Method for preparing CsPbX3 perovskite quantum dot film through one-step crystallization

A technology of perovskite and quantum dots, applied in chemical instruments and methods, devices for coating liquid on the surface, nanotechnology for materials and surface science, etc., can solve the industrial production of perovskite quantum dots in complex process links Road, low concentration of quantum dot colloidal dispersion, difficult to control the synthesis process, etc., to achieve the effect of good fluorescence performance, low cost, and uniform distribution of crystal grains

Active Publication Date: 2019-12-27
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the operation of this method is relatively complicated, and various parameters in the synthesis process have a relatively sensitive impact on the size, size distribution, and morphology of quantum dots, and the synthesis process is difficult to control and the cost is relatively high, which greatly limits its application.
The ligand-assisted reprecipitation method needs to make the quantum dots into a quantum dot colloidal dispersion first, and then deposit the thin film. The preparation process is also relatively complicated.
[0004] In addition, the concentration of the quantum dot colloidal dispersion synthesized by the traditional method is low, so when preparing a quantum dot film with a thickness of several hundred nanometers, it is usually necessary to use a large amount of non-polar solvent to wash the ligands in the film, and then repeat the process. multi-step deposition
This complex process has also become another obstacle in the industrial production of perovskite quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing CsPbX3 perovskite quantum dot film through one-step crystallization
  • Method for preparing CsPbX3 perovskite quantum dot film through one-step crystallization
  • Method for preparing CsPbX3 perovskite quantum dot film through one-step crystallization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] (1) 0.6 mol of cesium iodide and lead iodide were completely dissolved in 1 mL of DMF, and then 0.65 mol of adamantanemethylamine and 0.65 mol of hydroiodic acid were added as ligands, and the solution was stirred evenly as a precursor solution.

[0049] (2) Add the precursor solution dropwise on the substrate, spin-coat at 1000rpm for 10s with a homogenizer, then spin-coat at 2000rpm for 20s (the accelerations are 500 and 1000rpm·s respectively -1 ), the precursor solution after spin coating was divided into 7 groups, the heating temperature of each group was 60°C, 80°C, 100°C, 120°C, 140°C, 160°C and 180°C, the heating time was 3min, and the cooling CsPbI 3 Perovskite quantum dot films.

[0050] For CsPbI heated at 100°C 3 The surface of the perovskite quantum dot film was analyzed by scanning electron microscopy, and the results were as follows figure 1 shown. Depend on figure 1 As can be seen, the gained CsPbI of the present invention 3 The perovskite quantum ...

Embodiment 2

[0058] (1) Dissolve 0.5 mol of cesium bromide and lead bromide completely in 1 mL of DMSO respectively, then add 0.65 mol of adamantanemethylamine and 0.65 mol of hydrobromic acid as ligands, and stir the solution evenly as a precursor solution.

[0059] (2) Add the precursor solution dropwise on the substrate, spin-coat at 1000rpm for 10s with a homogenizer, then spin-coat at 2000rpm for 20s (the accelerations are 500 and 1000rpm·s respectively -1 ), the precursor solution after spin coating was divided into 6 groups, the heating temperature of each group was 60°C, 80°C, 100°C, 120°C, 140°C, 160°C, and the heating time was 3min, and CsPbBr was obtained after cooling 3 Perovskite quantum dot films.

[0060] CsPbBr prepared at different heating temperatures 3 Fluorescence photos of perovskite quantum dot films under ultraviolet light irradiation as shown in Figure 8 shown by Figure 8 As can be seen, the gained CsPbBr of the present invention 3 The surface of the perovskit...

Embodiment 3

[0065] (1) 0.2 mol of cesium chloride and lead chloride were completely dissolved in 1 mL of DMF, and then 0.65M adamantanemethylamine and 0.65M hydrochloric acid were added as ligands, and the solution was stirred evenly as a precursor solution.

[0066] (2) Add the precursor solution dropwise on the substrate, spin-coat at 1000rpm for 10s with a homogenizer, then spin-coat at 2000rpm for 20s (the accelerations are 500 and 1000rpm·s respectively -1 ), the heating crystallization temperature is 140°C, the heating time is 3min, and CsPbCl is obtained after cooling 3 Perovskite quantum dot films.

[0067] The resulting CsPbCl 3 The perovskite quantum dot film is scraped into powder and formulated into a chlorobenzene dispersion with a mass concentration of 5 mg / mL. The photo of the resulting dispersion emitting fluorescence under ultraviolet light is as follows: Figure 12 shown by Figure 12 As can be seen, the gained CsPbCl of the present invention 3 The chlorobenzene disper...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a perovskite quantum dot film through one-step crystallization, and belongs to the technical field of perovskite quantum dot materials. Adamantane methylamine and haloid acid are used as ligands, cesium halide, lead halide, the ligands and a solvent are mixed to obtain a precursor solution, the precursor solution is then deposited on a substrate, and the CsPbX3 perovskite quantum dot film is obtained after heating. The adamantane methylamine and the haloid acid are used as ligands, can rapidly cover perovskite, and are coordinated with CsPbX3 perovskite, and perovskite quantum dots are directly formed through a strong three-dimensional effect; meanwhile, the method is easy to operate and low in cost, the high-quality perovskite quantum dot filmwith the thickness larger than 500 nm can be directly obtained through one-step crystallization, and the obtained perovskite quantum dot film is high in repeatability, high in stability, good in fluorescence performance and uniform in grain distribution.

Description

technical field [0001] The invention relates to the technical field of perovskite quantum dot materials, in particular to a one-step crystallization preparation of CsPbX 3 A method for perovskite quantum dot thin films. Background technique [0002] In recent years, quantum dots have been widely used in solar cells, lasers, light-emitting diodes, and biological imaging due to their ultra-high photoluminescence efficiency, adjustable band gap, and narrow emission wavelength. Perovskite quantum dots have recently received great attention because of their good charge transfer ability, photoelectric conversion characteristics, and defect tolerance, which have shown great potential in the fields of optics and electronics. CaB 3 (X=Cl, Br, I) Perovskite quantum dots have many unique properties, such as adjusting the energy level position by controlling the halide composition, and controlling the quantum confinement effect by controlling the size of perovskite quantum dots; By a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G21/00C09K11/66B82Y30/00B82Y40/00
CPCC01G21/006C09K11/665B82Y30/00B82Y40/00C01P2004/03C01P2004/04C01P2002/82C01P2002/84C01P2002/34C01P2004/64B82Y20/00B05D1/005C01G21/16C23C18/02C23C18/1204
Inventor 丁勇刘成戴松元杨熠刘雪朋蔡墨朗
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap