Te-doped Cs2ZrCl6 perovskite derivative material and preparation method and application thereof
A derivative and perovskite technology, applied in the field of photoluminescence fluorescence of perovskite derivatives, can solve the problem that lead-free halide perovskite cannot match the photoelectric performance of lead-based perovskite, and achieve low cost, Wide application prospects, easy to obtain effects
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Embodiment 1
[0030] (1) Place 1 mmol of cesium chloride and 0.5 mmol of zirconium chloride in a Teflon liner, and add 5 mL of concentrated hydrochloric acid.
[0031] (2) Put the Teflon lining in the reaction kettle, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature.
[0032] (3) The reactant was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.
Embodiment 2
[0034] (1) Place 1 mmol of cesium chloride, 0.5 mmol of zirconium chloride and 0.0005 mmol of tellurium tetrachloride in a Teflon liner, and add 5 mL of concentrated hydrochloric acid.
[0035] (2) Put the Teflon lining in the reaction kettle, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature.
[0036] (3) The reactant was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.
Embodiment 3
[0038] (1) Place 1 mmol of cesium chloride, 0.5 mmol of zirconium chloride and 0.005 mmol of tellurium tetrachloride in a Teflon liner, and add 5 mL of concentrated hydrochloric acid.
[0039] (2) Put the Teflon lining in the reaction kettle, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature.
[0040] (3) The reactant was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.
[0041] Te doped Cs prepared in this embodiment 2 ZrCl 6 The perovskite derivative powder is fully mixed with the epoxy resin, and then the obtained slurry is coated on the surface of the light-emitting diode chip (395nm), and finally cured at 50-150°C for 0.5-72h to make the light-emitting diode device. like Figure 4 As shown, Te-doped Cs 2 ZrCl 6 The color coordinate (CIE) diagram of the perovskite derivative light-emitting diode, the coordinate value is (0.466,0.506), the main wavelen...
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