N-type tin telluride thermoelectric material and preparation method thereof

A technology of thermoelectric materials and tin telluride, applied in thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problem of difficult elimination of Sn vacancies, n-type tin telluride synthesis technology and performance reports and research, Tin telluride n-type is difficult to achieve and other problems, to achieve the effect of optimal thermoelectric performance

Active Publication Date: 2021-07-02
BEIHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to achieve high conversion efficiency of thermoelectric devices, it is necessary to provide n-type and p-type materials with matching properties. It can be seen that the preparation and synthesis technology of n-type tin telluride thermoelectric materials is very important for the commercial application of tin telluride thermoelectric devices. Researchers have also tried

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  • N-type tin telluride thermoelectric material and preparation method thereof
  • N-type tin telluride thermoelectric material and preparation method thereof
  • N-type tin telluride thermoelectric material and preparation method thereof

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preparation example Construction

[0044] Such as Figure 18 As shown, the invention discloses a preparation method of an n-type tin telluride thermoelectric material, comprising the following steps:

[0045] Step 1, combine Sn, Te, Pb and SnI 2 The molar ratio is: (1-x-y), (1-2y), x and y are mixed to obtain a mixed material, wherein, 0.26

[0046] Step 2, putting the mixed material into a quartz tube and vacuumizing it.

[0047] Step 3, placing the quartz tube containing the mixed material in a heat treatment furnace for heat treatment and synthesis reaction to obtain an n-type SnTe ingot, wherein the heat treatment furnace can be a muffle furnace or other heat treatment furnace that can be heated and heated.

[0048] Step 4, grinding the n-type SnTe ingot into powder, and putting it into a graphite mold for sintering to obtain an n-type SnTe sample.

[0049] Also disclosed is an n-type tin telluride thermoelectric material comprising Pb and SnI 2 ; Sn, Te, Pb and SnI 2 The molar ratio of...

Embodiment 1

[0055] According to the molar ratio of Sn, Pb, Te and I is the proportioning of 0.6:0.4:0.99:0.01, the Sn, Te, Pb and SnI with purity greater than 99.99% 2 The blocks are mixed to obtain a mixed material.

[0056] Put the mixed material into a quartz tube (10 mm in diameter), fill it with argon, and circulate it for 3 times, then vacuumize and seal the inner quartz tube until the vacuum degree of the inner quartz tube is less than 10 -3 Pa, the quartz tube was sealed with a flame.

[0057] Place the quartz tube filled with the mixture in a muffle furnace for heat treatment, and set the temperature control program of the muffle furnace: raise the temperature to 450°C at a rate of 35°C / h; then raise the temperature to 1150°C at a rate of 10°C / h , keep warm for 720min; then cool to room temperature with the furnace. High-quality n-type SnTe ingots are obtained after heat treatment.

[0058] Grind the high-quality n-type SnTe ingot obtained after heat treatment into powder and ...

Embodiment 2

[0060] According to the molar ratio of Sn, Pb, Te and I is the proportioning of 0.6:0.4:0.985:0.015, the Sn, Te, Pb and SnI with purity greater than 99.99% 2 The blocks are mixed to obtain a mixed material.

[0061] Put the mixed material into a quartz tube (10 mm in diameter), fill it with argon, and circulate it for 3 times, then vacuumize and seal the inner quartz tube until the vacuum degree of the inner quartz tube is less than 10 -3 Pa, the quartz tube was sealed with a flame.

[0062] Place the quartz tube filled with the mixture in a muffle furnace for heat treatment, and set the temperature control program of the muffle furnace: raise the temperature to 450°C at a rate of 35°C / h; then raise the temperature to 1150°C at a rate of 10°C / h , keep warm for 720min; then cool to room temperature with the furnace. High-quality n-type SnTe ingots are obtained after heat treatment.

[0063] Grind the high-quality n-type SnTe ingot obtained after heat treatment into powder an...

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Abstract

The invention belongs to the technical field of semiconductor materials, and provides an n-type tin telluride thermoelectric material and a preparation method thereof. The preparation method comprises the steps: mixing Sn, Te, Pb and SnI2 according to the molar ratio of (1-x-y), (1-2y), x and y, and obtaining a mixed material; putting the mixed material into a quartz tube, and carrying out vacuumizing treatment; placing the quartz tube filled with the mixed material in a heat treatment furnace for synthesis reaction to obtain an n-type SnTe cast ingot; and grinding the n-type SnTe cast ingot into powder, filling the powder into a graphite mold, and sintering the graphite mold filled with the n-type SnTe cast ingot powder in a sintering furnace to obtain an n-type SnTe sample. According to the invention, the Pb element is introduced and is completely dissolved in the SnTe matrix, so that the intrinsic Sn vacancy is made up, the hole concentration of SnTe is reduced, a precondition is provided for realizing the purpose of conversion from p type to n type of SnTe, and meanwhile, the Te element is replaced by I and electron doping is carried out, so that the n-type SnTe thermoelectric material is successfully synthesized.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an n-type tin telluride thermoelectric material and a preparation method thereof. Background technique [0002] Tin telluride (SnTe) is an important semiconductor material, which has important application value in the field of thermoelectric energy materials and ferroelectric materials, especially as a thermoelectric material, it has received extensive attention at home and abroad. Thermoelectric energy conversion material is a new type of functional material, which uses temperature difference to drive the directional migration of carriers to achieve direct and reversible mutual conversion between thermal energy and electrical energy. Thermoelectric materials have the advantages of small size, no pollutant emission, high reliability, and wide application temperature range. They have broad development prospects in strategic new energy technologies such as aerospace...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 赵立东张潇庞慧梅
Owner BEIHANG UNIV
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