21 results about "Tellurium compounds" patented technology

Methods for preparing catalysts for oxidative dehydrogenation (ODH) of alkanes such as ethane are provided. An exemplary method includes forming a slurry including metal oxides; one or more of a bismuth compound, an antimony compound, and a tellurium compound; a reducing agent; and water; and heating the slurry to form the catalyst. The metal oxides include an oxide of molybdenum and an oxide of vanadium. The bismuth compound includes bismuth oxide, bismuth hydroxide, or a bismuth carbonate. The antimony compound includes an oxide of antimony, an antimony acetate, or an antimony ethoxide. The tellurium compound includes tellurium dioxide. The reducing agent includes molybdenum dioxide and may further include vanadium dioxide. The methods use all inorganic reagents, with no build up COx pressure observed during the hydrothermal synthesis.

This invention relates to a method for preparing high-density one-dimensional selenium-doped copper telluride chains, belonging to the field of nanomaterials technology. The method involves preparing a copper single-crystal substrate; evaporating and depositing tellurium powder onto the copper single-crystal substrate to obtain the substrate and a copper tellurium compound deposited on the substrate, controlling the temperature of the copper tellurium compound and the copper single-crystal substrate at 25–30°C during the deposition process; subjecting the substrate and the deposited copper tellurium compound to a first heating and holding treatment at the growth temperature; then evaporating and depositing selenium powder onto the substrate and the copper tellurium deposit to obtain a selenium-doped copper telluride deposit and the substrate, controlling the temperature of the substrate and the deposit at 25–30°C during the deposition process; and subjecting the obtained selenium-doped copper telluride deposit and the substrate to a second heating and holding treatment at the growth temperature to obtain high-density one-dimensional selenium-doped copper telluride chains. The one-dimensional selenium-doped copper telluride chains prepared by this invention have a width of less than 1 nanometer, a length of more than 50 nanometers, and all chains are uniformly oriented.

The invention relates to the technical field of high polymer materials and biomedical materials, in particular to a nanoparticle construction method based on an amphiphilic block copolymer. The amphiphilic block copolymer composed of a hydrophobic fluorine-containing chain segment and a hydrophilic amino chain segment is synthesized by adopting an organic tellurium compound mediated free radical polymerization method, and in the preparation process, on the premise that monodispersity is guaranteed, quantitative conversion of the two monomers can be almost achieved, the atom utilization rate is high, and the purpose of green chemistry is achieved; the monomer can be quantitatively converted, the nanoparticles with different particle sizes are designed by changing the feeding ratio, the amide groups on the outer sides of the nanoparticles are neutral in water, the in-vivo tolerance is good, and the nanoparticles can have acid-base responsiveness at the same time; fluorine atoms which are not easy to appear in a living body are contained in the nano particles, so that a good contrast effect is achieved. The method is simple and convenient in process, adjustable in structure and suitable for constructing an intelligent polymer drug delivery system, and has a good application prospect.

A tellurium-containing compound represented by any one of formulas (1) to (4): R 1 represents an unsubstituted alkyl group having 2 to 6 carbon atoms, R 2 and R 3 each independently represents a hydrogen atom, or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, Ar represents a substituted or unsubstituted aryl group having 5 to 18 atoms constituting an aromatic ring, R f represents a perfluoroalkyl group having 1 to 12 carbon atoms, A represents a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, or a substituted or unsubstituted aryl group having 5 to 18 atoms constituting an aromatic ring, X represents a hydrogen atom, a fluorine atom, a CF2-Z group or a CHF-Z group, Y represents a CF2-Z group or a CHF-Z group, and Z represents a fluorine atom or an organic group having 1 to 12 carbon atoms.

The invention relates to the technical field of green resource recovery, in particular to a green and efficient tellurium extraction method and system for a tellurium-containing material. The method comprises the following steps: S1, pretreating and enriching: carrying out thermal activation treatment on a tellurium-containing material to convert a tellurium compound in the tellurium-containing material into a gaseous state or a volatile state, and obtaining a high-grade tellurium enriched product in a condensation trapping manner; s2, selective dissolution and separation: carrying out leaching treatment on the tellurium enrichment obtained in the step S1 under mild conditions by adopting a deep eutectic solvent with high selectivity and dissolving capacity on a target tellurium compound to realize efficient selective dissolution of tellurium so as to obtain a tellurium-containing organic functional solvent solution; and S3, tellurium product precipitation and solvent regeneration: introducing an anti-solvent into the organic functional solvent solution obtained in the step S2, so that tellurium is selectively precipitated in a solid compound form, and the tellurium product is obtained after separation. According to the invention, high-selectivity dissolution of the tellurium compound is realized.

