51 results about "Tellurium compounds" patented technology

The invention relates to a terahertz transparent electrode based on a nickel tellurium compound and a preparation method and application thereof, and belongs to the technical field of terahertz electrodes. In order to solve the problem that an existing terahertz transparent electrode cannot have high transmittance and good conductivity in the terahertz wave propagation direction at the same time, the invention provides a terahertz transparent electrode based on a nickel-tellurium compound, which comprises a substrate and a nickel-tellurium compound film. The nickel-tellurium compound films with different nickel-tellurium ratios are prepared by setting the target materials with different nickel-tellurium areas, so that the conductivity, transmittance and thickness of the terahertz transparent electrode are adjusted, and the relatively high transmittance and high conductivity of the terahertz wave band of the terahertz transparent electrode are balanced; the transmittance of the obtained terahertz transparent electrode based on the nickel tellurium compound in the terahertz wave band is higher than 80%, the conductivity is larger than 1000 S / cm, and the qualified standard of a transparent conductive film is met. The preparation method is low in requirement and suitable for practical batch production of the terahertz transparent electrode.

Methods for preparing catalysts for oxidative dehydrogenation (ODH) of alkanes such as ethane are provided. An exemplary method includes forming a slurry including metal oxides; one or more of a bismuth compound, an antimony compound, and a tellurium compound; a reducing agent; and water; and heating the slurry to form the catalyst. The metal oxides include an oxide of molybdenum and an oxide of vanadium. The bismuth compound includes bismuth oxide, bismuth hydroxide, or a bismuth carbonate. The antimony compound includes an oxide of antimony, an antimony acetate, or an antimony ethoxide. The tellurium compound includes tellurium dioxide. The reducing agent includes molybdenum dioxide and may further include vanadium dioxide. The methods use all inorganic reagents, with no build up COx pressure observed during the hydrothermal synthesis.

This invention relates to a method for preparing high-density one-dimensional selenium-doped copper telluride chains, belonging to the field of nanomaterials technology. The method involves preparing a copper single-crystal substrate; evaporating and depositing tellurium powder onto the copper single-crystal substrate to obtain the substrate and a copper tellurium compound deposited on the substrate, controlling the temperature of the copper tellurium compound and the copper single-crystal substrate at 25–30°C during the deposition process; subjecting the substrate and the deposited copper tellurium compound to a first heating and holding treatment at the growth temperature; then evaporating and depositing selenium powder onto the substrate and the copper tellurium deposit to obtain a selenium-doped copper telluride deposit and the substrate, controlling the temperature of the substrate and the deposit at 25–30°C during the deposition process; and subjecting the obtained selenium-doped copper telluride deposit and the substrate to a second heating and holding treatment at the growth temperature to obtain high-density one-dimensional selenium-doped copper telluride chains. The one-dimensional selenium-doped copper telluride chains prepared by this invention have a width of less than 1 nanometer, a length of more than 50 nanometers, and all chains are uniformly oriented.

The invention relates to the technical field of high polymer materials and biomedical materials, in particular to a nanoparticle construction method based on an amphiphilic block copolymer. The amphiphilic block copolymer composed of a hydrophobic fluorine-containing chain segment and a hydrophilic amino chain segment is synthesized by adopting an organic tellurium compound mediated free radical polymerization method, and in the preparation process, on the premise that monodispersity is guaranteed, quantitative conversion of the two monomers can be almost achieved, the atom utilization rate is high, and the purpose of green chemistry is achieved; the monomer can be quantitatively converted, the nanoparticles with different particle sizes are designed by changing the feeding ratio, the amide groups on the outer sides of the nanoparticles are neutral in water, the in-vivo tolerance is good, and the nanoparticles can have acid-base responsiveness at the same time; fluorine atoms which are not easy to appear in a living body are contained in the nano particles, so that a good contrast effect is achieved. The method is simple and convenient in process, adjustable in structure and suitable for constructing an intelligent polymer drug delivery system, and has a good application prospect.

Provided is a composition containing a quantum dot (A) and a vinyl copolymer (B), wherein the vinyl copolymer (B) has a structural unit derived from (meth)acrylic acid, a structural unit derived from (meth)acrylate having a carboxy group, and a structural unit derived from (meth)acrylate having no carboxy group; contains a tellurium compound; has a molecular weight distribution of 2.0 or less; and has an acid value of 100 mgKOH / g to 150 mgKOH / g.

