 and thin films, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, zirconium compounds, etc., can solve the problems of poor stability of perovskite thin films, polluted environment, unsuitable bandgap width, etc., and achieve excellent stability, Excellent photoelectric performance, not easy to oxidize and decompose

Pending Publication Date: 2022-08-09
ZHENGZHOU UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the technical problems of poor stability, polluted environment and unsuitable bandgap width of the current perovskite film, the present invention proposes a Ba 3 Zr 2 S 7 The thin film and its preparation method and application, the prepared sulfide perovskite thin film achieves the goals of high stability, environmental friendliness, and suitable bandgap width, and has good application prospects in the field of photovoltaic cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ba3Zr2S7 film and preparation method and application thereof
  • Ba3Zr2S7 film and preparation method and application thereof
  • Ba3Zr2S7 film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] a Ba 3 Zr 2 S 7 The preparation method of the film includes the following steps:

[0040] (1) BaZrS 3 Preparation of target material:

[0041] S1. Take BaCO 3 and ZrO 2 In order to react the raw material powder, it is prepared according to the substance ratio of 1:1, and it is subjected to vulcanization reaction to generate BaZrS 3 powder, and made into a target, the vulcanization reaction equation is 2BaCO 3 +2ZrO 2 +3CS 2 =2BaZrS 3 +10CO 2 , its high temperature vulcanization device such as figure 1 As shown, it includes a carbon disulfide supply device, a flow control device, a high temperature furnace, and a vacuum device, and the above devices are connected by a gas valve. The specific steps are as follows:

[0042] S11. Take BaCO 3 and ZrO 2 In order to react the raw material powder, put it into a high temperature reaction furnace, turn on the vacuum equipment, and pump the high temperature reaction furnace to the background vacuum, so that the vacu...

Embodiment 2

[0061] a Ba 3 Zr 2 S 7 The preparation method of the film includes the following steps:

[0062] (1) BaZrS 3 Preparation of target material:

[0063] S11. Weighing BaCO 3 and ZrO 2 The powder is prepared according to the substance ratio of 1:1. After fully grinding and mixing evenly, it is placed in a high-temperature reaction furnace, and the vacuum device is turned on for air extraction, and the high-temperature reaction furnace is pumped to the background vacuum to make the vacuum degree < 0.1Pa.

[0064] S12. Turn on the gas flow control device to make CS 2 The steam enters into the high temperature reaction furnace in step S11, and its flow rate is set to 30 SCCM.

[0065] S13. Set and execute a temperature program for the high-temperature reaction furnace in step S11, and control the vacuum pump to make the air pressure in the high-temperature reaction furnace 30Pa, gradually heat it up to 1000°C, and keep it for 1 hour, then cool to room temperature, and close t...

Embodiment 3

[0077] a Ba 3 Zr 2 S 7 The preparation method of the film includes the following steps:

[0078] (1) BaZrS 3 Preparation of target material:

[0079] S11. Weighing BaCO 3 and ZrO 2 The powder is prepared according to the substance ratio of 1:1. After fully grinding and mixing evenly, it is placed in a high-temperature reaction furnace, and the vacuum device is turned on for air extraction, and the high-temperature reaction furnace is pumped to the background vacuum to make the vacuum degree < 0.1Pa.

[0080] S12. Turn on the gas flow control device to make CS 2 The steam enters into the high temperature reaction furnace in step S11, and its flow rate is set to 30 SCCM.

[0081] S13. Set and execute a temperature program for the high-temperature reaction furnace in step S11, and control the vacuum pump to make the air pressure in the high-temperature reaction furnace 20Pa, gradually heat it up to 1050°C, and keep it for 1 hour, then cool to room temperature, and close t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a Ba3Zr2S7 thin film and a preparation method and application thereof, and is used for solving the technical problems of poor stability, environment pollution and uncomfortable forbidden bandwidth of the current perovskite thin film, the preparation method comprises the following steps: carrying out vulcanization reaction on BaCO3 and ZrO2 raw material powder to generate BaZrS3 powder, and preparing the BaZrS3 powder into a BaZrS3 target material; the preparation method comprises the following steps: carrying out vulcanization reaction on BaSO4 raw material powder to generate BaS powder, and preparing the BaS powder into a BaS target material; carrying out sputter coating on the two target materials to prepare a precursor film; and the precursor film is subjected to recrystallization treatment, and the Ba3Zr2S7 film is prepared. The Ba3Zr2S7 thin film which does not contain lead and is environmentally friendly, stable in performance and excellent in photoelectric property is obtained; the optical forbidden band width of the material is 1.5 eV, and the material has a good application prospect in the field of photovoltaic cells.

Description

technical field [0001] The invention belongs to the technical field of novel semiconductor materials, and in particular relates to a Ba 3 Zr 2 S 7 Thin films and methods of making and using the same. Background technique [0002] In contemporary society, realizing the effective utilization of clean solar energy is the goal that human beings are striving for. In recent years, benefiting from the advantages of high efficiency and low-temperature solution preparation, organic or inorganic hybrid lead-halide perovskite solar cells have achieved rapid development, and their efficiency has exceeded 25%. [0003] However, the instability of organic or inorganic hybrid lead halide perovskites and the presence of lead, a biotoxic element, are two major problems that cannot be ignored, which have become difficult problems limiting their large-scale commercial applications. There is still a lack of a method to prepare stable and environmentally friendly perovskite films with suitab...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G25/00H01L51/42C23C14/35C23C14/06C23C14/58
CPCC01G25/006C23C14/352C23C14/3414C23C14/0623C23C14/5806C01P2002/72C01P2004/03C01P2002/85H10K30/00Y02E10/549
Inventor 韩炎兵史志锋毛子慧刘伟杰徐洁
Owner ZHENGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com