The application belongs to the field of sputtering target material preparation, and discloses a preparation method of a tellurium compound rotating target material. The method comprises the following steps: (1) loading tellurium compound powder into a mold, and sequentially performing cold pressing and vacuum heating reaction in a vacuum hot pressing furnace to obtain a tellurium compound ingot; (2) using a processing machine tool to perform hole digging processing on the tellurium compound ingot obtained in step (1) to obtain a rotating target material cylinder, and binding the rotating target material cylinder section by section on a back pipe, so that the tellurium compound rotating target material is obtained after cleaning and drying. The application adopts a vacuum hot pressing method, first presses out a material ingot, and then performs pollution-free processing according to the size, so that the processed material can be continuously utilized, the cost is greatly saved, and the production efficiency is high.

This invention belongs to the field of nuclear reactor target safety design, specifically relating to a method and system for calculating the internal pressure of a target based on the amount of tellurium compound. The method first determines the required core data; based on the mass and density of the tellurium compound, the effective volume of iodine vapor inside the target is calculated, where the effective volume is the internal volume of the target minus the volume occupied by the tellurium compound; based on the mass of the tellurium compound, the tellurium element mass fraction, and the number of iodine molecules generated per unit mass of tellurium element, the total amount of iodine vapor is calculated; based on the ideal gas law, the internal pressure of the target is calculated using the total amount of vapor, the gas constant, the operating temperature, and the effective volume. This invention establishes a dynamic correlation between the amount of tellurium compound and the effective volume, clarifies the mass conversion relationship between Te and the tellurium compound, and constructs a high-precision I-131 target internal pressure calculation model, possessing significant engineering application value and theoretical innovation significance.

This invention relates to a terahertz transparent electrode based on a nickel-tellurium compound, its preparation method, and its application, belonging to the field of terahertz electrode technology. To address the problem that existing terahertz transparent electrodes cannot simultaneously achieve high transmittance and good conductivity in the terahertz wave propagation direction, this invention provides a terahertz transparent electrode based on a nickel-tellurium compound, comprising a substrate and a nickel-tellurium compound thin film. This invention prepares nickel-tellurium compound thin films with different nickel-tellurium ratios by setting targets with different nickel-tellurium areas, achieving adjustment of the conductivity, transmittance, and thickness of the terahertz transparent electrode. This balances high transmittance and high conductivity in the terahertz band, resulting in a nickel-tellurium compound-based terahertz transparent electrode with a transmittance exceeding 80% and a conductivity greater than 1000 S / cm in the terahertz band, meeting the qualification standards for transparent conductive thin films. The preparation method of this invention has low requirements and is suitable for practical mass production of terahertz transparent electrodes.

This invention belongs to the field of optical absorber technology, specifically relating to a broadband reconfigurable metasurface perfect absorber for mid-wave infrared applications. The absorber comprises, in the thickness direction, a metal substrate layer, a dielectric layer, a metasurface structure, and a protective layer. The metasurface structure is composed of a periodic array of multiple unit structures, with adjacent unit structures having different outer diameters. Each unit structure is made of indium antimony tellurium compound, and the composition of the indium antimony tellurium compound is In. x Sb y Te z , of which 2.5

Methods for preparing catalysts for oxidative dehydrogenation (ODH) of alkanes such as ethane are provided An exemplary method includes providing a first mixture including metal oxides; a reducing agent; and one or more of a bismuth compound, an antimony compound, and a tellurium compound; and heating the first mixture to form the catalyst. The first mixture is essentially free of water. The metal oxides include an oxide of molybdenum and an oxide of vanadium. The bismuth compound includes bismuth oxide, bismuth hydroxide, or a bismuth carbonate. The antimony compound includes an oxide of antimony, antimony acetate, or antimony ethoxide. The tellurium compound includes tellurium dioxide.

