33 results about "Pb element" patented technology

The invention discloses a method and device for depositing disperse tin and zinc crystal nucleuses on the surface of highly pure aluminum foil for medium and high voltage anodes in a mist spraying mode. The method includes the following steps that recrystallization annealing treatment is carried out on the rolled aluminum foil, the highly pure aluminum foil for medium and high voltage anodes is formed, the {100} surface texture occupancy of the highly pure aluminum foil is larger than 95 percent, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ga, Ge, In, Sn and Pb elements of which the electrode levels are higher than that of Al are not rich on the surface of the highly pure aluminum foil, and the purity of Al is more than 99.99 percent; an oxidation film on the surface is removed through an alkali wash pre-treatment method; aluminum foil with the surface covered with a pre-treatment alkali wash film is arranged in a mist box formed by ultrasonic spraying mist to deposit disperse tin and zinc crystal nucleuses. When the highly pure aluminum foil for medium and high voltage anodes with the surface deposited with the tin and zinc crystal nucleuses is adopted, the tin and zinc crystal nucleuses can effectively guide corrosion poring of the aluminum foil in the electrolytic corrosion process, distribution uniformity of channel holes is improved, self-corrosion thinning of the aluminum foil is reduced, and therefore the specific capacitance and bending resistance of the aluminum foil can be obviously improved.

The invention discloses a brass strip for a button and a manufacturing method thereof. According to the manufacturing method, the content of Fe and Pb elements in a raw material is strictly controlled, the technology and equipment for annealing treatment are selected according to the thickness of the brass strip, forced fast cooling is conducted on the upper surface and the lower surface of an ingot blank generated after hot rolling is conducted; furthermore, after the upper surface and the lower surface of the ingot blank are quickly cooled, and secondary hot rolling processing is conducted on the ingot blank, so that the produced brass strip has higher environmental protection performance, and no adverse reaction is caused to a human body; little ferromagnetic substance is contained, the button is basically free of magnetism and cannot be detected by a needle detector; meanwhile the content of other elements and the matching among them are adjusted, under the situation that the contents of Pb and the Fe in the brass strip are decreased, the brass strip obtains better structural property and mechanical property, the problems existing in the brass strip for the button are solved, and the brass strip with the structural property and mechanical property more suitable for manufacturing the button is further provided.

The invention discloses a rare earth iron-doped transparent oxygen fluorine germanate microcrystalline glass and a preparation method thereof. The transparent microcrystalline glass comprises the following components by mole percentage: 38-60 percent of GeO2, 4-26 percent of Al2O3, 0-8 percent of Ga2O3, 15-40 percent of CaF2, 0-12 percent of MF, 0-6 percent of ErF3, 0-8 percent of YbF3 and 0-4 percent of PrF3, wherein M is one or more of Li+, Na+ and K+. The preparation method comprises the steps of pouring by melting method to obtain matrix glass and carrying out special thermal treatment on the matrix glass to obtain the microcrystalline glass containing CaF2 crystalline phase in nanometer level. The transparent oxygen fluorine germinate microcrystalline glass is environment-friendly, has stable physicochemical property and does not contain toxic Pb element, and has high transparency from visible area to near-infrared and intermediate infrared areas and excellent active optics property. The invention can be used in the field of optical communication, display, storage, and the like.

The invention provides a method for secondary modification of the surface of an active carbon material for a super battery. The method for the secondary modification of the carbon material comprises two steps, including carbon material nanometer Pb modification and carbon material surface Pb coating. According to the method disclosed by the invention, by utilizing microcosmic and macroscopic dual-scale depth, uniformity and great modification of a Pb element in the carbon material, the aims of inhibiting hydrogen evolution of the carbon material in an acidic system, increasing the capacity and regulating an electrochemical window are realized; the problem that only one aspect of defect of the carbon material can be overcome in the prior art is solved, so that an active carbon negative electrode and a Pb electrode of the super battery have the same working potential; the buffer current capability of the C negative electrode is improved, and the problem that the Pb electrode and the C electrode of the super battery are not matched in working potential is solved; compared with the hydrogen evolution current of an unmodified carbon material in the prior art, the hydrogen evolution current of the carbon material modified by the method disclosed by the invention is at least reduced by 52% and is even smaller than the hydrogen evolution current of a pure-lead electrode, so the carbon material can be really applied to the super battery and is suitable for industrial application.