A tellurium-containing compound represented by any one of formulas (1) to (4): R 1 represents an unsubstituted alkyl group having 2 to 6 carbon atoms, R 2 and R 3 each independently represents a hydrogen atom, or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, Ar represents a substituted or unsubstituted aryl group having 5 to 18 atoms constituting an aromatic ring, R f represents a perfluoroalkyl group having 1 to 12 carbon atoms, A represents a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, or a substituted or unsubstituted aryl group having 5 to 18 atoms constituting an aromatic ring, X represents a hydrogen atom, a fluorine atom, a CF2-Z group or a CHF-Z group, Y represents a CF2-Z group or a CHF-Z group, and Z represents a fluorine atom or an organic group having 1 to 12 carbon atoms.

The invention relates to, among others, a dispersion electrolyte for galvanically depositing particle-containing nickel or nickel alloy layers. The dispersion electrolyte comprises 2 to 200 g / L of nickel ions, in total 1 to 200 g / L of at least one type of particle, selected from inorganic piezoelectric particles, electrically conductive ceramic particles, and combinations thereof, an anionic and / or non-ionic dispersant, and water. In the case of a nickel alloy, the dispersion electrolyte contains ions of at least one other metal, selected from transition metals, noble metals, and combinations thereof, in a total concentration of up to 40 g / L and / or at least one non-metal compound, selected from phosphor compounds, sulfur compounds, selenium compounds, tellurium compounds, carbon compounds, and combinations thereof, in a total concentration of up to 50 g / L. The pH value equals 2.0 to 7.0. By virtue of the dispersion electrolyte, a particle-containing nickel or nickel alloy layer can be galvanically deposited onto a metal or metallized substrate.

The invention belongs to the technical field of photocatalytic material preparation, and discloses a method for preparing a Bi2TeO5 material by a hydrothermal method, which comprises the following steps: S1, mixing a tellurium-containing compound solution and a bismuth-containing compound solution to obtain a mixed solution, and then adding a strong alkali solution to adjust the pH value of the mixed solution to 8-14; s2, carrying out a hydrothermal reaction on the mixed solution after the pH value is adjusted, and cooling to room temperature after the hydrothermal reaction is finished; and S3, alternately washing the obtained product with water and ethanol, carrying out suction filtration, and drying to obtain the Bi2TeO5 material. The hydrothermal synthesis method for preparing the Bi2TeO5 material, provided by the invention, is mild in preparation process, simple and feasible, high in cost benefit, green, environment-friendly and pollution-free, and large-scale preparation of the Bi2TeO5 material can be realized; the prepared Bi2TeO5 material has high efficiency in application scenes of hydrogen production, pollutant degradation and the like, and shows excellent photocatalytic performance.

The invention relates to the technical field of green resource recovery, in particular to a green and efficient tellurium extraction method and system for a tellurium-containing material. The method comprises the following steps: S1, pretreating and enriching: carrying out thermal activation treatment on a tellurium-containing material to convert a tellurium compound in the tellurium-containing material into a gaseous state or a volatile state, and obtaining a high-grade tellurium enriched product in a condensation trapping manner; s2, selective dissolution and separation: carrying out leaching treatment on the tellurium enrichment obtained in the step S1 under mild conditions by adopting a deep eutectic solvent with high selectivity and dissolving capacity on a target tellurium compound to realize efficient selective dissolution of tellurium so as to obtain a tellurium-containing organic functional solvent solution; and S3, tellurium product precipitation and solvent regeneration: introducing an anti-solvent into the organic functional solvent solution obtained in the step S2, so that tellurium is selectively precipitated in a solid compound form, and the tellurium product is obtained after separation. According to the invention, high-selectivity dissolution of the tellurium compound is realized.

The application belongs to the field of sputtering target material preparation, and discloses a preparation method of a tellurium compound rotating target material. The method comprises the following steps: (1) loading tellurium compound powder into a mold, and sequentially performing cold pressing and vacuum heating reaction in a vacuum hot pressing furnace to obtain a tellurium compound ingot; (2) using a processing machine tool to perform hole digging processing on the tellurium compound ingot obtained in step (1) to obtain a rotating target material cylinder, and binding the rotating target material cylinder section by section on a back pipe, so that the tellurium compound rotating target material is obtained after cleaning and drying. The application adopts a vacuum hot pressing method, first presses out a material ingot, and then performs pollution-free processing according to the size, so that the processed material can be continuously utilized, the cost is greatly saved, and the production efficiency is high.

