9results about "Tin halides" patented technology

This invention discloses a method for preparing doped tin dioxide nanocrystals that can be highly dispersed in any water-to-alcohol ratio. The preparation method includes the following steps: (1) adding trimethylamine oxide to an aqueous solution containing tin halide to produce a white precipitate and stirring; (2) subjecting the mixture obtained in step (1) to a hydrothermal reaction at 120–200°C for 3–24 h, separating the solid and liquid phases after the reaction, and dispersing the solid phase in pure water, pure alcohol, or a water-to-alcohol mixture with any water-to-alcohol ratio to obtain a halogen-doped tin dioxide dispersion; (3) adding an organic base stabilizer to the halogen-doped tin dioxide dispersion and mixing to obtain halogen-doped tin dioxide nanocrystals that are highly dispersed in pure water, pure alcohol, or a water-to-alcohol mixture with any water-to-alcohol ratio. The preparation method of this invention is simple and inexpensive, broadens the application field of tin dioxide, and has important application value.

Disclosed are tin-based perovskite field effect transistor memory and a method for manufacturing the same. In detail, a perovskite comprises at least one selected from the group consisting of cesium (Cs), methylammonium (MA), and formamidinium (FA); a compound represented by the structural formula 1; at least one selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); and tin (Sn). The transistor memory of the present invention can be utilized as a p-type transistor or a memory device, and can be utilized as a device for in-memory processing.

The techniques disclosed herein relate to sol-gel materials that include at least one metal halide precursor and at least one alcohol. After annealing, the metal in the metal halide is in at least two different oxidation states, both of which are stable and transparent to visible light. By creating a mixture of the same metal in multiple oxidation states, all of which are transparent to visible light, it is possible to obtain an amorphous sol-gel material for overcoating without forming any significant domains that, if formed, would locally distribute stress and create voids in the nanolattice. The highly condensed sol-gel has a refractive index value in the range of 1.7 to 2.2 without sacrificing the filling of recessed features.

To provide a tin-based perovskite field effect transistor memory and a method for manufacturing the same.SOLUTION: The present invention provides a perovskite containing one or more elements selected from the group consisting of cesium (Cs), methylammonium (MA), and formamidinium (FA), a compound represented by the structural formula 1, one or more elements selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I), and tin (Sn). The thin-film transistor memory of the present invention can be used as a p-type transistor and memory element, exhibits uniform and stable memory element operation, and is lead-free, making it easy to industrialize as an environmentally friendly material, and can subsequently be used as an element for in-memory processing.SELECTED DRAWING: Figure 1

The present invention is a method for producing perovskite type quantum dots, wherein, using a plurality of precursor solutions each containing a different element, each of the plurality of precursor solutions is heated and sprayed as an aerosol of the precursor solution, and the plurality of aerosols are collided to cause a gas phase reaction, dropping in a solvent to synthesize core particles containing the different elements. This provides a method for producing quantum dots that enables control of the particle size and yields nanoparticles with a uniform particle size even in large-scale synthesis.

A stannous chloride composition and method of making a composition that is flowable at ambient conditions and is substantially free of an anti-caking agent. The composition includes anhydrous stannous chloride, stannous chloride hydrate, and water in an amount of about 1 to about 10 weight percent based on a total weight of the composition. The anhydrous stannous chloride and the stannous chloride hydrate are present in a weight ratio of about 5:95 to about 81 :19, respectively, and the composition has a dump angle of from about 20 to about 80 degrees.

Disclosed are tin-based perovskite field effect transistor memory and a method for manufacturing the same. In detail, a perovskite comprises at least one selected from the group consisting of cesium (Cs), methylammonium (MA), and formamidinium (FA); a compound represented by the structural formula 1; at least one selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); and tin (Sn). The transistor memory of the present invention can be utilized as a p-type transistor or a memory device, and can be utilized as a device for in-memory processing.

To suppress oxidation of Sn2+ to Sn4+ without requiring a new reductant agent, in a method of manufacturing a tin-based perovskite layer.SOLUTION: A method of manufacturing a tin-based perovskite layer includes: a first step of dissolving a tin-based perovskite compound in a solvent not containing dimethyl sulfoxide (DMSO) to prepare a first solution (L3); a third step of applying the first solution on a base material (S) after the first step; and a second step of mixing the DMSO (L2) to the first solution after the first step and at a predetermined time before the third step.SELECTED DRAWING: Figure 1

The application belongs to the field of new energy materials, and provides a preparation method of stannous iodide, which comprises the following steps: adding hydriodic acid into ultrapure water to configure a solution A; adding a tin source into pure water, and then adding an antioxidant to form a solution B; adding the solution A into the solution B, heating and reacting, and then adding a reaction catalyst, stirring, and obtaining an orange-red solid; separating the orange-red solid from a liquid, washing, and vacuum drying to obtain a crude stannous iodide; performing a first heating process on the crude stannous iodide to separate the stannous iodide from oxidized impurities; and then performing a second heating process to obtain stannous iodide for perovskite batteries through high-temperature purification; wherein the tin source contains divalent tin ions. The preparation method has mild reaction conditions, simple raw material acquisition and preservation, high reaction efficiency, and the prepared finished product has high quality and high purity and is not easy to be oxidized, and is used in narrow-bandgap perovskite solar cells and laminated solar cells, and the photoelectric conversion efficiency is significantly improved.