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Semiconductor device and manufacturing method thereof

A semiconductor, rectangular technology used in the field of p-channel enhancement mode semiconductor devices

Active Publication Date: 2022-02-08
INNOSCIENCE (SUZHOU) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the development of Changguan HHMT encountered manufacturing challenges due to process factors

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0015] Common reference numbers are used throughout the drawings and detailed description to refer to the same or similar components. Embodiments of the present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

[0016] For the orientation of a component shown in an associated figure, specify a spatial description relative to a component or group of components or a plane of a component or group of components, such as "on", "above", "Below", "Above", "Left", "Right", "Down", "Top", "Bottom", "Vertical", "Horizontal", "Sideways" , "higher", "lower", "upper", "above", "under" etc. It should be understood that the spatial descriptions used herein are for illustration purposes only, and that actual implementations of the structures described herein may be spatially arranged in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not affected by such ...

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Abstract

A semiconductor device includes first and second nitride-based semiconductor layers, a source electrode, a drain electrode, a passivation layer, a stress modulation layer, and a gate electrode. The stress modulation layer is disposed over the second nitride-based semiconductor layer and extends along at least one sidewall of the passivation layer to contact the second nitride-based semiconductor layer so as to form an interface. The gate electrode is disposed over the stress modulation layer and between the source electrode and the drain electrode. The gate electrode is located directly above the interface of the stress modulation layer and the second nitride-based semiconductor layer.

Description

technical field [0001] The present disclosure generally relates to a nitride-based semiconductor device. More specifically, the present disclosure relates to a p-channel enhancement mode semiconductor device having a stress modulating layer to form a discontinuous two-dimensional hole gas (2DHG) region. Background technique [0002] In recent years, a great deal of research on high hole mobility transistors (HHMTs) has prevailed, especially for high power switching and high frequency applications. III-Nitride-based HHMT utilizes the heterojunction interface between two materials with different bandgaps to form a quantum well-like structure adapted to the two-dimensional hole-gas (2DHG) region, thereby meeting the needs of high-power / frequency devices . In terms of actual demand, HHMT needs to be designed to be normally off. However, due to process factors, the development of Changguan HHMT encountered manufacturing challenges. Currently, there is a need to improve the yi...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/778H01L21/335
CPCH01L29/0684H01L29/778H01L29/66462H01L29/7781H01L29/42316H01L29/2003H01L29/432H01L29/42376H01L29/7786H01L29/7842
Inventor 郝荣晖陈扶黄敬源
Owner INNOSCIENCE (SUZHOU) TECH CO LTD
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