The invention relates, inter alia, to a dispersion electrolyte for the electroplating of particle-containing nickel or nickel alloy layers. The dispersion electrolyte comprises 2 to 200 g / L nickel ions, a total of 1 to 200 g / L of at least one type of particle, selected from inorganic piezoelectric particles, electrically conductive ceramic particles, and combinations thereof, an anionic and / or nonionic dispersant, and water. For a nickel alloy, the dispersion electrolyte contains ions of at least one further metal, selected from transition metals, noble metals, and combinations thereof, in a total concentration of up to 40 g / L, and / or at least one non-metal compound, selected from phosphorus compounds, sulfur compounds, selenium compounds, tellurium compounds, carbon compounds, and combinations thereof, in a total concentration of up to 50 g / L. The pH value is 2.0 to 7.0.The dispersion electrolyte can be used to electroplat a layer of nickel or nickel alloy containing particles onto a metallic or metallized substrate.

This invention belongs to the field of nuclear reactor target safety design, specifically relating to a method and system for calculating the internal pressure of a target based on the amount of tellurium compound. The method first determines the required core data; based on the mass and density of the tellurium compound, the effective volume of iodine vapor inside the target is calculated, where the effective volume is the internal volume of the target minus the volume occupied by the tellurium compound; based on the mass of the tellurium compound, the tellurium element mass fraction, and the number of iodine molecules generated per unit mass of tellurium element, the total amount of iodine vapor is calculated; based on the ideal gas law, the internal pressure of the target is calculated using the total amount of vapor, the gas constant, the operating temperature, and the effective volume. This invention establishes a dynamic correlation between the amount of tellurium compound and the effective volume, clarifies the mass conversion relationship between Te and the tellurium compound, and constructs a high-precision I-131 target internal pressure calculation model, possessing significant engineering application value and theoretical innovation significance.

This invention relates to a terahertz transparent electrode based on a nickel-tellurium compound, its preparation method, and its application, belonging to the field of terahertz electrode technology. To address the problem that existing terahertz transparent electrodes cannot simultaneously achieve high transmittance and good conductivity in the terahertz wave propagation direction, this invention provides a terahertz transparent electrode based on a nickel-tellurium compound, comprising a substrate and a nickel-tellurium compound thin film. This invention prepares nickel-tellurium compound thin films with different nickel-tellurium ratios by setting targets with different nickel-tellurium areas, achieving adjustment of the conductivity, transmittance, and thickness of the terahertz transparent electrode. This balances high transmittance and high conductivity in the terahertz band, resulting in a nickel-tellurium compound-based terahertz transparent electrode with a transmittance exceeding 80% and a conductivity greater than 1000 S / cm in the terahertz band, meeting the qualification standards for transparent conductive thin films. The preparation method of this invention has low requirements and is suitable for practical mass production of terahertz transparent electrodes.

This invention belongs to the field of optical absorber technology, specifically relating to a broadband reconfigurable metasurface perfect absorber for mid-wave infrared applications. The absorber comprises, in the thickness direction, a metal substrate layer, a dielectric layer, a metasurface structure, and a protective layer. The metasurface structure is composed of a periodic array of multiple unit structures, with adjacent unit structures having different outer diameters. Each unit structure is made of indium antimony tellurium compound, and the composition of the indium antimony tellurium compound is In. x Sb y Te z , of which 2.5

To provide a resin-supported cyclic tellurium compound, and to provide a method for effectively forming an intramolecular or intermolecular disulfide bond, which uses the resin-supported cyclic tellurium compound, and a method for effectively producing a compound having an intramolecular or intermolecular disulfide bond, which includes the method.SOLUTION: There is provided a resin-supported cyclic tellurium compound. The resin-supported cyclic tellurium compound is used as a catalyst of formation reaction of an intramolecular or intermolecular disulfide bond.SELECTED DRAWING: Figure 1

Methods, systems, and devices for forming an indium chalcogenide film are described. Precursors that include an indium-cyclopentadienyl compound may enable formation of indium chalcogenide films at a lower temperature as compared to other precursors including indium, as the reactivity of indium-cyclopentadienyl compounds may be higher than these other precursors. Additionally, using ammonia as a reagent during the atomic layer deposition process to form the indium chalcogenide film may enable an increased rate of formation of indium chalcogenide films for a given temperature. A method may include reacting an indium-cyclopentadienyl precursor and a second precursor that includes a selenium compound or a tellurium compound to form an indium chalcogenide.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

A method for making multi-layered semiconductor particles, which can also be referred to as quantum dots, is described. The method includes mixing a first zinc-containing compound and a selenium-containing compound to form a ZnSe mixture. The zinc-containing compound and the selenium-containing compound are rapidly mixed in less than or about 5 seconds. The method also includes adding a tellurium-containing compound to the ZnSe mixture to form at least one ZnSeTe particle in the ZnSeTe mixture. Still further, the method includes forming a first shell layer on the ZnSeTe particle and forming a second shell layer on the first shell layer to make the multi-layered semiconductor particle. In additional embodiments, the reactants and particle mixture can be rapidly stirred. The light emitted by the multi-layered semiconductor particle can be characterized by an improved narrowband emission profile (i.e., sharpness).

