91results about "Lead halides" patented technology

Disclosed in the present invention is a method for in-situ NH4I-assisted preparation of CsPbI3 colloidal nanoplateles, comprising the following steps: S1. respectively preparing a lead iodide precursor solution, an ammonium iodide precursor solution, and a cesium oleate precursor solution; and S2. mixing the lead iodide precursor solution with the ammonium iodide precursor solution under stirring, adding the cesium oleate precursor solution for reaction to obtain a nanoplatele stock solution, and purifying and separating the nanoplatele stock solution to obtain CsPbI3 nanoplateles. In the present invention, in the method for the in-situ NH4I-assisted preparation of CsPbI3 colloidal nanoplateles, NH4I is used for in-situ replication synthesis of the CsPbI3 nanoplateles, the regulation of the growth kinetics of a system is achieved, the reaction process is more controllable, and the synthesized nanoplateles have a narrower peak width at half height, and a more uniform phase distribution, meeting requirements of light emitting in a red light range.

The invention discloses an electronic waste efficient chlorination comprehensive recovery device and method, and relates to the technical field of chemical metallurgy, the electronic waste efficient chlorination comprehensive recovery device comprises a chlorination reaction cavity, a heating system, a vacuum system, an atmosphere control system and a condensation separation system; the heating system is used for controlling the temperature of the chlorination reaction cavity; the vacuum system is communicated with the heating system; the atmosphere control system comprises a chlorine gas source and a protective gas source; and the temperature of the condensation separation system is gradually reduced. Through the high-purity graphite heating assembly, the sealing structure and the atmosphere control system, the highest heating temperature is 1700 DEG C, the temperature limit of 1200 DEG C of a traditional quartz tube furnace can be broken through, the chlorine corrosion problem is solved, chlorine is not leaked, and the environment is not polluted. High-valued recovery of different metal resources can be achieved through low-temperature pyrolysis, high-temperature chlorination volatilization and three-stage condensation settling separation, and the method has the advantages of being low in energy consumption, high in recovery rate, environmentally friendly and the like and is suitable for industrial metal resource recovery.

The invention discloses a preparation method of a water-soluble CsPbBr3 perovskite quantum dot fluorescence sensing array and application of the water-soluble CsPbBr3 perovskite quantum dot fluorescence sensing array in rapid detection and inactivation of food-borne pathogenic bacteria. The sensor array is composed of three perovskite quantum dots (respectively named as PQD1, PQD2 and PQD3) with different fluorescence characteristics, wherein the perovskite quantum dots are synthesized at room temperature. The feasibility of constructing the sensing platform is verified through different fluorescence responses after the sensing platform is combined with five food-borne pathogenic bacteria (escherichia coli, staphylococcus aureus, salmonella typhimurium, listeria monocytogenes and pseudomonas aeruginosa). The relative signal intensity change is further analyzed through a machine learning algorithm, and rapid recognition and identification of pathogenic bacteria are achieved. In addition, the sensing array shows high practicability and accuracy in actual sample detection, and pathogenic bacteria can be effectively inactivated after 30 minutes of detection. The invention provides a novel efficient and reliable technical solution for food safety detection.

The invention belongs to the technical field of lead iodide crystal preparation, and discloses a lead iodide crystal and a method for adjusting the preferred orientation of a lead iodide crystal face, the method for adjusting the preferred orientation of the lead iodide crystal face comprises the following steps: step 1, adding an acid solution into a lead iodide solution, and diluting the lead iodide solution until the concentration of lead iodide is 10mM-50mM; 2, the diluted lead iodide solution is subjected to aging treatment, a solid-liquid mixture is obtained, the aging temperature ranges from 25 DEG C to 120 DEG C, the aging pressure is smaller than or equal to 6 Mpa, and the aging time ranges from 2 h to 4 h; and step 3, controlling the cooling rate of the solid-liquid mixture to be 6-10 DEG C / min for cooling, and then separating to obtain solid lead iodide. According to the method disclosed by the invention, the preferred growth condition of the lead iodide crystal face is controlled through concentration control, an aging process and a sectional cooling process under the condition that a complexing agent, a surfactant or a template agent does not need to be additionally added.

Provided are a method for forming a perovskite compound thin film and a method for manufacturing a solar cell using the same, the method comprising: a step for supplying a B precursor into a chamber; a step for supplying the X precursor to the chamber for the first time while keeping the power for plasma generation on; and a step for supplying a precursor A, which is formed from at least one compound selected from the group consisting of amine compounds and amidine compounds, into the chamber, the precursor B being formed from an organometallic compound containing a divalent positive ion, the precursor X being formed from a hydrohalide, and the precursor A being formed from at least one compound selected from the group consisting of amine compounds and amidine compounds. The step of supplying the A precursor is performed after the step of supplying the B precursor and the step of supplying the X precursor for the first time.