The application discloses a low-loss hetero-junction semiconductor material based on antimony tellurium compound and preparation and application thereof, and relates to the following steps: irradiating a stable hexagonal phase Sb2Te3 crystal sample with a high-energy particle beam, so that the bulk phase inside the sample is converted into a cubic phase, and the hexagonal phase structure of a region from the surface to the inside of the sample to 10 nm is kept unchanged; the stable hexagonal phase Sb2Te3 bulk phase inside structure is converted into a cubic phase; and the Anderson insulating property of the bulk phase inside makes the charges be subjected to Anderson localization, and the charges are converted into an insulating state. The application converts the bulk phase inside of the topological insulator hexagonal phase Sb2Te3 crystal into a cubic phase by irradiating the bulk phase inside with a high-energy particle beam, forms charge Anderson localization in the bulk phase, converts the bulk phase into an insulating state, keeps the hexagonal phase topological insulating property in the range from the surface to the inside of the sample to 10 nm, can inhibit the electric transport performance of the bulk phase inside, drives the current to pass through only the surface, thereby reducing the transport loss, and realizes super-low power consumption transport.

The invention relates to the technical field of functional polymer materials and surface engineering, in particular to a fluorine-free silicon-containing anti-icing coating preparation method based on organic tellurium compound regulation, which comprises the following steps: mixing a silicon-containing monomer and a polar monomer, and uniformly stirring at room temperature to form a precursor solution; adding an organic azo compound and an organic tellurium compound into the precursor solution in an inert atmosphere, reacting, purifying and drying to obtain a silicon-containing copolymer; dissolving the obtained silicon-containing copolymer in a solvent, and then adding a cross-linking agent to prepare a coating solution; and uniformly coating the surface of a base material with the coating liquid, and drying to form the fluoride-free silicon-containing anti-icing coating. The invention also provides the fluoride-free silicon-containing anti-icing coating obtained by the method, the surface water contact angle is greater than 100 degrees, and the ice adhesion strength is less than 50 kPa. The process is simple and convenient, the components are green and environment-friendly, and the prepared fluoride-free silicon-containing anti-icing coating material is suitable for icing protection in complex environments such as wind power blades, aerospace components and power lines.

The alkaline battery of the present invention includes, as power generation components, a positive electrode containing silver oxide as a positive electrode active material, a negative electrode, a separator, and an alkaline electrolyte solution. At least one of the power generation components contains tellurium or a compound of tellurium. The total content of tellurium element contained in components housed in the battery is 0.4 parts by mass or more with respect to 100 parts by mass of the total amount of silver element in the positive electrode active material. The positive electrode is substantially free of cadmium.

The invention discloses a material treatment method for radiopharmaceutical preparation. The material treatment method comprises the following steps: dissolving an irradiated tellurium dioxide target material in a sodium hydroxide solution to generate a sodium tellurite solution; adding hydrogen peroxide and a composite-phase molybdenum carbide catalyst into the solution, and adjusting the pH to an acidic condition to promote the tellurite radical to be preferentially converted into a high-valence tellurium compound; the method comprises the following steps: cooling I-containing iodine vapor through nitrogen-assisted distillation, and introducing the cooled I-containing iodine vapor into an alkaline NaOH solution for capturing; a composite-phase molybdenum carbide catalyst is adopted, the ratio of alpha-MoC to beta-MoC is regulated and controlled, and TiO deposition modification on the surface of beta-MoC is combined, so that the activity, stability and selectivity of the catalyst are remarkably improved; experiments show that the method enables the yield of iodine-131 to reach 92.76%, the purity to reach 99.65% and the content of by-products to be reduced to 0.12%; the contrast experiment further verifies the influence of the catalyst dosage, the phase composition and the distillation condition on the result, and verifies that efficient and high-purity iodine-131 preparation is realized through the catalytic synergistic effect and the surface functionalization design.

