Te-doped Cs2ZrCl6 perovskite derivative material and preparation method and application thereof

A derivative and perovskite technology, applied in the field of photoluminescence fluorescence of perovskite derivatives, can solve the problem that lead-free halide perovskite cannot match the photoelectric performance of lead-based perovskite, and achieve low cost, Wide application prospects, easy to obtain effects

Inactive Publication Date: 2021-02-12
GUANGXI UNIV
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above problems have been effectively solved, lead-free halide perovskites still cannot match the optoelectronic performance of lead-based perovskites in the same period.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Te-doped Cs2ZrCl6 perovskite derivative material and preparation method and application thereof
  • Te-doped Cs2ZrCl6 perovskite derivative material and preparation method and application thereof
  • Te-doped Cs2ZrCl6 perovskite derivative material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Place 1 mmol of cesium chloride and 0.5 mmol of zirconium chloride in a Teflon liner, and add 5 mL of concentrated hydrochloric acid.

[0031] (2) Put the Teflon lining in the reaction kettle, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature.

[0032] (3) The reactant was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.

Embodiment 2

[0034] (1) Place 1 mmol of cesium chloride, 0.5 mmol of zirconium chloride and 0.0005 mmol of tellurium tetrachloride in a Teflon liner, and add 5 mL of concentrated hydrochloric acid.

[0035] (2) Put the Teflon lining in the reaction kettle, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature.

[0036] (3) The reactant was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.

Embodiment 3

[0038] (1) Place 1 mmol of cesium chloride, 0.5 mmol of zirconium chloride and 0.005 mmol of tellurium tetrachloride in a Teflon liner, and add 5 mL of concentrated hydrochloric acid.

[0039] (2) Put the Teflon lining in the reaction kettle, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature.

[0040] (3) The reactant was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.

[0041] Te doped Cs prepared in this embodiment 2 ZrCl 6 The perovskite derivative powder is fully mixed with the epoxy resin, and then the obtained slurry is coated on the surface of the light-emitting diode chip (395nm), and finally cured at 50-150°C for 0.5-72h to make the light-emitting diode device. like Figure 4 As shown, Te-doped Cs 2 ZrCl 6 The color coordinate (CIE) diagram of the perovskite derivative light-emitting diode, the coordinate value is (0.466,0.506), the main wavelen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Te-doped Cs2ZrCl6 perovskite derivative material and a preparation method and application thereof, and the Te-doped Cs2ZrCl6 perovskite derivative material is prepared by taking a cesium-containing compound, a zirconium-containing compound and a tellurium-containing compound as reaction reagents and taking concentrated hydrochloric acid as a solution. And the influence ofthe tellurium doping amount on the luminous efficiency is explored. The Te-doped Cs2ZrCl6 perovskite derivative material prepared by adopting a solvothermal method is good in crystallinity, stable instructure, simple and convenient in preparation process, capable of being rapidly synthesized on a large scale and high in luminous efficiency. The problem of toxicity of lead-based perovskite is effectively solved by replacing lead with zirconium; the fluorescent powder can realize 575nm broadband yellow light emission under the excitation of ultraviolet light. Good application prospects are realized in the fields of illumination, display, projection, LEDs, fluorescent probes and the like.

Description

technical field [0001] The invention belongs to materials in the field of perovskite derivative photoluminescence fluorescence technology, and specifically relates to a Te-doped Cs 2 ZrCl 6 Perovskite derivative materials and their preparation methods and applications. Background technique [0002] In recent years, benefiting from balanced electron and hole mobility, long carrier diffusion length, high photoluminescence quantum yield (PLQY), strong spin-orbit coupling, and low-cost solution preparation, lead halide perovskite APbX 3 (A=CH 3 NH 3+ , CH(NH 2 ) 2+ or Cs + ) have found potential applications as color converters in next-generation solid-state lighting and backlight displays due to their special luminescent properties, such as high brightness, color tunability, and strong absorption coefficient. Unfortunately, the inherent poor stability and poor toxicity of lead halide perovskites are some serious problems that need to be solved for the large-scale applica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/67
CPCC09K11/88
Inventor 曾若生常通
Owner GUANGXI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products