The invention provides a molybdenum disulfide / perovskite heterojunction composite material and a preparation method and application thereof. The composite material is formed by growing mixed powder of lead halide and cesium halide on the surface of a molybdenum disulfide material. Comprising the following steps: (a) fully mixing lead halide and cesium halide powder according to a certain proportion, and placing the mixture in a crucible; (b) putting the crucible in which the mixed powder is placed into a tubular furnace, putting a molybdenum disulfide substrate above the crucible by 10cm, and pumping out air in the tubular furnace; (c) setting a tube furnace program, and heating and preserving heat at a certain speed and for a certain time; after the procedure is finished, the temperature of the tubular furnace is reduced to the room temperature, and the heterojunction composite material is obtained. The size of the composite material can reach a wafer level (2 inches), and the composite material has excellent photoelectric properties and has wide application prospects in photoelectric detectors with photoconductive structures.

To provide a method for industrially advantageously producing lead iodide of high purity and low water content in good yield.SOLUTION: The method for producing lead iodide includes a step of bringing lead oxide into contact with hydroiodic acid.SELECTED DRAWING: None

The invention discloses a silicon carbide ion beam polishing optimization method based on light metal ion doped quantum dots, and belongs to the technical field of sacrificial layer materials. The method for in-situ growth of the CsPbBr3 quantum dot sacrificial layer on the surface of the SiC material comprises the following steps: mixing a lead source, a cesium source and a solvent to obtain a CsPbBr3 precursor solution; light metal ions are doped in the CsPbBr3 precursor solution, and a CsPbBr3 precursor solution doped with the light metal ions is obtained; and dropwise adding the light metal ion doped CsPbBr3 precursor solution to the surface of the SiC material, flattening, heating for crystallization, and annealing to obtain the SiC material with the CsPbBr3 quantum dot sacrificial layer grown in situ. According to the invention, the CsPbBr3 quantum dot layer is used as a sacrificial layer of the SiC wafer, the light-emitting performance of the quantum dots is improved through light metal ion doping, and meanwhile, the interface bonding force between the quantum dot layer and the SiC wafer is enhanced.

This invention discloses a ligand-assisted redeposition method for preparing lead halide perovskite nanocrystals. The preparation includes the following steps: (1) Weighing powders in sequence according to the following mass values: 0.147 g lead bromide, 0.085 g cesium bromide, and 0.09 g zinc bromide; (2) Placing the raw materials into a glass bottle containing solution A and stirring magnetically for 0.5 h, then adding the mixed solution into the glass bottle and stirring magnetically for 0.5 h until the solution is clear and transparent; (3) At room temperature, adding the precursor solution to a vigorously stirred antisolvent and stirring for 1 min to obtain a crude solution of lead halide perovskite nanocrystals, which is then centrifuged and purified to obtain the lead halide perovskite nanocrystal solution. The new preparation method of lead halide perovskite nanocrystals provided by this invention proposes a new preparation method of lead halide perovskite nanocrystals by changing the type of antisolvent and adding zinc bromide, and simplifies the purification steps and optimizes the luminescence properties of inorganic lead halide perovskite materials. The preparation method of the present invention has the advantages of low cost, simple operation and rapid preparation; the method of the present invention can prepare inorganic lead halide perovskite nanocrystal materials with adjustable luminescence range, good photoluminescence performance and high stability.

A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

The invention relates to a method for rapidly synthesizing double-ligand-coated CsPbX3 nanoparticles through ion exchange, which comprises the following steps: by taking cesium carbonate as a cesium source, taking lead bromide as a lead source and a bromine source, taking oleic acid and oleylamine as stabilizers and taking octadecene as a reaction solvent, firstly synthesizing a CsPbBr3 parent through a thermal injection method; according to the preparation method, cysteine and titanium dioxide co-coated CsPbX3 (X = C1, Br and I) nano particles are rapidly synthesized on the basis of the ion exchange principle, required raw materials are easy to obtain, ion exchange can be carried out within a few seconds, due to co-coating of cysteine and titanium dioxide, generated CsPbBr3, CsPbCl3 and CsPbI3 nano particles have good water solubility and good stability in a polar solution, and can be used for preparing the CsPbBr3, CsPbCl3 and CsPbI3 nano particles. The polymer can be stored in an aqueous solution for more than 96 hours, and has a characteristic fluorescence wavelength.