The application discloses an optical phase change storage material based on arsenic tellurium compound, a device and a preparation method thereof, which comprises arsenic (As) elements and tellurium (Te) elements, and the chemical formula of the phase change material is As x Te y , wherein 1

The present application relates to the field of functional polymer materials and surface engineering technology, and particularly relates to a fluorine-free silicon-containing anti-icing coating preparation method based on organic tellurium compound regulation, which comprises the following steps: mixing a silicon-containing monomer and a polar monomer, stirring uniformly at room temperature to form a precursor solution; adding an organic azo compound and an organic tellurium compound to the precursor solution under an inert atmosphere, and then performing reaction, purification and drying to obtain a silicon-containing copolymer; dissolving the obtained silicon-containing copolymer in a solvent, adding a crosslinking agent to prepare a coating solution; uniformly coating the coating solution on the surface of a substrate, and drying to form a fluorine-free silicon-containing anti-icing coating. The present application also provides the fluorine-free silicon-containing anti-icing coating obtained by the method, which has a surface water contact angle greater than 100° and an ice adhesion strength less than 50 kPa. The present application has a simple process, green and environmentally-friendly components, and the prepared fluorine-free silicon-containing anti-icing coating material is suitable for icing protection under complex environments such as wind power blades, aerospace components and power lines.

The application discloses a lanthanum-niobium tellurium compound and a lanthanum-niobium tellurium nonlinear optical crystal as well as a preparation method and application thereof. The chemical formula of the crystal is LaNbTe2O8, the crystal is a non-centrosymmetric structure, belongs to an orthorhombic system, a space group is Abm2, cell parameters are alpha=90 degrees, beta=90 degrees, gamma=90 degrees, and Z=4. The nonlinear optical crystal has a high damage threshold, a large nonlinear optical effect, a wide transmission range, a frequency doubling effect equivalent to KTP, and stable physical and chemical properties of the crystal, and is easy to cut, polish, process and preserve.

The present invention relates, among other things, to a dispersed electrolyte for the electrochemical deposition of particle-containing nickel or particle-containing nickel alloy layers. The dispersed electrolyte includes: 2 to 200 g / L of nickel ions; a total of 1 to 200 g / L of at least one particle selected from the group consisting of inorganic piezoelectric particles, conductive ceramic particles, and combinations thereof; an anionic and / or nonionic dispersant; and water. In the case of nickel alloys, the dispersed electrolyte comprises: ions of at least one other metal selected from the group consisting of transition metals, noble metals and combinations thereof, the total concentration of the ions of the other metals being at most 40 g / L; and / or at least one non-metallic compound selected from the group consisting of phosphorus compounds, sulfur compounds, selenium compounds, tellurium compounds, carbon compounds and combinations thereof, the total concentration of said non-metallic compounds being at most 50 g / L. The pH value is 2.0 to 7.0. With a dispersed electrolyte, a particle-containing nickel or nickel alloy layer may be deposited by an electrochemical process onto a metal or metallized substrate.

Provided are: a tellurium-containing compound represented by formula (M1); a polymer of a tellurium-containing compound represented by any one of formulae (M1) to (M3); and a method for producing the polymer. X1 to X3, Y1 to Y3 and Z1 to Z3 each independently denote a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or an organic group having 1-20 carbon atoms. At least one of X1, Y1 and Z1 is a fluorine atom. At least one of X2, Y2 and Z2 is a chlorine atom, a perfluoroalkyl group, a monovalent hydrocarbon group having an oxyperfluoroalkylene structure, or a phenyl group. R1 to R3 each denote an organic group having 1-20 carbon atoms.

The present application relates to a kind of tellurium / carbon nitride p-n heterojunction photocatalyst and its preparation method and application, preparation method includes the following steps: S1, tellurium compound and carbon-nitrogen compound are dispersed in deionized water, after ultrasonic mixing sufficiently, precursor homogeneous solution is obtained;S2, precursor homogeneous solution obtained in step S1 is carried out hydrothermal reaction, cooling, centrifugal, washing, drying after obtaining supramolecular intermediate;S3, supramolecular intermediate obtained in step S2 is calcined with gas, and after grinding, tellurium / carbon nitride p-n heterojunction composite photocatalyst powder is obtained.Compared with prior art, the tellurium / carbon nitride p-n heterojunction photocatalyst prepared in the present application realizes the accelerated migration of tellurium conduction band photo-generated electrons to carbon nitride conduction band, and the accelerated migration of carbon nitride valence band photo-generated holes to tellurium valence band, inhibits the recombination of carrier, improves charge separation and migration efficiency, so as to enhance photocatalytic activity.