Methods for preparing catalysts for oxidative dehydrogenation (ODH) of alkanes such as ethane are provided An exemplary method includes providing a first mixture including metal oxides; a reducing agent; and one or more of a bismuth compound, an antimony compound, and a tellurium compound; and heating the first mixture to form the catalyst. The first mixture is essentially free of water. The metal oxides include an oxide of molybdenum and an oxide of vanadium. The bismuth compound includes bismuth oxide, bismuth hydroxide, or a bismuth carbonate. The antimony compound includes an oxide of antimony, antimony acetate, or antimony ethoxide. The tellurium compound includes tellurium dioxide.

This lithography film-forming composition contains a multi-branched type tellurium-containing resin obtained through an addition reaction of: at least one aromatic compound selected from the group consisting of polyphenyl compounds and fused polycyclic aromatic hydrocarbon compounds; and at least one tellurium compound selected from the group consisting of tellurium tetrachloride and tetraalkoxy telluriums. The lithography film-forming composition contains a multi-branched type tellurium-containing resin having high solubility with respect to solvents, excellent film-forming characteristics, and high heat resistance.

The application discloses a low-loss hetero-junction semiconductor material based on antimony tellurium compound and preparation and application thereof, and relates to the following steps: irradiating a stable hexagonal phase Sb2Te3 crystal sample with a high-energy particle beam, so that the bulk phase inside the sample is converted into a cubic phase, and the hexagonal phase structure of a region from the surface to the inside of the sample to 10 nm is kept unchanged; the stable hexagonal phase Sb2Te3 bulk phase inside structure is converted into a cubic phase; and the Anderson insulating property of the bulk phase inside makes the charges be subjected to Anderson localization, and the charges are converted into an insulating state. The application converts the bulk phase inside of the topological insulator hexagonal phase Sb2Te3 crystal into a cubic phase by irradiating the bulk phase inside with a high-energy particle beam, forms charge Anderson localization in the bulk phase, converts the bulk phase into an insulating state, keeps the hexagonal phase topological insulating property in the range from the surface to the inside of the sample to 10 nm, can inhibit the electric transport performance of the bulk phase inside, drives the current to pass through only the surface, thereby reducing the transport loss, and realizes super-low power consumption transport.

The invention relates to the technical field of functional polymer materials and surface engineering, in particular to a fluorine-free silicon-containing anti-icing coating preparation method based on organic tellurium compound regulation, which comprises the following steps: mixing a silicon-containing monomer and a polar monomer, and uniformly stirring at room temperature to form a precursor solution; adding an organic azo compound and an organic tellurium compound into the precursor solution in an inert atmosphere, reacting, purifying and drying to obtain a silicon-containing copolymer; dissolving the obtained silicon-containing copolymer in a solvent, and then adding a cross-linking agent to prepare a coating solution; and uniformly coating the surface of a base material with the coating liquid, and drying to form the fluoride-free silicon-containing anti-icing coating. The invention also provides the fluoride-free silicon-containing anti-icing coating obtained by the method, the surface water contact angle is greater than 100 degrees, and the ice adhesion strength is less than 50 kPa. The process is simple and convenient, the components are green and environment-friendly, and the prepared fluoride-free silicon-containing anti-icing coating material is suitable for icing protection in complex environments such as wind power blades, aerospace components and power lines.

The alkaline battery of the present invention includes, as power generation components, a positive electrode containing silver oxide as a positive electrode active material, a negative electrode, a separator, and an alkaline electrolyte solution. At least one of the power generation components contains tellurium or a compound of tellurium. The total content of tellurium element contained in components housed in the battery is 0.4 parts by mass or more with respect to 100 parts by mass of the total amount of silver element in the positive electrode active material. The positive electrode is substantially free of cadmium.

The present invention discloses a birefringent crystal and a preparation method thereof, belonging to the field of optical material technology. The chemical formula of the birefringent crystal is SbTeO3F; the space group of the birefringent crystal is P212121; the unit cell parameters are α=90°, β=90°, γ=90°, and Z=4. During preparation, an antimony-containing compound and a tellurium-containing compound are dissolved in a mixed solution, which is then filtered, and the filtrate is allowed to stand at room temperature for 4 to 5 days; the precipitated crystals are then collected and washed to obtain the obtained product. The birefringent crystal preparation process of the present invention is simple and has good repeatability. It can reduce the preparation cost while improving the yield. The obtained birefringent crystal has a large birefringence and can remain stable in both air and water, and has good physical and chemical stability.

