Method for activating CdTe thin film solar cell

A thin-film solar cell and activation method technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of complicated and lengthy processes, poor compatibility, etc., and achieve the effect of promoting lattice growth and preventing oxidation.

Active Publication Date: 2021-05-07
CHINA TRIUMPH INT ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for activating a CdTe thin film battery, which is used t

Method used

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  • Method for activating CdTe thin film solar cell
  • Method for activating CdTe thin film solar cell
  • Method for activating CdTe thin film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A CdTe thin film solar cell semi-finished structure is provided, including a substrate 100, a bottom electrode 200 is arranged on the substrate 100, a CdS / CdSe buffer layer 301 and a CdTe light absorption layer 302 are sequentially deposited on the bottom electrode 200; the substrate 100 is a tempered glass substrate, organic glass One of the substrates; the bottom electrode 200 is an ITO conductive film layer. The CdS / CdSe buffer layer 301 has a thickness of 10 nm, and the CdTe light absorbing layer 302 has a thickness of 2.0 μm.

[0042] Prepare activation solution 500, add cupric chloride, zinc chloride and tellurium oxide to ammonia solution containing sodium hydroxide, after all of them dissolve, add hydrazine hydrate to obtain activation solution, pH value 12.5, zinc element content 0.05mol / L, Copper element 0.01mol / L, tellurium element 0.06mol / L, hydrazine hydrate 0.4mol / L.

[0043] The activation solution 500 is spin-coated on the CdTe light absorbing layer 302...

Embodiment 2

[0047] A CdTe thin film solar cell semi-finished structure is provided, including a substrate 100, a bottom electrode 200 is arranged on the substrate 100, a CdS / CdSe buffer layer 301 and a CdTe light absorption layer 302 are sequentially deposited on the bottom electrode 200; the substrate 100 is a tempered glass substrate, organic glass One of the substrates; the bottom electrode 200 is an ITO conductive film layer. The CdS / CdSe buffer layer 301 has a thickness of 150 nm, and the CdTe light absorbing layer 302 has a thickness of 10 μm.

[0048] Prepare the activation solution 500, add copper chloride, zinc chloride and potassium tellurite to the ammonia solution containing potassium hydroxide, after all of them dissolve, add hydrazine hydrate to obtain the activation solution, the pH value is 14, and the zinc element content is 0.15mol / L, copper element 0.015mol / L, tellurium element 0.15mol / L, hydrazine hydrate 0.8mol / L.

[0049] The activation solution 500 is spin-coated ...

Embodiment 3

[0053] A CdTe thin film battery semi-finished structure is provided, including a substrate 100, a bottom electrode 200 is arranged on the substrate 100, a 40nm MgZnO window layer 400, a CdS / CdSe buffer layer 301 and a CdTe light absorption layer 302 are sequentially deposited on the bottom electrode 200; the substrate 100 is One of tempered glass substrate and plexiglass substrate; the bottom electrode 200 is an ITO conductive film layer. The CdS / CdSe buffer layer 301 has a thickness of 50 nm, and the CdTe light absorbing layer 302 has a thickness of 2.0 μm.

[0054] Prepare the activation solution 500, add copper chloride, zinc chloride and sodium tellurite to the ammonia solution containing sodium hydroxide, after it is completely dissolved, add hydrazine hydrate to obtain the activation solution, the pH value is 13, and the zinc element content is 0.1mol / L, copper element 0.02mol / L, tellurium element 0.115mol / L, hydrazine hydrate 0.5mol / L.

[0055] The activation solution...

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Abstract

The invention provides a method for activating a CdTe thin film solar cell, which comprises the steps of providing a CdTe thin film solar cell semi-finished product structure which comprises a substrate, wherein the substrate is provided with a bottom electrode, and a CdS/CdSe buffer layer and a CdTe light absorption layer are sequentially deposited on the bottom electrode; preparing an activating solution, specifically, adding copper chloride, zinc chloride and a tellurium-containing compound into an ammonia water solution containing alkali, and adding hydrazine hydrate to obtain the activating solution after the copper chloride, the zinc chloride and the tellurium-containing compound are completely dissolved; coating the CdTe light absorption layer with the activating solution; and drying the activating solution for reaction, and performing annealing heat treatment to activate the CdTe light absorption layer. The novel activating solution is prepared, the solution plays a role in activation, copper ions in the solution are locked by Te in a co-reduction system, diffusion of the copper ions to the light absorption layer is limited, and the ZnTe: Cu back good contact layer with matched components is obtained. In addition, the activating solution is a reduction system, and oxidation in the activation annealing process is effectively prevented.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic cells, in particular to a method for activating a CdTe thin film solar cell. Background technique [0002] CdTe thin-film solar cells have become one of the most promising thin-film solar cells due to their high efficiency, low cost, and ease of mass production. Mass production of CdTe thin-film solar cell glass for BIPV usually adopts physical vapor phase processes such as vapor transport deposition (VTD) or near-space sublimation (CSS) to prepare key film layers such as CdS, CdSe buffer layer, and CdTe light-absorbing layer. Uniform thickness, easy to control and so on. [0003] However, from the perspective of material forming, the CdTe film obtained by the physical vapor phase process has uneven grain growth due to the relationship between heating time and temperature, with small grain size and many crystal defects. And the lattice mismatch between CdS or CdSe and CdTe leads to the exis...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/1836H01L31/1864Y02E10/50
Inventor 彭寿汪元元吴一民马立云殷新建陈瑛
Owner CHINA TRIUMPH INT ENG
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