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Te-doped A2SnCl6 perovskite material and preparation method thereof

A technology of perovskite material and charging ratio, which is applied in luminescent materials, chemical instruments and methods, inorganic chemistry, etc., can solve problems such as failure to meet the requirements of device application, yellow-green light-emitting materials have not yet been reported, etc., and achieves low production cost, Beneficial for mass production, high quantum yield

Inactive Publication Date: 2020-02-18
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On this basis, Deng Zhengtao's research group improved the method to prepare Cs with different morphologies. 2 SnI 6 materials, but the highest quantum yield is less than 0.5%, which is far from meeting the requirements of device applications
But with SnCl 4 as Sn source, with Cs 2 SnCl 6 The yellow-green light-emitting material as the matrix has not been reported yet

Method used

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  • Te-doped A2SnCl6 perovskite material and preparation method thereof
  • Te-doped A2SnCl6 perovskite material and preparation method thereof
  • Te-doped A2SnCl6 perovskite material and preparation method thereof

Examples

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Embodiment 1

[0040] (1) Configuration of Cs precursor: Dissolve 10mmol CsCl in 10mL concentrated HCl solvent, ultrasonic

[0041] Dissolved to obtain a 1mol / L colorless, clear and transparent Cs precursor solution;

[0042] (2) Configuration of Sn precursor: 5mmol SnCl 4 Dissolved in 9.415 mL of concentrated HCl solvent,

[0043] Ultrasonic dissolution to obtain a 0.5mol / L colorless, clear and transparent Sn precursor solution;

[0044] (3) Configuration of Te precursor: 0.1mmol Na 2 TeO 3 Dissolve in 10mL concentrated HCl solvent,

[0045] Ultrasonic dissolution, to obtain a yellow clear solution;

[0046] (4) Dissolution: Measure 1mL of the Sn precursor solution prepared in step (2) and add 20mL of high-temperature reaction

[0047] Then add 2.5mL Te precursor solution prepared in step (3), and then add 0.5mL concentrated HCl; finally add 1mL Cs precursor prepared in step (1), immediately A suspension is formed;

[0048] (5) Heating: Seal the reactor tightly and put it in an oven...

Embodiment 2

[0055] The difference from Example 1 is that the reaction temperature is 25°C, 100°C, 140°C, 180°C, 220°C, and the others are the same as in Example 1.

[0056] The Te-doped Cs that embodiment 2 prepares 2 SnCl 6 The emission (PL) spectrum of the perovskite material is shown in image 3 As shown, the results show that even at the reaction temperature of room temperature (25°C), the fluorescence quantum yield is as high as 53.3%. The best value is 81.5%.

Embodiment 3

[0058] The configuration of Rb precursor: Dissolve 10mmol RbCl in 10mL concentrated HCl solvent, and ultrasonically dissolve to obtain a 1mol / L colorless, clear and transparent Rb precursor solution;

[0059] The only difference from Example 1 is that in this example, 1 mL of Rb precursor solution is added to the mixed solution instead of the Cs precursor, and the others are the same as in Example 1.

[0060] The Te-doped Rb that embodiment 3 prepares 2 SnCl 6 The emission (PL) spectrum of the perovskite material is shown in Figure 4 As shown in a, the results show that Te doped Rb 2 SnCl 6 The emission peak of perovskite is at 548nm, Figure 4 b is the corresponding XRD pattern, indicating that the as-prepared Te-doped Rb 2 SnCl 6 Perovskite materials have a cubic phase.

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Abstract

The invention discloses a Te-doped A2SnCl6 perovskite material and a preparation method thereof. In the Te-doped A2SnCl6 perovskite material, A = Cs, Rb and K, a cesium-containing compound, a rubidium-containing compound, a potassium-containing compound, a tin-containing compound and a tellurium-containing compound are used as reaction reagents, and concentrated HCl is used as a solvent; the Te-doped A2SnCl6 perovskite material is prepared, and the influence of the temperature on the luminous efficiency of the A2SnCl6 perovskite material is explored. The Te-doped A2SnCl6 perovskite material prepared by adopting a solvothermal method is good in crystallization, high in quality, capable of being rapidly synthesized in quantity and simple and controllable in process, doping of different concentrations can be effectively realized by adjusting the feeding ratio of Te / Sn, and the Te-doped A2SnCl6 perovskite material has good repeatability..

Description

technical field [0001] The invention belongs to the technical field of perovskite materials, in particular to a Te-doped A 2 SnCl 6 (A=Cs, Rb, K) perovskite materials and preparation methods thereof. Background technique [0002] Perovskite material is a new type of inorganic functional material. With its excellent optical and electrical properties, it has broad application prospects in the fields of solar cells and light-emitting diodes. In terms of light-emitting applications, the external quantum efficiency of lead halide perovskite has exceeded 20%. However, lead halide perovskite contains highly toxic Pb element, which is more harmful to human body, so lead-containing perovskite is difficult to popularize and utilize. [0003] Researchers tried to replace Pb with other elements to prepare lead-free perovskite quantum dots. Sn is of the same family as Pb and has higher electron mobility. Marcus L. Bohm's research group (J.Am.Chem.Soc., 2016 , 138, 2941−2944.DOI: 10.1...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/04C01G19/00C09K11/61C09K11/66
CPCC01G19/006C01G19/04C01P2002/72C01P2002/87C09K11/616C09K11/665
Inventor 曾若生白坤蔡春晓科宝
Owner GUILIN UNIV OF ELECTRONIC TECH
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