The invention relates to the technical field of solar cells, in particular to a high-purity lead iodide synthesis method which comprises the following steps: S1, preparing a lead salt solution; s2, filtering to obtain a primary lead salt solution; s3, diluting the primary lead salt solution to 0.015-0.15 mol / L, carrying out activated carbon adsorption and ion exchange resin purification, carrying out reduced pressure evaporation, and washing to obtain a high-purity lead salt crystal; s4, dropwise adding the high-purity lead salt solution into the iodized salt solution for precipitation reaction, and filtering after aging; and S5, dispersing the precipitate in a first solvent, washing, and filtering to obtain the high-purity lead iodide. The invention relates to a high-purity lead iodide synthesis method, which comprises the following steps: applying a low-cost auxiliary solvent to a lead dissolution reaction, carrying out precipitation reaction on a lead salt solution, carrying out preliminary impurity removal treatment, carrying out resin adsorption and other combined processes, reducing the content of impurity elements in high-quality metal lead, and preparing high-purity lead iodide; the combined process is easy and convenient to operate, the used reagents are wide in source and low in cost, the final product is high in purity, operation conditions are mild, and the combined process is suitable for the requirement of large-scale process production.

The invention discloses a preparation method of all-inorganic perovskite quantum dot polymer microsphere powder, which comprises the following steps: S1, heating and stirring raw materials containing a cesium source, a lead source, a halogen ligand, a polymer, a polar solvent and a crystallization retarder to form a precursor solution; s2, performing spray drying on the precursor solution in the step S1 to form microsphere polymer powder; and S3, carrying out secondary curing on the microsphere polymer powder in the step S2, and grinding to obtain the all-inorganic perovskite quantum dot polymer microsphere powder. The crystallization speed of the perovskite is reduced by introducing the crystallization speed-reducing auxiliary agent, and especially under the condition that the solubility of the cesium bromide raw material in the polar solvent is not high, the problems of low quantum dot generation efficiency, many defects, weak luminescence and poor stability caused by precipitation and crystallization in advance are solved. And an in-situ high-temperature spraying method is used, so that the tedious and expensive synthesis process of high-temperature heat injection is avoided, and the quantum dots are well embedded in the surfaces and pores of the polymer microspheres.

A fluoride shuttle secondary battery (1) of the present disclosure is a fluoride shuttle secondary battery including: a positive electrode (2); a negative electrode (4); and an electrolyte layer (3) arranged between the positive electrode (2) and the negative electrode (4), wherein the fluoride shuttle secondary battery satisfies at least one selected from the group consisting of the following (A1) and (B1). (A1) The negative electrode (4) contains a first negative electrode active material and a second negative electrode active material having composition different from that of the first negative electrode active material, the first negative electrode active material is a first metal fluoride containing a metal M1, and the metal M1 has a melting point of 0°C or more and 250°C or less. (B1) The positive electrode (2) contains a first positive electrode active material and a second positive electrode active material having composition different from that of the first positive electrode active material, and the first positive electrode active material is a metal M2, which forms a metal fluoride represented by M2Fx and having a melting point of 0°C or more and 250°C or less, where "x" represents a valence of the M2.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

The invention discloses a recovery method and application of lead halide in a waste perovskite photocatalyst, and an efficient ion exchange-directional precipitation strategy is used for recovering and reusing PbX2 resources from the perovskite photocatalyst. The recycled PbX2 resource can be applied to synthesis of the perovskite photocatalyst again to form a closed-loop cycle; the APbXbased photocatalyst synthesized by using the recovered PbX2 shows good photocatalytic performance in an ethanol generation experiment, can still keep relatively high photocatalytic efficiency after being recycled for multiple times, and has good stability and reusability; through a closed-loop recovery and reutilization strategy, lead halide in the waste perovskite is converted into a reusable resource, lead is prevented from leaking into the environment, and the risk of environmental pollution is reduced. The environment problem of lead in the waste perovskite photocatalyst is effectively solved, the recycled and prepared material is excellent in photocatalytic performance, the experiment cost is reduced, and a new thought and method are provided for sustainable development and resource application of the perovskite material.

General formula: Z n+ X - n The method comprises reacting a first reactant, which is a formate salt, with a diatomic halogen: X 2 with a second reactant which is

Inorganic perovskites doped with oxygen atoms or fluorine atoms, methods for making the doped perovskites, and hard radiation detectors incorporating the doped perovskites as photoactive layers are provided. The doped perovskites utilize lead oxide, lead fluoride, or compounds that thermally decompose into lead oxide or lead fluoride as dopant atom sources. During the crystallization of a perovskite in the presence of the dopant atom sources, oxygen or fluoride atoms from the dopant source are incorporated into the perovskite crystal lattice.

The present invention relates to the field of materials science, in particular to a method for producing films of semiconducting materials based on organic-inorganic metal-halide compounds with a perovskite-like structure that can be used as light-absorbing layers in solar cells, such as thin-film, flexible, tandem solar cells, and can also be applied to optoelectronic devices, in particular light-emitting diodes. 1. A method for producing a semiconductor film of an organic-inorganic metal-halide compound having a perovskite-like structure, the method comprising the steps of: (a) applying a layer of a precursor of component B onto a substrate; (b) applying a layer of a composite reagent onto the surface of the precursor layer of component B; and (c) treating the layer applied on the substrate with a reagent X2 for a time necessary and sufficient for the completion of a chemical reaction between the applied reagent and the precursor of component B, thereby resulting in the formation of an organic-inorganic metal-halide perovskite-like compound, wherein the composite reagent applied in step b) comprises a mixture of an AX reagent and an X2 reagent, the [X2] / [AX] molar ratio being in the range of 0<[X2] / [AX]<1, and the film obtained after step b) comprises seeds of a phase having a perovskite-like structure, and component B comprises cations M of different metals (e.g., Pb, Sn, Bi) selected from Pb, Sn, Bi, and mixtures thereof. n+ Reagent AX contains cation A + and anion X - A salt containing cation A + But methylammonium CH3NH3 + , formamidinium(NH2)2CH + , guanidinium C(NH2)3 + , Cs + , Rb + and unsubstituted (NH4 + ) or a substituted ammonium cation, such as a mono- or di- or tri- or tetra-substituted ammonium cation, and combinations thereof; an anion X - But Cl - , Br - , I -or pseudohalide anions, and combinations thereof, and the reagent X2 is a molecular halogen. The present invention provides a simpler and more efficient method for producing thin films of semiconductor films of organic-inorganic metal-halide compounds with perovskite-like structures, which can be used as light-absorbing layers in perovskite solar cells, ensuring improved efficiency compared to analogues.

Some embodiments of the present invention include an inventive method for preparing a perovskite solar cell (PSC). In certain embodiments, the method includes dissolving a functionalization material (e.g., a material that has been functionalized with one or more functionalizing compounds) in a solvent, depositing a deposition composition onto a perovskite layer, the deposition composition including the dissolved functionalization material, heating the deposition composition, and optionally removing some or all of the one or more functionalizing compounds from the deposition composition. Additional embodiments of the present invention are also disclosed herein.

The invention discloses a preparation method and application of a right triangle full-inorganic perovskite nanowire array, and belongs to the field of perovskite application, the method comprises the following steps: a plane reflection grating is used as a female die, and the surface structure of the plane reflection grating is a right triangle structure; the method comprises the following steps: firstly, carrying out surface modification on the aluminum surface of the plane reflection grating by using perfluorooctyltrichlorosilane, then dispensing a PDMS main agent and a curing agent which are uniformly mixed on the modified surface of the plane reflection grating, and curing to obtain a PDMS soft template of a groove array of which the cross section is a right triangle; finally, under the action of a capillary tube, the perovskite precursor solution is sucked into a triangular channel formed by attaching the PDMS soft template and the target substrate, and the right triangle perovskite nanowire array is formed after heating crystallization. According to the invention, the reusability of the female die is improved, and the cost is greatly reduced.

The invention discloses a preparation method of centimeter-sized needle-shaped lead iodide, which comprises the following steps: putting an iodine elementary substance and a lead elementary substance at one end in a quartz glass tube; vacuumizing and sealing the quartz glass tube; placing the sealed quartz glass tube in a tubular furnace, and simultaneously suspending one end without raw materials outside; performing first heat treatment to separate the iodine elementary substance from the lead elementary substance in the quartz tube; carrying out second heat treatment to melt the lead elementary substance and react with the iodine elementary substance; carrying out third heat treatment to enable the reaction to be fully carried out; and finally, cooling to room temperature to obtain centimeter-sized needle-shaped lead iodide.

The invention discloses a preparation method of chalcogenide-doped perovskite nanocrystals. The preparation method specifically comprises the following steps: respectively preparing a cesium precursor solution and a chalcogenide precursor solution for later use; injecting a cesium precursor into the prepared lead bromide precursor to generate perovskite nanocrystals, then injecting a chalcogenide precursor solution for doping, blocking a reaction by using an ice-water bath, and then performing centrifugal purification to obtain chalcogenide-doped perovskite nanocrystals; optionally, a cadmium precursor solution can be added during doping to further modify the morphology. According to the method, through the synergistic effect of chalcogenide element (sulfur or selenium) doping and cadmium modification, the absorption wave band of the perovskite nanocrystal can be expanded to 900 nm to the maximum in the long wavelength direction, controllable modification of the nanocrystal morphology from a cube to a sphere-like polyhedron is achieved, and a novel material basis is provided for application of wide-spectrum photothermal conversion, infrared detection and the like.

Disclosed is a method for manufacturing formamidine for perovskite materials for atomic layer deposition (ALD). The method for manufacturing formamidine according to the present invention comprises the steps of: (a) maintaining the temperature of a reactor at or below 20°C; (b) introducing a formamidine-acid compound, a basic compound, and water into the reactor; and (c) maintaining the temperature of the reactor at 60-70°C, and then raising the temperature to 70-80°C to manufacture the formamidine.

Some embodiments of the invention include inventive methods for preparing perovskite solar cells (PSCs). In certain embodiments, the method comprises dissolving a functionalized material (e.g., a material that is functionalized with one or more functionalizing compounds) in a solvent, depositing a deposit composition on a perovskite layer where the deposit composition comprises the dissolved functionalized material, heating the deposit composition, and optionally removing some or all of the one or more functionalizing compounds from the deposit composition. Additional embodiments of the invention are also disclosed herein.

A method of forming a halide perovskite nanocrystal array having a plurality of halide perovskite nanocrystals arranged in a pattern can include coating an array of pens with a first ink comprising at least one first perovskite precursor having the formula AX and at least one second perovskite precursor having the formula BX′2 dissolved in a solvent. A is a cation, B is a metal, and X and X′ are each a halogen. The method further includes contacting a substrate with the coated pen array to thereby deposit the first ink indias a pattern of printed indicia on the substrate. The printed indicia form nanoreactors on the substrate and a halide perovskite nanocrystal nucleates and grows within each nanoreactor to form the halide perovskite nanocrystal array.

The present invention provides a means for manufacturing a perovskite solar cell having high conversion efficiency and high durability. [Solution] One aspect of the present invention relates to a method for manufacturing a perovskite solar cell, comprising a coating step of coating a carrier transport layer with a precursor solution containing a precursor material for generating perovskite crystals, an additive represented by formula (I), and a solvent, and a heating step of heating the precursor layer obtained in the coating step to form a photoelectric conversion layer containing a perovskite film. Another aspect of the present invention relates to a perovskite solar cell. TIFF2026075720000004.tif27160

The invention relates to the technical field of nano materials, in particular to an amine ligand modified Yb < 3 + > doped CsPbCl3 nano crystal material and a preparation method thereof.The preparation method comprises the following steps that soluble Pb salt, soluble Yb salt, a cesium acetate ethanol solution, an amine ligand, oleic acid and octadecene are mixed, and a mixed reaction solution is obtained; the preparation method comprises the following steps: preparing a mixed reaction solution, heating the mixed reaction solution in a protective atmosphere, adding a mixed solution containing trimethylchlorosilane and ODE, terminating the reaction in an ice-water bath to obtain a turbid liquid, and centrifuging the turbid liquid to obtain the amine ligand modified Yb < 3 + > doped CsPbCl3 nanocrystal material. Along with the reduction of the amine chain length, the morphology of the nanocrystal is converted into a nanosheet from a nanocube, and the prepared crystal material has higher luminous efficiency and stability.

The invention relates to the field of wastewater treatment, in particular to a treatment method of perovskite precursor synthesis waste liquid. According to the method, the pH value of the strongly acidic perovskite precursor synthesis waste liquid is adjusted to be more than 3, so that the electrode potential of X2 / X-(X = Br <-> / Cl <-> / I <->) is reduced, the elemental halogen in the oxidation state can be reduced and recovered in the subsequent steps, and the recovery is thorough. The method is free of electrolysis, simple to operate and easy to industrialize; the used precipitant soluble lead is low in cost, and meanwhile, the recycled lead halide can be directly used for synthesizing the perovskite precursor, so that the waste of halogen elements is reduced, and the cost is saved.