The present invention relates to a solar cell of a high-efficiency planar heterojunction perovskite structure having an interface modification layer formed by a [6,6]-phenyl group-C61-butyric acid (PCBA). The solar cell is characterized in that iodide perovskite ABI3 is prepared on the FTO/compact TiO2 surface of imporous TiO2, wherein A is the Pb element, and B is organic ammonium iodate CH3NH3I; a perovskite material is made from CH3NH3PbI3, NH2=CHNH3PbI3, CH3NH3SnI3, NH2=CHNH3SnI3 and the like and is good in light absorption capacity, photovoltaic conversion capacity and electron hole transporting capacity. An electron transfer layer which comprises TiO2, ZnO and the like and a hole transporting layer which comprises Spiro-OMe TAD and the like are introduced into the interface of a perovskite active layer and an electrode, so that a perovskite structure-based solar cell device can be constructed. The solar cell is simple in material compounding and low in cost. The device formed is high in stability and long in service life.

The invention relates to a rare-earth red light-emitting material for converting purple light LED into white light and a preparation process thereof, which belong to the technical field of light emission and display and relate to a red light-emitting material and the preparation process thereof. The structural formula of the red light-emitting material includes M4-3a-3b-2c (MoO4) 2: RaRbNc, wherein the M is an alkali metal Li element, the Ra is a rare-earth activator Eu element, the Rb is a rare-earth sensitizer Tb element, and the Nc is a metal sensitizer Pb element. Materials of the structural formula M4-3a-3b-2c (MoO4) 2: RaRbNc are weighed according to percentage by weight; the weighed materials after being grinded and mixed evenly are placed into an aluminum trioxide crucible and sintered for 1-2 hours in a 400-600 DEG C high-temperature furnace; after being cooled, the materials are fetched out, pulverized, placed into the crucible again and sintered for 2-3 hours in 700-1000 DEG C air atmosphere in the high-temperature furnace; after being cooled, the materials are fetched out and pulverized again, and crystalline powders are obtained and can emit bright red light by stimulation of 365 nanometers and a purple light LED. After the crystalline powders are mixed with rare-earth light-emitting materials emitting green and blue light according to a certain proportion, white light can be emitted by coating the crystalline powders onto a purple light LED tube core.

The invention provides multiferroic sosoloid ceramic and a preparation method thereof. The chemical constitution of the multiferroic sosoloid ceramic is shown as (1-x-y)BiFeO3-xLaFeO3-yPbFeO2.5, wherein x is the mole percent of LaFeO3; y is the mole percent of PbFeO2.5; x is greater than or equal to 0 but is smaller than or equal to 0.10; y is greater than or equal to 0 but is smaller than or equal to 0.35. The ternary solid solution systems are used and are respectively BiFeO3, LaFeO3 and PbFeO2.5 which respectively have different effects; the BFO has an intrinsic magnetoelectric coupling effect; the LFO can reduce the BFO loss; through the stable BFO structure, PbFeO2.5 can easily realize solid solution and can further reduce the loss; meanwhile, the magnetic and magnetoelectric couplingeffect is improved. BiFeO3 powder, LaFeO3 power and PbFeO2.5 power are respectively prepared, and are then pelleted and sintered together. The preparation method has the advantages that the final sosoloid sintering formation temperature can be effectively reduced; further, the volatilization of Bi and Pb elements at high temperature is reduced.