The invention discloses a material treatment method for radiopharmaceutical preparation. The material treatment method comprises the following steps: dissolving an irradiated tellurium dioxide target material in a sodium hydroxide solution to generate a sodium tellurite solution; adding hydrogen peroxide and a composite-phase molybdenum carbide catalyst into the solution, and adjusting the pH to an acidic condition to promote the tellurite radical to be preferentially converted into a high-valence tellurium compound; the method comprises the following steps: cooling I-containing iodine vapor through nitrogen-assisted distillation, and introducing the cooled I-containing iodine vapor into an alkaline NaOH solution for capturing; a composite-phase molybdenum carbide catalyst is adopted, the ratio of alpha-MoC to beta-MoC is regulated and controlled, and TiO deposition modification on the surface of beta-MoC is combined, so that the activity, stability and selectivity of the catalyst are remarkably improved; experiments show that the method enables the yield of iodine-131 to reach 92.76%, the purity to reach 99.65% and the content of by-products to be reduced to 0.12%; the contrast experiment further verifies the influence of the catalyst dosage, the phase composition and the distillation condition on the result, and verifies that efficient and high-purity iodine-131 preparation is realized through the catalytic synergistic effect and the surface functionalization design.

The application discloses an optical phase change storage material based on arsenic tellurium compound, a device and a preparation method thereof, which comprises arsenic (As) elements and tellurium (Te) elements, and the chemical formula of the phase change material is As x Te y , wherein 1

The present application relates to the field of functional polymer materials and surface engineering technology, and particularly relates to a fluorine-free silicon-containing anti-icing coating preparation method based on organic tellurium compound regulation, which comprises the following steps: mixing a silicon-containing monomer and a polar monomer, stirring uniformly at room temperature to form a precursor solution; adding an organic azo compound and an organic tellurium compound to the precursor solution under an inert atmosphere, and then performing reaction, purification and drying to obtain a silicon-containing copolymer; dissolving the obtained silicon-containing copolymer in a solvent, adding a crosslinking agent to prepare a coating solution; uniformly coating the coating solution on the surface of a substrate, and drying to form a fluorine-free silicon-containing anti-icing coating. The present application also provides the fluorine-free silicon-containing anti-icing coating obtained by the method, which has a surface water contact angle greater than 100° and an ice adhesion strength less than 50 kPa. The present application has a simple process, green and environmentally-friendly components, and the prepared fluorine-free silicon-containing anti-icing coating material is suitable for icing protection under complex environments such as wind power blades, aerospace components and power lines.

The invention discloses a compound rubidium scandium tellurate second-order nonlinear optical crystal as well as a preparation method and application thereof, and belongs to the technical field of optical crystal materials. The method comprises the following steps: mixing a scandium-containing compound, a rubidium-containing compound and a tellurium-containing compound, preparing the compound rubidium scandium tellurate by adopting a solid-phase reaction method, and heating and melting the obtained compound rubidium scandium tellurate single-phase polycrystalline powder or a mixture of the obtained compound rubidium scandium tellurate single-phase polycrystalline powder and a fluxing agent to obtain uniform mixed melt; or directly heating and melting a mixture of the scandium-containing compound, the rubidium-containing compound and the tellurium-containing compound or a mixture of the scandium-containing compound, the rubidium-containing compound, the tellurium-containing compound and the fluxing agent to obtain uniform mixed melt, and performing crystal growth to obtain the scandium-containing rubidium-tellurium-containing crystal. The crystal has stable physical and chemical properties, has potential application value, can be applied to nonlinear optical devices, such as laser frequency multipliers, can generate laser output different from incident light frequency, and provides new material selection and technical support for development of laser technology.

The invention discloses a lanthanum-niobium-tellurium compound, a lanthanum-niobium-tellurium nonlinear optical crystal and a preparation method and application of the lanthanum-niobium-tellurium nonlinear optical crystal. The chemical formula of the crystal is LaNbTe2O8, the crystal is of a non-centrosymmetric structure and belongs to an orthorhombic crystal system, the space group is Abm2, and the unit cell parameters are # imgabs0 # alpha = 90 degrees, beta = 90 degrees, gamma = 90 degrees, Z = 4 and # imgabs1 # # imgabs2. The nonlinear optical crystal has a high damage threshold, a large nonlinear optical effect and a wide transmission range, the frequency-doubled effect is equivalent to that of KTP, and the crystal is stable in physicochemical property, good in mechanical property and high in mechanical property. And cutting, polishing and storing are easy.