The invention discloses a method and a device for separating lead-antimony alloys by supergravity and belongs to the field of nonferrous metallurgy. A large amount of lead-antimony alloys can be produced in the antimony metallurgy or lead metallurgy process, the alloys are continuously input into a rotary supergravity separation reaction cavity through a feeding system, then a rotary supergravityreactor is started, and a stable and adjustable supergravity field is generated by driving a reactor on a rolling shaft by an adjustable-speed motor to rotate. Under the combined action of the supergravity field and a temperature field, the atomic diffusion and mass transfer process of the lead-antimony alloys is greatly accelerated, and continuous separation between a lead-rich liquid and an antimony-rich melt is realized. By adopting the method and the device, rapid separation of the lead-rich liquid and the antimony-rich melt in the lead-antimony alloys can be realized under the supergravity condition, the metal recovery rate is remarkably increased, a lead-rich liquid with the Pb content being larger than 85 percent and an antimony-rich phase with the Sb content being 87-91 percent areobtained, and the total recovery rate of Pb element reaches 90 percent or above. The method and the device have the advantages of simpleness in operation, no production of smoke and smelting slag, continuous production and low cost, are also suitable for separating the alloys in other nonferrous smelting processes and improve the production benefit.

The invention discloses a wide-temperature range negative temperature coefficient heat-sensitive ceramic material and a preparation method thereof. Raw materials of the negative temperature coefficient heat-sensitive ceramic material comprise BaTiO3, TiO2, M1O, M2O, M3O, M4O and M5O, wherein M1 is at least one of Sm, Nd, Y, La and Nb elements; M2 is at least two of Si, Al and Ti elements; M3 is acombination of the Ca element and at least one of Sr and Pb elements; M4 is at least one of Sb and Bi elements; and M5 is at least one of Na, K and Li elements. The barium titanate-based wide-temperature range NTC heat-sensitive ceramic material with the measuring temperature range being 300 DEG C or more is obtained through improving and further optimizing the key composition components of the ceramic material and the whole process flow and condition parameters in all reaction steps of the corresponding preparation method and doping and modifying a barium titanate-based semiconductor heat-sensitive ceramic.

The invention relates to the field of manufacturing medium and high voltage anode aluminum foils for aluminum electrolytic capacitors. The method is characterized in that the medium and high voltage anode aluminum foils with purity of 99.99% are pre-treated, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ga, Ge, In, Sn and Pb elements with higher electrode potential than aluminum are not enriched on the surface of the medium and high voltage anode aluminum foils, an oxide film on the surface is removed, pulsed deposition is then employed, and the approximately orderly-distributed nano tin dots are deposited on the surface of the aluminum foils. The method is advantaged in that the medium-high voltage anode aluminum foils of which the surface is deposited with the nano tin dots is utilized, uniformity of generated tunnel holes can be significantly improved when the holes are electrolytically etched, tunnel hole merging is reduced, and thereby the specific capacitance of the aluminum foils can be increased.

The invention discloses a layered hybrid thin film with an adjustable band gap and a preparation method of the layered hybrid thin film. The material of the layered hybrid thin film is a layered hybrid. The layered hybrid thin film is prepared by the following steps: mixing iodobenzeneethanamine, stannous iodide and lead iodide at the stoichiometric ratio that x is smaller than or equal to 0.9 and greater than or equal to 0.1, dissolving the mixture with an organic solvent, and shaking and stirring the solution for 5-60 minutes to obtain a precursor solution; and carrying out spin coating on the precursor solution on a substrate in an inert atmosphere environment and carrying out thermal treatment to obtain the hybrid thin film. The crystal structure of the hybrid thin film is in a layered form; the hybrid thin film has good stability in air when x is smaller than 0.7; and the band gap of the hybrid thin film can be adjusted within a range of 1.91eV to 2.33eV along with the difference of the x. According to the hybrid thin film, a Pb element is replaced with an Sn(II) part, and use of Pb is reduced, so that environmental protection is facilitated; and the layered hybrid thin film also has a potential application prospect in the aspect of a photovoltaic device.

The invention discloses a remelted low-lead low-bismuth copper alloy with no hot crack and relates to the field of metal alloy material manufacturing technology. The remelted low-lead low-bismuth copper alloy with no hot crack comprises the following components of: by weight, 58-61% of Cu, 0.3-0.8% of Al, 0.009-0.35% of Zr, 0.008-0.035% of B, 0.05-0.20% of Pb, 0.1-0.40% of Bi, Mn being less than 0.15%, Si being less than 0.15%, Sn being less than 0.35%, Fe being less than 0.35%, and the balance being zinc and unavoidable impurities, wherein the total amount of the impurities is less than 0.25%. According to the copper alloy, the contents of the lead element and the bismuth element are minimized, thus reducing the harm to the environment and human body and decreasing the cost; The purity of gravity ingot casting melting is excellent, fluidity of the casting process is excellent, and thermal stress crack resistance is strong; the density of the microstructure is high, and crystal grains are fine and uniform; the cutting ability is raised, the polishing degree is excellent, there is no welding stress crack, the corrosion resistance is raised, and old copper materials can be recycled and reused while the cutting ability of the copper alloy is guaranteed.

The invention belongs to the technical field of semiconductor materials, and provides an n-type tin telluride thermoelectric material and a preparation method thereof. The preparation method comprises the steps: mixing Sn, Te, Pb and SnI2 according to the molar ratio of (1-x-y), (1-2y), x and y, and obtaining a mixed material; putting the mixed material into a quartz tube, and carrying out vacuumizing treatment; placing the quartz tube filled with the mixed material in a heat treatment furnace for synthesis reaction to obtain an n-type SnTe cast ingot; and grinding the n-type SnTe cast ingot into powder, filling the powder into a graphite mold, and sintering the graphite mold filled with the n-type SnTe cast ingot powder in a sintering furnace to obtain an n-type SnTe sample. According to the invention, the Pb element is introduced and is completely dissolved in the SnTe matrix, so that the intrinsic Sn vacancy is made up, the hole concentration of SnTe is reduced, a precondition is provided for realizing the purpose of conversion from p type to n type of SnTe, and meanwhile, the Te element is replaced by I and electron doping is carried out, so that the n-type SnTe thermoelectric material is successfully synthesized.

The invention discloses a niobium-boron binary alloy brazing material, and the brazing material comprises the following raw materials by weight percent: 1.5%-5.5% of boron and the balance of niobium and inevitable impurities, wherein the content by weight percent of each of Zn, Cd and Pb elements in the impurities is not greater than 0.001%. The niobium-boron binary alloy brazing material is low in cost and low in steam pressure and can be used in a high-reliability cathode environment of a vacuum electronic device, the melting temperature of the brazing material is 1600 DEG C-1800 DEG C, thebrazing temperature is 1650 DEG C-1900 DEG C, and the niobium-boron binary alloy brazing material is suitable for brazing refractory metals, namely W and Mo and alloys thereof, under an Ar atmosphereor vacuum state; after the brazing material is in brazing connection with the refractory metals, namely the W and the Mo, the wettability and the spreadability are good, the brazing material is good in flowability, strong in gap filling capability and good in high-temperature strength of welding lines; and the steam pressure of the brazing material is lower than 1*10<-5>Pa under the vacuum working condition of a cathode weld assembly at the temperature of 1000 DEG C-1200 DEG C.

The present invention belongs to the field of advanced manufacturing technology and provides a PZT/Si diffusion bonding method. First, an electrode layer is prepared on the surface of a PZT bulk material, and a PZT film is deposited on the surface of the electrode layer to form a PZT device. Then, under certain temperature conditions, through the exertion of pressure on the PZT device and the silicon substrate, the lead and the silicon elements in the PZT film are subjected to a diffusion reaction to form a diffusion bonding layer with a certain depth and a high bonding force. In this way, the stable and solid combination of the PZT device with the silicon is realized. Finally, a PZT piezoelectric layer with required thickness is obtained by the subsequent mechanical grinding and polishing process. The PZT/Si bonding mode achieves a high bonding strength, is simple to process, and convenient to implement. Low in cost, the method is favorable for commercial popularization and application.